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D44H11TU — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
D44H11 TU Rev. B1 1
March 2009
D44H11TU
NPN Epitaxial Silicon Transistor
Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
Fast Switching Speeds
Complement to KSE45H
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
NOTES:
1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) These ratings are based on a maximum junction temperature of 150degrees C.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 10 A
ICP Collector-Current (Pulse) 20 A
PC Collector Dissipation (TC=25°C) 50 W
Collector Dissipation (Ta=25°C) 1.67 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V
BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC= 0 5 V
ICES Collector Cut-off Current VCE = Rated VCEO, VEB = 0 10 μA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 μA
hFE DC Current Gain VCE = 1V, IC = 2A 60
VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V
VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 0.8A 1.5 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 50 MHz
Cob Output Capacitance VCB = 10V, f = 1MHz 130 pF
tON Turn On Time VCC = 20V, IC = 5A
IB1 = - IB2 = 0.5A
300 ns
tSTG Storage Time 500 ns
tF Fall Time 140 ns
1.Base 2.Collector 3.Emitter
1TO-220
D44H11TU — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
D44H11 TU Rev. B1 2
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
Figure 5. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
10
100
1000 f=100MHZ
Cob[pF], CAPACITA NCE
VCB[V], COLLECTOR-B ASE VOLTAGE
110100
0.1
1
10
44H 1,2
44H 4,5
44H 7,8
44H 10,11
100μs
10μs
1μs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
PC[W], POWER DISSIPATION
Tc[oC], CA SE TEMPERATURE
D44H11TU — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
D44H11 TU Rev. B1 3
Mechanical Dimensions
TO-220
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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