THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB = 0) VCE = 100 V 1.5 mA
ICEX Collector Cut-off
Current VCE = 160 V VBE = -1.5V
Tcase = 125 oC
VCE = 160 V VBE = -1.5V
1.5
6
mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = 200 mA 125 V
VEBO Emitter-Base Voltage
(IC = 0) IE = 50 mA 7 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 10 A IB = 1 A
IC = 20 A IB = 2 A 0.3
0.7 0.6
1.2 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 20 A IB = 2 A 1.6 2 V
hFE DC Current Gain IC = 10 A VCE = 2 V
IC = 20 A VCE = 4 V 20
10 60
IS/b Second Breakdown
Collector Current VCE = 30 V t = 1 s
VCE = 48 V t = 1 s 5
1A
A
fTTransistor Frequency I C = 1 A VCE =15 V
f = 10MHz 8 MHz
ton Turn-on Time IC = 20 A IB1 = 2 A
VCC = 30V 0.5 1.5 µs
ts
tfStorage Time
Fall Time IC = 20 A IB1 = - IB2 = 2A
VCC = 30V 0.6
0.15 1.2
0.3 µs
µs
Clamped Es/b
Collector Current Vclamp=125 V
L = 500 µH20 A
∗ P ulsed: P ulse durati on = 300µs, duty c ycle ≤ 2 %
BUX10
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