MUR860S
MUR860S
VRSM
V
600
VRRM
V
600
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM
IFRM
TVJ=TVJM
TC=115oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
16
8
130 A
TVJ=45oC t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
TVJ=150oC t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
95
A
IFSM
TVJ=45oC t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
TVJ=150oC t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
A2s
I2t
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
oC
Ptot TC=25oC
Mdmounting torque
50
0.4...0.6
2
W
Nm
Weight g
C(TAB)
A=Anode, NC= No connection, TAB=Cathode
NC
A
CA Dimensions TO-263(D2PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
Ultra Fast Recovery Diodes
MUR860S
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
FEATURES
* International standard package
JEDEC TO-263
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
Symbol Test Conditions Characteristic Values
typ. max. Unit
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
20
10
1.5
uA
uA
mA
IR
IF=8A; TVJ=150oC
TVJ=25oC1.3
1.5 V
VF
RthJC
RthCK
RthJA
2.5
60 K/W
0.5
VR=350V; IF=8A; -diF/dt=64A/us; L<0.05uH; TVJ=100oC
trr IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC ns
IRM 2.8 A
35
VTO For power-loss calculations only 0.98 V
rT28.7 m
TVJ=TVJM
50
2.5
_
Ultra Fast Recovery Diodes
MUR860S
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
Ultra Fast Recovery Diodes
