BYG20D thru BYG20J
Vishay General Semiconductor
Document Number: 88958
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristics
• Ultrafast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 200 V to 600 V
IFSM 30 A
IR1.0 µA
VF1.4 V
trr 75 ns
ER20 mJ
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT
Device marking code BYG20D BYG20G BYG20J
Maximum repetitive peak reverse voltage VRRM 200 400 600 V
Average forward current IF(AV) 1.5 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load IFSM 30 A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
ER20 mJ
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
BYG20D thru BYG20J
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88958
Revision: 27-Aug-07
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG20D BYG20G BYG20J UNIT
Maximum instantaneous
forward voltage (1) at IF = 1 A
IF = 1.5 A TJ = 25 °C VF
1.3
1.4 V
Maximum DC reverse current at VR = VRRM
TJ = 25 °C
TJ = 100 °C IR
1
10 µA
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 75 ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT
Typical thermal resistance - junction lead TL = const. RθJL 25 °C/W
Typical thermal resistance - junction ambient RθJA
150 (1)
125 (2)
100 (3) °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG20D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG20D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG20DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel
BYG20DHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel
Figure 1. Forward Current vs. Forward Voltage
0.001
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage (V)
Forward Current (A)
T
J
= 25 °C
T
J
= 150 °C
Figure 2. Max. Average Forward Current vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100806040200 120 140 160
Ambient Temperature (°C)
Average Forward Current (A)
V
R
= V
RRM
Half Sine-Wave
R
θJA
≤ 25 K/W
R
θJA
≤ 125 K/W
R
θJA
≤ 150 K/W
BYG20D thru BYG20J
Vishay General Semiconductor
Document Number: 88958
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Reverse Current vs. Junction Temperature
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
0
10
20
30
40
70
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 80 % V
R
50
60
0
5
10
15
20
25
30
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
Figure 6. Reverse Recovery Time vs. Forward Current
Figure 7. Reverse Recovery Charge vs. Forward Current
Figure 8. Thermal Response
0 0.2 0.4 0.6 0.8
0
100
200
300
400
600
1.0
500
IR = 0.5 A, iR = 0.125 A
Reverse Recovery Time (ns)
Forward Current (A)
TA = 125 °C
TA = 100 °C
TA = 75 °C
TA = 25 °C
TA = 50 °C
0
50
100
150
200
0 0.2 0.4 0.6 0.81.0
Reverse Recovery Charge (nC)
Forward Current (A)
I
R
= 0.5 A, i
R
= 0.125 A
T
A
= 125 °C
T
A
= 100 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 50 °C
1
10
100
1000
Thermal Resistance for Pulse Cond. (K/W)
Pulse Length (s)
10-5 10-4 10-3 10-2 10-1 100101102
Single Pulse
125 K/W DC
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.02
t
p
/T = 0.05
t
p
/T = 0.01
BYG20D thru BYG20J
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88958
Revision: 27-Aug-07
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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