A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 100 mA 5.0 ---
COB VCB = 30 V f = 1.0 MHz 8.5 15 pF
PG
ηC VCC =28 V POUT = 7.0 W f = 175 MHz 8.4
60 12.5 dB
%
NPN SILICON RF POWER TRANSISTOR
2N5641
DESCRIPTION:
The ASI 2N5641 is Designed for
28 V Large Signal Class C Amplifier
Applications up to 175 MHz.
FEATURES INCLUDE:
• Emitter Ballasting
• Gold Metalization
• 3/8" SOE Stud Package
MAXIMUM RATINGS
IC 1.0 A
VCE 35 V
VCB 65 V
PDISS 15 W @ TC = 25 OC
TJ -65 OC to + 200 OC
TSTG -65 OC to + 150 OC
PACKAGE STYLE .380" 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
