DATA SH EET
Product specification
Supersedes data of 1997 Jun 09 1999 May 18
DISCRETE SEMICONDUCTORS
BC807W
PNP general purpose transistor
b
ook, halfpage
M3D187
1999 May 18 2
Philips Semiconductors Product specification
PNP general purpose transistor BC807W
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
•General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
MARKING
Note
1. ∗= - : Made in Hong Kong.
∗= t : Made in Malaysia.
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC807W 5D∗BC807-25W 5B∗
BC807-16W 5A∗BC807-40W 5C∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−50 V
VCEO collector-emitter voltage open base; IC=−10 mA −−45 V
VEBO emitter-base voltage open collector −−5V
I
Ccollector current (DC) −−500 mA
ICM peak collector current −−1A
I
BM peak base current −−200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 May 18 3
Philips Semiconductors Product specification
PNP general purpose transistor BC807W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =−20 V −−100 nA
IE= 0; VCB =−20 V; Tj= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =−5V −−100 nA
hFE DC current gain IC=−100 mA; VCE =−1 V; note 1;
see Figs 2, 3 and 4
BC807W 100 600
BC807-16W 100 250
BC807-25W 160 400
BC807-40W 250 600
DC current gain IC=−500 mA; VCE =−1 V; note 1 40 −
VCEsat collector-emitter saturation
voltage IC=−500 mA; IB=−50 mA; note 1 −−700 mV
VBE base-emitter voltage IC=−500 mA; VCE =−1 V; note 1 −−1.2 V
Cccollector capacitance IE=i
e= 0; VCB =−10 V; f = 1 MHz −10 pF
fTtransition frequency IC=−10 mA; VCE =−5 V; f = 100 MHz 80 −MHz
1999 May 18 4
Philips Semiconductors Product specification
PNP general purpose transistor BC807W
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
250
50
100
150
200
MBH717
−10−1−1
hFE
−10 IC (mA)
−102−103
VCE = −1 V
BC807-16W.
1999 May 18 5
Philips Semiconductors Product specification
PNP general purpose transistor BC807W
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
500
100
200
300
400
MBH718
−10−1−1
hFE
−10 IC (mA)
−102−103
VCE = −1 V
BC807-25W.
Fig.4 DC current gain; typical values.
handbook, full pagewidth
0
500
100
200
300
400
MBH719
−10−1−1
hFE
−10 IC (mA)
−102−103
VCE = −1 V
BC807-40W.
1999 May 18 6
Philips Semiconductors Product specification
PNP general purpose transistor BC807W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
1999 May 18 7
Philips Semiconductors Product specification
PNP general purpose transistor BC807W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 May 18 Document order number: 9397 750 05954
