TPCF8003 - Toshiba - Product.Live

TPCF8003

2010-01-14

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TPCF8003

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)

（VGS= 4.5V）

• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)

• Enhancement mode: Vth = 0.5 to 1.2 V

(VDS = 10 V, ID = 200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 20 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V

Gate-source voltage VGSS ±12 V

DC (Note 1) ID 7

Drain current

Pulse (Note 1) IDP 28

Drain power dissipation (t = 5 s)

(Note 2a)

PD 2.5 W

Drain power dissipation (t = 5 s)

(Note 2b)

PD 0.7 W

Single pulse avalanche energy (Note 3) EAS 3.2 mJ

Avalanche current IAR 3.5 A

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics Circuit Configuration

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient (t = 5 s)

(Note 2a) Rth (ch-a) 50.0 °C/W

Thermal resistance, channel to ambient (t = 5 s)

(Note 2b) Rth (ch-a) 178.6 °C/W

Note: For Notes 1 to 3, refer to the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3U1A

Weight: 0.011 g (typ.)

1. Drain

2. Drain

3. Drain

4. Gate

5.Source

6. Drain

7. Drain

8. Drain

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Marking (Note 4)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 3.5 A

Note 4: • on lower left of the marking indicates Pin 1.

Note 5: A dot marking for identifying the indication of product Labels.

Without a dot: [[Pb]]/INCLUDES > MCV

With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

(b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

Part No.

(or abbreviation code) F2C

Note５

Lot code (month) Lot No.

Pin #1 Lot code

(year)

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±12 V, VDS = 0 V ⎯ ⎯ ±100 nA

Drain cut-off current IDSS V

DS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA

V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯

Drain-source breakdown voltage

V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯

Gate threshold voltage Vth V

DS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V

VGS = 2.5 V, ID = 3.5 A ⎯ 24 34

Drain-source ON-resistance RDS (ON)

VGS = 4.5 V, ID = 3.5 A ⎯ 14 18

mΩ

Input capacitance Ciss ⎯ 500 ⎯

Reverse transfer capacitance Crss ⎯ 155 ⎯

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯ 215 ⎯

Rise time tr ⎯ 5.2 ⎯

Turn-on time ton ⎯ 11 ⎯

Fall time tf ⎯ 10 ⎯

Switching time

Turn-off time toff

Duty ≤ 1%, tw = 10 μs ⎯ 23 ⎯

Total gate charge

(gate-source plus gate-drain) Qg ⎯ 9.5 ⎯

Gate-source charge 1 Qgs1 ⎯ 1.6 ⎯

Gate-drain (“miller”) charge Qgd

VDD ≈ 16 V, VGS = 5 V, ID = 7.0 A

⎯ 4 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse

current Pulse (Note 1) IDRP — — — 28 A

Forward voltage (diode) VDSF IDR = 7.0 A, VGS = 0 V — — −1.2 V

RL = 2.9Ω

VDD ≈ 10 V

0 V

VGS

5 V

4.7 Ω

ID = 3.5 A

VOUT

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ID – VDS

0 2 4

VGS = 1.6 V

10 4.5

2.2

1.8

2.4

2.6

2.8

ID – VDS

0 0.2 0.4

0.6 0.8

VGS

1.6 V

4.5

2.2

1.7

1.8

1.9

2.4

2.6

2.8

0.1 10

1000

100

4.5

VGS = 2.5 V

0.3

ID = 7 A

2 4 8

1.8 3.5

0.2

0.1

0.4

0.5

0 0 1 24

Ta = −55°C

100

0.5 1.5 3.5 2.5

Drain-source voltage VDS (V)

Drain current ID (A)

RDS (ON) – ID

Drain-source ON-resistance

RDS (ON) (mΩ)

Drain-source voltage VDS (V)

Drain current ID (A)

Gate-source voltage VGS (V)

ID – VGS

Drain current ID (A)

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

VDS – VGS

Common source

Ta = 25°C

Pulse test

Common source

VDS = 10 V

Pulse test

Common source

Ta = 25°C

Pulse test

Common source

Ta = 25°C

Pulse test

Common source

Ta = 25°C

Pulse test

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8 4

VDD = 16 V

VDS

0.8

−80 −40 0 40 80 120 160

0.4

1.6

1.2

0.1

1000

10000

1 10 100

Ciss

Coss

rss

100

−0.4

100

−0.6 −1.2

VGS = 0 V

4.5 2.5

−1

−0.2 −0.8

160 −40 0 40 80 120 −80

VGS = 4.5 V

VGS = 2.5 V

ID = 1.8, 3.5, 7 A

2.0

1.5

2.5

1.0

0.5

0 40 80 120 160

(1)

(2)

3.0

Drain-source voltage VDS (V)

Capacitance – VDS

Capacitance C (pF)

Drain-source voltage VDS (V)

IDR – VDS

Drain reverse current IDR (A)

Gate threshold voltage Vth (V)

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source ON-resistance

RDS (ON) (mΩ)

Total gate charge Qg (nC)

Drain-source voltage VDS (V)

Dynamic input/output characteristics

Gate-source voltage VGS (V)

Common source

Ta = 25°C

Pulse test

Common source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Common source

VDS = 10 V

ID = 0.2 mA

Pulse test

Common source

Pulse test

Common source

ID = 7 A

Ta = 25°C

Pulse test

Ambient temperature Ta (°C)

PD – Ta

Drain power dissipation PD (W)

(1) Device mounted on a glass-epoxy board (a) (Note 2a)

(2) Device mounted on a glass-epoxy board (b) (Note 2b)

t = 5 s

ID = 1.8, 3.5, 7 A

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t =1 ms*

VDSS max

t =10 ms*

100

0.1 10

100

0.1

0.001

100

1000

0.01 0.1 1 10 100 1000

(2)

(1)

0.1

Transient thermal impedance

rth (°C/W)

Pulse width tw (s)

rth – tw

(1) Device mounted on a glass-epoxy board (a) (Note 2a)

(2) Device mounted on a glass-epoxy board (b) (Note 2b)

Single - pulse

Drain current ID (A)

Drain-source voltage VDS (V)

Safe operating area

ID max (Pulse) *

* Single-pulse

Ta = 25℃

Curves must be derated

linearly with increase in

temperature.

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TPCF8003

2010-01-14

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling

equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric

power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

document.

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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY

WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without

limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile

technology products (mass destruction weapons). Product and related software and technology may be controlled under the

Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product

or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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