DSA120C150QB
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA120C150QB
Backside: cathode
FAV
F
VV0.8
RRM
60
150
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-3P
● Industry standard outline
compatible with TO-247
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA120C150QB
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.93
R0.4 K/
W
R
min.
60
V
RSM
V
900T = 25°C
VJ
T = °C
VJ
m
A
5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
375
W
T = 25°C
C
RK/
W
60
150
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.13
T = 25°C
VJ
125
V
F0
V
0.51T = °C
VJ
175
r
F
3.9 m
Ω
V
0.80T = °C
VJ
I = A
F
V
60
1.03
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
150
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
481
j
unction capacitance V = V24 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
1.20 k
A
150
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
150
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA120C150QB
Ratings
Product Mar
k
i
n
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
D
S
A
120
C
150
QB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-3P (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g5
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
150-55
TO-3P
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA120C150QB 501788Tube 30DSA120C150QBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.51
mΩ
V
0 max
R
0 max
slope resistance * 1.3
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA120C150QB
1 2 3
Outlines TO-3P
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA120C150QB
0 50 100 150 200
0
20
40
60
80
0.0 0.2 0.4 0.6 0.8 1.0 1.2
20
40
60
80
100
120
0 50 100 150
0.001
0.01
0.1
1
10
100
10 30 50 700204060
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
050100150
100
1000
10000
TVJ=175°C
TVJ = 25°C
IF
[A]
VF [V]
IR
[mA]
VRV]V[ R[V]
CT
[pF]
TC[°C] IF(AV) [A]
P(AV)
[W]
ZthJC
[K/W]
t[s]
Note: All curves are per diode
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
IRvs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CTvs. reverse voltage VR
Fig. 4 Average forward current
IF(AV) vs. case temp TC
Fig. 5 Forward power loss
characteristics
Fi
g
.6Transientthermalim
p
edance
j
unction to case at various dut
y
c
y
cles
IF(AV)
[A]
TVJ =
150°C
125°C
25°C
Rthi ti
0.022 0.0002
0.082 0.0032
0.104 0.026
0.165 0.208
0.027 0.79
150°C
125°C
100°C
75°C
50°C
25°C
d=0.5
DC
d =
DC
0.5
0.33
0.25
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
