MJ E370 (SILICON) MJE370K MJE3370 lizing complementary symmetry circuitry. MJE520, MJES20K and MJE3520 PLASTIC MEDIUM-POWER PNP SILICON TRANSISTORS @ OC Current Gain heE = 25 (Min) @ Ic = 1.0 Ade @ MJE370, MJE370K and MJE3370 are Complementary with NPN @ Choice of Packages MSE370, 25 W Case 77 (E-C-B), MJE3370, 25 W Case 77 (B-C-E) MJE370K, 40 W Case 199 . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers uti- 3 AMPERE POWER TRANSISTORS PNP SILICON 30 VOLTS 25 and 40 WATTS MAXIMUM RATINGS Rating Symbol Nalue Unit Collector-Emitter Voltage VcEO 30 Vde Collector-Base Voltege Ves 30 Vde Emitter-Base Voltage Ves 4.0 Vde Cottector Current Continuous om 3.0 Adc Peak 70 Base Current Continuous Ip 2.0 Adc MAES7O | JE370K Total Device Dissipation @ Tc = 25C Pp 265 40 Watts Derate above 25C 0.2 | 0.32 wit Operating and Storage Junction Ty. Tstg ~65 to +150 % Temperature Rangs THERMAL CHARACTERISTICS Characteristic Symbot | M270 | saseaz0x Unit Thermal Resistance, Junction to Case asc 6.0 | 3.125 oCiw ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) {_ Characteristic [ symbot | Min | Max | Unie | OFF CHARACTERISTICS Collector-E mitter Sustaining Voltage(1)] VcEO (sus) 30 - Vde (Ig = 100 mAde, Ig = 0) Collector-Base Cutoff Current Ico - 100 wAdc (Vcg 30 Vde, te = 0} Emitter-Bese Cutoff Current lego - 100 uAdc (Veg = 4.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain hre 25 - - (Ig * 1.0 Ade, Vog = 1.0 Vdc) (1) Pulse Test: Pulse Width 300 us, Outy Cycle < 2.0%. 502 MJE3370 Style 3 MJE370 Style 1 CASE 77-03 MJE370K CASE 199-04MJE370, MJE370K, MJE3370 (continued) ACTIVE-REGION SAFE OPERATING AREA FIGURE 1 MJE3370 10 .0 3.0 2.0 Ty = 150C 1.0 e SECOND BREAKDOWN LIMITED > ~~ BONDING WIRE LIMITED THERMALLY LIMITED @ Tr = 25C 0.5 0.3 0.2 Ic, COLLECTOR CURRENT (AMP) a 1.0 5.0 10 20 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ic - Vc_E limits of the transistor that must be observed for reliable operation: i.e., the transistor must not de subjected to greater dissipation than the curves indicate. FIGURE 3 OC CURRENT GAIN hee, DC CURRENT GAIN 20 30 50 100 200.300 500 1000 Ic, COLLECTOR CURRENT (mA) 30 5.0 10 10 3.0 20 10 0.5 _ BONDING WIRE LIMITED 03- THERMALLY LIMITED @ Te = 25C 0.2 Ip, COLLECTOR CURRENT (AMP) Qt to 10 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) The date of Figures 1 and 2 based on Ty(px) = 150C: Te is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided Ty)p,) < 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN-415) FIGURE 4 ON VOLTAGE VOLTAGE (VOLTS) Vee tut} @ 10 10 0 30 Ic, COLLECTOR CURRENT (mA) 3.0 5.0 FIGURE 5 THERMAL RESPONSE 6 S 3 8, = (those 6yC = 5.0 CAV Max = MJE370, MJE3370 @ yc = 3.125CAW Max MJE370K z D CURVES APPLY FOR POWER 5 PULSE TRAIN SHOWN 2 READ T: ty = ' Ttpk) ~ Te = P(pk) @sc(t) z 00 Prot) 0.07 0.05 ti = cr -| 03 DUTY CYCLE, D = = Zoo 0.01 002 003 0.05 01 02 03 05 10 20 30 $0 10 2 30 50S 100,200 300 500-2000 t, TIME (ms) 503MJE370, MJE370K MJE3370 (continued) M imate J MJE371 MJE3371 STYLE 1 b=- STYLES PIN. EMITTER = Mamjlae PIN 1. BASE 2. COLLECTOR 2. COLLECTOR 3. BASE 3. EMITTER NOTE: 1. MT = MAIN TERMINAL CASE 77-03 F we T "Y 7 P e in A cdl y | Ty, | a ott chs MJE370K L R, STYLE1: -n{ | PIN1, BASE =4 2, COLLECTOR 3. EMITTER OM 1. DIM G tS TO CENTER LINE OF LEADS. CASE 199-04 504