BAV100
THRU
BAV103
Small Signal Diodes
Features
• For general purpose
• Silicon Epitaxial Planar Diodes
• These diodes are also available in other case styles including: the DO-35 case
with the type designations BAV19 to BAV21, the SOD-123 case with the type
designations BAV19W to BAV21W, the SOT-23 case with the type designations
BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to
BAV21WS.
Maximum Ratings
Continuous Reverse
Voltage BAV100
BAV101
BAV102
BAV103
VR 50V
100V
150V
200V
TA=25OC
Repetitive Peak Reverse
Voltage BAV100
BAV101
BAV102
BAV103
VRRM 60V
120V
200V
250V
TA=25OC
Forward DC Current IF 250mA TA=25OC(1)
Rectified Current (Average)
Half Wave Rectification
with Resist. Load I(FAV) 200mA f>50Hz,
TA=25OC
Repetitive Peak Forward
Current IFRM 625mA f>50Hz, TA=25OC(1)
Surge Forward Current IFSM 1.0A T<1s, Tj =25OC
Power Dissipation PTOT 400mW TA= 25OC
Thermal Resistance
Junction to Ambient Air(1) TA 375OC/W
Operating and Stora ge
temperature Range TS, TSTG -55 to +150OC
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
IF = 100mA
IF = 200mA VF 1.00V
1.25V TA=25OC
Maximum Leakage current
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
IR
100nA
15uA
100nA
15uA
100nA
15uA
100nA
15uA
VR=50V
VR=50V, Tj=100OC
VR=100V
VR=100V, Tj=100OC
VR=150V
VR=150V, Tj=100OC
VR=200V
VR=200V, Tj=100OC
Typital Capacitance CTOT 1.5pF VR=0V, f=1.0MHz
Maximum Reverse recovery
time trr 50ns IF=30mA, IR=30mA
Irr=3.0mA,
RL=100 OHM
Typical Dynamic Forward
Resistance RF 5.0 OHM IF=10mA
MINIMELF(SOD-80C)
A
B
C
Cathode Mark
DIMENSION
INCHES MM DIM
MIN MAX MIN MAX
NOTE
A .134 .142 3.40 3.60
B .008 .016 0.20 0.40
C .055 .059 1.40 1.50
0.030”
0.105
0.075”
SUGGESTED SOLDER
PAD LAYOUT
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 3 2002/12/31
MCC
www.mccsemi.com
Revision: 3 2002/12/31
BAV100 thru BAV103
Ω
MCC
www.mccsemi.com
Revision: 3 2002/12/31
BAV100 thru BAV103
