© by SEMIKRON B 9 – 17
Fast Recovery Rectifier
Diodes
SKN 2 F 50
SKR 2 F 50
Features
•Small recovered charge
•Soft recovery
•Up to 1000 V reverse voltage
•Hermetic metal cases with
glass insulators
•Threaded studs ISO M6
or 1/4-28 UNF
•SKN: anode to stud
SKR: cathode to stud
Typical Applications
•Inverse diodes for pow er
transistors, GTO thyristors,
asymmetric thyristors
•SMPS, inverters, choppers
•For severe ambient conditions
V
RSM
I
FRMS
(maximum va lue s for continuo us operation)
V
RRM
100 A
I
FAV
(sin. 180; T
case
= . . . )
50 A (105 °C) 50 A (95 °C)
t
rr
= 200 ns
V
400 SKN 2 F 50/04 SKR 2 F 50/04
SKN 2 F 50/04 UNF SKR 2 F 50/04 UNF
600 SKN 2 F 50/06 SKR 2 F 50/06
SKN 2 F 50/06 UNF SKR 2 F 50/06 UNF
800 SKN 2 F 50/08 SKR 2 F 50/08
SKN 2 F 50/08 UNF SKR 2 F 50/08 UNF
1000 SKN 2 F 50/10 SKR 2 F 50/10
SKN 2 F 50/10 UNF SKR 2 F 50/10 UNF
Symbol Conditions SKN 2 F 50 SKR 2 F 50 Units
I
FAV
sin.180; (T
case
= . . .); f = 5000 Hz 50 (105 °C) 50 (95 °C) A
sin.180/rec.120; T
amb
= 45 °C; K5 12/11 12/11 A
K3 18/17 17/16 A
K1,1 33/31 31/29 A
I
FSM
T
vj
= 25 °C; 10 ms 1100 800 A
T
vj
= 150 °C; 10 ms 940 670 A
i
2
tT
vj
= 25 °C; 8,3 ... 10 ms 6000 3200 A
2
s
T
vj
= 150 °C; 8,3 ... 10 ms 4400 2200 A
2
s
Q
rr
T
vj
= 130 °C; I
F
= 100 A; 3 µC
I
RM
–
d
iF
=
30
A
µ
s
;
V
R
= 30
V
10 A
I
R
T
vj
= 25 °C; V
R
= V
RRM
0,4 mA
T
vj
= 130 °C; V
R
= V
RRM
50 mA
t
rr
T
vj
= 25 °Cmax. 200ns
I
F = IR
= 1 A
T
vj
= 130 °C typ. 400 ns
V
F
T
vj
= 25 °C; I
F
= 50 A max. 1,8 V
V
(TO)
T
vj
= 150 °C1,2V
r
T
T
vj
= 150 °C4mΩ
R
thjc
0,5 0,65 °C/W
R
thch
0,25 °C/W
T
vj
– 40 . . . + 150 °C
T
stg
– 55 . . . + 150 °C
M SI units 2,5 Nm
US units 22 lb.in.
a5
. 9,81 m/s
2
w approx. 20 g
Case E10
© by SEMIKRONB 9 – 18
© by SEMIKRON B 9 – 19
© by SEMIKRONB 9 – 20
© by SEMIKRON B 9 – 21
© by SEMIKRONB 9 – 22
