BUX10
HIGH POWER NPN SILICON TRANSISTOR
■STMicroelec tronic s PREF ERRE D
SALESTYPE
■NPN TRANSISTOR
■HIGH CURRENT CAPABILITY
■FAST SWITCHING SPEED
APPLICATIONS
■MOTOR CONTROL
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX10 is a silicon Multi-Epitaxial Planar
NPN transistor in Jedec TO-3 metal case,
intended for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAG RAM
March 2003
12
TO-3
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE = 0) 160 V
VCEX Collector-emitter Voltage (VBE = - 1.5V) 160 V
VCEO Collector-emitter Voltage (IB = 0) 125 V
VEBO Emitter-base Voltage (IC = 0) 7 V
ICCollector Current 25 A
ICM Collector Peak Current (tP < 10 ms) 30 A
IBBase Current 5 A
Ptot Total Power Dissipation at Tcase ≤ 25 oC150 W
Tstg Storage Temperature -65 to 200 oC
TjMax Operating Junction Temperature 200 oC
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB = 0) VCE = 100 V 1.5 mA
ICEX Collector Cut-off
Current VCE = 160 V VBE = -1.5V
Tcase = 125 oC
VCE = 160 V VBE = -1.5V
1.5
6
mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA 125 V
VEBO Emitter-Base Voltage
(IC = 0) IE = 50 mA 7 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 10 A IB = 1 A
IC = 20 A IB = 2 A 0.3
0.7 0.6
1.2 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 20 A IB = 2 A 1.6 2 V
hFE DC Current Gain IC = 10 A VCE = 2 V
IC = 20 A VCE = 4 V 20
10 60
IS/b Second Breakdown
Collector Current VCE = 30 V t = 1 s
VCE = 48 V t = 1 s 5
1A
A
fTTransistor Frequency I C = 1 A VCE =15 V
f = 10MHz 8 MHz
ton Turn-on Time IC = 20 A IB1 = 2 A
VCC = 30V 0.5 1.5 µs
ts
tfStorage Time
Fall Time IC = 20 A IB1 = - IB2 = 2A
VCC = 30V 0.6
0.15 1.2
0.3 µs
µs
Clamped Es/b
Collector Current Vclamp=125 V
L = 500 µH20 A
∗ P ulsed: P ulse durati on = 300µs, duty c ycle ≤ 2 %
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
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Information furnished is b elieved to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he consequ ences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t fro m its u se. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject t o change without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
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