POWER MOS Iv ADVANCED POWER TECHNOLOGY APT8075BN 800V 13.0A 0.752 APT7575BN 750V 13.0A 0.752 APT8090BN 800V 12.0A 0.90Q APT7590BN 750V 12.0A 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Ty = 25C unless otherwise specified. APT Symbol | Parameter 7575BN | 8075BN | 7590BN | 8090BN | UNIT Voss _ | Drain-Source Voltage 750 800 750 800 Volts Continuous Drain Current 13.0 12.0 Amps lpm__| Pulsed Drain Current 52 48 Amps Vag Gate-Source Voltage +30 Volts Py Total Power Dissipation @ Ty = 26C, 310 Watts Derate Above 25C Ty T gq | Operating and Storage Junction Temperature Range - 55 to 150 C STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions / Part Number MIN TYP MAX {| UNIT BV sg Drain-Source Breakdown Voltage APT8075BN / APT8090BN 800 Volts (Vag = OV, Ip = 250 HA) APT7575BN/APT7590BN 750 Volts loss _ ; nee Voge Ves =0V) = uA os ~-" pss as = : 'o = lass Gate-Source Leakage Current (Ves =+t30V, Vos= OV} +100 nA I (ON) On State Drain Current APT8075BN / APT7575BN 13.0 Amps (Vpg > [p(ON) x R,.(ON) Max, V.. = 10V) | APT8090BN/APT7590BN 12.0 Amps Vagg(TH)| Gate Threshold Voltage (Vps = Vag fp = 1mA) 2 4 Volts Ripg(ON) Static Drain-Source On-State Resistance | APT8075BN/APT7575BN 0.75 | Ohms (Vgg = 10V, 1, = 0.5 I, [Cont.]) APTS090BN / APT7590BN 0.90 | Ohms THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP | MAX | UNIT Rese | Junction to Case 0.40 | CAV Rj, | Junction to Ambient 40 | CWW T, | Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. 300 WA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Proceduras Should Be Followed. USA 405 S.W. Columbia Street Ben EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 56 34 3471 FAX: (33) 56 47 97 61 d, Oregon 97702-1035 Phone: (503) 382-8028 FAX: (503) 388-0364 Page 144 050-8007 Rev B050-8007 Rev B DYNAMIC CHARACTERISTICS APT8075/7575,8090/7590BN Symbol | Characteristic Test Conditions MIN TYP | MAX | UNIT C,, | Input Capacitance Veg = OV 2410 | 2950 | pF oss || Output Capacitance Vig = 25V 370 520 pF C.., | Reverse Transfer Capacitance Fat MHz 120 } 180 pF Q, | Total Gate Charge @ 88 | 130 | nc Q,, | Gate-Source Charge Ves = 10V, Ip = |p [Cont] 8.9 13 nc Vpp = 0-5 Vogg Qy4 | Gate-Drain (Miller) Charge 44 67 nc t,(on) | Tum-on Delay Time 13 27 ns t, | Rise Time ; 130 = yes ey is | 36 | ns = ont.], = t,(off) | Tum-off Delay Time pee R=1 Bo. 62 94 ns gril. t, Fall Time 24 48 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions / Part Number MIN TYP MAX | UNIT . . APT8075BN / APT7575BN 13.0 | Amps Ig Continuous Source Current (Body Diode) APT8090BN / APT7590BN 12.0 | Amps @ APT8075BN / APT7575BN 52 Amps Igy | Pulsed Source Current Y (Body Diode) APTSO90BN / APT7590BN 48 Amps Vp _| Diode Forward Voltage @ (V,,. = OV, I, = -1, [Cont.}) 1.3. | Volts it Reverse Recovery Time il, = lL, [Cont.], di./dt = 100A/us) 328 656 1300 ns rr__| Reverse Recovery Charge 3.1 6.2 12 yc SAFE OPERATING AREA CHARACTERISTICS Symbol | Characteristic Test Conditions / Part Number MIN | TYP | MAX | UNIT SOA1 | Safe Operating Area Vg = 0-4 Vice: Ing = Pp / 0.4 Vigg, t= 1 Sec. | 310 Watts SOA2 | Safe Operating Area log = fp [Cont], Vong =P, /1, [Cont], t= 1 Sec.) 310 Watts Bi lina Inductive Current Clamped APT8075BN / APT7575BN 52 Amps APT&090BN / APT7SS0BN 48 Amps DRepetitive Rating: Pulse width timited by maximum junction temperature. See Transient Thermal impedance Curve. (Fig.1} pulse Test: Pulse width < 380 uS, Duty Cycle < 2% @see MIL STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 = 0.5 Oo Q 8 z 0.1 a i 0.05 = od < = & 0.01 Fe 0.005 we SINGLE PULSE 0.001 105 to4 103 = e jets t 2 Duty Factor D= hy Peak Ts = Poy XZgug + Te 1072 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Page 145 1.0 iDAPT8075/7575/8090/7590BN 16 v &10V eo iw & 12 a = = Kk z i Fl 3 & z z a av 6 50 100 1680 200 250 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 Ty T= 425C a rc 16 x ul Seo, PULSE Test T= 4125C 5 J =< 12 & Lu a 8 z a ~ 4 = s ret = 325 T uF 425C = 55C % 2 4 6 8 Vg@g, GATE-TO-SOURCE VOLTAGE (VOLTS} FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16 a fe a 12 z E uw 8 x 5 a z ff 4 a 5 0 25 50 76 100 125 150 Tg, CASE TEMPERATURE (C} FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 Ip 29.5 Vac = 10V nd o _ a ot o 2 in Ripg(ON), DRAIN-TO-SOURCE ON RESISTANCE . (NORMALIZED) 5 o a 0 -25 0 25 50 125 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 75 100 150 ' Oo Ip, DRAIN CURRENT (AMPERES) 0 Q 2 4 6 & 10 12 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 25 - T= 25C SEC. PULSETEST | Vag=t0V NORMALIZED To 20 = 10V 05 1, [Cont] 15 Vgg=20v 1.0 (NORMALIZED) 0.5 0.0 Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 10 20 30 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, Rpg(ON) vs DRAIN CURRENT 12 0.9 0.8 BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.7 50 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 14 1.2 O8 (NORMALIZED) 0.6 Vag(TH), THRESHOLD VOLTAGE (VOLTS) 0.4 50 -25 0 25 50 75 100 125 150 To, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-8007 Rev B Page 146050-8007 Rev B 10S 100nS ims 10mS 100mS c =+150C DC Ip, DRAIN CURRENT (AMPERES) APT8075/80S0BN 4 5 10 50 100 5C0 1000 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 B =f, [Cont] Ee = a Vps720v = 16 u 160V <= Ee a 12 > 2 3 8 e us 4 3 oe % 160 200 40 80 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE APT8075/7575/8090/7590BN 10,000 1,000 C, CAPACITANCE (pF) 3S 6 105 10 20.30. +40. ~~~<50 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TG-SOURCE VOLTAGE 100 50 20 Ty = +180C T= 426C 10 1 lpR: REVERSE DRAIN CURRENT (AMPERES): Q O05 1.0 Vgp , SOURCE-TO-DRAIN VOLTAGE (VOLTS} FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 1.5 2.0 TO-247AD Package Ouiline 4.89 (185 T 5.31 {358} < 15.49 (sia >| 1818) pean ly | 518 (20) BSC 520 (34a) s 20.89 (aye O + LM , a 48 (B45 3.55 (140) 3.81 {160 Le! yO Msocirmme a (ng rye gata co 140 re Drain Source Y a lx $23 (585) 5.25 (.215) BSC Dimensions jn Milimeters and (Inches) Page 147