VRSM VRRM IFRMS (maximum values for continuous operation) 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 C) 50 A (95 C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF 600 SKN 2 F 50/06 SKN 2 F 50/06 UNF SKR 2 F 50/06 SKR 2 F 50/06 UNF 800 SKN 2 F 50/08 SKN 2 F 50/08 UNF SKR 2 F 50/08 SKR 2 F 50/08 UNF 1000 SKN 2 F 50/10 SKN 2 F 50/10 UNF SKR 2 F 50/10 SKR 2 F 50/10 UNF Symbol Conditions IFAV sin.180; (Tcase = . . .); f = 5000 Hz 50 (105 C) 50 (95 C) A sin.180/rec.120; Tamb = 45 C; K5 K3 K1,1 12/11 18/17 33/31 12/11 17/16 31/29 A A A IFSM Tvj = 25 C; 10 ms Tvj = 150 C; 10 ms 1100 940 800 670 A A i2t Tvj = 25 C; 8,3 ... 10 ms Tvj = 150 C; 8,3 ... 10 ms 6000 4400 3200 2200 A 2s A 2s Qrr IRM IR SKN 2 F 50 SKR 2 F 50 Units Tvj = 130 C; IF = 100 A; A - diF = 30 ; VR = 30 V 3 C 10 A Tvj = 25 C; VR = VRRM Tvj = 130 C; VR = VRRM 0,4 50 mA mA s trr Tvj = 25 C I =1A Tvj = 130 C F = IR max. 200 typ. 400 ns ns VF Tvj = 25 C; IF = 50 A max. 1,8 V V(TO) Tvj = 150 C 1,2 V rT Tvj = 150 C 4 m Rthjc 0,5 0,65 C/W Tvj - 40 . . . + 150 C Tstg - 55 . . . + 150 C SI units 2,5 Nm US units 22 . 5 9,81 lb.in. 20 g M a w approx. Case (c) by SEMIKRON Typical Applications * Inverse diodes for power transistors, GTO thyristors, asymmetric thyristors * SMPS, inverters, choppers * For severe ambient conditions C/W 0,25 Rthch Features * Small recovered charge * Soft recovery * Up to 1000 V reverse voltage * Hermetic metal cases with glass insulators * Threaded studs ISO M6 or 1/4-28 UNF * SKN: anode to stud SKR: cathode to stud m/s2 E10 B 9 - 17 B 9 - 18 (c) by SEMIKRON (c) by SEMIKRON B 9 - 19 B 9 - 20 (c) by SEMIKRON (c) by SEMIKRON B 9 - 21 B 9 - 22 (c) by SEMIKRON