BAV100/101/102/103
Small Signal Product CREAT BY ART
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- Halogen-free according to IEC 61249-2-21
- Polarity: Indicated by black cathode band
SYMBOL UNIT
P
D
mW
V
RRM
V
I
F(AV)
mA
T
J
, T
STG
°C
Electrical Characteristics SYMBOL UNIT
V
F
V
R
θJA
°C/W
C
J
pF
t
rr
ns
Document Number: DS_S1501002 Version: C15
Taiwan Semiconductor
Hermeticall
Sealed Glass Hi
h Volta
e Switchin
Diodes
FEATURES
MINI MELF
MECHANICAL DATA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
500
250
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER VALUE
MIN MAX
60
-
Non-repetitive peak forward
surge current A
4.0
-65 to +200
1.0
V
120
200
250
Forward voltage -1.0
-5.0
350
-
100
nA
100
100
100
- 50
Notes : Reverse recovery test conditions : I
F
= I
R
= 30 mA , I
rr
= 3 mA , R
L
= 100 Ω
I
FSM
PARAMETER
Operating and storage temperature range
B
V
BAV103 V
R
= 200 V
Peak reverse current
Junction capacitance
Average rectified forward current
Repetitive peak reverse voltage
Power dissipation
Pulse width = 1.0 s
Pulse width = 1.0 μs
BAV103 I
R
= 100 μA
BAV102 I
R
= 100 μA
BAV101 I
R
= 100 μA
BAV100 I
R
= 100 μA
Breakdown voltage
BAV100 V
R
= 50 V
I
F
= 100 mA
(Note)
V
R
= 0 , f = 1.0 MHz
I
R
Thermal resistance, junction to ambient
Reverse recovery time
BAV102 V
R
= 150 V
BAV101 V
R
= 100 V
BAV100 & BAV102
Not Recommended