DATA SH EET
Product specification
Supersedes data of 1997 Apr 22 1999 Apr 23
DISCRETE SEMICONDUCTORS
BSP50; BSP51; BSP52
NPN Darlington transistors
handbook, halfpage
M3D087
1999 Apr 23 2
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
PINNING
PIN DESCRIPTION
1 base
2,4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
123
MAM265
Top view
1
2, 4
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BSP50 60 V
BSP51 80 V
BSP52 90 V
VCES collector-emitter voltage VBE =0
BSP50 45 V
BSP51 60 V
BSP52 80 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 1A
I
CM peak collector current 2A
I
Bbase current (DC) 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 1.25 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 23 3
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook
“.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 96 K/W
Rth j-s thermal resistance from junction to solder point 17 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES collector cut-off current
BSP50 VBE = 0; VCE =45V −−50 nA
BSP51 VBE = 0; VCE =60V −−50 nA
BSP52 VBE = 0; VCE =80V −−50 nA
IEBO emitter cut-off current IC= 0; VEB =4V −−50 nA
hFE DC current gain VCE = 10 V; note 1; see Fig.2
IC= 150 mA 1000 −−
I
C
= 500 mA 2000 −−
V
CEsat collector-emitter saturation
voltage IC= 500 mA; IB= 0.5 mA −−1.3 V
IC= 500 mA; IB= 0.5 mA;
Tj= 150 °C−−1.3 V
VBEsat base-emitter saturation
voltage IC= 500 mA; IB= 0.5 mA −−1.9 V
fTtransition frequency IC= 500 mA; VCE = 5 V; f = 100 MHz 200 MHz
Switching times (between 10% and 90% levels); see Fig.3
ton turn-on time ICon = 500 mA; IBon = 0.5 mA;
IBoff =0.5 mA 500 ns
toff turn-off time 1300 ns
1999 Apr 23 4
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
1011IC (mA)
hFE
10 102103
VCE =10V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
Vi
VCC
Vi= 10 V; T = 200 µs; tp=6µs; tr=t
f3 ns.
R1 = 56 ; R2 = 10 k; RB=10k; RC=18.
V
BB =1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi=50.
1999 Apr 23 5
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 96-11-11
97-02-28
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
1999 Apr 23 6
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 23 7
Philips Semiconductors Product specification
NPN Darlington transistors BSP50; BSP51; BSP52
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05809