TLP620,TLP620−2,TLP620−4
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP620, TLP620−2, TLP620−4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
DIP.
• Collector−emitter voltage: 55V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Pin Configurations (top view)
TLP620
1
2
4
3
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
1
2
4
3
5
6
7
8
TLP620-2
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6, 8 : COLLECTOR
TLP620-4
1
2
4
3
5
6
7
8 9
10
11
12
13
14
15
16
1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA 11−5B2
Weight: 0.26 g (typ.)
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
TOSHIBA 11−20A3
Weight: 1.1 g (typ.)
Unit in mm
TLP620,TLP620−2,TLP620−4
2007-10-01
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Made In Japan Made In Thailand
UL recognized E67349 *1 E152349 *1
BSI approved 7426, 7427 *2 7426, 7427 *2
*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
• Isolation voltage: 5000Vrms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no.40009302
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note) When an EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”.
• Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol
TLP620 TLP620−2
TLP620−4
Unit
Forward current IF (RMS) 60 50 mA
Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
Power dissipation (1 circuit) PD 100 70 mW
Power dissipation derating ΔPD / °C −1.0 −0.7 mW / °C
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 circuit) PC 150 100 mW
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C) ΔPC / °C −1.5 −1.0 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsold 260 (10s) °C
Total package power dissipation PT 250 150 mW
Total package power dissipation
derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C −2.5 −1.5 mW / °C
Isolation voltage BVS 5000 (AC, 1 min., RH ≤ 60%) Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TLP620,TLP620−2,TLP620−4
2007-10-01
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Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF (RMS) ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25
― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = ±10mA 1.0 1.15 1.3 V
Forward current IF V
F = ±0.7V ― 2.5 20 μA
LED
Capacitance CT V = 0, f = 1MHz ― 60 ― pF
Collector−emitter
breakdown voltage V (BR) CEO IC = 0.5mA 55 ― ― V
Emitter−collector
breakdown voltage V (BR) ECO IE = 0.1mA 7 ― ― V
VCE = 24V ― 10 100 nA
Collector dark current ICEO
VCE = 24V, Ta = 85°C ― 2 50 μA
Detector
Capacitance
(collector to emitter) CCE V
CE = 0, f = 1MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 ― 600
Current transfer ratio IC / IF IF = ±5mA, VCE = 5V
Rank GB 100 ― 600
%
― 60 ―
Saturated CTR IC / IF (sat) IF = ±1mA, VCE = 0.4V
Rank GB 30 ― ―
%
IC = 2.4mA, IF = ±8mA ― ― 0.4
― 0.2 ―
Collector−emitter saturation
voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA
Rank GB ― ― 0.4
V
Off−state collector current IC (off) V
F = ± 0.7V, VCE = 24V ― 1 10 μA
CTR symmetry IC (ratio) IC (IF = −5mA) / IC (IF = +5mA) 0.33 1 3 ―
TLP620,TLP620−2,TLP620−4
2007-10-01
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance input to
output CS VS = 0, f = 1MHz ― 0.8 ― pF
Isolation resistance RS VS = 500V 1×1012 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― V
dc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr ― 2 ―
Fall time tf ― 3 ―
Turn−on time ton ― 3 ―
Turn−off time toff
VCC = 10V
IC = 2mA
RL = 100Ω
― 3 ―
μs
Turn−on time tON ― 2 ―
Storage time ts ― 15 ―
Turn−off time tOFF
RL = 1.9kΩ (Fig.1)
VCC = 5V, IF = ±16mA
― 25 ―
μs
Fig. 1 Switching time test circuit
IF
RL
VCC
VCE VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
TLP620,TLP620−2,TLP620−4
2007-10-01
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TLP620-2
TLP620-4 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (RMS) (mA)
100
0
−20
60
40
0 20 40 60 80 100
80
20
120
TLP620 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
240
−20
40
160
0 60 100 120
0
80
200
120
20 40 80
TLP620-2
TLP620-4 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
120
0
−20
40
0 40
100
80
60
20
20 60 80 100 120
TLP620 IFP – DR
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
3000
10
3 10−3 10−2 10−1 3
30
300
100
1000
500
50
3 3 100
Pulse width≦100μs
Ta = 25°C
TLP620-2
TLP620-4 IFP – DR
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
3000
1000
500
300
100
50
30
10
3 10
−
33 10
−
23 100
Pulse width≦100μs
Ta = 25°C
10−1 3
TLP620 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (RMS) (mA)
0
−20
80
40
20
0 20 40 60 80 100
60
100
120
TLP620,TLP620−2,TLP620−4
2007-10-01
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ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
1
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1 0.3 3 10 30
I
D – Ta
Ambient temperature Ta (°C)
Collector dark current ID (μA)
040 80 120 160
101
100
10
−
1
10
−
2
10
−
3
10
−
4
VCE = 24V
10
5
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
500
300
100
0 0.4 0.8 1.2 1.6 2.0
50
30
10
5
3
1
2.4
Pulse width≦10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
Collector current IC (mA)
I
C – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
80
60
40
20
0
0 2 4 8
6 10
Ta = 25°C
50mA
10mA
30mA
20mA
15mA
IF = 5mA
PC (MAX.)
I
F – VF
Forward voltage VF (V)
Forward current IF (mA)
100
50
30
10
5
3
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
0.5
0.3
Ta = 25°C
I
C – VCE
Collector-emitter voltage VCE (V)
25
20
15
10
0
00.2 0.4 0.6 0.8 1.0 1.2 1.4
5
Ta = 25°C
50mA
40mA
30mA
20mA
10mA
5mA
IF = 2mA
TLP620,TLP620−2,TLP620−4
2007-10-01
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V
F – IF
Forward voltage VF (V)
Forward voltage IF (mA)
60
−3
40
20
0
−20
−40
−2 −1 0 1 2 3
Ta = 25°C
500
300
50
30
5
0.3 13 10 30 100
Ta = 25°C
VCE = 5V
VCE = 0.4V
100
10
Sample B
Sample A
I
C / IF – IF
Forward current IF (mA)
Current transfer ratio
IC / IF (%)
I
C – VF
Forward voltage VF (V)
Collector current IC (mA)
100
0.03
0.8 1.3
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.01
0.9 1.0 1.1 1.2
Ta = 25°C
VCE = 0.4V
10
5
I
C – IF
Forward current IF (mA)
Collector current IC (mA)
100
0.5
0.3 100
50
30
10
5
3
1
0.3
0.1
0.05
0.03
1 3 10 30
Ta = 25°C
VCE = 5V
VCE = 0.4V
Sample B
Sample A
TLP620,TLP620−2,TLP620−4
2007-10-01
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I
C – Ta
Ambient temperature Ta (°C)
100
50
30
1
−20 0 20 40 80
100
10
5
3
0.5
0.3
0.1
60
VCE = 5V
IF = 25mA
10
5
1
0.5
Collector current IC (mA)
1000
500
300
30
100
50
10
1310 30 100
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
RL – Switching Time
Load resistance RL (kΩ)
Switching time (μs)
V
CE (sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE (sat) (V)
−20 020 40 60 80 100
0.20
0.16
0.12
0.04
0
0.24
0.08
IF = 5mA
IC = 1mA
IF
VCC
RL
VCE
RBE
IF
VCE
tON
ts
tOFF
0.5V
4.5V5V
ton, toff, ts Test condition
TLP620,TLP620−2,TLP620−4
2007-10-01
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
