Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2009 www.anpec.com.tw2
APM1102PF
Absolute Maximum Ratings
Symbol
Parameter Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage -100
VGSS Gate-Source Voltage ±25 V
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current -10 A
TC=25°C -120
IDP 300µs Pulse Drain Current Tested TC=100°C -72 A
TC=25°C -30
ID Continuous Drain Current TC=100°C -18 A
TC=25°C 62.5
PD Maximum Power Dissipation TC=100°C 25 W
RθJC Thermal Resistance-Junction to Case 2
RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Drain-Source Avalanche Energy, L=0.5mH 150 mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
APM1102PF
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -100
- - V
VDS=-80V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain Current
TJ=85°C
- - -30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1.5
-2.2
-3 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100
nA
VGS=-10V, IDS=-20A - 33 42
RDS(ON) a
Drain-Source On-state Resistance VGS=-4.5V, IDS=-10A - 39 52 mΩ
Diode Characteristics
VSDa Diode Forward Voltage ISD=-10A, VGS=0V - -0.8
-1.1
V
trr Reverse Recovery Time - 41 - ns
Qrr Reverse Recovery Charge IDS=-20A, dlSD/dt=100A/µs
- 73 - nC