© 2010 IXYS CORPORATION, All Rights Reserved DS99813A(10/10)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1000 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 30 A
IDM TC= 25°C, Pulse Width Limited by TJM 70 A
IATC= 25°C30A
EAS TC= 25°C2J
PDTC= 25°C 800 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1 Minute 2500 V~
IISOL ≤ 1mA t = 1 Second 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
LinearTM Power MOSFET
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
IXTN30N100L VDSS = 1000V
ID25 = 30A
RDS(on) ≤≤
≤≤
≤ 450mΩΩ
ΩΩ
Ω
Features
•MiniBLOC with Aluminium Nitride
Isolation
•Designed for Linear Operation
•International Standard Package
•Avalanche Rated
•Molding Epoxy Meets UL94 V-0
Flammability Classification
Advantages
•Easy to Mount
•Space Savings
•High Power Density
Applications
•Programmable Loads
•Current Regulators
•DC-DC Converters
•Battery Chargers
•DC Choppers
•Temperature and Lighting Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 1 mA
RDS(on) VGS = 20V, ID = 0.5 • IDSS, Note 1 450 mΩ
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
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IXTN30N100L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • IDSS, Note 1 6 10 15 S
Ciss 13.7 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 980 pF
Crss 115 pF
td(on) 36 ns
tr 70 ns
td(off) 100 ns
tf 78 ns
Qg(on) 545 nC
Qgs VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 86 nC
Qgd 165 nC
RthJC 0.156 °C/W
RthCS 0.05 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 600V, ID = 0.5A, TC = 90°C 300 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 30 A
ISM Repetitive, Pulse Width Limited by TJM 120 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 1000 ns
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 2Ω (External)
IF = IS, -di/dt = 100A/μs VR = 100V, VGS = 0V
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
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© 2010 IXYS CORPORATION, All Rights Reserved
IXTN30N100L
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
5
10
15
20
25
30
012345678910
V
DS
- V olts
I
D
- Ampe res
VGS
= 20V
14V
12V
10V
7V
8V
9V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- V olts
I
D
- Ampe res
12V
VGS
= 20V
14V
8V
7V
9V
10V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
5
10
15
20
25
30
024681012141618202224
V
DS
- V olts
I
D
- Amperes
9V
VGS
= 20V
12V
10V
6V
7V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 15A
Valu e vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
VGS
= 20V
I D = 30A
I D = 15A
Fig. 5. R
DS(on)
Normalized to I
D
= 15A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 10203040506070
I
D
- A mperes
R
DS(on)
- Normalized
VGS
= 20V TJ = 125ºC
TJ = 25ºC
Fi g . 6. Maxi mum Drain C u r r en t vs.
Case Temper atu r e
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
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IXTN30N100L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
4567891011
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
0 5 10 15 20 25 30 35 40 45
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250 300 350 400 450 500 550
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 15A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mum T r an si en t Th er mal I mpedan ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_30N100L(9N)4-05-07-A
IXTN30N100L
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.1
1
10
100
10 100 1000 10000
VDS - Vo lt s
ID - Amp ere s
25µs
1ms
100µs
10ms
DC
R
DS(on)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 90ºC
0.1
1
10
100
10 100 1000 10000
VDS - Vo lt s
ID - Amp ere s
25µs
1ms
100µs
10ms
DC
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
R
DS(on)
Limit
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