Automotive Power
Datasheet
Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
104 mOhm single channel smart low side power switch for 12V & 24V Application
HITFET
Smart Low Side Power Switch
Datasheet 2 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Pin Assignment BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.3.1 Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1.1 Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.1 Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.2 Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.1 Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.2 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.3 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7 Package Outlines BTS3104SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
PG-TO252-3-11
Type Package Marking
BTS3104SDR PG-TO252-3-11
Datasheet 3 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
BTS3104SDR
1Overview
Features
• Short circuit and over load protection
• Thermal shutdown with restart behavior
• ESD protection
• Over voltage protection
• Logic level input suitable for 5V and 3.3V
• Analog driving possible
• 12V and 24V usability
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTS3104SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing
embedded protective functions.
The device is monolithically integrated with a N channel vertical power FET and embedded protection functions.
The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications.
Table 1 Product Summary
Drain voltage1)
1) Active clamped
VD60 V
Maximum Input Voltage VIN 10 V
Maximum On-State resistance at 150°C at 5V input voltage RDS(ON) 323 mΩ
Typical On-State resistance at 25°C and 10V input voltage RDS(ON) 104 mΩ
Nominal load current ID(nom) 2.0 A
Minimum current limitation level ID(lim) 6A
Datasheet 4 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Overview
Protective Functions
• Electrostatic discharge protection (ESD)
• Active clamp over voltage protection
• Thermal shutdown with restart behavior
• Over load and Short circuit protection
• Current limitation
Analog Fault Information
• Thermal shutdown
• Short to Battery
• Overload
Applications
• Designed for inductive and lamp loads in automotive and industrial applications.
• 12V and 24V applications
• All types of resistive, inductive and capacitive loads
• Replaces discrete circuits
Detailed Description
The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum
current capabilities.
The BTS3104SDR offers ESD protection on the IN Pin which refers to the Source pin (Ground).
The overtemperature protection prevents the device from overheating due to overload and/or bad cooling
conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal
shutdown the device sinks an increased input current at the IN pin to feedback the fault condition.
The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the
measured temperature has dropped below the thermal hysteresis.
The over voltage protection gets activated during load dump or inductive turn off conditions. The power MOSFET
is limiting the drain-source voltage, if it rises above the VDS(clamp).
HITFET - BTS3104SDR
Smart low side power switch
Block Diagram
Datasheet 5 Rev. 1.0, 2009-12-06
2 Block Diagram
Figure 1 Block Diagram
2.1 Terms
Figure 2 shows all external terms used in this data sheet.
Figure 2 Naming of electrical parameters
Drain
Source
IN
Over-
voltage
Protection
Gate
Driving
Unit
ESD
Protection
Over-
temperature
Protection
Over-
current
limitation
BlockDiagram.emf
V
bat
GND
Terms.emf
IN
V
bat
V
IN
I
IN
R
IN
Source
I
So u r c e
Z
L
I
D
V
D
Drain
Datasheet 6 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Pin Configuration
3 Pin Configuration
3.1 Pin Assignment BTS3104SDR
Figure 3 Pin Configuration PG-TO252-3-11
3.2 Pin Definitions and Functions
Pin Symbol Function
1 IN Input and fault feedback
2,4 Drain Load connection for power DMOS
3 Source Ground, Source of power DMOS
(top view )
4 (Tab)
13
2
Drain
HITFET - BTS3104SDR
Smart low side power switch
General Product Characteristics
Datasheet 7 Rev. 1.0, 2009-12-06
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation
4.2 Functional Range
Absolute Maximum Ratings1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design.
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Max.
Voltages
4.1.1 Drain voltage VD–60V
2) VIN = 0 V, ID = 10 mA
2) Active clamped.
4.1.2 Drain voltage for short circuit protection VD(SC) –36VVIN = 5 V
RSC = 200mOhm
LSC = 5µH
4.1.3 Input Current IIN self limited mA -0.2 V < VIN < 10 V
-2 2 mA VIN < -0.2 V
or VIN > 10 V
4.1.4 Drain Current ID–6A
3)
3) Active limited
Energies
4.1.5 Unclamped single pulse inductive energy
single pulse
EAS –50mJID(Start) = 4.5A
Vbat = 24 V;
TJ(start) = 150 °C
Temperatures
4.1.6 Operating temperature TJ-40 +150 °C–
4.1.7 Storage temperature TSTG -55 +150 °C–
ESD Susceptibility
4.1.8 ESD Resistivity VESD -2 2 kV HBM4)
4) ESD susceptibility, HBM according to EIA/JESD 22-A114, Pin Source connected to Ground
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
4.2.1 Input pin voltage (device ON) VIN 210V–
4.2.2 Drain voltage VD2.5 36 V –
Datasheet 8 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
General Product Characteristics
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards.
For more information, go to www.jedec.org.
4.2.3 Input pin current consumption IIN(ON) – 30 µA normal operation
4.2.4 Input pin feedback current IIN(lim) – 300 µA fault indication
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
4.3.5 Junction to Case RthJC ––1.3K/W
1) 2)
1) Not subject to production test, specified by design
2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature).
Ta = 25 °C. Device is loaded with 1W power.
4.3.6 Junction to Ambient (2s2p) RthJA(2s2p) –28–K/W
1) 3)
3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers
(2 x 70 μm Cu, 2 x 35 μm Cu). Ta = 25 °C, Device is loaded with 1W power.
4.3.7 Junction to Ambient
(1s0p+600mm2 Cu)
RthJA(1s0p) –48–K/W
1) 4)
4) Specified RthJA value is according to Jedec JESD51-2,-3 at natural convection on FR4 1s0p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area
of 600mm2 and 70 μm thickness. Ta = 25 °C, Device is loaded with 1W power.
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
HITFET - BTS3104SDR
Smart low side power switch
General Product Characteristics
Datasheet 9 Rev. 1.0, 2009-12-06
4.3.1 Transient Thermal Impedance
Figure 4 Typical transient thermal impedance
ZthJA = f(tp) , Ta = 25 °C
Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board;
The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers
(2 x 70 μm Cu, 2 x 35 μm Cu). Device is dissipating 1 W power.
.
0
4
8
12
16
20
24
28
0,00001 0,0001 0,001 0,01 0,1 1 10 100 1000 10000
Zth_3104.emf
Z
thJA
[ K / W ]
t
p
[ s ]
Datasheet 10 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
5 Input and Power Stage
5.1 Input Circuit
Figure 5 shows the input circuit of the BTS3104SDR. The Zener Diode ZD protects the input circuit against ESD
pulses. The internal circuitry is powered via the input pin. During normal operation the Input is connected to the
Gate of the power MOSFET. During fault condition the device sinks the current IIN(fault) to give the fault information
back to the driving circuit. The current handling capability of the driving circuit does not influence the device
behavior as long as the supply current IIN is supplied.
Figure 5 Input Circuit
The following Figure shows the typical input threshold voltage of BTS3104SDR.
Figure 6 Typical Input Threshold Voltage Vinth = f(TJ); ID = 1.2mA, VD = VIN
The following Figure shows the typical transfer characteristic of BTS3104SDR.
Input .emf
Source
Z
D
IN
I
IN
Gate
Fault
condition
I
IN f
I
IS
Logic
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
-50 -25 0 25 50 75 100 125 150
T [°C]
V
IN(th)
[ V ]
Vinth_3104.emf
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
Datasheet 11 Rev. 1.0, 2009-12-06
Figure 7 Typical Transfer Characteristic ID = f(VIN); VD = 13.5 V, TJ(start) = 25 °C
5.1.1 Failure Feedback
During failure condition the BTS3104SDR sinks the increased current IIN(fault).
5.2 Power stage
5.2.1 Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage. The following
Figures show this dependencies for the typical on-state resistance RDS(on).
Temperature dependency of RDS(on) at 3 different input voltage conditions:
Figure 8 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 10 V
0
2
4
6
8
10
12
14
012345678910
I
D
[ A ]
V
IN
[ V ]
transferChart_3104.emf
0,00
0,05
0,10
0,15
0,20
0,25
-50 -25 0 25 50 75 100 125 150
R
DS(on)
[ Ω ]
T [ °C ]
typ.
rdson_10V_3104.emf
Datasheet 12 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
Figure 9 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5V
Figure 10 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3 V
0,05
0,10
0,15
0,20
0,25
-50 -25 0 25 50 75 100 125 150
R
DS(on)
[ Ω ]
T [ °C ]
typ.
rdson
_
5V
_
3104.emf
0,15
0,20
0,25
0,30
0,35
-50 -25 0 25 50 75 100 125 150
R
DS(on)
[ Ω ]
T [ °C ]
typ.
rdson_3V_3104.emf
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
Datasheet 13 Rev. 1.0, 2009-12-06
5.2.2 Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on.
Figure 11 shows the timing definition.
Figure 11 Definition of Power Output Timing for Resistive Load
IN [V]
0
10. 0
V
D
[V]
V
bb
Switching .emf
t
50 %
70 %
t
on
t
off
t
I
D
[A]
I
load
t
10 %
90 %
dV
ds
/dt
off
dV
ds
/dt
on
Datasheet 14 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
5.3 Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Input and Power Stage
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Input
5.3.1 Supply current from Input Pin IIN(nom) –1030μAVD = 0 V;
VIN = 10 V
5.3.2 Input current protection mode IIN(lim) – 100 300 μAVIN = 10 V;
TJ = 150 °C
5.3.3 Input threshold voltage VIN(th) 0.8 1.6 2 V VD = VIN;
ID = 1.2 mA
Power Stage
5.3.4 On-State Resistance RDS(on) – 104 – mΩTJ = 25 °C;
VIN = 10 V;
ID = 3 A
– 208 270 mΩTJ = 150 °C;
VIN = 10 V;
ID = 3 A
– 121 – mΩTJ = 25 °C;
VIN = 5 V;
ID = 3 A
– 235 323 mΩTJ = 150 °C;
VIN = 5 V;
ID = 3 A
– 220 – mΩ1) TJ = 25 °C;
VIN = 3 V;
ID = 3 A
– 325 450 mΩ1) TJ = 150 °C;
VIN = 3 V;
ID = 3 A
5.3.5 Nominal load current ID(nom) 2.0 2.5 – A 1)TJ < 150 °C;
TA = 105 °C;
VIN = 10 V;
VDS = 0.5 V
5.3.6 Zero input voltage drain current IDSS –2.56μAVD = 36 V;
VIN = 0 V;
TJ =-40 °C to 85 °C
–612μAVD = 36 V;
VIN = 0 V;
TJ =150 °C
HITFET - BTS3104SDR
Smart low side power switch
Input and Power Stage
Datasheet 15 Rev. 1.0, 2009-12-06
Switching (see Figure 11 for definition details)
5.3.7 Turn-on time ton – 50 100 μsVbb=13.5V, RL=4.7 Ω
TJ =-40 °C to 85 °C
60 120 TJ =150°C
– 50 120 μs1) Vbb=28V, RL=10 Ω
5.3.8 Turn-off time toff – 80 120 μsVbb=13.5V, RL=4.7 Ω
TJ =-40 °C to 85 °C
120 200 TJ =150°C
– 80 200 μs1) Vbb=28V, RL=10 Ω
5.3.9 Slew rate on -dVds/dton –0.71.5V/μsVbb=13.5V, RL=4.7 Ω
0.7 1.5 1) Vbb=28V, RL=10 Ω
5.3.10 Slew rate off dVds/dtoff –0.71.5V/μsVbb=13.5V, RL=4.7 Ω
0.7 1.5 1) Vbb=28V, RL=10 Ω
Inverse Diode
5.3.11 Inverse Diode forward voltage VD,inverted – -1.0 -1.5 V ID =-11 A
VIN = 0 V
1) Not subject to production test, calculated by RthJA and RDS(on).
Electrical Characteristics: Input and Power Stage (cont’d)
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Datasheet 16 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
6 Protection Functions
The device provides embedded protection functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operation.
6.1 Thermal Protection
The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this
a temperature sensor located in the Power MOSFET is used.
The BTS3104SDR has a thermal-restart function. The device will turn on again, if input is still high, after the
measured temperature has dropped below the thermal hysteresis.
The protective switch off can be reset by setting the input pin voltage to low. Then the internal logic is not supplied
anymore and the next time the voltage on the IN pin rises above the input threshold voltage, the device will switch
on, if the temperature is not above the over temperature threshold.
see Figure 12.
Figure 12 Error Signal via Input Current at Thermal Shutdown
IN
0
5V
t
Ther mal shutdown
t
T
J
T
JSD
I
IN
I
IN(nom)
t
0
I
IN(lim)
ΔT
JSD
Thermal_ fault _autorestart . emf
restart
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
Datasheet 17 Rev. 1.0, 2009-12-06
6.2 Overvoltage Protection
When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery
potential, because the inductance intends to continue driving the current.
Figure 13 Output Clamp
The BTS3104SDR is equipped with a voltage clamp mechanism that prevents the Drain-Source voltage to rise
above VD(Clamp) . See Figure 13 and Figure 14 for more details.
Figure 14 Switching an Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS3104SDR.
This energy can be calculated by the following equation:
Following equation simplifies under assumption of RL = 0
Figure 16 shows the inductance / current combination the BTS3104SDR can handle.
Source
Drain
OutputC lam p .emf
IN
0
5V
t
t
V
D
V
bat
InductiveLoad .emf
t
I
D
V
Clamp
Tur n off due to
over tem per atur e or short cir cuit
EV
D(Clamp)
Vbat V–D(Clamp)
RL
-----------------------------------------ln⋅1
RLIL
⋅
Vbat V–D(Clamp)
-----------------------------------------
–
⎝⎠
⎜⎟
⎛⎞
IL
+L
RL
------
⋅⋅=
E1
2
---LIL
21
Vbat
Vbat V–D(Clamp)
-----------------------------------------
–
⎝⎠
⎜⎟
⎛⎞
⋅=
Datasheet 18 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 7
Figure 15 Maximum load inductance for single pulse
L=
f
(IL), Tj(start)= 150 °C, Vbat= 24V
6.3 Short Circuit Protection
The condition short circuit is an overload condition of the device. If the current reaches the limitation value of ID(lim)
the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device
turns off.
The time from the beginning of current limitation until the over temperature switch off depends strongly on the
cooling conditions.
The device sinks higher current on IN pin during the protective switch off and switches back ON after the
BTS3104SDR cools down below the temperature hysteresis .
Figure 16 shows this behavior.
1,00
10,00
100,00
110
I
D
[ A ]
L [ mH ]
Max.
EAS_3104.emf
V
bat
= 24V
HITFET - BTS3104SDR
Smart low side power switch
Protection Functions
Datasheet 19 Rev. 1.0, 2009-12-06
Figure 16 Short circuit protection via current limitation and over temperature switch off
6.4 Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
Electrical Characteristics: Protection Functions
Unless otherwise specified: Tj = -40 °C to +150 °C , Vbat = 8.0 V to 36V
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Thermal Protection
6.4.1 Thermal shut down junction temperature TJSD 150 1751)
1) Not subject to production test, specified by design.
–°C–
6.4.2 Thermal hysteresis ΔTJSD –10–K1)
Overvoltage Protection
6.4.3 Drain clamp voltage VD(Clamp) 60 – 75 V VIN = 0 V; ID = 10 mA
Current limitation
6.4.4 Current limitation ID(lim) 61320AVIN = 10 V;
VD = 13.5V;
tmeasure = 200µs
V
IN
0
5V
t
T
J
T
JSD
I
IN
I
IN ( n o m )
0
I
IN (lim )
Short _circuit.emf
Tur n off due to over tem peratur e
I
D
I
D( li m )
Restart after short circuit turn off
Restar t into normal load condition
V
bat
/Z
sc
ΔT
JSD
t
t
t
Occurrence of Over cur r ent
or high ohm i c Short circuit
Datasheet 20 Rev. 1.0, 2009-12-06
HITFET - BTS3104SDR
Smart low side power switch
Package Outlines BTS3104SDR
7 Package Outlines BTS3104SDR
Figure 17 PG-TO252-3-11 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
5.4 ±0.1
-0.05
6.5
+0.15
A
±0.5
9.98
6.22 -0.2
1±0.1
±0.15
0.8
0.15 MAX.
±0.1
per side 0.75
2.28
4.57
+0.08
GPT0927
7
-0.04
0.5
2.3 -0.10
+0.05
B
0.51 MIN.
+0.08
-0.04
0.5
0...0.15
B
A0.25 M
0.1
All metal surfaces tin plate
d,
except area of cut.
3x
(5)
(4.24)
-0.01
+0.20
0.9
B
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
HITFET - BTS3104SDR
Smart low side power switch
Revision History
Datasheet 21 Rev. 1.0, 2009-12-06
8 Revision History
Version Date Changes
Rev. 1.0 2009-12-06 initial released data sheet
Edition 2009-12-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
