9.1 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
1N4765 thru 1N4774A
WWW.Microsemi .COM 1N4765 – 1N4774A 4765 – 1N4774A
DESCRIPTION APPEARANCE
The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a
selection of 9.1 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.1V +/- 5%
Internal metallurgical bonds
JANS Equivalent available via SCD
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers. For
example, designate “MX1N4769A” for a JANTX
screen
Radiation Hardened devices available by
changing “1N” prefix to “RH”, e.g. RH4769A, RH
4774A, etc. Also consult factory for “RH” data
sheet brochure for other radiation hardened
reference diode products.
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available
from 0.01%/ºC to 0.0005%/ºC
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%,
1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
MAXIMUM RATINGS MECHANICAL AND PACKAGING
Operating & StorageTemperature: -65oC to
+175oC
DC Power Dissipation: 250 mW @ TL = 25oC
NOTE: For optimum voltage-temperature
stability, the test current IZT = 0.5 or 1.0 mA as
shown in Electrical Characteristics (less than 10
mW in dissipated power)
Solder temperatures: 260 oC for 10 s (maximum)
CASE: Hermetically sealed glass case with
DO-7 (DO-204AA) package
TERMINALS: Tin-lead plated and solderable
per MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated
with the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright 2003
8-19-2003 REV A
9.1 Volt Temperature Compensated Zener
Reference Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright 2003
8-19-2003 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N4765 thru 1N4774A
1N4765 – 1N4774A
*ELECTRICAL CHARACTERISTICS @ 25oC
ZENER
VOLTAGE
(Note 3)
ZENER
TEST
CURRENT
MAXIMUM
DYNAMIC
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 2 & 3)
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
αVZ
VZ @ IZT IZT Z
ZT I
R VZT
JEDEC
TYPE
NUMBER
VOLTS mA OHMS µA mV oC %/oC
1N4765
1N4765A
1N4766
1N4766A
9.1
9.1
9.1
9.1
0.5
0.5
0.5
0.5
350
350
350
350
10
10
10
10
68
141
34
70
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.01
0.01
0.005
0.005
1N4767
1N4767A
1N4768
1N4768A
9.1
9.1
9.1
9.1
0.5
0.5
0.5
0.5
350
350
350
350
10
10
10
10
14
28
7
14
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.002
0.002
0.001
0.001
1N4769
1N4769A
1N4770
1N4770A
9.1
9.1
9.1
9.1
0.5
0.5
1.0
1.0
350
350
200
200
10
10
10
10
3
7
68
141
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.0005
0.0005
0.01
0.01
1N4771
1N4771A
1N4772
1N4772A
9.1
9.1
9.1
9.1
1.0
1.0
1.0
1.0
200
200
200
200
10
10
10
10
34
70
14
28
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.005
0.005
0.002
0.002
1N4773
1N4773A
1N4774
1N4774A
9.1
9.1
9.1
9.1
1.0
1.0
1.0
1.0
200
200
200
200
10
10
10
10
7
14
3
7
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.001
0.001
0.005
0.005
*JEDEC Registered Data.
NOTES:
1. Measured by superimposing IZ ac rms on IZ dc @ +25oC where IZ ac rms = 10% IZ dc.
2. Maximum allowable change between any two discrete temperatures over the specified temperature range.
3. Voltage measurements to be performed 15 seconds after application of dc current.
4. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A.
5. Consult factory for TX, TXV or JANS equivalent SCDs.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm