LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = RDS(on) N-Channel Enhancement Mode Avalanche Rated 1000V 30A 450m miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 S D V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 70 A IA EAS TC = 25C TC = 25C 30 2 A J PD TC = 25C 800 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. -55 ... +150 150 -55 ... +150 C C C Features 300 260 C C * MiniBLOC with Aluminium Nitride 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. * Designed for Linear Operation * International Standard Package * Avalanche Rated * Molding Epoxy Meets UL94 V-0 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1 Minute t = 1 Second Weight G = Gate S = Source D = Drain Isolation Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) * Easy to Mount * Space Savings * High Power Density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 * IDSS, Note 1 V 5.5 V 200 nA 50 A 1 mA TJ = 125C 450 m Applications * * * * * * Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls DS99813A(10/10) (c) 2010 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ IXTN30N100L Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 * IDSS, Note 1 6 10 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * IDSS td(off) RG = 2 (External) tf Qg(on) Qgs VGS = 20V, VDS = 0.5 * VDSS, ID = 0.5 * IDSS Qgd 15 SOT-227B (IXTN) Outline S 13.7 nF 980 pF 115 pF 36 ns 70 ns 100 ns 78 ns 545 nC 86 nC 165 nC RthJC (M4 screws (4x) supplied) 0.156 C/W RthCS 0.05 C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 600V, ID = 0.5A, TC = 90C 300 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Note Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 1000 IF = IS, -di/dt = 100A/s VR = 100V, VGS = 0V ns 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN30N100L Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 70 30 VGS = 20V 14V 12V 25 10V 50 20 ID - Amperes ID - Amperes VGS = 20V 14V 60 9V 15 12V 40 30 10V 8V 10 20 9V 5 7V 10 6V 0 0 1 2 3 4 5 6 7 8 0 9 10 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature 30 3.0 VGS = 20V 12V 10V VGS = 20V 2.6 20 R DS(on) - Normalized 25 ID - Amperes 8V 7V 9V 15 8V 10 2.2 1.8 1.0 6V 0.6 0 I D = 15A 1.4 7V 5 I D = 30A 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 2.6 VGS = 20V 2.4 TJ = 125C 30 25 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25C 20 15 10 1.2 5 1.0 0.8 0 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 TJ - Degrees Centigrade ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ 100 IXTN30N100L Fig. 7. Input Admittance Fig. 8. Transconductance 45 22 40 20 TJ = - 40C 18 35 25C 30 25 g f s - Siemens ID - Amperes 16 TJ = 125C 25C - 40C 20 15 125C 14 12 10 8 6 10 4 5 2 0 0 4 5 6 7 8 9 10 11 0 5 10 15 20 VGS - Volts 25 30 35 40 45 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 20 90 18 80 16 70 14 VDS = 500V I D = 15A VGS - Volts IS - Amperes I G = 10mA 60 50 40 TJ = 125C 30 12 10 8 6 TJ = 25C 20 4 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 50 100 VSD - Volts 150 200 250 300 350 400 450 500 550 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 10,000 Ciss Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 0.001 0.0001 VDS - Volts 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. http://store.iiic.cc/ 1 10 IXTN30N100L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 90C 100 100 RDS(on) Limit 25s RDS(on) Limit 25s 100s 100s 10 10 ID - Am peres ID - Am peres 1ms 10ms 1ms 10ms 1 1 DC TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 25C Single Pulse 0.1 DC 0.1 10 100 1000 10000 10 VDS - Volts 100 1000 10000 VDS - Volts (c) 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_30N100L(9N)4-05-07-A http://store.iiic.cc/