MAC223A6 - ON Semiconductor

 Semiconductor Components Industries, LLC, 1999

February, 2000 – Rev. 1 1Publication Order Number:

MAC223A/D

MAC223A6, MAC223A8,

MAC223A10

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications such as

lighting systems, hea ter c ontrols, motor controls and power supplies; or

wherever full–wave silicon–gate–controlled devices are needed.

•Off–State Voltages to 800 Volts

•All Diffused and Glass Passivated Junctions for Parameter Uniformity

and Stability

•Small, Rugged, Thermowatt Construction for Thermal Resistance

and High Heat Dissipation

•Gate Triggering Guaranteed in Four Modes

•Device Marking: Logo, Device Type, e.g., MAC223A6, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off–State Voltage(1)

(TJ = –40 to 125°C, Sine Wave 50 to

60 Hz, Gate Open) MAC223A6

MAC223A8

MAC223A10

VDRM,

VRRM

400

600

800

Volts

On–State Current RMS

Full Cycle Sine W ave 50 to 60 Hz

(TC = 80°C)

IT(RMS) 25 A

Peak Non–repetitive Surge Current

(One Full Cycle, 60 Hz, TC = 80°C)

Preceded and followed by rated current

ITSM 250 A

Circuit Fusing (t = 8.3 ms) I2t 260 A2s

Peak Gate Current

2.0 µsec; TC = +80°C) IGM 2.0 A

Peak Gate Voltage

2.0 µsec; TC = +80°C) VGM

10 Volts

Peak Gate Power

2.0 µsec; TC = +80°C) PGM 20 Watts

Average Gate Power

(TC = 80°C, t = 8.3 ms) PG(AV) 0.5 Watts

Operating Junction Temperature Range TJ–40 to 125 °C

Storage Temperature Range Tstg –40 to 150 °C

Mounting Torque — 8.0 in. lb.

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

TRIACS

25 AMPERES RMS

400 thru 800 VOLTS

Device Package Shipping

ORDERING INFORMATION

MAC223A6 TO220AB 500/Box

MAC223A8 TO220AB

MAC223A10 TO220AB

TO–220AB

CASE 221A

STYLE 4

123

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

http://onsemi.com

500/Box

MT1

MT2

Preferred devices are recommended choices for future use

and best overall value.

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case RθJC 1.2 °C/W

Thermal Resistance, Junction to Ambient RθJA 60 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise indicated; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current TJ = 25°C

(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°CIDRM,

IRRM —

——

—10

2.0 µA

ON CHARACTERISTICS

Peak On–State Voltage (ITM =

35 A Peak, Pulse Width

2 ms,

Duty Cycle

2%) VTM — 1.4 1.85 Volts

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(–), G(–); MT(+), G(–)

MT2(–), G(+)

IGT

—

—20

30 50

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(–), G(–); MT(+), G(–)

MT2(–), G(+)

VGT

—

—1.1

1.3 2.0

2.5

Volts

Gate Non–trigger Voltage

(VD = 12 V, TJ = 125°C, RL = 100 Ω)

All Quadrants

VGD 0.2 0.4 — Volts

Holding Current

(VD = 12 Vdc, Gate Open, Initiating Current =

200 mA) IH— 10 50 mA

T urn–On Time

(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — µs

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential W aveform, TC = 125°C) dv/dt — 40 — V/µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 35 A Peak, Commutating

di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

dv/dt(c) — 5.0 — V/µs

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 – VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(–) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(–) MT2

REF

MT1

(–) IGT

GATE

(–) MT2

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT – + IGT

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

C°

125

115

105

0 5.0 10 15 20 25

IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS)

, AVERAGE POWER DISSIPATION (WATTS)

0 5.0 10 15 20 25

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

NORMALIZED GATE CURRENT

3.0

2.0

1.0

0.2

0.1

–60 –40 –20 0 20 40 60 80

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERA TURE (°C)

TJ, JUNCTION TEMPERATURE (°C)

100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

–60 –40 –20 0 20 40 60 80 100 120 140

VD = 12 V

RL = 100 Ω

200

100

0.1

VTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

iTM, INST ANTANEOUS ON–STATE CURRENT (AMPS)

NORMALIZED GATE VOLTAGE

NORMALIZED HOLD CURRENT

0.3

0.5

3.0

2.0

1.0

0.2

0.1

0.3

0.5

2.0

1.0

0.2

0.1

0.3

0.5

1.0

5.0

1.0 2.0 3.0 4.0

VD = 12 V

RL = 100 Ω

ITM = 200 mA

Gate Open TJ = 25°C

Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage

Figure 5. Typical Hold Current Figure 6. Typical On–State Characteristics

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

TO–220AB

CASE 221A–07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

123

–T– SEATING

PLANE

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

Notes

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

Notes

MAC223A6, MAC223A8, MAC223A10

http://onsemi.com

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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “T ypicals” must be

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MAC223A/D

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