NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3. Reverse Recovery Test conditions: I
F
=0.5A, I
R
=1A, I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
@T
A
=
75 C
1N4001GL thru 1N4007GL
FEATURE S
Glass passivated chi p
Low reverse leakage current
Low forwa rd volt age dro p
High current capability
Plastic materi al has UL flammability clas sificatio n 94V-0
MECHANICAL DATA
Case : JEDEC A-405 molded plastic
Polarity : Color band denotes cathode
Weight : 0.008 ounces, 0.22 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N
4003 GL
200
140
200
1N
4001 GL
50
35
50
1N
4007GL
1000
700
1000
1N
4002GL
100
70
100
1N
4006 GL
800
560
800
1N
4005GL
600
420
600
1N
4004GL
400
280
400
Maximum Av erage Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maxim um Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.0
30
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JA
45
C/W
C
J
Typical Junction Capacitance (Note 1)
10
pF
I
R
Maximum DC Rev erse Cu rrent
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 5.0
50
uA
V
F
Maxim um forward Voltage at 1.0A DC
1.1
V
A
A
V
UNIT
V
V
All Dimensions in millim ete r
Max.
Min.
A-405
Dim.
A
D
C
B 25.4 5.20
-
4.1 0
0.53
2.00 2.70
0.64
A-405
A
C
D
A
B
Typical Reverse Recovery Time (Note 3) T
RR
2.0
us
SYMBOL
CHARACTERISTICS
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE
- 50
to
100 0
Volts
FORWARD CURRENT
- 1.0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDDB01