Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2 1Publication Order Number:
MBR2045CTP/D
MBR2045CTP
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
•Guardring for Stress Protection
•Low Forward Voltage
•150°C Operating Junction Temperature
•Epoxy Meets UL94, VO at 1/8″
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Shipped 50 units per plastic tube
•Marking: B2045P
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR, TC = 135°C) IF(AV) 20 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz,
TC = 135°C) Per Diode Leg
IFRM 20 A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge
Current (2.0 s, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg –65 to +175 °C
Operating Junction Temperature TJ–65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
Device Package Shipping
ORDERING INFORMATION
MBR2045CTP TO–220
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CASE 221A
TO–220AB
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
45 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
YY WW
B2045P
AKA
YY = Year
WW = Work Week
B2045P= Device Code
AKA = Diode Polarity
MBR2045CTP
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RθJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 10 Amps, TC = 125°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.57
0.72
0.84
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR15
0.1
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%
Figure 1. Maximum Forward Voltage
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
1
0.50.40.30.2
Figure 2. Typical Forward Voltage
0.1
iF, INSTANTANEOUS FORWARD CURRENT (A)
0.80.70.6 1.110.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
0.50.40.30.1
0.1
iF, INSTANTANEOUS FORWARD CURRENT (A)
0.80.70.6 0.9
100
0.2
Figure 3. Typical Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
0.01
0.001
0.0001
151050
Figure 4. Typical Capacitance
0.0000001 302520 454035 VR, REVERSE VOLTAGE (VOLTS)
200
100
2015100
0353025 50
800
5
50
IR, REVERSE CURRENT (A)
0.00001
0.000001
4540
400
300
500
700
600
C, CAPACITANCE (pF)
125°C25°C
75°C125°C
25°C
75°C
125°C
25°C
75°C
MBR2045CTP
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3
Figure 5. Current Derating, Case, Per Diode
TC, CASE TEMPERATURE (°C)
18
12
135130
Figure 6. Forward Power Dissipation, Per Diode
145140 150 IF(AV), AVERAGE FORWARD CURRENT (AMPS)
2
1
40
08618
10
2155 10
4
3
5
7
6
10
8
6
4
2
0
IF(AV), AVERAGE FORWARD CURRENT (A)
RATED
VOLTAGE
APPLIED
dc
SQUARE WAVE
12
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
dc
SQUARE WAVE
14
16
14 16
8
9
MBR2045CTP
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4
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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MBR2045CTP/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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