1999. 5. 4 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
·Low Saturation Voltage
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
·Complementary to the KTN2907S/2907AS.
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL
RATING
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5 6 V
Collector Current IC600 mA
Collector Power Dissipation
(Ta=25℃)PC350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : PC* : Package Mounted on 99.5% alumina 10×8×0.6mm.
MARK SPEC
Type Name
Marking
Lot No.
ZB Type Name
Lot No.
ZG
TYPE MARK
KTN2222S Z B
KTN2222AS Z G
1999. 5. 4 2/5
KTN2222S/AS
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KTN2222AS ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
Collector Cut-off Current
KTN2222S ICBO
VCB=50V, IE=0 - - 0.01 μA
KTN2222AS VCB=60V, IE=0 - - 0.01
Emitter Cut-off Current KTN2222AS IEBO VEB=3V, IC=0 - - 10 nA
Collector-Base
Breakdown Voltage
KTN2222S
V(BR)CBO IC=10μA, IE=0
60 - -
V
KTN2222AS 75 - -
Collector-Emitter *
Breakdown Voltage
KTN2222S
V(BR)CEO IE=10mA, IB=0 30 - -
V
KTN2222AS 40 - -
Emitter-Base
Breakdown Voltage
KTN2222S V(BR)EBO IE=10μA, IC=0
5 - -
V
KTN2222AS 6 - -
DC Current Gain *
KTN2222S
KTN2222AS
hFE(1) IC=0.1mA, VCE=10V 35 - -
hFE(2) IC=1mA, VCE=10V 50 - -
hFE(3) IC=10mA, VCE=10V 75 - -
hFE(4) IC=150mA, VCE=10V 100 - 300
KTN2222S hFE(5) IC=500mA, VCE=10V 30 - -
KTN2222AS 40 - -
Collector-Emitter *
Saturation Voltage
KTN2222S VCE(sat)1 IC=150mA, IB=15mA - - 0.4
V
KTN2222AS - - 0.3
KTN2222S VCE(sat)2 IC=500mA, IB=50mA - - 1.6
KTN2222AS - - 1
Base-Emitter *
Saturation Voltage
KTN2222S VBE(sat)1 IC=150mA, IB=15mA - - 1.3
V
KTN2222AS 0.6 - 1.2
KTN2222S VBE(sat)2 IC=500mA, IB=50mA - - 2.6
KTN2222AS - - 2.0
Transition Frequency
KTN2222S fT
VCE=20V, IC=20mA,
f=100MHz
250 - -
MHz
KTN2222AS 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
Input Capacitance
KTN2222S
Cib VEB=0.5V, IC=0, f=1.0MHz
- - 30
pF
KTN2222AS - - 25
1999. 5. 4 3/5
KTN2222S/AS
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Impedance KTN2222AS hie
IC=1mA, VCE=10V, f=1kHz 2 - 8
kΩ
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
Voltage Feedback Ratio KTN2222AS hre
IC=1mA, VCE=10V, f=1kHz - - 8
x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
Small-Singal Current Gain KTN2222AS hfe
IC=1mA, VCE=10V, f=1kHz 50 - 300
IC=10mA, VCE=10V, f=1kHz 75 - 375
Collector Output Admittance KTN2222AS hoe
IC=1mA, VCE=10V, f=1kHz 5 - 35
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant KTN2222AS Cc·rbb’ IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
Noise Figure KTN2222AS NF IC=100μA, VCE=10V,
Rg=1kΩ, f=1kHz - - 4 dB
Switching Time
Delay Time tdVCC=30V, VBE(OFF)=0.5V
IC=150mA, IB1=15mA
-- 10
nS
Rise Time tr- - 25
Storage Time tstg VCC=30V, IC=150mA
IB1=-IB2=15mA
- - 225
Fall Time tf- - 60
Ω
μ
1999. 5. 4 4/5
KTN2222S/AS
Revision No : 2
1999. 5. 4 5/5
KTN2222S/AS
Revision No : 2
