© Freescale Semiconductor, Inc., 2005–2008. All rights reserved.
Freescale Semiconductor
Data Sheet: Technical Data
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Document Number: MCIMX31
Rev. 4.1, 11/2008
MCIMX31 and
MCIMX31L
Package Information
Plastic Package
Case 1581 14 x 14 mm, 0.5 mm Pitch
Case 1931 19 x 19 mm, 0.8 mm Pitch
Ordering Information
See Ta bl e 1 on page 3 for ordering information.
1 Introduction
The MCIMX31 and MCIMX31L multimedia
applications processors represent the next step in
low-power, high-performance application processors.
Unless otherwise specified, the material in this data sheet
is applicable to both the MCIMX31 and MCIMX31L
processors and referred to singularly throughout this
document as MCIMX31. The MCIMX31L does not
include a graphics processing unit (GPU).
Based on an ARM11™ microprocessor core, the
MCIMX31 provides the performance with low power
consumption required by modern digital devices such
as:
Feature-rich cellular phones
Portable media players and mobile gaming
machines
Personal digital assistants (PDAs) and Wireless PDAs
Portable DVD players
Digital cameras
The MCIMX31 takes advantage of the ARM1136JF-S™
core running at up to 532 MHz, and is optimized for
MCIMX31 and
MCIMX31L
Multimedia Applications
Processors
Contents
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering Information . . . . . . . . . . . . . . . . . . . . . 3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional Description and Application
Information . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
ARM11 Microprocessor Core . . . . . . . . . . . . . . 4
Module Inventory . . . . . . . . . . . . . . . . . . . . . . . 6
Signal Descriptions . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics . . . . . . . . . . . . . . . . 10
Chip-Level Conditions . . . . . . . . . . . . . . . . . . 10
Supply Power-Up/Power-Down Requirements
and Restrictions . . . . . . . . . . . . . . . . . . . . 18
Module-Level Electrical Specifications . . . . . . 21
Package Information and Pinout . . . . . . . . . 104
MAPBGA Production Package—
457 14 x 14 mm, 0.5 mm Pitch . . . . . . . . . . . 104
MAPBGA Production Package—
473 19 x 19 mm, 0.8 mm Pitch . . . . . . . . . . . 110
Ball Maps . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Product Differences . . . . . . . . . . . . . . . . . . . . 118
Product Documentation . . . . . . . . . . . . . . . . 119
Revision History . . . . . . . . . . . . . . . . . . . . . . . 120
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
2Freescale Semiconductor
Introduction
minimal power consumption using the most advanced techniques for power saving (DPTC, DVFS, power
gating, clock gating). With 90 nm technology and dual-Vt transistors (two threshold voltages), the
MCIMX31 provides the optimal performance versus leakage current balance.
The performance of the MCIMX31 is boosted by a multi-level cache system, and features peripheral
devices such as an MPEG-4 Hardware Encoder (VGA, 30 fps), an Autonomous Image Processing Unit, a
Vector Floating Point (VFP11) co-processor, and a RISC-based SDMA controller.
The MCIMX31 supports connections to various types of external memories, such as DDR, NAND Flash,
NOR Flash, SDRAM, and SRAM. The MCIMX31 can be connected to a variety of external devices using
technology, such as high-speed USB2.0 OTG, ATA, MMC/SDIO, and compact flash.
1.1 Features
The MCIMX31 is designed for the high-tier, mid-tier smartphone markets, and portable media players.
They provide low-power solutions for high-performance demanding multimedia and graphics
applications.
The MCIMX31 is built around the ARM11 MCU core and implemented in the 90 nm technology.
The systems include the following features:
Multimedia and floating-point hardware acceleration supporting:
MPEG-4 real-time encode of up to VGA at 30 fps
MPEG-4 real-time video post-processing of up to VGA at 30 fps
Video conference call of up to QCIF-30 fps (decoder in software), 128 kbps
Video streaming (playback) of up to VGA-30 fps, 384 kbps
3D graphics and other applications acceleration with the ARM® tightly-coupled Vector
Floating Point co-processor
On-the-fly video processing that reduces system memory load (for example, the
power-efficient viewfinder application with no involvement of either the memory system or the
ARM CPU)
Advanced power management
Dynamic voltage and frequency scaling
Multiple clock and power domains
Independent gating of power domains
Multiple communication and expansion ports including a fast parallel interface to an external
graphic accelerator (supporting major graphic accelerator vendors)
Security
Introduction
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 3
1.2 Ordering Information
Table 1 provides the ordering information for the MCIMX31.
1.2.1 Feature Differences Between Mask Sets
The following is a summary of differences between silicon Revision 2.0, mask set M91E, and previous
revisions of silicon. A complete list of these differences is given in Table 72.
Extended operating temperature range is available: –40°C to 85°C
Supply current information changes, as shown in Table 13 and Table 14
FUSE_VDD supply voltage is floated or grounded during read operation
No restriction on PLL versus core supply voltage
Operating frequency as shown in Table 8.
Table 1. Ordering Information
Part Number Silicon Revision1, 2, 3,4
1Information on reading the silicon revision register can be found in the IC Identification (IIM) chapter of the Reference Manual,
see Section 7, “Product Documentation.”
2Errata and fix information of the various mask sets can be found in the standard MCIMX31 Chip Errata, see Section 7, “Product
Documentation.”
3Changes in output buffer characteristics can be found in the I/O Setting Exceptions and Special Pad Descriptions table in the
Reference Manual, see Section 7, “Product Documentation.”
4JTAG functionality is not tested nor guaranteed at -40°C.
Device Mask Operating Temperature
Range (°C) Package5
5Case 1581 and 1931 are RoHS compliant, lead-free, MSL = 3, and solders at 260°C.
MCIMX31VKN5 1.15 2L38W and 3L38W 0 to 70
14 x 14 mm,
0.5 mm pitch,
MAPBGA-457,
Case 1581
MCIMX31LVKN5 1.15 2L38W and 3L38W 0 to 70
MCIMX31VKN5B 1.2 M45G 0 to 70
MCIMX31LVKN5B 1.2 M45G 0 to 70
MCIMX31VKN5C 2.0 M91E 0 to 70
14 x 14 mm,
0.5 mm pitch,
MAPBGA-457,
Case 1581
MCIMX31LVKN5C 2.0 M91E 0 to 70
MCIMX31CVKN5C 2.0 M91E –40 to 85
MCIMX31LCVKN5C 2.0 M91E –40 to 85
MCIMX31VMN5C 2.0 M91E 0 to 70 19 x 19 mm,
0.8 mm pitch,
Case 1931
MCIMX31LVMN5C 2.0 M91E 0 to 70
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
4Freescale Semiconductor
Functional Description and Application Information
1.3 Block Diagram
Figure 1 shows the MCIMX31 simplified interface block diagram.
Figure 1. MCIMX31 Simplified Interface Block Diagram
2 Functional Description and Application Information
2.1 ARM11 Microprocessor Core
The CPU of the MCIMX31 is the ARM1136JF-S core based on the ARM v6 architecture. It supports the
ARM Thumb® instruction sets, features Jazelle® technology (which enables direct execution of Java byte
codes), and a range of SIMD DSP instructions that operate on 16-bit or 8-bit data values in 32-bit registers.
The ARM1136JF-S processor core features:
Integer unit with integral EmbeddedICE logic
Eight-stage pipeline
Branch prediction with return stack
Low-interrupt latency
External Memory AP Peripherals
SRAM, PSRAM, SDRAM NAND Flash,
SmartMedia
GPU
*
Camera
MPEG-4
Baseband SD
Card
Fast
IrDA
USB
Image Processing Unit (IPU)
Parallel
Sensor (2)
Serial
LCD
Timers
AUDMUX
SSI (2)
UART (5)
GPT
PWM
EPIT (2)
RTC
GPIO
WDOG
1-WIRE
®
CSPI (3)
I
2
C (3)
FIR
KPP
CCM
ARM11
TM
Platform
I-Cache
D-Cache
L2-Cache
ROMPATCH
VFP
SDMA
USB-OTG
IIM
Expansion
SIM
ATA
PCMCIA/CF
Mem Stick (2)
SDHC (2) USB Host (2)
* GPU unavailable for i.MX31L
Inversion and Rotation
Camera Interface
Blending
Display/TV Ctl
Pre and Post Processing
Display (2)
NOR Flash DDR
WLAN
Bluetooth
Interface (EMI)
Power
Management
IC
PC
Card
PC
Card Host/Device
Mouse
Keyboard
Ta m p e r
Detection
Serial
EPROM
Video Encoder
8 x 8
Keypad
GPS
ATA
Hard Drive
ARM1136JF-S
TM
MAX
Memory
Internal
Security
RNGA
SCC
RTIC
Debug
ECT
SJC
ETM
Functional Description and Application Information
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 5
Instruction and data memory management units (MMUs), managed using micro TLB structures
backed by a unified main TLB
Instruction and data L1 caches, including a non-blocking data cache with Hit-Under-Miss
Virtually indexed/physically addressed L1 caches
64-bit interface to both L1 caches
Write buffer (bypassable)
High-speed Advanced Micro Bus Architecture (AMBA) L2 interface
Vector Floating Point co-processor (VFP) for 3D graphics and other floating-point applications
hardware acceleration
ETM and JTAG-based debug support
2.1.1 Memory System
The ARM1136JF-S complex includes 16 KB Instruction and 16 KB Data L1 caches. It connects to the
MCIMX31 L2 unified cache through 64-bit instruction (read-only), 64-bit data read/write (bi-directional),
and 64-bit data write interfaces.
The embedded 16K SRAM can be used for audio streaming data to avoid external memory accesses for
the low-power audio playback, for security, or for other applications. There is also a 32-KB ROM for
bootstrap code and other frequently-used code and data.
A ROM patch module provides the ability to patch the internal ROM. It can also initiate an external boot
by overriding the boot reset sequence by a jump to a configurable address.
Table 2 shows information about the MCIMX31 core in tabular form.
Table 2. MCIMX31 Core
Core
Acronym
Core
Name Brief Description Integrated Memory
Includes
ARM11 or
ARM1136
ARM1136
Platform
The ARM1136™ Platform consists of the ARM1136JF-S core, the ETM
real-time debug modules, a 6 x 5 multi-layer AHB crossbar switch (MAX), and
a Vector Floating Processor (VFP).
The MCIMX31 provides a high-performance ARM11 microprocessor core and
highly integrated system functions. The ARM Application Processor (AP) and
other subsystems address the needs of the personal, wireless, and portable
product market with integrated peripherals, advanced processor core, and
power management capabilities.
16 Kbyte Instruction
Cache
16 Kbyte Data
Cache
128 Kbyte L2 Cache
32 Kbyte ROM
16 Kbyte RAM
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
6Freescale Semiconductor
Functional Description and Application Information
2.2 Module Inventory
Table 3 shows an alphabetical listing of the modules in the multimedia applications processor. For
extended descriptions of the modules, see the reference manual. A cross-reference is provided to the
electrical specifications and timing information for each module with external signal connections.
Table 3. Digital and Analog Modules
Block
Mnemonic Block Name Functional
Grouping Brief Description Section/
Page
1-Wire® 1-Wire Interface Connectivity
Peripheral
The 1-Wire module provides bi-directional communication between
the ARM11 core and external 1-Wire devices.
4.3.4/26
ATA Advanced
Technology (AT)
Attachment
Connectivity
Peripheral
The ATA block is an AT attachment host interface. It is designed to
interface with IDE hard disc drives and ATAPI optical disc drives.
4.3.5/27
AUDMUX Digital Audio
Multiplexer
Multimedia
Peripheral
The AUDMUX interconnections allow multiple, simultaneous
audio/voice/data flows between the ports in point-to-point or
point-to-multipoint configurations.
4.3.6/36
CAMP Clock Amplifier
Module
Clock The CAMP converts a square wave/sinusoidal input into a rail-to-rail
square wave. The output of CAMP feeds the predivider.
4.3.3/25
CCM Clock Control
Module
Clock The CCM provides clock, reset, and power management control for
the MCIMX31.
CSPI Configurable
Serial Peripheral
Interface (x 3)
Connectivity
Peripheral
The CSPI is equipped with data FIFOs and is a master/slave
configurable serial peripheral interface module, capable of
interfacing to both SPI master and slave devices.
4.3.7/36
DPLL Digital Phase
Lock Loop
Clock The DPLLs produce high-frequency on-chip clocks with low
frequency and phase jitters.
Note: External clock sources provide the reference frequencies.
4.3.8/37
ECT Embedded
Cross Trigger
Debug The ECT is composed of three CTIs (Cross Trigger Interface) and
one CTM (Cross Trigger Matrix—key in the multi-core and
multi-peripheral debug strategy.
EMI External
Memory
Interface
Memory
Interface
(EMI)
The EMI includes
Multi-Master Memory Interface (M3IF)
Enhanced SDRAM Controller (ESDCTL)
NAND Flash Controller (NFC)
Wireless External Interface Module (WEIM)
4.3.9.3/46,
4.3.9.1/38,
4.3.9.2/41
EPIT Enhanced
Periodic
Interrupt Timer
Timer
Peripheral
The EPIT is a 32-bit “set and forget” timer which starts counting after
the EPIT is enabled by software. It is capable of providing precise
interrupts at regular intervals with minimal processor intervention.
ETM Embedded
Trace Macrocell
Debug/Trace The ETM (from ARM, Ltd.) supports real-time instruction and data
tracing by way of ETM auxiliary I/O port.
4.3.10/54
FIR Fast InfraRed
Interface
Connectivity
Peripheral
This FIR is capable of establishing a 0.576 Mbit/s, 1.152 Mbit/s or 4
Mbit/s half duplex link via a LED and IR detector. It supports 0.576
Mbit/s, 1.152 Mbit/s medium infrared (MIR) physical layer protocol
and 4Mbit/s fast infrared (FIR) physical layer protocol defined by
IrDA, Rev. 1.4.
4.3.11/55
Functional Description and Application Information
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 7
Fusebox Fusebox ROM The Fusebox is a ROM that is factory configured by Freescale. 4.3.12/55
See also
Ta bl e 1 1
GPIO General
Purpose I/O
Module
Pins The GPIO provides several groups of 32-bit bidirectional, general
purpose I/O. This peripheral provides dedicated general-purpose
signals that can be configured as either inputs or outputs.
GPT General
Purpose Timer
Timer
Peripheral
The GPT is a multipurpose module used to measure intervals or
generate periodic output.
GPU Graphics
Processing Unit
Multimedia
Peripheral
The GPU provides hardware acceleration for 2D and 3D graphics
algorithms.
I2C Inter IC
Communication
Connectivity
Peripheral
The I2C provides serial interface for controlling the Sensor Interface
and other external devices. Data rates of up to 100 Kbits/s are
supported.
4.3.13/56
IIM IC Identification
Module
ID The IIM provides an interface for reading device identification.
IPU Image
Processing Unit
Multimedia
Peripheral
The IPU processes video and graphics functions in the MCIMX31
and interfaces to video, still image sensors, and displays.
4.3.14/57,
4.3.15/59
KPP Keypad Port Connectivity
Peripheral
The KPP is used for keypad matrix scanning or as a general purpose
I/O. This peripheral simplifies the software task of scanning a keypad
matrix.
MPEG-4 MPEG-4 Video
Encoder
Multimedia
Peripherals
The MPEG-4 encoder accelerates video compression, following the
MPEG-4 standard
MSHC Memory Stick
Host Controller
Connectivity
Peripheral
The MSHC is placed in between the AIPS and the customer memory
stick to support data transfer from the MCIMX31 to the customer
memory stick.
4.3.16/84
PADIO Pads I/O Buffers and
Drivers
The PADIO serves as the interface between the internal modules and
the device's external connections.
4.3.1/22
PCMCIA PCM Connectivity
Peripheral
The PCMCIA Host Adapter provides the control logic for PCMCIA
socket interfaces.
4.3.17/86
PWM Pulse-Width
Modulator
Timer
Peripheral
The PWM has a 16-bit counter and is optimized to generate sound
from stored sample audio images. It can also generate tones.
4.3.18/88
RNGA Random
Number
Generator
Accelerator
Security The RNGA module is a digital integrated circuit capable of generating
32-bit random numbers. It is designed to comply with FIPS-140
standards for randomness and non-determinism.
RTC Real Time Clock Timer
Peripheral
The RTC module provides a current stamp of seconds, minutes,
hours, and days. Alarm and timer functions are also available for
programming. The RTC supports dates from the year 1980 to 2050.
RTIC Run-Time
Integrity
Checkers
Security The RTIC ensures the integrity of the peripheral memory contents
and assists with boot authentication.
Table 3. Digital and Analog Modules (continued)
Block
Mnemonic Block Name Functional
Grouping Brief Description Section/
Page
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
8Freescale Semiconductor
Functional Description and Application Information
SCC Security
Controller
Module
Security The SCC is a hardware component composed of two blocks—the
Secure RAM module, and the Security Monitor. The Secure RAM
provides a way of securely storing sensitive information.
SDHC Secured Digital
Host Controller
Connectivity
Peripheral
The SDHC controls the MMC (MultiMediaCard), SD (Secure Digital)
memory, and I/O cards by sending commands to cards and
performing data accesses to and from the cards.
4.3.19/89
SDMA Smart Direct
Memory Access
System
Control
Peripheral
The SDMA controller maximizes the system’s performance by
relieving the ARM core of the task of bulk data transfer from memory
to memory or between memory and on-chip peripherals.
SIM Subscriber
Identification
Module
Connectivity
Peripheral
The SIM interfaces to an external Subscriber Identification Card. It is
an asynchronous serial interface adapted for Smart Card
communication for e-commerce applications.
4.3.20/90
SJC Secure JTAG
Controller
Debug The SJC provides debug and test control with maximum security and
provides a flexible architecture for future derivatives or future
multi-cores architecture.
4.3.21/94
SSI Synchronous
Serial Interface
Multimedia
Peripheral
The SSI is a full-duplex, serial port that allows the device to
communicate with a variety of serial devices, such as standard
codecs, Digital Signal Processors (DSPs), microprocessors,
peripherals, and popular industry audio codecs that implement the
inter-IC sound bus standard (I2S) and Intel AC97 standard.
4.3.22/96
UART Universal
Asynchronous
Receiver/Trans
mitter
Connectivity
Peripheral
The UART provides serial communication capability with external
devices through an RS-232 cable or through use of external circuitry
that converts infrared signals to electrical signals (for reception) or
transforms electrical signals to signals that drive an infrared LED (for
transmission) to provide low speed IrDA compatibility.
USB Universal Serial
Bus—
2 Host
Controllers and
1 OTG
(On-The-Go)
Connectivity
Peripherals
USB Host 1 is designed to support transceiverless connection to
the on-board peripherals in Low Speed and Full Speed mode, and
connection to the ULPI (UTMI+ Low-Pin Count) and Legacy Full
Speed transceivers.
USB Host 2 is designed to support transceiverless connection to
the Cellular Modem Baseband Processor.
The USB-OTG controller offers HS/FS/LS capabilities in Host
mode and HS/FS in device mode. In Host mode, the controller
supports direct connection of a FS/LS device (without external
hub). In device (bypass) mode, the OTG port functions as gateway
between the Host 1 Port and the OTG transceiver.
4.3.23/104
WDOG Watchdog Timer
Module
Timer
Peripheral
The WDOG module protects against system failures by providing a
method for the system to recover from unexpected events or
programming errors.
Table 3. Digital and Analog Modules (continued)
Block
Mnemonic Block Name Functional
Grouping Brief Description Section/
Page
Signal Descriptions
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 9
3 Signal Descriptions
Signal descriptions are in the reference manual. Special signal considerations are listed following this
paragraph. The BGA ball assignment is in Section 5, “Package Information and Pinout.”
Special Signal Considerations:
Tamper detect (GPIO1_6)
Tamper detect logic is used to issue a security violation. This logic is activated if the tamper detect
input is asserted.
The tamper detect logic is disabled after reset. After enabling the logic, it is impossible to disable
it until the next reset. The GPR[16] bit functions as the tamper detect enable bit.
GPIO1_6 functions similarly to other I/O with GPIO capabilities regardless of the status of the
tamper detect enable bit. (For example, the GPIO1_6 can function as an input with GPIO
capabilities, such as sampling through PSR or generating interrupts.)
Power ready (GPIO1_5)
The power ready input, GPIO1_5, should be connected to an external power management IC power
ready output signal. If not used, GPIO1_5 must either be (a) externally pulled-up to NVCC1 or (b)
a no connect, internally pulled-up by enabling the on-chip pull-up resistor. GPIO1_5 is a dedicated
input and cannot be used as a general-purpose input/output.
SJC_MOD
SJC_MOD must be externally connected to GND for normal operation. Termination to GND
through an external pull-down resistor (such as 1 kΩ) is allowed, but the value should be much
smaller than the on-chip 100 kΩ pull-up.
CE_CONTROL
CE_CONTROL is a reserved input and must be externally tied to GND through a 1 kΩ resistor.
TTM_PAD
TTM_PAD is for Freescale factory use only. Control bits indicate pull-up/down disabled. However,
TTM_PAD is actually connected to an on-chip pull-down device. Users must either float this signal
or tie it to GND.
M_REQUEST and M_GRANT
These two signals are not utilized internally. The user should make no connection to these signals.
Clock Source Select (CLKSS)
The CLKSS is the input that selects the default reference clock source providing input to the DPLL.
To select CKIH, tie CLKSS to NVCC1. T o select CKIL, tie CLKSS to ground. After initialization,
the reference clock source can be changed (initial setting is overwritten) by programming the
PRCS bits in the CCMR.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
10 Freescale Semiconductor
Electrical Characteristics
4 Electrical Characteristics
This section provides the device-level and module-level electrical characteristics for the MCIMX31.
4.1 Chip-Level Conditions
This section provides the device-level electrical characteristics for the IC. See Table 4 for a quick reference
to the individual tables and sections.
CAUTION
Stresses beyond those listed under Table 5 may cause permanent damage to
the device. These are stress ratings only. Functional operation of the device
at these or any other conditions beyond those indicated under Table 8,
"Operating Ranges," on page 13 is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device
reliability.
Table 4. MCIMX31 Chip-Level Conditions
For these characteristics, … Topic appears …
Table 5, “Absolute Maximum Ratings” on page 10
Tab le 7, “Thermal Resistance Data—19 ×19 mm Package” on page 11
Table 8, “Operating Ranges” on page 13
Tab le 9, “Specific Operating Ranges for Silicon Revision 2.0” on page 14
Table 10, “Interface Frequency” on page 14
Section 4.1.1, “Supply Current Specifications” on page 16
Section 4.2, “Supply Power-Up/Power-Down Requirements and Restrictions” on page 19
Table 5. Absolute Maximum Ratings
Parameter Symbol Min Max Units
Supply Voltage (Core) QVCCmax –0.5 1.65 V
Supply Voltage (I/O) NVCCmax –0.5 3.3 V
Input Voltage Range VImax –0.5 NVCC +0.3 V
Storage Temperature Tstorage –40 125 oC
ESD Damage Immunity:
Vesd V
Human Body Model (HBM) 1500
Machine Model (MM) 200
Charge Device Model (CDM) 500
Offset voltage allowed in run mode between core supplies. Vcore_offset1
1The offset is the difference between all core voltage pair combinations of QVCC, QVCC1, and QVCC4.
—15mV
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 11
Table 6 provides the thermal resistance data for the 14 × 14 mm, 0.5 mm pitch package.
NOTES
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of
other components on the board, and board thermal resistance.
2. Per JEDEC JESD51-2 with the single layer board horizontal. Board meets JESD51-9
specification.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method
(MIL SPEC-883 Method 1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top
and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the
thermal characterization parameter is written as Psi-JT.
Table 7 provides the thermal resistance data for the 19 × 19 mm, 0.8 mm pitch package.
Table 6. Thermal Resistance Data—14 ×14 mm Package
Rating Board Symbol Value Unit Notes
Junction to Ambient (natural convection) Single layer board (1s) RθJA 56 °C/W 1, 2, 3
Junction to Ambient (natural convection) Four layer board (2s2p) RθJA 30 °C/W 1, 3
Junction to Ambient (@200 ft/min) Single layer board (1s) RθJMA 46 °C/W 1, 2, 3
Junction to Ambient (@200 ft/min) Four layer board (2s2p) RθJMA 26 °C/W 1, 3
Junction to Board RθJB 17 °C/W 1, 4
Junction to Case RθJC 10 °C/W 1, 5
Junction to Package Top (natural convection) ΨJT C/W1, 6
Table 7. Thermal Resistance Data—19 ×19 mm Package
Rating Board Symbol Value Unit Notes
Junction to Ambient (natural convection) Single layer board (1s) RθJA 46 °C/W 1, 2, 3
Junction to Ambient (natural convection) Four layer board (2s2p) RθJA 29 °C/W 1, 2, 3
Junction to Ambient (@200 ft/min) Single layer board (1s) RθJMA 38 °C/W 1, 2, 3
Junction to Ambient (@200 ft/min) Four layer board (2s2p) RθJMA 25 °C/W 1, 2, 3
Junction to Board RθJB 19 °C/W 1, 3
Junction to Case (Top) RθJCtop 10 °C/W 1, 4
Junction to Package Top (natural convection) ΨJT C/W1, 5
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
12 Freescale Semiconductor
Electrical Characteristics
NOTES
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of
other components on the board, and board thermal resistance.
2. Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6.
Thermal test board meets JEDEC specification for this package.
3. Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board
meets JEDEC specification for the specified package.
4. Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The
cold plate temperature is used for the case temperature. Reported value includes the thermal
resistance of the interface layer.
5. Thermal characterization parameter indicating the temperature difference between the package
top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the
thermal characterization parameter is written as Psi-JT.
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 13
Table 8 provides the operating ranges.
NOTE
The term NVCC in this section refers to the associated supply rail of an
input or output. The association is shown in the Signal Multiplexing chapter
of the reference manual.
CAUTION
NVCC6 and NVCC9 must be at the same voltage potential. These supplies
are connected together on-chip to optimize ESD damage immunity.
Table 8. Operating Ranges
Symbol Parameter Min Max Units
QVCC,
QVCC1,
QVCC4
Core Operating Voltage1,2,3
1Measured at package balls, including peripherals, ARM, and L2 cache supplies (QVCC, QVCC1, QVCC4, respectively).
2 The core voltage must be higher than 1.38V to avoid corrupted data during transfers from the USB HS. Please refer to Errata
file ENGcm02610 ID.
3 If the Core voltage is supplied by the MC13738, it will be 1.6 ± 0.05 V during the power-up sequence. This is allowed. After
power-up the voltage should be reduced to avoid operation in overdrive mode.
V
Silicon rev 1.15, 1.2, and 2.0 0 fARM 400 MHz, non-overdrive
0 fARM 400 MHz, overdrive4
0 fARM 532 MHz, overdrive4
4Supply voltage is considered “overdrive” for voltages above 1.47 V. Operation time in overdrive—whether switching or
not—must be limited to a cumulative duration of 1.25 years (10,950 hours) or less to sustain the maximum operating voltage
without significant device degradation—for example, 25% (average 6 hours out of 24 yours per day) duty cycle for 5-year rated
equipment. To tolerate the maximum operating overdrive voltage for 10 years, the device must have a duty cycle of 12.5% or
less in overdrive (for example 3 out of 24 hours per day). Below 1.47V, duty cycle restrictions may apply for equipment rated
above 5 years.
1.22
>1.47
1.55
1.47
1.65
1.65
State Retention Voltage5
5The SR voltage is applied to QVCC, QVCC1, and QVCC4 after the device is placed in SR mode. The Real-Time Clock (RTC)
is operational in State Retention (SR) mode.
0.95
NVCC1,
NVCC3–10
I/O Supply Voltage, except DDR6non-overdrive
overdrive7
6Overshoot and undershoot conditions (transitions above NVCC and below GND) on I/O must be held below 0.6 V, and the
duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
1.75
>3.1
3.1
3.3
V
NVCC2,
NVCC21,
NVCC22
I/O Supply Voltage, DDR only 1.75 1.95 V
FVCC, MVCC,
SVCC, UVCC
PLL (Phase-Locked Loop) and FPM (Frequency Pre-multiplier) Supply Voltage8
non-overdrive
overdrive4
1.3
>1.47
1.47
1.6
V
IOQVDD On-device Level Shifter Supply Voltage 1.6 1.9 V
FUSE_VDD Fusebox read Supply Voltage9, 10 1.65 1.95 V
Fusebox write (program) Supply Voltage11 3.0 3.3 V
TAOperating Ambient Temperature Range12 070
oC
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
14 Freescale Semiconductor
Electrical Characteristics
Table 10 provides information for interface frequency limits. For more details about clocks characteristics,
see Section 4.3.8, “DPLL Electrical Specifications,” and Section 4.3.3, “Clock Amplifier Module (CAMP)
Electrical Characteristics.”
Table 11 shows the fusebox supply current parameters.
7Supply voltage is considered “overdrive” for voltages above 3.1 V. Operation time in overdrive—whether switching or
not—must be limited to a cumulative duration of 1 year (8,760 hours) or less to sustain the maximum operating voltage without
significant device degradation—for example, 20% (average 4.8 hours out of 24 hours per day) duty cycle for 5-year rated
equipment. Operation at 3.3 V that exceeds a cumulative 3,504 hours may cause non-operation whenever supply voltage is
reduced to 1.8 V; degradation may render the device too slow or inoperable. Below 3.1 V, duty cycle restrictions may apply for
equipment rated above 5 years.
8For normal operating conditions, PLLs’ and core supplies must maintain the following relation: PLL Core – 100 mV. In other
words, for a 1.6 V core supply, PLL supplies must be set to 1.5 V or higher. This restriction is no longer necessary on mask
set M91E. PLL supplies may be set independently of core supply. PLL voltage must not be altered after power up, otherwise
the PLL will be unstable and lose lock. To minimize inducing noise on the PLL supply line, source the voltage from a low-noise,
dedicated supply. PLL parameters in Table 31, "DPLL Specifications," on page 37, are guaranteed over the entire specified
voltage range.
9Fusebox read supply voltage applies to silicon Revisions 1.2 and previous.
10 In read mode, FUSE_VDD can be floated or grounded for mask set M91E (silicon Revision 2.0).
11 Fuses might be inadvertently blown if written to while the voltage is below this minimum.
12 The temperature range given is for the consumer version. Please refer to Tabl e 1 for extended temperature range offerings
and the associated part numbers.
Table 9. Specific Operating Ranges for Silicon Revision 2.0
Symbol Parameter Min Max Units
FUSE_VDD Fusebox read Supply Voltage1
1In read mode, FUSE_VDD should be floated or grounded.
—— V
Fusebox write (program) Supply Voltage2
2Fuses might be inadvertently blown if written to while the voltage is below the minimum.
3.0 3.3 V
Table 10. Interface Frequency
ID Parameter Symbol Min Typ Max Units
1 JTAG TCK Frequency fJTAG DC 5 10 MHz
2 CKIL Frequency1
1CKIL must be driven by an external clock source to ensure proper start-up and operation of the device. CKIL is needed to clock
the internal reset synchronizer, the watchdog, and the real-time clock.
fCKIL 32 32.768 38.4 kHz
3 CKIH Frequency2
2DPTC functionality, specifically the voltage/frequency relation table, is dependent on CKIH frequency. At the time of publication,
standard tables used by Freescale OSs provided for a CKIH frequency of 26 MHz only. Any deviation from this frequency
requires an update to the OS. For more details, refer to the particular OS user's guide documentation.
fCKIH 15 26 75 MHz
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 15
Table 11. Fusebox Supply Current Parameters
Ref. Num Description Symbol Minimum Typical Maximum Units
1 eFuse Program Current.1
Current to program one eFuse bit: efuse_pgm = 3.0 V
1The current Iprogram is during program time (tprogram).
Iprogram —3560mA
2 eFuse Read Current2
Current to read an 8-bit eFuse word
vdd_fusebox = 1.875 V
2The current Iread is present for approximately 50 ns of the read access to the 8-bit word, and only applies to Silicon Rev. 1.2
and previous.
Iread —5 8mA
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
16 Freescale Semiconductor
Electrical Characteristics
4.1.1 Supply Current Specifications
Table 12 shows the core current consumption for 0°C to 70°C for Silicon Revision 1.2 and previous for the
MCIMX31.
Table 12. Current Consumption for 0°C to 70°C1, 2 for Silicon Revision 1.2 and Previous
1Typical column: TA = 25°C
2Maximum column: TA = 70°C
Mode Conditions
QVCC
(Peripheral)
QVCC1
(ARM)
QVCC4
(L2)
FVCC + MVCC
+ SVCC + UVCC
(PLL) Unit
Typ Max Typ Max Typ Max Typ Max
State
Retention
QVCC and QVCC1 = 0.95 V
L2 caches are power gated (QVCC4 = 0 V)
All PLLs are off, VCC = 1.4 V
ARM is in well bias
•FPM is off
32 kHz input is on
CKIH input is off
CAMP is off
TCK input is off
All modules are off
No external resistive loads
RNGA oscillator is off
0.80 0.50 0.04 mA
Wait QVCC,QVCC1, and QVCC4 = 1.22 V
ARM is in wait for interrupt mode
MAX is active
L2 cache is stopped but powered
MCU PLL is on (532 MHz), VCC = 1.4 V
USB PLL and SPLL are off, VCC = 1.4 V
•FPM is on
CKIH input is on
CAMP is on
32 kHz input is on
All clocks are gated off
All modules are off
(by programming CGR[2:0] registers)
RNGA oscillator is off
No external resistive loads
6.00 3.00 0.04 3.50 mA
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 17
Table 13 shows the core current consumption for –40°C to 85°C for Silicon Revision 2.0 for the
MCIMX31.
Table 13. Current Consumption for –40°C to 85°C1, 2 for Silicon Revision 2.0
1Typical column: TA = 25°C
2Maximum column: TA = 85°C
Mode Conditions
QVCC
(Peripheral)
QVCC1
(ARM)
QVCC4
(L2)
FVCC + MVCC
+ SVCC + UVCC
(PLL) Unit
Typ Max Typ Max Typ Max Typ Max
Deep
Sleep
QVCC = 0.95 V
ARM and L2 caches are power gated
(QVCC1 = QVCC4 = 0 V)
All PLLs are off, VCC = 1.4 V
ARM is in well bias
•FPM is off
32 kHz input is on
CKIH input is off
CAMP is off
TCK input is off
All modules are off
No external resistive loads
RNGA oscillator is off
0.16 5.50 0.02 0.10 mA
State
Retention
QVCC and QVCC1 = 0.95 V
L2 caches are power gated (QVCC4 = 0 V)
All PLLs are off, VCC = 1.4 V
ARM is in well bias
•FPM is off
32 kHz input is on
CKIH input is off
CAMP is off
TCK input is off
All modules are off
No external resistive loads
RNGA oscillator is off
0.16 5.50 0.07 2.20 0.02 0.10 mA
Wait QVCC,QVCC1, and QVCC4 = 1.22 V
ARM is in wait for interrupt mode
MAX is active
L2 cache is stopped but powered
MCU PLL is on (532 MHz), VCC = 1.4 V
USB PLL and SPLL are off, VCC = 1.4 V
•FPM is on
CKIH input is on
CAMP is on
32 kHz input is on
All clocks are gated off
All modules are off
(by programming CGR[2:0] registers)
RNGA oscillator is off
No external resistive loads
6.00 15.00 2.20 25.00 0.03 0.29 3.60 4.40 mA
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
18 Freescale Semiconductor
Electrical Characteristics
Table 14 shows the core current consumption for 0°C to 70°C for Silicon Revision 2.0 for the MCIMX31.
Table 14. Current Consumption for 0°C to 70°C1, 2 for Silicon Revision 2.0
1Typical column: TA = 25°C
2Maximum column: TA = 70°C
Mode Conditions
QVCC
(Peripheral)
QVCC1
(ARM)
QVCC4
(L2)
FVCC, +MVCC,
+SVCC, +UVCC
(PLL) Unit
Typ Max Typ Max Typ Max Typ Max
Deep
Sleep
•QVCC = 0.95V
ARM and L2 caches are power gated
(QVCC1 2= QVCC4 = 0 V)
All PLLs are off, VCC = 1.4 V
ARM is in well bias
FPM is off
32 kHz input is on
CKIH input is off
CAMP is off
TCK input is off
All modules are off
No external resistive loads
RNGA oscillator is off
0.16 2.50 0.02 0.10 mA
State
Retention
QVCC and QVCC1 = 0.95 V
L2 caches are power gated (QVCC4 = 0 V)
All PLLs are off, VCC = 1.4 V
ARM is in well bias
FPM is off
32 kHz input is on
CKIH input is off
CAMP is off
TCK input is off
All modules are off
No external resistive loads
RNGA oscillator is off
0.16 2.50 0.07 1.60 0.02 0.10 mA
Wait QVCC,QVCC1, and QVCC4 = 1.22 V
ARM is in wait for interrupt mode
MAX is active
L2 cache is stopped but powered
MCU PLL is on (532 MHz), VCC = 1.4 V
USB PLL and SPLL are off, VCC = 1.4 V
FPM is on
CKIH input is on
CAMP is on
32 kHz input is on
All clocks are gated off
All modules are off
(by programming CGR[2:0] registers)
RNGA oscillator is off
No external resistive loads
6.00 13.00 2.20 16.00 0.03 0.17 3.60 4.40 mA
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 19
4.2 Supply Power-Up/Power-Down Requirements and Restrictions
Any MCIMX31 board design must comply with the power-up and power-down sequence guidelines as
described in this section to guarantee reliable operation of the device. Any deviation from these sequences
may result in any or all of the following situations:
Cause excessive current during power up phase
Prevent the device from booting
Cause irreversible damage to the MCIMX31 (worst-case scenario)
4.2.1 Powering Up
The Power On Reset (POR) pin must be kept asserted (low) throughout the power up sequence. Power up
logic must guarantee that all power sources reach their target values prior to the release (de-assertion) of
POR. Figure 2 shows the power-up sequence for silicon Revisions 1.2 and previous. Figure 3 and Figure 4
show the power-up sequence for silicon Revision 2.0.
NOTE
Stages need to be performed in the order shown; however, within each stage,
supplies can be powered up in any order. For example, supplies IOQVDD,
NVCC1, and NVCC3 through NVCC10 do not need to be powered up in the
order shown.
CAUTION
NVCC6 and NVCC9 must be at the same voltage potential. These supplies
are connected together on-chip to optimize ESD damage immunity.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
20 Freescale Semiconductor
Electrical Characteristics
Figure 2. Power-Up Sequence for Silicon Revisions 1.2 and Previous
4.2.1.1 Power-Up Sequence for Silicon Revision 2
Silicon revision 2.0 offers two options for power-up sequencing. Option 1 is backwards compatible with
silicon revision 1.2 and earlier versions of the IC. It should be noted that using option 1 on silicon Rev. 2.0
introduces a slight increase in current drain on IOQVDD when IOQVDD is raised before NVCC21. The
expected resulting increase is in the range of 3 mA to 5 mA, which does not pose a risk to the IC.
Option 2 is an alternative power-up sequence that allows the powering up of NVCC2, NVCC21, NVCC22
with IOQVDD, NVCC1, and NVCC3-10 without producing a current drain increase on IOQVDD.
These two power-up options on the 2.0 silicon allow the user to select the optimum power-up sequence for
their application.
Release
POR
QVCC, QVCC1, QVCC4
IOQVDD, NVCC1, NVCC3–10
FVCC, MVCC,
SVCC, UVCC
NVCC2, NVCC21, NVCC22
FUSE_VDD
Hold POR Asserted
1
1
1, 2
1
1
1, 3
Notes:
1The board design must guarantee that supplies reach 90% level before transition
to the next state, using Power Management IC or other means.
2The NVCC1 supply must not precede IOQVDD by more than 0.2 V until IOQVDD
has reached 1.5 V. If IOQVDD is powered up first, there are no restrictions.
3It is allowable for FVCC, MVCC, SVCC, and UVCC to be up after FUSE_VDD.
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 21
Figure 3. Option 1 Power-Up Sequence (Silicon Revision 2.0)
Figure 4. Option 2 Power-Up Sequence (Silicon Revision 2.0)
Release
POR
QVCC, QVCC1, QVCC4
IOQVDD, NVCC1, NVCC3–10
NVCC2, NVCC21, NVCC22
Hold POR Asserted
1
1, 2
1, 3, 5
Notes:
1The board design must guarantee that supplies reach
90% level before transition to the next state, using Power
Management IC or other means.
2The NVCC1 supply must not precede IOQVDD by more
than 0.2 V until IOQVDD has reached 1.5 V. If IOQVDD
is powered up first, there are no restrictions.
3The parallel paths in the flow indicate that supply group
NVCC2, NVCC21, and NVCC22, and supply group
FVCC, MVCC, SVCC, and UVCC ramp-ups are
independent. Note that this power-up sequence is
backward compatible to Silicon Revs. 1.15 and 1.2,
because NVCC2x ramp-up proceeding PLL supplies is
allowed.
4Unlike the power-up sequence for Silicon Revision 1.2,
FUSE_VDD should not be driven on power-up for Silicon
Revision 2.0. This supply is dedicated for fuse burning
(programming), and should not be driven upon boot-up.
5Raising IOQVDD before NVCC21 produces a slight
increase in current drain on IOQVDD of approximately
3–5 mA. The current increase will not damage the IC.
Refer to Errata ID TLSbo91750 for details.
FVCC, MVCC, SVCC, UVCC
1,3
4
Release
POR
QVCC, QVCC1, QVCC4
IOQVDD, NVCC1, NVCC3–10, NVCC2, NVCC21, NVCC22
Hold POR Asserted
1
1, 2,3
Notes:
1The board design must guarantee that supplies reach
90% level before transition to the next state, using Power
Management IC or other means.
2The NVCC1 supply must not precede IOQVDD by more
than 0.2 V until IOQVDD has reached 1.5 V. If IOQVDD
is powered up first, there are no restrictions.
3Raising NVCC2, NVCC21, and NVCC22 at the same
time as IOQVDD does not produce the slight increase in
current drain on IOQVDD (as described in Figure 3,
Note 5).
4Unlike the power-up sequence for Silicon Revision 1.2,
FUSE_VDD should not be driven on power-up for Silicon
Revision 2.0. This supply is dedicated for fuse burning
(programming), and should not be driven upon boot-up.
FVCC, MVCC, SVCC, UVCC
1
4
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
22 Freescale Semiconductor
Electrical Characteristics
4.2.2 Powering Down
The power-down sequence prior to silicon Revision 2.0 should be completed as follows:
1. Lower the FUSE_VDD supply (when in write mode).
2. Lower the remaining supplies.
For silicon revisions beginning with Revision 2.0 there is no special requirements for power down
sequence.
4.3 Module-Level Electrical Specifications
This section contains the MCIMX31 electrical information including timing specifications, arranged in
alphabetical order by module name.
4.3.1 I/O Pad (PADIO) Electrical Specifications
This section specifies the AC/DC characterization of functional I/O of the MCIMX31. There are two main
types of I/O: regular and DDR. In this document, the “Regular” type is referred to as GPIO.
4.3.1.1 DC Electrical Characteristics
The MCIMX31 I/O parameters appear in Table 15 for GPIO. See Table 8 for temperature and supply
voltage ranges.
NOTE
The term NVCC in this section refers to the associated supply rail of an
input or output. The association is shown in the Signal Multiplexing chapter
of the reference manual. NVCC for Table 15 refers to NVCC1 and
NVCC3–10; QVCC refers to QVCC, QVCC1, and QVCC4.
Table 15. GPIO DC Electrical Parameters
Parameter Symbol Test Conditions Min Typ Max Units
High-level output voltage VOH IOH = –1 mA NVCC –0.15 V
IOH = specified Drive 0.8*NVCC V
Low-level output voltage VOL IOL = 1 mA 0.15 V
IOL = specified Drive 0.2*NVCC V
High-level output current, slow slew rate IOH_S VOH=0.8*NVCC
Std Drive
High Drive
Max Drive
–2
–4
–8
——mA
High-level output current, fast slew rate IOH_F VOH=0.8*NVCC
Std Drive
High Drive
Max Drive
–4
–6
–8
——mA
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 23
The MCIMX31 I/O parameters appear in Table 16 for DDR (Double Data Rate). See Table 8, "Operating
Ranges," on page 13 for temperature and supply voltage ranges.
NOTE
NVCC for Table 16 refers to NVCC2, NVCC21, and NVCC22.
Low-level output current, slow slew rate IOL_S VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
2
4
8
——mA
Low-level output current, fast slew rate IOL_F VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
4
6
8
——mA
High-Level DC input voltage VIH 0.7*NVCC NVCC V
Low-Level DC input voltage VIL —00.3*QVCCV
Input Hysteresis VHYS Hysteresis enabled 0.25 V
Schmitt trigger VT+ VT + Hysteresis enabled 0.5*QVCC V
Schmitt trigger VT– VT Hysteresis enabled 0.5*QVCC V
Pull-up resistor (100 kΩ PU) RPU 100
kΩ
Pull-down resistor (100 kΩ PD) RPD 100
Input current (no PU/PD) IIN VI = NVCC or GND ±1μA
Input current (100 kΩ PU) IIN VI = 0
VI = NVCC
——25
0.1
μA
μA
Input current (100 kΩ PD) IIN VI = 0
VI = NVCC
0.25
28
μA
μA
Tri-state leakage current IOZ VI = NVCC or GND
I/O = High Z
——±2μA
Table 16. DDR (Double Data Rate) I/O DC Electrical Parameters
Parameter Symbol Test Conditions Min Typ Max Units
High-level output voltage VOH IOH = –1 mA NVCC –0.12 V
IOH = specified Drive 0.8*NVCC V
Low-level output voltage VOL IOL = 1 mA 0.08 V
IOL = specified Drive 0.2*NVCC V
High-level output current IOH VOH=0.8*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
–3.6
–7.2
–10.8
–14.4
——mA
Table 15. GPIO DC Electrical Parameters (continued)
Parameter Symbol Test Conditions Min Typ Max Units
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
24 Freescale Semiconductor
Electrical Characteristics
4.3.2 AC Electrical Characteristics
Figure 5 depicts the load circuit for outputs. Figure 6 depicts the output transition time waveform. The
range of operating conditions appears in Table 17 for slow general I/O, Table 18 for fast general I/O, and
Table 19 for DDR I/O (unless otherwise noted).
Figure 5. Load Circuit for Output
Figure 6. Output Transition Time Waveform
Low-level output current IOL VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
3.6
7.2
10.8
14.4
——mA
High-Level DC input voltage VIH 0.7*NVCC NVCC NVCC+0.3 V
Low-Level DC input voltage VIL –0.3 0 0.3*NVCC V
Tri-state leakage current IOZ VI = NVCC or GND
I/O = High Z
——±2μA
1Use of DDR Drive can result in excessive overshoot and ringing.
Table 17. AC Electrical Characteristics of Slow1 General I/O
1Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
ID Parameter Symbol Test
Condition Min Typ Max Units
PA1 Output Transition Times (Max Drive) tpr 25 pF
50 pF
0.92
1.5
1.95
2.98
3.17
4.75
ns
Output Transition Times (High Drive) tpr 25 pF
50 pF
1.52
2.75
—4.81
8.42
ns
Output Transition Times (Std Drive) tpr 25 pF
50 pF
2.79
5.39
—8.56
16.43
ns
Table 16. DDR (Double Data Rate) I/O DC Electrical Parameters (continued)
Parameter Symbol Test Conditions Min Typ Max Units
Tes t Po in t
From Output
Under Test
CL
CL includes package, probe and fixture capacitance
0V
NVCC
20%
80% 80%
20%
PA1 PA 1
Output (at I/O)
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 25
4.3.3 Clock Amplifier Module (CAMP) Electrical Characteristics
This section outlines the Clock Amplifier Module (CAMP) specific electrical characteristics. Table 20
shows clock amplifier electrical characteristics.
Table 18. AC Electrical Characteristics of Fast1 General I/O 2
1Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
2Use of GPIO in fast mode with the associated NVCC > 1.95 V can result in excessive overshoot and ringing.
ID Parameter Symbol Test
Condition Min Typ Max Units
PA1 Output Transition Times (Max Drive) tpr 25 pF
50 pF
0.68
1.34
1.33
2.6
2.07
4.06
ns
Output Transition Times (High Drive) tpr 25 pF
50 pF
.91
1.79
1.77
3.47
2.74
5.41
ns
Output Transition Times (Std Drive) tpr 25 pF
50 pF
1.36
2.68
2.64
5.19
4.12
8.11
ns
Table 19. AC Electrical Characteristics of DDR I/O
ID Parameter Symbol Test
Condition Min Typ Max Units
PA1 Output Transition Times (DDR Drive)1
1Use of DDR Drive can result in excessive overshoot and ringing.
tpr 25 pF
50 pF
0.51
0.97
0.82
1.58
1.28
2.46
ns
Output Transition Times (Max Drive) tpr 25 pF
50 pF
0.67
1.29
1.08
2.1
1.69
3.27
ns
Output Transition Times (High Drive) tpr 25 pF
50 pF
.99
1.93
1.61
3.13
2.51
4.89
ns
Output Transition Times (Std Drive) tpr 25 pF
50 pF
1.96
3.82
3.19
6.24
4.99
9.73
ns
Table 20. Clock Amplifier Electrical Characteristics for CKIH Input
Parameter Min Typ Max Units
Input Frequency 15 75 MHz
VIL (for square wave input) 0 0.3 V
VIH (for square wave input) (VDD 1
– 0.25)
1VDD is the supply voltage of CAMP. See reference manual.
—3V
Sinusoidal Input Amplitude 0.4 2
2This value of the sinusoidal input will be measured through characterization.
—VDDVp-p
Duty Cycle 45 50 55 %
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
26 Freescale Semiconductor
Electrical Characteristics
4.3.4 1-Wire Electrical Specifications
Figure 7 depicts the RPP timing, and Table 21 lists the RPP timing parameters.
Figure 7. Reset and Presence Pulses (RPP) Timing Diagram
Figure 8 depicts Write 0 Sequence timing, and Table 22 lists the timing parameters.
Figure 8. Write 0 Sequence Timing Diagram
Figure 9 depicts Write 1 Sequence timing, Figure 10 depicts the Read Sequence timing, and Table 23 lists
the timing parameters.
Table 21. RPP Sequence Delay Comparisons Timing Parameters
ID Parameters Symbol Min Typ Max Units
OW1 Reset Time Low tRSTL 480 511 µs
OW2 Presence Detect High tPDH 15 60 µs
OW3 Presence Detect Low tPDL 60 240 µs
OW4 Reset Time High tRSTH 480 512 µs
Table 22. WR0 Sequence Timing Parameters
ID Parameter Symbol Min Typ Max Units
OW5 Write 0 Low Time tWR0_low 60 100 120 µs
OW6 Transmission Time Slot tSLOT OW5 117 120 µs
1-Wire bus
DS2502 Tx
“Presence Pulse”
(BATT_LINE)
OWIRE Tx
“Reset Pulse”
OW1
OW2
OW3
OW4
OW5
OW6
1-Wire bus
(BATT_LINE)
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 27
Figure 9. Write 1 Sequence Timing Diagram
Figure 10. Read Sequence Timing Diagram
4.3.5 ATA Electrical Specifications (ATA Bus, Bus Buffers)
This section discusses ATA parameters. For a detailed description, refer to the ATA specification.
The user needs to use level shifters for 3.3 Volt or 5.0 Volt compatibility on the ATA interface.
The use of bus buffers introduces delay on the bus and introduces skew between signal lines. These factors
make it difficult to operate the bus at the highest speed (UDMA-5) when bus buffers are used. If fast
UDMA mode operation is needed, this may not be compatible with bus buffers.
Another area of attention is the slew rate limit imposed by the ATA specification on the ATA bus.
According to this limit, any signal driven on the bus should have a slew rate between 0.4 and 1.2 V/ns with
a 40 pF load. Not many vendors of bus buffers specify slew rate of the outgoing signals.
When bus buffers are used, the ata_data bus buffer is special. This is a bidirectional bus buffer, so a
direction control signal is needed. This direction control signal is ata_buffer_en. When its high, the bus
should drive from host to device. When its low, the bus should drive from device to host. Steering of the
signal is such that contention on the host and device tri-state busses is always avoided.
Table 23. WR1/RD Timing Parameters
ID Parameter Symbol Min Typ Max Units
OW7 Write 1 / Read Low Time tLOW1 1 5 15 µs
OW8 Transmission Time Slot tSLOT 60 117 120 µs
OW9 Release Time tRELEASE 15 45 µs
OW7
OW8
1-Wire bus
(BATT_LINE)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
28 Freescale Semiconductor
Electrical Characteristics
4.3.5.1 Timing Parameters
In the timing equations, some timing parameters are used. These parameters depend on the implementation
of the ATA interface on silicon, the bus buffer used, the cable delay and cable skew. Table 24 shows ATA
timing parameters.
Table 24. ATA Timing Parameters
Name Description Value/
Contributing Factor1
1Values provided where applicable.
T Bus clock period (ipg_clk_ata) peripheral clock
frequency
ti_ds Set-up time ata_data to ata_iordy edge (UDMA-in only)
UDMA0
UDMA1
UDMA2, UDMA3
UDMA4
UDMA5
15 ns
10 ns
7 ns
5 ns
4 ns
ti_dh Hold time ata_iordy edge to ata_data (UDMA-in only)
UDMA0, UDMA1, UDMA2, UDMA3, UDMA4
UDMA5
5.0 ns
4.6 ns
tco Propagation delay bus clock L-to-H to
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack, ata_data,
ata_buffer_en
12.0 ns
tsu Set-up time ata_data to bus clock L-to-H 8.5 ns
tsui Set-up time ata_iordy to bus clock H-to-L 8.5 ns
thi Hold time ata_iordy to bus clock H to L 2.5 ns
tskew1 Max difference in propagation delay bus clock L-to-H to any of following signals
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack, ata_data
(write), ata_buffer_en
7ns
tskew2 Max difference in buffer propagation delay for any of following signals
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack, ata_data
(write), ata_buffer_en
transceiver
tskew3 Max difference in buffer propagation delay for any of following signals ata_iordy, ata_data
(read)
transceiver
tbuf Max buffer propagation delay transceiver
tcable1 Cable propagation delay for ata_data cable
tcable2 Cable propagation delay for control signals ata_dior, ata_diow, ata_iordy, ata_dmack cable
tskew4 Max difference in cable propagation delay between ata_iordy and ata_data (read) cable
tskew5 Max difference in cable propagation delay between (ata_dior, ata_diow, ata_dmack) and
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_data(write)
cable
tskew6 Max difference in cable propagation delay without accounting for ground bounce cable
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 29
4.3.5.2 PIO Mode Timing
Figure 11 shows timing for PIO read, and Table 25 lists the timing parameters for PIO read.
Figure 11. PIO Read Timing Diagram
Figure 12 shows timing for PIO write, and Table 26 lists the timing parameters for PIO write.
Table 25. PIO Read Timing Parameters
ATA
Parameter
Parameter
from Figure 11 Value Controlling
Variable
t1 t1 t1 (min) = time_1 * T – (tskew1 + tskew2 + tskew5) time_1
t2 t2r t2 min) = time_2r * T – (tskew1 + tskew2 + tskew5) time_2r
t9 t9 t9 (min) = time_9 * T – (tskew1 + tskew2 + tskew6) time_3
t5 t5 t5 (min) = tco + tsu + tbuf + tbuf + tcable1 + tcable2 If not met, increase
time_2
t6 t6 0
tA tA tA (min) = (1.5 + time_ax) * T – (tco + tsui + tcable2 + tcable2 + 2*tbuf) time_ax
trd trd1 trd1 (max) = (–trd) + (tskew3 + tskew4)
trd1 (min) = (time_pio_rdx – 0.5)*T – (tsu + thi)
(time_pio_rdx – 0.5) * T > tsu + thi + tskew3 + tskew4
time_pio_rdx
t0 t0 (min) = (time_1 + time_2 + time_9) * T time_1, time_2r, time_9
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
30 Freescale Semiconductor
Electrical Characteristics
Figure 12. Multiword DMA (MDMA) Timing
Figure 13 shows timing for MDMA read, Figure 14 shows timing for MDMA write, and Table 27 lists the
timing parameters for MDMA read and write.
Table 26. PIO Write Timing Parameters
ATA
Parameter
Parameter
from Figure 12 Value Controlling
Variable
t1 t1 t1 (min) = time_1 * T – (tskew1 + tskew2 + tskew5) time_1
t2 t2w t2 (min) = time_2w * T – (tskew1 + tskew2 + tskew5) time_2w
t9 t9 t9 (min) = time_9 * T – (tskew1 + tskew2 + tskew6) time_9
t3 t3 (min) = (time_2w – time_on)* T – (tskew1 + tskew2 +tskew5) If not met, increase
time_2w
t4 t4 t4 (min) = time_4 * T – tskew1 time_4
tA tA tA = (1.5 + time_ax) * T – (tco + tsui + tcable2 + tcable2 + 2*tbuf) time_ax
t0 t0(min) = (time_1 + time_2 + time_9) * T time_1, time_2r,
time_9
Avoid bus contention when switching buffer on by making ton long enough.
Avoid bus contention when switching buffer off by making toff long enough.
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 31
Figure 13. MDMA Read Timing Diagram
Figure 14. MDMA Write Timing Diagram
Table 27. MDMA Read and Write Timing Parameters
ATA
Parameter
Parameter
from
Figure 13,
Figure 14
Value Controlling
Variable
tm, ti tm tm (min) = ti (min) = time_m * T – (tskew1 + tskew2 + tskew5) time_m
td td, td1 td1.(min) = td (min) = time_d * T – (tskew1 + tskew2 + tskew6) time_d
tk tk tk.(min) = time_k * T – (tskew1 + tskew2 + tskew6) time_k
t0 t0 (min) = (time_d + time_k) * T time_d, time_k
tg(read) tgr tgr (min-read) = tco + tsu + tbuf + tbuf + tcable1 + tcable2
tgr.(min-drive) = td – te(drive)
time_d
tf(read) tfr tfr (min-drive) = 0
tg(write) tg (min-write) = time_d * T – (tskew1 + tskew2 + tskew5) time_d
tf(write) tf (min-write) = time_k * T – (tskew1 + tskew2 + tskew6) time_k
tL tL (max) = (time_d + time_k–2)*T – (tsu + tco + 2*tbuf + 2*tcable2) time_d, time_k
tn, tj tkjn tn= tj= tkjn = (max(time_k,. time_jn) * T – (tskew1 + tskew2 + tskew6) time_jn
—ton
toff
ton = time_on * T – tskew1
toff = time_off * T – tskew1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
32 Freescale Semiconductor
Electrical Characteristics
4.3.5.3 UDMA In Timing
Figure 15 shows timing when the UDMA in transfer starts, Figure 16 shows timing when the UDMA in
host terminates transfer, Figure 17 shows timing when the UDMA in device terminates transfer, and
Table 28 lists the timing parameters for UDMA in burst.
Figure 15. UDMA In Transfer Starts Timing Diagram
Figure 16. UDMA In Host Terminates Transfer Timing Diagram
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 33
Figure 17. UDMA In Device Terminates Transfer Timing Diagram
Table 28. UDMA In Burst Timing Parameters
ATA
Parameter
Parameter
from
Figure 15,
Figure 16,
Figure 17
Description Controlling Variable
tack tack tack (min) = (time_ack * T) – (tskew1 + tskew2) time_ack
tenv tenv tenv (min) = (time_env * T) (tskew1 + tskew2)
tenv (max) = (time_env * T) + (tskew1 + tskew2)
time_env
tds tds1 tds – (tskew3) – ti_ds > 0 tskew3, ti_ds, ti_dh
should be low enough
tdh tdh1 tdh – (tskew3) – ti_dh > 0
tcyc tc1 (tcyc – tskew) > T T big enough
trp trp trp (min) = time_rp * T – (tskew1 + tskew2 + tskew6) time_rp
—tx1
1
1There is a special timing requirement in the ATA host that requires the internal DIOW to go only high 3 clocks after the last
active edge on the DSTROBE signal. The equation given on this line tries to capture this constraint.
2. Make ton and toff big enough to avoid bus contention
(time_rp * T) – (tco + tsu + 3T + 2 *tbuf + 2*tcable2) > trfs (drive) time_rp
tmli tmli1 tmli1 (min) = (time_mlix + 0.4) * T time_mlix
tzah tzah tzah (min) = (time_zah + 0.4) * T time_zah
tdzfs tdzfs tdzfs = (time_dzfs * T) – (tskew1 + tskew2) time_dzfs
tcvh tcvh tcvh = (time_cvh *T) – (tskew1 + tskew2) time_cvh
—ton
toff
ton = time_on * T – tskew1
toff = time_off * T – tskew1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
34 Freescale Semiconductor
Electrical Characteristics
4.3.5.4 UDMA Out Timing
Figure 18 shows timing when the UDMA out transfer starts, Figure 19 shows timing when the UDMA out
host terminates transfer, Figure 20 shows timing when the UDMA out device terminates transfer, and
Table 29 lists the timing parameters for UDMA out burst.
Figure 18. UDMA Out Transfer Starts Timing Diagram
Figure 19. UDMA Out Host Terminates Transfer Timing Diagram
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 35
Figure 20. UDMA Out Device Terminates Transfer Timing Diagram
Table 29. UDMA Out Burst Timing Parameters
ATA
Parameter
Parameter
from
Figure 18,
Figure 19,
Figure 20
Value Controlling
Variable
tack tack tack (min) = (time_ack * T) – (tskew1 + tskew2) time_ack
tenv tenv tenv (min) = (time_env * T) – (tskew1 + tskew2)
tenv (max) = (time_env * T) + (tskew1 + tskew2)
time_env
tdvs tdvs tdvs = (time_dvs * T) – (tskew1 + tskew2) time_dvs
tdvh tdvh tdvs = (time_dvh * T) – (tskew1 + tskew2) time_dvh
tcyc tcyc tcyc = time_cyc * T – (tskew1 + tskew2) time_cyc
t2cyc t2cyc = time_cyc * 2 * T time_cyc
trfs1 trfs trfs = 1.6 * T + tsui + tco + tbuf + tbuf
tdzfs tdzfs = time_dzfs * T – (tskew1) time_dzfs
tss tss tss = time_ss * T – (tskew1 + tskew2) time_ss
tmli tdzfs_mli tdzfs_mli =max (time_dzfs, time_mli) * T – (tskew1 + tskew2)
tli tli1 tli1 > 0
tli tli2 tli2 > 0
tli tli3 tli3 > 0
tcvh tcvh tcvh = (time_cvh *T) – (tskew1 + tskew2) time_cvh
—ton
toff
ton = time_on * T – tskew1
toff = time_off * T – tskew1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
36 Freescale Semiconductor
Electrical Characteristics
4.3.6 AUDMUX Electrical Specifications
The AUDMUX provides a programmable interconnect logic for voice, audio and data routing between
internal serial interfaces (SSI) and external serial interfaces (audio and voice codecs). The AC timing of
AUDMUX external pins is hence governed by the SSI module. Please refer to their respective electrical
specifications.
4.3.7 CSPI Electrical Specifications
This section describes the electrical information of the CSPI.
4.3.7.1 CSPI Timing
Figure 21 and Figure 22 depict the master mode and slave mode timings of CSPI, and Table 30 lists the
timing parameters.
Figure 21. CSPI Master Mode Timing Diagram
Figure 22. CSPI Slave Mode Timing Diagram
CS1
CS7 CS8
CS2
CS2
CS4
CS6 CS5
CS9 CS10
SCLK
SSx
MOSI
MISO
SPI_RDY CS11
CS3 CS3
CS1
CS7 CS8
CS2
CS2
CS4
CS6 CS5
CS9 CS10
SCLK
SSx
MISO
MOSI
CS3 CS3
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 37
4.3.8 DPLL Electrical Specifications
The three PLLs of the MCIMX31 (MCU, USB, and Serial PLL) are all based on same DPLL design. The
characteristics provided herein apply to all of them, except where noted explicitly. The PLL characteristics
are provided based on measurements done for both sources—external clock source (CKIH), and FPM
(Frequency Pre-Multiplier) source.
4.3.8.1 Electrical Specifications
Table 31 lists the DPLL specification.
Table 30. CSPI Interface Timing Parameters
ID Parameter Symbol Min Max Units
CS1 SCLK Cycle Time tclk 60 ns
CS2 SCLK High or Low Time tSW 30 ns
CS3 SCLK Rise or Fall tRISE/FALL —7.6ns
CS4 SSx pulse width tCSLH 25 ns
CS5 SSx Lead Time (CS setup time) tSCS 25 ns
CS6 SSx Lag Time (CS hold time) tHCS 25 ns
CS7 Data Out Setup Time tSmosi 5—ns
CS8 Data Out Hold Time tHmosi 5—ns
CS9 Data In Setup Time tSmiso 6—ns
CS10 Data In Hold Time tHmiso 5—ns
CS11 SPI_RDY Setup Time1
1SPI_RDY is sampled internally by ipg_clk and is asynchronous to all other CSPI signals.
tSRDY ——ns
Table 31. DPLL Specifications
Parameter Min Typ Max Unit Comments
CKIH frequency 15 261752MHz
CKIL frequency
(Frequency Pre-multiplier (FPM) enable mode)
32; 32.768, 38.4 kHz FPM lock time 480 µs.
Predivision factor (PD bits) 1 16
PLL reference frequency range after Predivider 15 35 MHz 15 CKIH frequency/PD 35 MHz
15 FPM output/PD 35 MHz
PLL output frequency range:
MPLL and SPLL
UPLL
52
190
532
240
MHz
Maximum allowed reference clock phase noise. ±100 ps
Frequency lock time
(FOL mode or non-integer MF)
398 Cycles of divided reference clock.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
38 Freescale Semiconductor
Electrical Characteristics
4.3.9 EMI Electrical Specifications
This section provides electrical parametrics and timings for EMI module.
4.3.9.1 NAND Flash Controller Interface (NFC)
The NFC supports normal timing mode, using two flash clock cycles for one access of RE and WE. AC
timings are provided as multiplications of the clock cycle and fixed delay. Figure 23, Figure 24, Figure 25,
and Figure 26 depict the relative timing requirements among different signals of the NFC at module level,
for normal mode, and Table 32 lists the timing parameters.
Figure 23. Command Latch Cycle Timing DIagram
Phase lock time 100 µs In addition to the frequency
Maximum allowed PLL supply voltage ripple 25 mV Fmodulation < 50 kHz
Maximum allowed PLL supply voltage ripple 20 mV 50 kHz < Fmodulation < 300 kHz
Maximum allowed PLL supply voltage ripple 25 mV Fmodulation > 300 kHz
PLL output clock phase jitter 5.2 ns Measured on CLKO pin
PLL output clock period jitter 420 ps Measured on CLKO pin
1The user or board designer must take into account that the use of a frequency other than 26 MHz would require adjustment to
the DPTC–DVFS table, which is incorporated into operating system code.
2The PLL reference frequency must be 35 MHz. Therefore, for frequencies between 35 MHz and 70 MHz, program the
predivider to divide by 2 or more. If the CKIH frequency is above 70 MHz, program the predivider to 3 or more. For PD bit
description, see the reference manual.
Table 31. DPLL Specifications (continued)
Parameter Min Typ Max Unit Comments
NFCLE
NFCE
NFWE
NFALE
NFIO[7:0] Command
NF9
NF8
NF1 NF2
NF5
NF3 NF4
NF6 NF7
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 39
Figure 24. Address Latch Cycle Timing DIagram
Figure 25. Write Data Latch Cycle Timing DIagram
NFCLE
NFCE
NFWE
NFALE
NFIO[7:0] Address
NF9
NF8
NF1
NF5
NF3 NF4
NF6
NF11
NF10
NF7
NFCLE
NFCE
NFWE
NFALE
NFIO[15:0] Data to NF
NF9
NF8
NF1
NF5
NF3
NF6
NF11
NF10
NF7
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
40 Freescale Semiconductor
Electrical Characteristics
Figure 26. Read Data Latch Cycle Timing DIagram
Table 32. NFC Timing Parameters1
1The flash clock maximum frequency is 50 MHz.
ID Parameter Symbol
Timing
T = NFC Clock Cycle2
2Subject to DPLL jitter specification on Table 31, "DPLL Specifications," on page 37.
Example Timing for
NFC Clock 33 MHz
T = 30 ns Unit
Min Max Min Max
NF1 NFCLE Setup Time tCLS T–1.0 ns 29 ns
NF2 NFCLE Hold Time tCLH T–2.0 ns 28 ns
NF3 NFCE Setup Time tCS T–1.0 ns 29 ns
NF4 NFCE Hold Time tCH T–2.0 ns 28 ns
NF5 NF_WP Pulse Width tWP T–1.5 ns 28.5 ns
NF6 NFALE Setup Time tALS T 30 ns
NF7 NFALE Hold Time tALH T–3.0 ns 27 ns
NF8 Data Setup Time tDS T 30 ns
NF9 Data Hold Time tDH T–5.0 ns 25 ns
NF10 Write Cycle Time tWC 2T 60 ns
NF11 NFWE Hold Time tWH T–2.5 ns 27.5 ns
NF12 Ready to NFRE Low tRR 6T 180 ns
NF13 NFRE Pulse Width tRP 1.5T 45 ns
NF14 READ Cycle Time tRC 2T 60 ns
NF15 NFRE High Hold Time tREH 0.5T–2.5 ns 12.5 ns
NF16 Data Setup on READ tDSR N/A 10 ns
NF17 Data Hold on READ tDHR N/A 0 ns
NFCLE
NFCE
NFRE
NFRB
NFIO[15:0] Data from NF
NF13
NF15
NF14
NF17
NF12
NF16
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 41
NOTE
High is defined as 80% of signal value and low is defined as 20% of signal
value.
Timing for HCLK is 133 MHz and internal NFC clock (flash clock) is
approximately 33 MHz (30 ns). All timings are listed according to this NFC
clock frequency (multiples of NFC clock phases), except NF16 and NF17,
which are not NFC clock related.
4.3.9.2 Wireless External Interface Module (WEIM)
All WEIM output control signals may be asserted and deasserted by internal clock related to BCLK rising
edge or falling edge according to corresponding assertion/negation control fields. Address always begins
related to BCLK falling edge but may be ended both on rising and falling edge in muxed mode according
to control register configuration. Output data begins related to BCLK rising edge except in muxed mode
where both rising and falling edge may be used according to control register configuration. Input data,
ECB and DTACK all captured according to BCLK rising edge time. Figure 27 depicts the timing of the
WEIM module, and Table 33 lists the timing parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
42 Freescale Semiconductor
Electrical Characteristics
Figure 27. WEIM Bus Timing Diagram
Table 33. WEIM Bus Timing Parameters
ID Parameter Min Max Unit
WE1 Clock fall to Address Valid –0.5 2.5 ns
WE2 Clock rise/fall to Address Invalid –0.5 5 ns
WE3 Clock rise/fall to CS[x] Valid –3 3 ns
WE4 Clock rise/fall to CS[x] Invalid –3 3 ns
WE5 Clock rise/fall to RW Valid 3 3 ns
WE6 Clock rise/fall to RW Invalid –3 3 ns
WE7 Clock rise/fall to OE Valid 3 3 ns
WE1 WE2
WE3 WE4
WE5 WE6
WE7 WE8
WE9 WE10
WE11 WE12
WE13 WE14
WE16
WE15
WE18
WE17
WE20
WE19
WE21 WE22 WE23
BCLK
Address
CS[x]
RW
OE
EB[x]
LBA
Output Data
BCLK
Input Data
WEIM Outputs Timing
WEIM Inputs Timing
ECB
DTACK
...
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 43
NOTE
High is defined as 80% of signal value and low is defined as 20% of signal
value.
Test conditions: load capacitance, 25 pF. Recommended drive strength for all
controls, address, and BCLK is Max drive.
Figure 28, Figure 29, Figure 30, Figure 31, Figure 32, and Figure 33 depict some examples of
basic WEIM accesses to external memory devices with the timing parameters mentioned in
Table 33 for specific control parameter settings.
WE8 Clock rise/fall to OE Invalid –3 3 ns
WE9 Clock rise/fall to EB[x] Valid –3 3 ns
WE10 Clock rise/fall to EB[x] Invalid –3 3 ns
WE11 Clock rise/fall to LBA Valid 3 3 ns
WE12 Clock rise/fall to LBA Invalid –3 3 ns
WE13 Clock rise/fall to Output Data Valid –2.5 4 ns
WE14 Clock rise to Output Data Invalid –2.5 4 ns
WE15 Input Data Valid to Clock rise, FCE=0
FCE=1
8
2.5
ns
WE16 Clock rise to Input Data Invalid, FCE=0
FCE=1
–2
–2
ns
WE17 ECB setup time, FCE=0
FCE=1
6.5
3.5
ns
WE18 ECB hold time, FCE=0
FCE=1
–2
2
ns
WE19 DTACK setup time10—ns
WE20 DTACK hold time14.5 ns
WE21 BCLK High Level Width2, 3 T/2–3 ns
WE22 BCLK Low Level Width2, 3 T/2–3 ns
WE23 BCLK Cycle time215 ns
1Applies to rising edge timing
2BCLK parameters are being measured from the 50% VDD.
3The actual cycle time is derived from the AHB bus clock frequency.
Table 33. WEIM Bus Timing Parameters (continued)
ID Parameter Min Max Unit
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
44 Freescale Semiconductor
Electrical Characteristics
Figure 28. Asynchronous Memory Timing Diagram for Read Access—WSC=1
Figure 29. Asynchronous Memory Timing Diagram for Write Access—
WSC=1, EBWA=1, EBWN=1, LBN=1
Last Valid Address V1
V1
BCLK
ADDR
DATA
RW
LBA
OE
EB[y]
CS[x]
Next Address
WE1 WE2
WE3 WE4
WE7 WE8
WE10
WE9
WE11 WE12
WE15
WE16
Last Valid Address V1
V1
BCLK
ADDR
DATA
RW
LBA
OE
EB[y]
CS[x]
Next Address
WE1 WE2
WE3 WE4
WE5 WE6
WE9 WE10
WE11 WE12
WE13
WE14
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 45
Figure 30. Synchronous Memory Timing Diagram for Two Non-Sequential Read Accesses—
WSC=2, SYNC=1, DOL=0
Figure 31. Synchronous Memory TIming Diagram for Burst Write Access—
BCS=1, WSC=4, SYNC=1, DOL=0, PSR=1
Last Valid Addr Address V1 Address V2
V1 V1+2 V2 V2+2
BCLK
ADDR
ECB
DATA Halfword Halfword
CS[x]
RW
LBA
OE
EB[y]
Halfword Halfword
WE1 WE2
WE4
WE7 WE8
WE9 WE10
WE11 WE12
WE15 WE15
WE16
WE16
WE17 WE17
WE18 WE18
WE3
Last Valid Addr
BCLK
ADDR
DATA
CS[x]
RW
LBA
OE
EB[y]
ECB
Address V1
V1 V1+4 V1+12V1+8
WE9
WE1 WE2
WE3 WE4
WE5 WE6
WE10
WE11
WE13 WE13
WE14 WE14
WE17
WE18
WE12
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
46 Freescale Semiconductor
Electrical Characteristics
Figure 32. Muxed A/D Mode Timing Diagram for Asynchronous Write Access—
WSC=7, LBA=1, LBN=1, LAH=1
Figure 33. Muxed A/D Mode Timing Diagram for Asynchronous Read Access—
WSC=7, LBA=1, LBN=1, LAH=1, OEA=7
4.3.9.3 ESDCTL Electrical Specifications
Figure 34, Figure 35, Figure 36, Figure 37, Figure 38, and Figure 39 depict the timings pertaining to the
ESDCTL module, which interfaces Mobile DDR or SDR SDRAM. Table 34, Table 35, Table 36, Table 37,
Table 38, and Table 39 list the timing parameters.
Write
BCLK
ADDR/
RW
LBA
OE
EB[y]
CS[x]
Address V1 Write Data
Last Valid Addr
M_DATA
WE1 WE2
WE3 WE4
WE6
WE5
WE9 WE10
WE11 WE12
WE13
WE14
BCLK
ADDR/
RW
LBA
OE
EB[y]
CS[x]
Address V1 Read Data
Last Valid Addr
M_DATA
WE2
WE3
WE4
WE11
WE12
WE7 WE8
WE9 WE10
WE15
WE16
WE1
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 47
Figure 34. SDRAM Read Cycle Timing Diagram
Table 34. DDR/SDR SDRAM Read Cycle Timing Parameters
ID Parameter Symbol Min Max Unit
SD1 SDRAM clock high-level width tCH 3.4 4.1 ns
SD2 SDRAM clock low-level width tCL 3.4 4.1 ns
SD3 SDRAM clock cycle time tCK 7.5 ns
SD4 CS, RAS, CAS, WE, DQM, CKE setup time tCMS 2.0 ns
SD5 CS, RAS, CAS, WE, DQM, CKE hold time tCMH 1.8 ns
SD6 Address setup time tAS 2.0 ns
SD7 Address hold time tAH 1.8 ns
SD8 SDRAM access time tAC 6.47 ns
SDCLK
WE
ADDR
DQ
DQM
COL/BA
Data
CS
CAS
RAS
Note: CKE is high during the read/write cycle.
SD4
SD1
SD3
SD2
SD4
SD4
SD4
SD4
SD5
SD5
SD5
SD5
SD5
SD6
SD7
SD10
SD8
SD9
SDCLK
ROW/BA
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
48 Freescale Semiconductor
Electrical Characteristics
NOTE
SDR SDRAM CLK parameters are being measured from the 50%
point—that is, high is defined as 50% of signal value and low is defined as
50% of signal value. SD1 + SD2 does not exceed 7.5 ns for 133 MHz.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 34 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
SD9 Data out hold time1tOH 1.8 ns
SD10 Active to read/write command period tRC 10 clock
1Timing parameters are relevant only to SDR SDRAM. For the specific DDR SDRAM data related timing parameters, see
Ta bl e 38 and Tabl e 39 .
Table 34. DDR/SDR SDRAM Read Cycle Timing Parameters (continued)
ID Parameter Symbol Min Max Unit
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 49
Figure 35. SDR SDRAM Write Cycle Timing Diagram
Table 35. SDR SDRAM Write Timing Parameters
ID Parameter Symbol Min Max Unit
SD1 SDRAM clock high-level width tCH 3.4 4.1 ns
SD2 SDRAM clock low-level width tCL 3.4 4.1 ns
SD3 SDRAM clock cycle time tCK 7.5 ns
SD4 CS, RAS, CAS, WE, DQM, CKE setup time tCMS 2.0 ns
SD5 CS, RAS, CAS, WE, DQM, CKE hold time tCMH 1.8 ns
SD6 Address setup time tAS 2.0 ns
SD7 Address hold time tAH 1.8 ns
SD11 Precharge cycle period1tRP 1 4 clock
SD12 Active to read/write command delay1tRCD 1 8 clock
CS
CAS
WE
RAS
ADDR
DQ
DQM
BA ROW / BA COL/BA
DATA
SD4
SD4
SD4SD4
SD5
SD5
SD5
SD5
SD7
SD6
SD12
SD13 SD14
SD11
SDCLK
SD1
SD3
SD2
SDCLK
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
50 Freescale Semiconductor
Electrical Characteristics
NOTE
SDR SDRAM CLK parameters are being measured from the 50%
point—that is, high is defined as 50% of signal value and low is defined as
50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 35 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
Figure 36. SDRAM Refresh Timing Diagram
SD13 Data setup time tDS 2.0 ns
SD14 Data hold time tDH 1.3 ns
1SD11 and SD12 are determined by SDRAM controller register settings.
Table 36. SDRAM Refresh Timing Parameters
ID Parameter Symbol Min Max Unit
SD1 SDRAM clock high-level width tCH 3.4 4.1 ns
SD2 SDRAM clock low-level width tCL 3.4 4.1 ns
Table 35. SDR SDRAM Write Timing Parameters (continued)
ID Parameter Symbol Min Max Unit
CS
CAS
WE
RAS
ADDR BA ROW/BA
SD6
SD7
SD11
SD10 SD10
SDCLK
SD1
SD2
SDCLK
SD3
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 51
NOTE
SDR SDRAM CLK parameters are being measured from the 50%
point—that is, high is defined as 50% of signal value and low is defined as
50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 36 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
SD3 SDRAM clock cycle time tCK 7.5 ns
SD6 Address setup time tAS 1.8 ns
SD7 Address hold time tAH 1.8 ns
SD10 Precharge cycle period1tRP 1 4 clock
SD11 Auto precharge command period1tRC 2 20 clock
1SD10 and SD11 are determined by SDRAM controller register settings.
Table 36. SDRAM Refresh Timing Parameters (continued)
ID Parameter Symbol Min Max Unit
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
52 Freescale Semiconductor
Electrical Characteristics
Figure 37. SDRAM Self-Refresh Cycle Timing Diagram
NOTE
The clock will continue to run unless both CKEs are low. Then the clock will
be stopped in low state.
Table 37. SDRAM Self-Refresh Cycle Timing Parameters
ID Parameter Symbol Min Max Unit
SD16 CKE output delay time tCKS 1.8 ns
SDCLK
CS
CAS
RAS
ADDR BA
WE
CKE
Don’t care
SD16 SD16
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 53
Figure 38. Mobile DDR SDRAM Write Cycle Timing Diagram
NOTE
SDRAM CLK and DQS related parameters are being measured from the
50% point—that is, high is defined as 50% of signal value and low is defined
as 50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 38 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
Table 38. Mobile DDR SDRAM Write Cycle Timing Parameters1
1Test condition: Measured using delay line 5 programmed as follows: ESDCDLY5[15:0] = 0x0703.
ID Parameter Symbol Min Max Unit
SD17 DQ and DQM setup time to DQS tDS 0.95 ns
SD18 DQ and DQM hold time to DQS tDH 0.95 ns
SD19 Write cycle DQS falling edge to SDCLK output delay time. tDSS 1.8 ns
SD20 Write cycle DQS falling edge to SDCLK output hold time. tDSH 1.8 ns
SDCLK
SDCLK
DQS (output)
DQ (output)
DQM (output)
Data Data Data Data Data Data Data Data
DM DM DM DM DM DM DM DM
SD17
SD17
SD17
SD17
SD18
SD18
SD18 SD18
SD19 SD20
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
54 Freescale Semiconductor
Electrical Characteristics
Figure 39. Mobile DDR SDRAM DQ versus DQS and SDCLK Read Cycle Timing Diagram
NOTE
SDRAM CLK and DQS related parameters are being measured from the
50% point—that is, high is defined as 50% of signal value and low is defined
as 50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 39 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
4.3.10 ETM Electrical Specifications
ETM is an ARM protocol. The timing specifications in this section are given as a guide for a TPA that
supports TRACECLK frequencies up to 133 MHz.
Figure 40 depicts the TRACECLK timings of ETM, and Table 40 lists the timing parameters.
Figure 40. ETM TRACECLK Timing Diagram
Table 39. Mobile DDR SDRAM Read Cycle Timing Parameters
ID Parameter Symbol Min Max Unit
SD21 DQS – DQ Skew (defines the Data valid window in read cycles related to DQS). tDQSQ 0.85 ns
SD22 DQS DQ HOLD time from DQS tQH 2.3 ns
SD23 DQS output access time from SDCLK posedge tDQSCK 6.7 ns
SDCLK
SDCLK
DQS (input)
DQ (input) Data
Data
Data
Data
Data
Data
DataData
SD23
SD21
SD22
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 55
Figure 41 depicts the setup and hold requirements of the trace data pins with respect to TRACECLK, and
Table 41 lists the timing parameters.
Figure 41. Trace Data Timing Diagram
4.3.10.1 Half-Rate Clocking Mode
When half-rate clocking is used, the trace data signals are sampled by the TPA on both the rising and falling
edges of TRACECLK, where TRACECLK is half the frequency of the clock shown in Figure 41.
4.3.11 FIR Electrical Specifications
FIR implements asynchronous infrared protocols (FIR, MIR) that are defined by IrDA® (Infrared Data
Association). Refer to http://www.IrDA.org for details on FIR and MIR protocols.
4.3.12 Fusebox Electrical Specifications
Table 40. ETM TRACECLK Timing Parameters
ID Parameter Min Max Unit
Tcyc Clock period Frequency dependent ns
Twl Low pulse width 2 ns
Twh High pulse width 2 ns
TrClock and data rise time 3 ns
TfClock and data fall time 3 ns
Table 41. ETM Trace Data Timing Parameters
ID Parameter Min Max Unit
TsData setup 2 ns
ThData hold 1 ns
Table 42. Fusebox Timing Characteristics
Ref. Num Description Symbol Minimum Typical Maximum Units
1 Program time for eFuse1
1The program length is defined by the value defined in the epm_pgm_length[2:0] bits of the IIM module. The value to program
is based on a 32 kHz clock source (4 * 1/32 kHz = 125 µs).
tprogram 125 µs
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
56 Freescale Semiconductor
Electrical Characteristics
4.3.13 I2C Electrical Specifications
This section describes the electrical information of the I2C Module.
4.3.13.1 I2C Module Timing
Figure 42 depicts the timing of I2C module. Table 43 lists the I2C module timing parameters where the I/O
supply is 2.7 V. 1
Figure 42. I2C Bus Timing Diagram
Table 43. I2C Module Timing Parameters—I2C Pin I/O Supply=2.7 V
ID Parameter
Standard Mode Fast Mode
Unit
Min Max Min Max
IC1 I2CLK cycle time 10 2.5 μs
IC2 Hold time (repeated) START condition 4.0 0.6 μs
IC3 Set-up time for STOP condition 4.0 0.6 μs
IC4 Data hold time 01
1A device must internally provide a hold time of at least 300 ns for I2DAT signal in order to bridge the undefined region of the
falling edge of I2CLK.
3.452
2The maximum hold time has to be met only if the device does not stretch the LOW period (ID IC6) of the I2CLK signal.
010.92μs
IC5 HIGH Period of I2CLK Clock 4.0 0.6 μs
IC6 LOW Period of the I2CLK Clock 4.7 1.3 μs
IC7 Set-up time for a repeated START condition 4.7 0.6 μs
IC8 Data set-up time 250 1003
3A Fast-mode I2C-bus device can be used in a standard-mode I2C-bus system, but the requirement of set-up time (ID IC7) of
250 ns must then be met. This will automatically be the case if the device does not stretch the LOW period of the I2CLK signal.
If such a device does stretch the LOW period of the I2CLK signal, it must output the next data bit to the I2DAT line max_rise_time
(ID No IC10) + data_setup_time (ID No IC8) = 1000 + 250 = 1250 ns (according to the Standard-mode I2C-bus specification)
before the I2CLK line is released.
—ns
IC9 Bus free time between a STOP and START condition 4.7 1.3 μs
IC10 Rise time of both I2DAT and I2CLK signals 1000 20+0.1Cb4
4Cb = total capacitance of one bus line in pF.
300 ns
IC11 Fall time of both I2DAT and I2CLK signals 300 20+0.1Cb4300 ns
IC12 Capacitive load for each bus line (Cb) 400 400 pF
IC10 IC11 IC9
IC2 IC8 IC4 IC7 IC3
IC6
IC10
IC5
IC11 START STOP START
START
I2DAT
I2CLK
IC1
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 57
4.3.14 IPU—Sensor Interfaces
4.3.14.1 Supported Camera Sensors
Table 44 lists the known supported camera sensors at the time of publication.
4.3.14.2 Functional Description
There are three timing modes supported by the IPU.
4.3.14.2.1 Pseudo BT.656 Video Mode
Smart camera sensors, which include imaging processing, usually support video mode transfer. They use
an embedded timing syntax to replace the SENSB_VSYNC and SENSB_HSYNC signals. The timing
syntax is defined by the BT.656 standard.
This operation mode follows the recommendations of ITU BT.656 specifications. The only control signal
used is SENSB_PIX_CLK. Start-of-frame and active-line signals are embedded in the data stream. An
active line starts with a SAV code and ends with a EAV code. In some cases, digital blanking is inserted in
between EAV and SAV code. The CSI decodes and filters out the timing-coding from the data stream, thus
recovering SENSB_VSYNC and SENSB_HSYNC signals for internal use.
Table 44. Supported Camera Sensors1
1Freescale Semiconductor does not recommend one supplier over another and in no way suggests that these are the only
camera suppliers.
Vendor Model
Conexant CX11646, CX204902, CX204502
2These sensors not validated at time of publication.
Agilant HDCP–2010, ADCS–10212, ADCS–10212
Toshiba TC90A70
ICMedia ICM202A, ICM1022
iMagic IM8801
Transchip TC5600, TC5600J, TC5640, TC5700, TC6000
Fujitsu MB86S02A
Micron MI–SOC–0133
Matsushita MN39980
STMicro W6411, W6500, W65012, W66002, W65522, STV09742
OmniVision OV7620, OV6630
Sharp LZ0P3714 (CCD)
Motorola MC30300 (Python)2, SCM200142, SCM201142, SCM221142, SCM200272
National Semiconductor LM96182
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
58 Freescale Semiconductor
Electrical Characteristics
4.3.14.2.2 Gated Clock Mode
The SENSB_VSYNC, SENSB_HSYNC, and SENSB_PIX_CLK signals are used in this mode. See
Figure 43.
Figure 43. Gated Clock Mode Timing Diagram
A frame starts with a rising edge on SENSB_VSYNC (all the timings correspond to straight polarity of the
corresponding signals). Then SENSB_HSYNC goes to high and hold for the entire line. Pixel clock is valid
as long as SENSB_HSYNC is high. Data is latched at the rising edge of the valid pixel clocks.
SENSB_HSYNC goes to low at the end of line. Pixel clocks then become invalid and the CSI stops
receiving data from the stream. For next line the SENSB_HSYNC timing repeats. For next frame the
SENSB_VSYNC timing repeats.
4.3.14.2.3 Non-Gated Clock Mode
The timing is the same as the gated-clock mode (described in Section 4.3.14.2.2, “Gated Clock Mode”),
except for the SENSB_HSYNC signal, which is not used. See Figure 44. All incoming pixel clocks are
valid and will cause data to be latched into the input FIFO. The SENSB_PIX_CLK signal is inactive (states
low) until valid data is going to be transmitted over the bus.
Figure 44. Non-Gated Clock Mode Timing Diagram
SENSB_VSYNC
SENSB_HSYNC
SENSB_PIX_CLK
SENSB_DATA[9:0] invalid
1st byte
n+1th frame
invalid
1st byte
nth frame
Active Line
Start of Frame
SENSB_VSYNC
SENSB_PIX_CLK
SENSB_DATA[7:0] invalid
1st byte
n+1th frame
invalid
1st byte
nth frame
Start of Frame
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 59
The timing described in Figure 44 is that of a Motorola sensor. Some other sensors may have a slightly
different timing. The CSI can be programmed to support rising/falling-edge triggered SENSB_VSYNC;
active-high/low SENSB_HSYNC; and rising/falling-edge triggered SENSB_PIX_CLK.
4.3.14.3 Electrical Characteristics
Figure 45 depicts the sensor interface timing, and Table 45 lists the timing parameters.
Figure 45. Sensor Interface Timing Diagram
4.3.15 IPUDisplay Interfaces
4.3.15.1 Supported Display Components
Table 46 lists the known supported display components at the time of publication.
Table 45. Sensor Interface Timing Parameters1
1The timing specifications for Figure 45 are referenced to the rising edge of SENS_PIX_CLK when the
SENS_PIX_CLK_POL bit in the CSI_SENS_CONF register is cleared. When the SENS_PIX_CLK_POL is set,
the clock is inverted and all timing specifications will remain the same but are referenced to the falling edge of
the clock.
ID Parameter Symbol Min. Max. Units
IP1 Sensor input clock frequency Fmck 0.01 133 MHz
IP2 Data and control setup time Tsu 5 ns
IP3 Data and control holdup time Thd 3 ns
IP4 Sensor output (pixel) clock frequency Fpck 0.01 133 MHz
SENSB_MCLK
IP3
SENSB_DATA,
SENSB_VSYNC,
IP2
1/IP1
1/IP4
SENSB_PIX_CLK
(Sensor Input)
(Sensor Output)
SENSB_HSYNC
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
60 Freescale Semiconductor
Electrical Characteristics
4.3.15.2 Synchronous Interfaces
4.3.15.2.1 Interface to Active Matrix TFT LCD Panels, Functional Description
Figure 46 depicts the LCD interface timing for a generic active matrix color TFT panel. In this figure
signals are shown with negative polarity. The sequence of events for active matrix interface timing is:
DISPB_D3_CLK latches data into the panel on its negative edge (when positive polarity is
selected). In active mode, DISPB_D3_CLK runs continuously.
DISPB_D3_HSYNC causes the panel to start a new line.
DISPB_D3_VSYNC causes the panel to start a new frame. It always encompasses at least one
HSYNC pulse.
Table 46. Supported Display Components1
1Freescale Semiconductor does not recommend one supplier over another and in no way suggests that these are the only
display component suppliers.
Type Vendor Model
TFT displays
(memory-less)
Sharp (HR-TFT Super
Mobile LCD family)
LQ035Q7 DB02, LM019LC1Sxx
Samsung (QCIF and
QVGA TFT modules for
mobile phones)
LTS180S1-HF1, LTS180S3-HF1, LTS350Q1-PE1,
LTS350Q1-PD1, LTS220Q1-HE12
2These display components not validated at time of publication.
Toshiba (LTM series) LTM022P8062, LTM04C380K2,
LTM018A02A2, LTM020P3322, LTM021P3372, LTM019P3342,
LTM022A7832, LTM022A05ZZ2
NEC NL6448BC20-08E, NL8060BC31-27
Display controllers Epson S1D15xxx series, S1D19xxx series, S1D13713, S1D13715
Solomon Systech SSD1301 (OLED), SSD1828 (LDCD)
Hitachi HD66766, HD66772
ATI W2300
Smart display modules Epson L1F10043 T2, L1F10044 T2, L1F10045 T2, L2D220022, L2D200142,
L2F500322, L2D25001 T2
Hitachi 120 160 65K/4096 C-STN (#3284 LTD-1398-2) based on HD 66766
controller
Densitron Europe LTD All displays with MPU 80/68K series interface and serial peripheral
interface
Sharp LM019LC1Sxx
Sony ACX506AKM
Digital video encoders
(for TV)
Analog Devices ADV7174/7179
Crystal (Cirrus Logic) CS49xx series
Focus FS453/4
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 61
DISPB_D3_DRDY acts like an output enable signal to the CRT display. This output enables the
data to be shifted onto the display. When disabled, the data is invalid and the trace is off.
Figure 46. Interface Timing Diagram for TFT (Active Matrix) Panels
4.3.15.2.2 Interface to Active Matrix TFT LCD Panels, Electrical Characteristics
Figure 47 depicts the horizontal timing (timing of one line), including both the horizontal sync pulse and
the data. All figure parameters shown are programmable. The timing images correspond to inverse polarity
of the DISPB_D3_CLK signal and active-low polarity of the DISPB_D3_HSYNC, DISPB_D3_VSYNC
and DISPB_D3_DRDY signals.
Figure 47. TFT Panels Timing Diagram—Horizontal Sync Pulse
Figure 48 depicts the vertical timing (timing of one frame). All figure parameters shown are
programmable.
DISPB_D3_CLK
123 mm-1
DISPB_D3_HSYNC
DISPB_D3_VSYNC
DISPB_D3_HSYNC
LINE 1 LINE 2 LINE 3 LINE 4 LINE n-1 LINE n
DISPB_D3_DRDY
DISPB_D3_DATA
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_DATA
DISPB_D3_CLK
IP7
IP9 IP10
IP8
Start of line IP5
IP6
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
62 Freescale Semiconductor
Electrical Characteristics
Figure 48. TFT Panels Timing Diagram—Vertical Sync Pulse
Table 47 shows timing parameters of signals presented in Figure 47 and Figure 48.
Table 47. Synchronous Display Interface Timing Parameters—Pixel Level
ID Parameter Symbol Value Units
IP5 Display interface clock period Tdicp Tdicp1
1Display interface clock period immediate value.
Display interface clock period average value.
ns
IP6 Display pixel clock period Tdpcp (DISP3_IF_CLK_CNT_D+1) * Tdicp ns
IP7 Screen width Tsw (SCREEN_WIDTH+1) * Tdpcp ns
IP8 HSYNC width Thsw (H_SYNC_WIDTH+1) * Tdpcp ns
IP9 Horizontal blank interval 1 Thbi1 BGXP * Tdpcp ns
IP10 Horizontal blank interval 2 Thbi2 (SCREEN_WIDTH – BGXP – FW) * Tdpcp ns
IP11 HSYNC delay Thsd H_SYNC_DELAY * Tdpcp ns
IP12 Screen height Tsh (SCREEN_HEIGHT+1) * Tsw ns
IP13 VSYNC width Tvsw if V_SYNC_WIDTH_L = 0 than
(V_SYNC_WIDTH+1) * Tdpcp
else
(V_SYNC_WIDTH+1) * Tsw
ns
IP14 Vertical blank interval 1 Tvbi1 BGYP * Tsw ns
IP15 Vertical blank interval 2 Tvbi2 (SCREEN_HEIGHT – BGYP – FH) * Tsw ns
IP14
DISPB_D3_VSYNC
DISPB_D3_HSYNC
DISPB_D3_DRDY
Start of frame End of frame
IP12
IP15
IP13
IP11
Tdicp
THSP_CLK DISP3_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------
for integer DISP3_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------
,
THSP_CLK floor DISP3_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------0.5 0.5±+
⎝⎠
⎛⎞
for fractional DISP3_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------
,
=
Tdicp THSP_CLK DISP3_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------
=
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 63
NOTE
HSP_CLK is the High-Speed Port Clock, which is the input to the Image
Processing Unit (IPU). Its frequency is controlled by the Clock Control
Module (CCM) settings. The HSP_CLK frequency must be greater than or
equal to the AHB clock frequency.
The SCREEN_WIDTH, SCREEN_HEIGHT, H_SYNC_WIDTH, V_SYNC_WIDTH, BGXP, BGYP and
V_SYNC_WIDTH_L parameters are programmed via the SDC_HOR_CONF, SDC_VER_CONF,
SDC_BG_POS Registers. The FW and FH parameters are programmed for the corresponding DMA
channel. The DISP3_IF_CLK_PER_WR, HSP_CLK_PERIOD and DISP3_IF_CLK_CNT_D parameters
are programmed via the DI_DISP3_TIME_CONF, DI_HSP_CLK_PER and DI_DISP_ACC_CC
Registers.
Figure 49 depicts the synchronous display interface timing for access level, and Table 48 lists the timing
parameters. The DISP3_IF_CLK_DOWN_WR and DISP3_IF_CLK_UP_WR parameters are set via the
DI_DISP3_TIME_CONF Register.
Figure 49. Synchronous Display Interface Timing Diagram—Access Level
Table 48. Synchronous Display Interface Timing Parameters—Access Level
ID Parameter Symbol Min Typ1
1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display. These
conditions may be device specific.
Max Units
IP16 Display interface clock low time Tckl Tdicd–Tdicu–1.5 Tdicd2–Tdicu3Tdicd–Tdicu+1.5 ns
IP17 Display interface clock high
time
Tckh Tdicp–Tdicd+Tdicu–1.5 Tdicp–Tdicd+Tdicu Tdicp–Tdicd+Tdicu+1.5 ns
IP18 Data setup time Tdsu Tdicd–3.5 Tdicu ns
IP19 Data holdup time Tdhd Tdicp–Tdicd–3.5 Tdicp–Tdicu ns
IP20 Control signals setup time to
display interface clock
Tcsu Tdicd–3.5 Tdicu ns
IP19
DISPB_D3_CLK
DISPB_DATA
IP18
IP20
DISPB_D3_VSYNC
IP17IP16
DISPB_D3_DRDY
DISPB_D3_HSYNC
other controls
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
64 Freescale Semiconductor
Electrical Characteristics
4.3.15.3 Interface to Sharp HR-TFT Panels
Figure 50 depicts the Sharp HR-TFT panel interface timing, and Table 49 lists the timing parameters. The
CLS_RISE_DELAY, CLS_FALL_DELAY, PS_FALL_DELAY, PS_RISE_DELAY,
REV_TOGGLE_DELAY parameters are defined in the SDC_SHARP_CONF_1 and
SDC_SHARP_CONF_2 registers. For other Sharp interface timing characteristics, refer to
Section 4.3.15.2.2, “Interface to Active Matrix TFT LCD Panels, Electrical Characteristics.The timing
images correspond to straight polarity of the Sharp signals.
Figure 50. Sharp HR-TFT Panel Interface Timing Diagram—Pixel Level
2Display interface clock down time
3Display interface clock up time
where CEIL(X) rounds the elements of X to the nearest integers towards infinity.
Tdicd 1
2
---THSP_CLK ceil 2 DISP3_IF_CLK_DOWN_WRHSP_CLK_PERIOD
---------------------------------------------------------------------------------
=
Tdicu 1
2
---THSP_CLK ceil 2 DISP3_IF_CLK_UP_WRHSP_CLK_PERIOD
----------------------------------------------------------------------
=
D1 D2
DISPB_D3_CLK
DISPB_D3_DATA
DISPB_D3_SPL
DISPB_D3_HSYNC
DISPB_D3_CLS
DISPB_D3_PS
DISPB_D3_REV
1 DISPB_D3_CLK period
IP26
D320
Horizontal timing
IP22
IP23
IP25
IP21
IP24
Example is drawn with FW+1=320 pixel/line, FH+1=240 lines.
SPL pulse width is fixed and aligned to the first data of the line.
REV toggles every HSYNC period.
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 65
4.3.15.4 Synchronous Interface to Dual-Port Smart Displays
Functionality and electrical characteristics of the synchronous interface to dual-port smart displays are
identical to parameters of the synchronous interface. See Section 4.3.15.2.2, “Interface to Active Matrix
TFT LCD Panels, Electrical Characteristics.”
4.3.15.4.1 Interface to a TV Encoder, Functional Description
The interface has an 8-bit data bus, transferring a single 8-bit value (Y/U/V) in each cycle. The bits
D7–D0 of the value are mapped to bits LD17–LD10 of the data bus, respectively. Figure 51 depicts the
interface timing,
The frequency of the clock DISPB_D3_CLK is 27 MHz (within 10%).
The DISPB_D3_HSYNC, DISPB_D3_VSYNC and DISPB_D3_DRDY signals are active low.
The transition to the next row is marked by the negative edge of the DISPB_D3_HSYNC signal. It
remains low for a single clock cycle.
The transition to the next field/frame is marked by the negative edge of the DISPB_D3_VSYNC
signal. It remains low for at least one clock cycle.
At a transition to an odd field (of the next frame), the negative edges of DISPB_D3_VSYNC
and DISPB_D3_HSYNC coincide.
At a transition to an even field (of the same frame), they do not coincide.
The active intervals—during which data is transferred—are marked by the DISPB_D3_HSYNC
signal being high.
Table 49. Sharp Synchronous Display Interface Timing Parameters—Pixel Level
ID Parameter Symbol Value Units
IP21 SPL rise time Tsplr (BGXP – 1) * Tdpcp ns
IP22 CLS rise time Tclsr CLS_RISE_DELAY * Tdpcp ns
IP23 CLS fall time Tclsf CLS_FALL_DELAY * Tdpcp ns
IP24 CLS rise and PS fall time Tpsf PS_FALL_DELAY * Tdpcp ns
IP25 PS rise time Tpsr PS_RISE_DELAY * Tdpcp ns
IP26 REV toggle time Trev REV_TOGGLE_DELAY * Tdpcp ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
66 Freescale Semiconductor
Electrical Characteristics
Figure 51. TV Encoder Interface Timing Diagram
DISPB_D3_CLK
DISPB_D3_HSYNC
DISPB_DATA
DISPB_D3_VSYNC
Cb Y CrCb Y Cr Y
Pixel Data Timing
Line and Field Timing - NTSC
Even Field Odd Field
Odd Field Even Field
624621
311308
Line and Field Timing - PAL
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_VSYNC
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_VSYNC
Even Field Odd Field
Odd Field Even Field
1523
262261
DISPB_D3_DRDY
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_VSYNC
DISPB_D3_HSYNC
DISPB_D3_VSYNC
524 525 2 3 4 10
263 264 265 266 267 268 269 273
622 623 625 1 2 23
309 310 312 313 314 336
56
34
316315
DISPB_D3_DRDY
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 67
4.3.15.4.2 Interface to a TV Encoder, Electrical Characteristics
The timing characteristics of the TV encoder interface are identical to the synchronous display
characteristics. See Section 4.3.15.2.2, “Interface to Active Matrix TFT LCD Panels, Electrical
Characteristics.”
4.3.15.5 Asynchronous Interfaces
4.3.15.5.1 Parallel Interfaces, Functional Description
The IPU supports the following asynchronous parallel interfaces:
System 80 interface
Type 1 (sampling with the chip select signal) with and without byte enable signals.
Type 2 (sampling with the read and write signals) with and without byte enable signals.
System 68k interface
Type 1 (sampling with the chip select signal) with or without byte enable signals.
Type 2 (sampling with the read and write signals) with or without byte enable signals.
For each of four system interfaces, there are three burst modes:
1. Burst mode without a separate clock. The burst length is defined by the corresponding parameters
of the IDMAC (when data is transferred from the system memory) of by the HBURST signal (when
the MCU directly accesses the display via the slave AHB bus). For system 80 and system 68k type
1 interfaces, data is sampled by the CS signal and other control signals changes only when transfer
direction is changed during the burst. For type 2 interfaces, data is sampled by the WR/RD signals
(system 80) or by the ENABLE signal (system 68k) and the CS signal stays active during the whole
burst.
2. Burst mode with the separate clock DISPB_BCLK. In this mode, data is sampled with the
DISPB_BCLK clock. The CS signal stays active during whole burst transfer. Other controls are
changed simultaneously with data when the bus state (read, write or wait) is altered. The CS
signals and other controls move to non-active state after burst has been completed.
3. Single access mode. In this mode, slave AHB and DMA burst are broken to single accesses. The
data is sampled with CS or other controls according the interface type as described above. All
controls (including CS) become non-active for one display interface clock after each access. This
mode corresponds to the ATI single access mode.
Both system 80 and system 68k interfaces are supported for all described modes as depicted in Figure 52,
Figure 53, Figure 54, and Figure 55. These timing images correspond to active-low DISPB_D#_CS,
DISPB_D#_WR and DISPB_D#_RD signals.
Additionally, the IPU allows a programmable pause between two burst. The pause is defined in the
HSP_CLK cycles. It allows to avoid timing violation between two sequential bursts or two accesses to
different displays. The range of this pause is from 4 to 19 HSP_CLK cycles.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
68 Freescale Semiconductor
Electrical Characteristics
Figure 52. Asynchronous Parallel System 80 Interface (Type 1) Burst Mode Timing Diagram
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Burst access mode with sampling by CS signal
Burst access mode with sampling by separate burst clock (BCLK)
Single access mode (all control signals are not active for one display interface clock after each display access)
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 69
Figure 53. Asynchronous Parallel System 80 Interface (Type 2) Burst Mode Timing Diagram
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Burst access mode with sampling by WR/RD signals
Burst access mode with sampling by separate burst clock (BCLK)
Single access mode (all control signals are not active for one display interface clock after each display access)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
70 Freescale Semiconductor
Electrical Characteristics
Figure 54. Asynchronous Parallel System 68k Interface (Type 1) Burst Mode Timing Diagram
DISPB_D#_CS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_D#_CS
DISPB_WR
DISPB_RD
DISPB_DATA
(READ/WRITE)
(ENABLE)
DISPB_PAR_RS
DISPB_PAR_RS
(READ/WRITE)
(ENABLE)
(READ/WRITE)
(ENABLE)
Burst access mode with sampling by CS signal
Burst access mode with sampling by separate burst clock (BCLK)
Single access mode (all control signals are not active for one display interface clock after each display access)
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 71
Figure 55. Asynchronous Parallel System 68k Interface (Type 2) Burst Mode TIming Diagram
Display read operation can be performed with wait states when each read access takes up to four display
interface clock cycles according to the DISP0_RD_WAIT_ST parameter in the
DI_DISP0_TIME_CONF_3, DI_DISP1_TIME_CONF_3, DI_DISP2_TIME_CONF_3 Registers.
Figure 56 shows timing of the parallel interface with read wait states.
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
(READ/WRITE)
(ENABLE)
(READ/WRITE)
(ENABLE)
(READ/WRITE)
(ENABLE)
Burst access mode with sampling by ENABLE signal
Burst access mode with sampling by separate burst clock (BCLK)
Single access mode (all control signals are not active for one display interface clock after each display access)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
72 Freescale Semiconductor
Electrical Characteristics
Figure 56. Parallel Interface Timing Diagram—Read Wait States
4.3.15.5.2 Parallel Interfaces, Electrical Characteristics
Figure 57, Figure 59, Figure 58, and Figure 60 depict timing of asynchronous parallel interfaces based on
the system 80 and system 68k interfaces. Table 50 lists the timing parameters at display access level. All
timing images are based on active low control signals (signals polarity is controlled via the
DI_DISP_SIG_POL Register).
WRITE OPERATION READ OPERATION
DISPB_D#_CS
DISPB_RD
DISPB_WR
DISPB_PAR_RS
DISPB_D#_CS
DISPB_RD
DISPB_WR
DISPB_PAR_RS
DISPB_DATA
DISPB_D#_CS
DISPB_RD
DISPB_WR
DISPB_PAR_RS
DISPB_DATA
DISPB_DATA
DISP0_RD_WAIT_ST=00
DISP0_RD_WAIT_ST=01
DISP0_RD_WAIT_ST=10
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 73
Figure 57. Asynchronous Parallel System 80 Interface (Type 1) Timing Diagram
IP28, IP27
Read Data
IP32, IP30
IP37
IP38
DISPB_PAR_RS
DISPB_DATA
DISPB_DATA
DISPB_WR (WRITE_L)
(Input)
(Output)
IP35, IP33 IP36, IP34
IP31, IP29
IP40
IP39
IP46,IP44
IP47
IP45, IP43
IP42, IP41
DISPB_RD (READ_L)
DISPB_D#_CS
DISPB_DATA[16]
DISPB_DATA[17]
read point
(WRITE_H)
(READ_H)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
74 Freescale Semiconductor
Electrical Characteristics
Figure 58. Asynchronous Parallel System 80 Interface (Type 2) Timing Diagram
IP28, IP27
Read Data
IP32, IP30
DISPB_PAR_RS
DISPB_DATA
DISPB_DATA
DISPB_WR (WRITE_L)
(Input)
(Output)
IP36, IP34
IP31, IP29
IP40
IP39
IP47
IP45, IP43
IP42, IP41
DISPB_RD (READ_L)
DISPB_D#_CS
DISPB_DATA[16]
DISPB_DATA[17]
(WRITE_H)
(READ_H)
IP38
IP35, IP33
IP37
read point
IP46,IP44
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 75
Figure 59. Asynchronous Parallel System 68k Interface (Type 1) Timing Diagram
IP28, IP27
Read Data
IP32, IP30
IP37 IP38
DISPB_PAR_RS
DISPB_DATA
DISPB_DATA
DISPB_WR
(Input)
(Output)
IP35,IP33 IP36, IP34
IP31, IP29
IP40
IP39
IP47
IP45, IP43
IP42, IP41
DISPB_RD (ENABLE_L)
DISPB_D#_CS
(READ/WRITE)
DISPB_DATA[17]
(ENABLE_H)
read point
IP46,IP44
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
76 Freescale Semiconductor
Electrical Characteristics
Figure 60. Asynchronous Parallel System 68k Interface (Type 2) Timing Diagram
Table 50. Asynchronous Parallel Interface Timing Parameters—Access Level
ID Parameter Symbol Min. Typ.1Max. Units
IP27 Read system cycle time Tcycr Tdicpr–1.5 Tdicpr2Tdicpr+1.5 ns
IP28 Write system cycle time Tcycw Tdicpw–1.5 Tdicpw3Tdicpw+1.5 ns
IP29 Read low pulse width Trl Tdicdr–Tdicur–1.5 Tdicdr4–Tdicur5Tdicdr–Tdicur+1.5 ns
IP30 Read high pulse width Trh Tdicpr–Tdicdr+Tdicur–1.5 Tdicpr–Tdicdr+
Tdicur
Tdicpr–Tdicdr+Tdicur+1.5 ns
IP31 Write low pulse width Twl Tdicdw–Tdicuw–1.5 Tdicdw6–Tdicuw7Tdicdw–Tdicuw+1.5 ns
IP32 Write high pulse width Twh Tdicpw–Tdicdw+
Tdicuw–1.5
Tdicpw–Tdicdw+
Tdicuw
Tdicpw–Tdicdw+
Tdicuw+1.5
ns
IP33 Controls setup time for read Tdcsr Tdicur–1.5 Tdicur ns
IP34 Controls hold time for read Tdchr Tdicpr–Tdicdr–1.5 Tdicpr–Tdicdr ns
IP35 Controls setup time for write Tdcsw Tdicuw–1.5 Tdicuw ns
IP28, IP27
Read Data
IP32, IP30
IP37 IP38
DISPB_PAR_RS
DISPB_DATA
DISPB_DATA
DISPB_WR
(Input)
(Output)
IP35,IP33 IP36, IP34
IP31, IP29
IP40
IP39
IP45, IP43
IP42, IP41
DISPB_RD (ENABLE_L)
DISPB_D#_CS
(READ/WRITE)
DISPB_DATA[17]
(ENABLE_H)
read point
IP46,IP44
IP47
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 77
IP36 Controls hold time for write Tdchw Tdicpw–Tdicdw–1.5 Tdicpw–Tdicdw ns
IP37 Slave device data delay8Tracc 0 Tdrp9–Tlbd10–Tdicur–1.5 ns
IP38 Slave device data hold time8Troh Tdrp–Tlbd–Tdicdr+1.5 Tdicpr–Tdicdr–1.5 ns
IP39 Write data setup time Tds Tdicdw–1.5 Tdicdw ns
IP40 Write data hold time Tdh Tdicpw–Tdicdw–1.5 Tdicpw–Tdicdw ns
IP41 Read period2Tdicpr Tdicpr–1.5 Tdicpr Tdicpr+1.5 ns
IP42 Write period3Tdicpw Tdicpw–1.5 Tdicpw Tdicpw+1.5 ns
IP43 Read down time4Tdicdr Tdicdr–1.5 Tdicdr Tdicdr+1.5 ns
IP44 Read up time5Tdicur Tdicur–1.5 Tdicur Tdicur+1.5 ns
IP45 Write down time6Tdicdw Tdicdw–1.5 Tdicdw Tdicdw+1.5 ns
IP46 Write up time7Tdicuw Tdicuw–1.5 Tdicuw Tdicuw+1.5 ns
IP47 Read time point9Tdrp Tdrp–1.5 Tdrp Tdrp+1.5 ns
1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display. These
conditions may be device specific.
2Display interface clock period value for read:
3Display interface clock period value for write:
4Display interface clock down time for read:
5Display interface clock up time for read:
6Display interface clock down time for write:
7Display interface clock up time for write:
8This parameter is a requirement to the display connected to the IPU
9Data read point
10 Loopback delay Tlbd is the cumulative propagation delay of read controls and read data. It includes an IPU output delay, a
device-level output delay, board delays, a device-level input delay, an IPU input delay. This value is device specific.
Table 50. Asynchronous Parallel Interface Timing Parameters—Access Level (continued)
ID Parameter Symbol Min. Typ.1Max. Units
Tdicpr THSP_CLK ceilDISP#_IF_CLK_PER_RD
HSP_CLK_PERIOD
----------------------------------------------------------------
=
Tdicpw THSP_CLK ceilDISP#_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------
=
Tdicdr 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_DOWN_RDHSP_CLK_PERIOD
-------------------------------------------------------------------------------
=
Tdicur 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_UP_RDHSP_CLK_PERIOD
--------------------------------------------------------------------
=
Tdicdw 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_DOWN_WRHSP_CLK_PERIOD
---------------------------------------------------------------------------------
=
Tdicuw 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_UP_WRHSP_CLK_PERIOD
----------------------------------------------------------------------
=
Tdrp THSP_CLK ceil DISP#_READ_EN
HSP_CLK_PERIOD
--------------------------------------------------
=
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
78 Freescale Semiconductor
Electrical Characteristics
The DISP#_IF_CLK_PER_WR, DISP#_IF_CLK_PER_RD, HSP_CLK_PERIOD,
DISP#_IF_CLK_DOWN_WR, DISP#_IF_CLK_UP_WR, DISP#_IF_CLK_DOWN_RD,
DISP#_IF_CLK_UP_RD and DISP#_READ_EN parameters are programmed via the
DI_DISP#_TIME_CONF_1, DI_DISP#_TIME_CONF_2 and DI_HSP_CLK_PER Registers.
4.3.15.5.3 Serial Interfaces, Functional Description
The IPU supports the following types of asynchronous serial interfaces:
3-wire (with bidirectional data line)
4-wire (with separate data input and output lines)
5-wire type 1 (with sampling RS by the serial clock)
5-wire type 2 (with sampling RS by the chip select signal)
Figure 61 depicts timing of the 3-wire serial interface. The timing images correspond to active-low
DISPB_D#_CS signal and the straight polarity of the DISPB_SD_D_CLK signal.
For this interface, a bidirectional data line is used outside the device. The IPU still uses separate input and
output data lines (IPP_IND_DISPB_SD_D and IPP_DO_DISPB_SD_D). The I/O mux should provide
joining the internal data lines to the bidirectional external line according to the IPP_OBE_DISPB_SD_D
signal provided by the IPU.
Each data transfer can be preceded by an optional preamble with programmable length and contents. The
preamble is followed by read/write (RW) and address (RS) bits. The order of the these bits is
programmable. The RW bit can be disabled. The following data can consist of one word or of a whole
burst. The interface parameters are controlled by the DI_SER_DISP1_CONF and DI_SER_DISP2_CONF
Registers.
Figure 61. 3-Wire Serial Interface Timing Diagram
Figure 62 depicts timing of the 4-wire serial interface. For this interface, there are separate input and output
data lines both inside and outside the device.
Preamble
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW RS
Input or output data
D7 D6 D5 D4 D3 D2 D1 D0
1 display IF
clock cycle
1 display IF
clock cycle
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 79
Figure 62. 4-Wire Serial Interface Timing Diagram
Figure 63 depicts timing of the 5-wire serial interface (Type 1). For this interface, a separate RS line is
added. When a burst is transmitted within single active chip select interval, the RS can be changed at
boundaries of words.
Preamble
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW RS
Output data
D7 D6 D5 D4 D3 D2 D1 D0
DISPB_SD_D
(Output)
(Input)
Preamble
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW RS
Input data
DISPB_SD_D D7 D6 D5 D4 D3 D2 D1 D0
(Output)
(Input)
Write
Read
1 display IF
clock cycle
1 display IF
clock cycle
1 display IF
clock cycle
1 display IF
clock cycle
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
80 Freescale Semiconductor
Electrical Characteristics
Figure 63. 5-Wire Serial Interface (Type 1) Timing Diagram
Preamble
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW D7 D6 D5 D4 D3 D2 D1 D0
DISPB_SD_D
(Output)
(Input)
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW
DISPB_SD_D D7 D6 D5 D4 D3 D2 D1 D0
(Output)
(Input)
Write
Read
DISPB_SER_RS
DISPB_SER_RS
1 display IF
clock cycle
1 display IF
clock cycle
Output data
1 display IF
clock cycle
1 display IF
clock cycle
Preamble
Input data
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 81
Figure 64 depicts timing of the 5-wire serial interface (Type 2). For this interface, a separate RS line is
added. When a burst is transmitted within single active chip select interval, the RS can be changed at
boundaries of words.
Figure 64. 5-Wire Serial Interface (Type 2) Timing Diagram
Preamble
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW
Output data
D7 D6 D5 D4 D3 D2 D1 D0
DISPB_SD_D
(Output)
(Input)
Preamble
DISPB_D#_CS
DISPB_SD_D_CLK
DISPB_SD_D RW
Input data
DISPB_SD_D
D7 D6 D5 D4 D3 D2 D1 D0
(Output)
(Input)
Write
Read
DISPB_SER_RS
DISPB_SER_RS
1 display IF
clock cycle
1 display IF
clock cycle
1 display IF
clock cycle
1 display IF
clock cycle
1 display IF
clock cycle
1 display IF
clock cycle
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
82 Freescale Semiconductor
Electrical Characteristics
4.3.15.5.4 Serial Interfaces, Electrical Characteristics
Figure 65 depicts timing of the serial interface. Table 51 lists the timing parameters at display access level.
Figure 65. Asynchronous Serial Interface Timing Diagram
Table 51. Asynchronous Serial Interface Timing Parameters—Access Level
ID Parameter Symbol Min. Typ.1Max. Units
IP48 Read system cycle time Tcycr Tdicpr–1.5 Tdicpr2Tdicpr+1.5 ns
IP49 Write system cycle time Tcycw Tdicpw–1.5 Tdicpw3Tdicpw+1.5 ns
IP50 Read clock low pulse width Trl Tdicdr–Tdicur–1.5 Tdicdr4–Tdicur5Tdicdr–Tdicur+1.5 ns
IP51 Read clock high pulse width Trh Tdicpr–Tdicdr+Tdicur–1.5 Tdicpr–Tdicdr+
Tdicur
Tdicpr–Tdicdr+Tdicur+1.5 ns
IP52 Write clock low pulse width Twl Tdicdw–Tdicuw–1.5 Tdicdw6–Tdicuw7Tdicdw–Tdicuw+1.5 ns
IP53 Write clock high pulse width Twh Tdicpw–Tdicdw+
Tdicuw–1.5
Tdicpw–Tdicdw+
Tdicuw
Tdicpw–Tdicdw+
Tdicuw+1.5
ns
IP54 Controls setup time for read Tdcsr Tdicur–1.5 Tdicur ns
IP55 Controls hold time for read Tdchr Tdicpr–Tdicdr–1.5 Tdicpr–Tdicdr ns
IP49, IP48
Read Data
IP51, IP53
IP58 IP59
DISPB_SER_RS
DISPB_DATA
DISPB_DATA
(Input)
(Output)
IP56,IP54 IP57, IP55
IP50, IP52
IP61
IP60
IP67,IP65
IP47
IP64, IP66
IP62, IP63
DISPB_SD_D_CLK
read point
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 83
IP56 Controls setup time for write Tdcsw Tdicuw–1.5 Tdicuw ns
IP57 Controls hold time for write Tdchw Tdicpw–Tdicdw–1.5 Tdicpw–Tdicdw ns
IP58 Slave device data delay8Tracc 0 Tdrp9–Tlbd10–Tdicur–1.5 ns
IP59 Slave device data hold time8Troh Tdrp–Tlbd–Tdicdr+1.5 Tdicpr–Tdicdr–1.5 ns
IP60 Write data setup time Tds Tdicdw–1.5 Tdicdw ns
IP61 Write data hold time Tdh Tdicpw–Tdicdw–1.5 Tdicpw–Tdicdw ns
IP62 Read period2Tdicpr Tdicpr–1.5 Tdicpr Tdicpr+1.5 ns
IP63 Write period3Tdicpw Tdicpw–1.5 Tdicpw Tdicpw+1.5 ns
IP64 Read down time4Tdicdr Tdicdr–1.5 Tdicdr Tdicdr+1.5 ns
IP65 Read up time5Tdicur Tdicur–1.5 Tdicur Tdicur+1.5 ns
IP66 Write down time6Tdicdw Tdicdw–1.5 Tdicdw Tdicdw+1.5 ns
IP67 Write up time7Tdicuw Tdicuw–1.5 Tdicuw Tdicuw+1.5 ns
IP68 Read time point9Tdrp Tdrp–1.5 Tdrp Tdrp+1.5 ns
1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display. These
conditions may be device specific.
2Display interface clock period value for read:
3Display interface clock period value for write:
4Display interface clock down time for read:
5Display interface clock up time for read:
6Display interface clock down time for write:
7Display interface clock up time for write:
8This parameter is a requirement to the display connected to the IPU.
9Data read point:
10 Loopback delay Tlbd is the cumulative propagation delay of read controls and read data. It includes an IPU output delay, a
device-level output delay, board delays, a device-level input delay, an IPU input delay. This value is device specific.
Table 51. Asynchronous Serial Interface Timing Parameters—Access Level (continued)
ID Parameter Symbol Min. Typ.1Max. Units
Tdicpr THSP_CLK ceilDISP#_IF_CLK_PER_RD
HSP_CLK_PERIOD
----------------------------------------------------------------
=
Tdicpw THSP_CLK ceilDISP#_IF_CLK_PER_WR
HSP_CLK_PERIOD
------------------------------------------------------------------
=
Tdicdr 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_DOWN_RDHSP_CLK_PERIOD
-------------------------------------------------------------------------------
=
Tdicur 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_UP_RDHSP_CLK_PERIOD
--------------------------------------------------------------------
=
Tdicdw 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_DOWN_WRHSP_CLK_PERIOD
---------------------------------------------------------------------------------
=
Tdicuw 1
2
---THSP_CLK ceil 2 DISP#_IF_CLK_UP_WRHSP_CLK_PERIOD
----------------------------------------------------------------------
=
Tdrp THSP_CLK ceil DISP#_READ_EN
HSP_CLK_PERIOD
--------------------------------------------------
=
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
84 Freescale Semiconductor
Electrical Characteristics
The DISP#_IF_CLK_PER_WR, DISP#_IF_CLK_PER_RD, HSP_CLK_PERIOD,
DISP#_IF_CLK_DOWN_WR, DISP#_IF_CLK_UP_WR, DISP#_IF_CLK_DOWN_RD,
DISP#_IF_CLK_UP_RD and DISP#_READ_EN parameters are programmed via the
DI_DISP#_TIME_CONF_1, DI_DISP#_TIME_CONF_2 and DI_HSP_CLK_PER Registers.
4.3.16 Memory Stick Host Controller (MSHC)
Figure 66, Figure 67, and Figure 68 depict the MSHC timings, and Table 52 and Table 53 list the timing
parameters.
Figure 66. MSHC_CLK Timing Diagram
Figure 67. Transfer Operation Timing Diagram (Serial)
tSCLKwh tSCLKwl
tSCLKc
tSCLKr tSCLKf
MSHC_SCLK
tSCLKc
MSHC_SCLK
tBSsu tBSh
tDsu tDh
MSHC_BS
MSHC_DATA
(Output)
tDd
MSHC_DATA
(Intput)
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 85
Figure 68. Transfer Operation Timing Diagram (Parallel)
NOTE
The Memory Stick Host Controller is designed to meet the timing
requirements per Sony's Memory Stick Pro Format Specifications document.
Tables in this section details the specifications requirements for parallel and
serial modes, and not the MCIMX31 timing.
Table 52. Serial Interface Timing Parameters1
1Timing is guaranteed for NVCC from 2.7 through 3.1 V and up to a maximum overdrive NVCC of 3.3 V. See
NVCC restrictions described in Table 8, "Operating Ranges," on page 13.
Signal Parameter Symbol
Standards
Unit
Min. Max.
MSHC_SCLK
Cycle tSCLKc 50 ns
H pulse length tSCLKwh 15 ns
L pulse length tSCLKwl 15 ns
Rise time tSCLKr 10 ns
Fall time tSCLKf 10 ns
MSHC_BS Setup time tBSsu 5 ns
Hold time tBSh 5 ns
MSHC_DATA
Setup time tDsu 5 ns
Hold time tDh 5 ns
Output delay time tDd 15 ns
tSCLKc
MSHC_SCLK
tBSsu tBSh
tDsu tDh
MSHC_BS
MSHC_DATA
(Output)
tDd
MSHC_DATA
(Intput)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
86 Freescale Semiconductor
Electrical Characteristics
4.3.17 Personal Computer Memory Card International Association
(PCMCIA)
Figure 69 and Figure 70 depict the timings pertaining to the PCMCIA module, each of which is an
example of one clock of strobe set-up time and one clock of strobe hold time. Table 54 lists the timing
parameters.
Table 53. Parallel Interface Timing Parameters1
1Timing is guaranteed for NVCC from 2.7 through 3.1 V and up to a maximum overdrive NVCC of 3.3 V. See NVCC restrictions
described in Table 8, "Operating Ranges," on page 13.
Signal Parameter Symbol
Standards
Unit
Min Max
MSHC_SCLK
Cycle tSCLKc 25 ns
H pulse length tSCLKwh 5 ns
L pulse length tSCLKwl 5 ns
Rise time tSCLKr 10 ns
Fall time tSCLKf 10 ns
MSHC_BS
Setup time tBSsu 8 ns
Hold time tBSh 1 ns
MSHC_DATA
Setup time tDsu 8 ns
Hold time tDh 1 ns
Output delay time tDd 15 ns
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 87
Figure 69. Write Accesses Timing Diagram—PSHT=1, PSST=1
HCLK
HADDR ADDR 1
CONTROL CONTROL 1
HWDATA DATA write 1
HREADY
HRESP OKAY OKAY OKAY
A[25:0] ADDR 1
D[15:0] DATA write 1
WAIT
REG REG
OE/WE/IORD/IOWR
CE1/CE2
RW
POE
PSST PSHT
PSL
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
88 Freescale Semiconductor
Electrical Characteristics
Figure 70. Read Accesses Timing Diagram—PSHT=1, PSST=1
4.3.18 PWM Electrical Specifications
This section describes the electrical information of the PWM. The PWM can be programmed to select one
of three clock signals as its source frequency. The selected clock signal is passed through a prescaler before
being input to the counter. The output is available at the pulse-width modulator output (PWMO) external
pin.
Table 54. PCMCIA Write and Read Timing Parameters
Symbol Parameter Min Max Unit
PSHT PCMCIA strobe hold time 0 63 clock
PSST PCMCIA strobe set up time 1 63 clock
PSL PCMCIA strobe length 1 128 clock
HCLK
HADDR ADDR 1
CONTROL CONTROL 1
RWDATA DATA read 1
HREADY
HRESP OKAY OKAY OKAY
A[25:0] ADDR 1
D[15:0]
WAIT
REG REG
OE/WE/IORD/IOWR
CE1/CE2
RW
POE
PSST PSHT
PSL
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 89
4.3.18.1 PWM Timing
Figure 71 depicts the timing of the PWM, and Table 55 lists the PWM timing characteristics.
Figure 71. PWM Timing
4.3.19 SDHC Electrical Specifications
This section describes the electrical information of the SDHC.
4.3.19.1 SDHC Timing
Figure 72 depicts the timings of the SDHC, and Table 56 lists the timing parameters.
Table 55. PWM Output Timing Parameters
ID Parameter Min Max Unit
1 System CLK frequency1
1CL of PWMO = 30 pF
0 ipg_clk MHz
2a Clock high time 12.29 ns
2b Clock low time 9.91 ns
3a Clock fall time 0.5 ns
3b Clock rise time 0.5 ns
4a Output delay time 9.37 ns
4b Output setup time 8.71 ns
4a
System Clock
2a 1
PWM Output
2b
3a
3b
4b
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
90 Freescale Semiconductor
Electrical Characteristics
Figure 72. SDHC Timing Diagram
4.3.20 SIM Electrical Specifications
Each SIM card interface consist of a total of 12 pins (for 2 separate ports of 6 pins each. Mostly one port
with 5 pins is used).
Table 56. SDHC Interface Timing Parameters
ID Parameter Symbol Min Max Unit
Card Input Clock
SD1 Clock Frequency (Low Speed) fPP1
1In low speed mode, card clock must be lower than 400 kHz, voltage ranges from 2.7 V–3.3 V.
0 400 kHz
Clock Frequency (SD/SDIO Full Speed) fPP2
2In normal data transfer mode for SD/SDIO card, clock frequency can be any value between 0 MHz–25 MHz.
025MHz
Clock Frequency (MMC Full Speed) fPP3
3In normal data transfer mode for MMC card, clock frequency can be any value between 0 MHz–20 MHz.
020MHz
Clock Frequency (Identification Mode) fOD4
4In card identification mode, card clock must be 100 kHz–400 kHz, voltage ranges from 2.7 V–3.3 V.
100 400 kHz
SD2 Clock Low Time tWL 10 ns
SD3 Clock High Time tWH 10 ns
SD4 Clock Rise Time tTLH —10ns
SD5 Clock Fall Time tTHL —10ns
SDHC Output/Card Inputs CMD, DAT (Reference to CLK)
SD6 SDHC output delay tODL –6.5 3 ns
SDHC Input/Card Outputs CMD, DAT (Reference to CLK)
SD7 SDHC input setup tIS —18.5ns
SD8 SDHC input hold tIH –11.5 ns
SD1
SD5
SD7
SD4
SD8
CMD Output from SDHC to card
DATA[3:0]
Input to SDHC
CLK
SD2
SD6
SD3
CMD
DATA[3:0]
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 91
The interface is meant to be used with synchronous SIM cards. This means that the SIM module provides
a clock for the SIM card to use. The frequency of this clock is normally 372 times the data rate on the
TX/RX pins, however SIM module can work with CLK equal to 16 times the data rate on TX/RX pins.
There is no timing relationship between the clock and the data. The clock that the SIM module provides
to the aim card will be used by the SIM card to recover the clock from the data much like a standard UART.
All six (or 5 in case bi-directional TXRX is used) of the pins for each half of the SIM module are
asynchronous to each other.
There are no required timing relationships between the signals in normal mode, but there are some in two
specific cases: reset and power down sequences.
4.3.20.1 General Timing Requirements
Figure 73 shows the timing of the SIM module, and Figure 57 lists the timing parameters.
Figure 73. SIM Clock Timing Diagram
4.3.20.2 Reset Sequence
4.3.20.2.1 Cards with Internal Reset
The sequence of reset for this kind of SIM Cards is as follows (see Figure 74):
After powerup, the clock signal is enabled on SGCLK (time T0)
After 200 clock cycles, RX must be high.
The card must send a response on RX acknowledging the reset between 400 and 40000 clock cycles
after T0.
Table 57. SIM Timing Specification—High Drive Strength
Num Description Symbol Min Max Unit
1 SIM Clock Frequency (CLK)1
150% duty cycle clock
Sfreq 0.01 5 (Some new cards
may reach 10)
MHz
2 SIM CLK Rise Time 2
2With C = 50pF
Srise —20ns
3 SIM CLK Fall Time 3
3With C = 50pF
Sfall —20ns
4 SIM Input Transition Time (RX, SIMPD) Strans —25ns
CLK
SriseSfall
1/Sfreq
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
92 Freescale Semiconductor
Electrical Characteristics
Figure 74. Internal-Reset Card Reset Sequence
4.3.20.2.2 Cards with Active Low Reset
The sequence of reset for this kind of card is as follows (see Figure 75):
1. After powerup, the clock signal is enabled on CLK (time T0)
2. After 200 clock cycles, RX must be high.
3. RST must remain Low for at least 40000 clock cycles after T0 (no response is to be received on
RX during those 40000 clock cycles)
4. RST is set High (time T1)
5. RST must remain High for at least 40000 clock cycles after T1 and a response must be received
on RX between 400 and 40000 clock cycles after T1.
Figure 75. Active-Low-Reset Card Reset Sequence
SVEN
CLK
RX
2
T0
1
response
2
1
< 200 clock cycles
< 40000 clock cycles400 clock cycles <
SVEN
CLK
RX
2
T0
1
response
RST
T1
1
2
< 200 clock cycles
< 40000 clock cycles400 clock cycles <
3
3
3
400000 clock cycles <
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 93
4.3.20.3 Power Down Sequence
Power down sequence for SIM interface is as follows:
1. SIMPD port detects the removal of the SIM Card
2. RST goes Low
3. CLK goes Low
4. TX goes Low
5. VEN goes Low
Each of this steps is done in one CKIL period (usually 32 kHz). Power down can be started because of a
SIM Card removal detection or launched by the processor. Figure 76 and Table 58 show the usual timing
requirements for this sequence, with Fckil = CKIL frequency value.
Figure 76. SmartCard Interface Power Down AC Timing
Table 58. Timing Requirements for Power Down Sequence
Num Description Symbol Min Max Unit
1 SIM reset to SIM clock stop Srst2clk 0.9*1/FCKIL 0.8 µs
2 SIM reset to SIM TX data low Srst2dat 1.8*1/FCKIL 1.2 µs
3 SIM reset to SIM Voltage Enable Low Srst2ven 2.7*1/FCKIL 1.8 µs
4 SIM Presence Detect to SIM reset Low Spd2rst 0.9*1/FCKIL 25 ns
SIMPD
RST
CLK
DATA_TX
SVEN
Srst2clk
Srst2dat
Srst2ven
Spd2rst
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
94 Freescale Semiconductor
Electrical Characteristics
4.3.21 SJC Electrical Specifications
This section details the electrical characteristics for the SJC module. Figure 77 depicts the SJC test clock
input timing. Figure 78 depicts the SJC boundary scan timing, Figure 79 depicts the SJC test access port,
Figure 80 depicts the SJC TRST timing, and Table 59 lists the SJC timing parameters.
Figure 77. Test Clock Input Timing Diagram
Figure 78. Boundary Scan (JTAG) Timing Diagram
TCK
(Input) VM VM
VIH
VIL
SJ1
SJ2 SJ2
SJ3
SJ3
TCK
(Input)
Data
Inputs
Data
Outputs
Data
Outputs
Data
Outputs
VIH
VIL
Input Data Valid
Output Data Valid
Output Data Valid
SJ4 SJ5
SJ6
SJ7
SJ6
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 95
Figure 79. Test Access Port Timing Diagram
Figure 80. TRST Timing Diagram
Table 59. SJC Timing Parameters
ID Parameter
All Frequencies
Unit
Min Max
SJ1 TCK cycle time 1001—ns
SJ2 TCK clock pulse width measured at VM240 ns
SJ3 TCK rise and fall times 3 ns
SJ4 Boundary scan input data set-up time 10 ns
SJ5 Boundary scan input data hold time 50 ns
SJ6 TCK low to output data valid 50 ns
SJ7 TCK low to output high impedance 50 ns
SJ8 TMS, TDI data set-up time 10 ns
SJ9 TMS, TDI data hold time 50 ns
SJ10 TCK low to TDO data valid 44 ns
TCK
(Input)
TDI
(Input)
TDO
(Output)
TDO
(Output)
TDO
(Output)
VIH
VIL
Input Data Valid
Output Data Valid
Output Data Valid
TMS
SJ8 SJ9
SJ10
SJ11
SJ10
TCK
(Input)
TRST
(Input)
SJ13
SJ12
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
96 Freescale Semiconductor
Electrical Characteristics
4.3.22 SSI Electrical Specifications
This section describes the electrical information of SSI. Note the following pertaining to timing
information:
All the timings for the SSI are given for a non-inverted serial clock polarity (TSCKP/RSCKP = 0)
and a non-inverted frame sync (TFSI/RFSI = 0). If the polarity of the clock and/or the frame sync
have been inverted, all the timing remains valid by inverting the clock signal STCK/SRCK and/or
the frame sync STFS/SRFS shown in the tables and in the figures.
All timings are on AUDMUX signals when SSI is being used for data transfer.
“Tx” and “Rx” refer to the Transmit and Receive sections of the SSI.
For internal Frame Sync operation using external clock, the FS timing will be same as that of Tx
Data (for example, during AC97 mode of operation).
4.3.22.1 SSI Transmitter Timing with Internal Clock
Figure 81 depicts the SSI transmitter timing with internal clock, and Table 60 lists the timing parameters.
SJ11 TCK low to TDO high impedance 44 ns
SJ12 TRST assert time 100 ns
SJ13 TRST set-up time to TCK low 40 ns
1On cases where SDMA TAP is put in the chain, the max TCK frequency is limited by max ratio of 1:8 of SDMA core frequency
to TCK limitation. This implies max frequency of 8.25 MHz (or 121.2 ns) for 66 MHz IPG clock.
2VM - mid point voltage
Table 59. SJC Timing Parameters (continued)
ID Parameter
All Frequencies
Unit
Min Max
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 97
Figure 81. SSI Transmitter with Internal Clock Timing Diagram
SS19
AD1_TXC
AD1_TXFS (bl)
AD1_TXFS (wl)
SS1
AD1_TXD
AD1_RXD
SS2 SS4
SS3
SS5
SS6 SS8
SS10 SS12
SS14
SS18
SS15
SS17
SS16
SS43
SS42
Note: SRXD Input in Synchronous mode only
(Output)
(Output)
(Output)
(Output)
(Input)
SS19
DAM1_T_CLK
DAM1_T_FS (bl)
DAM1_T_FS (wl)
SS1
DAM1_TXD
DAM1_RXD
SS2 SS4
SS3
SS5
SS6 SS8
SS10 SS12
SS14
SS18
SS15
SS17SS16
SS42
Note: SRXD Input in Synchronous mode only
(Output)
(Output)
(Output)
(Output)
(Input)
SS43
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
98 Freescale Semiconductor
Electrical Characteristics
Table 60. SSI Transmitter with Internal Clock Timing Parameters
ID Parameter Min Max Unit
Internal Clock Operation
SS1 (Tx/Rx) CK clock period 81.4 ns
SS2 (Tx/Rx) CK clock high period 36.0 ns
SS3 (Tx/Rx) CK clock rise time 6 ns
SS4 (Tx/Rx) CK clock low period 36.0 ns
SS5 (Tx/Rx) CK clock fall time 6 ns
SS6 (Tx) CK high to FS (bl) high 15.0 ns
SS8 (Tx) CK high to FS (bl) low 15.0 ns
SS10 (Tx) CK high to FS (wl) high 15.0 ns
SS12 (Tx) CK high to FS (wl) low 15.0 ns
SS14 (Tx/Rx) Internal FS rise time 6 ns
SS15 (Tx/Rx) Internal FS fall time 6 ns
SS16 (Tx) CK high to STXD valid from high impedance 15.0 ns
SS17 (Tx) CK high to STXD high/low 15.0 ns
SS18 (Tx) CK high to STXD high impedance 15.0 ns
SS19 STXD rise/fall time 6 ns
Synchronous Internal Clock Operation
SS42 SRXD setup before (Tx) CK falling 10.0 ns
SS43 SRXD hold after (Tx) CK falling 0 ns
SS52 Loading — 25 pF
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 99
4.3.22.2 SSI Receiver Timing with Internal Clock
Figure 82 depicts the SSI receiver timing with internal clock, and Table 61 lists the timing parameters.
Figure 82. SSI Receiver with Internal Clock Timing Diagram
SS50
SS48
AD1_TXC
AD1_TXFS (bl)
AD1_TXFS (wl)
AD1_RXD
AD1_RXC
SS1
SS4SS2
SS51
SS20
SS21
SS49
SS7 SS9
SS11 SS13
SS47
(Output)
(Output)
(Output)
(Input)
(Output)
SS3
SS5
SS50
SS48
DAM1_T_CLK
DAM1_T_FS (bl)
DAM1_T_FS (wl)
DAM1_RXD
DAM1_R_CLK
SS3
SS1
SS4
SS2
SS5
SS51
SS20
SS21
SS49
SS7 SS9
SS11 SS13
SS47
(Output)
(Output)
(Output)
(Input)
(Output)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
100 Freescale Semiconductor
Electrical Characteristics
Table 61. SSI Receiver with Internal Clock Timing Parameters
ID Parameter Min Max Unit
Internal Clock Operation
SS1 (Tx/Rx) CK clock period 81.4 ns
SS2 (Tx/Rx) CK clock high period 36.0 ns
SS3 (Tx/Rx) CK clock rise time 6 ns
SS4 (Tx/Rx) CK clock low period 36.0 ns
SS5 (Tx/Rx) CK clock fall time 6 ns
SS7 (Rx) CK high to FS (bl) high 15.0 ns
SS9 (Rx) CK high to FS (bl) low 15.0 ns
SS11 (Rx) CK high to FS (wl) high 15.0 ns
SS13 (Rx) CK high to FS (wl) low 15.0 ns
SS20 SRXD setup time before (Rx) CK low 10.0 ns
SS21 SRXD hold time after (Rx) CK low 0 ns
Oversampling Clock Operation
SS47 Oversampling clock period 15.04 ns
SS48 Oversampling clock high period 6 ns
SS49 Oversampling clock rise time 3 ns
SS50 Oversampling clock low period 6 ns
SS51 Oversampling clock fall time 3 ns
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 101
4.3.22.3 SSI Transmitter Timing with External Clock
Figure 83 depicts the SSI transmitter timing with external clock, and Table 62 lists the timing parameters.
Figure 83. SSI Transmitter with External Clock Timing Diagram
SS45
SS33
SS24
SS26
SS25
SS23
AD1_TXC
AD1_TXFS (bl)
AD1_TXFS (wl)
AD1_TXD
AD1_RXD
Note: SRXD Input in Synchronous mode only
SS31
SS29
SS27
SS22
SS44
SS39
SS38
SS37
SS46
(Input)
(Input)
(Input)
(Output)
(Input)
SS45
SS33
SS24
SS26
SS25
SS23
DAM1_T_CLK
DAM1_T_FS (bl)
DAM1_T_FS (wl)
DAM1_TXD
DAM1_RXD
Note: SRXD Input in Synchronous mode only
SS31
SS29
SS27
SS22
SS44
SS39
SS38
SS37
SS46
(Input)
(Input)
(Input)
(Output)
(Input)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
102 Freescale Semiconductor
Electrical Characteristics
Table 62. SSI Transmitter with External Clock Timing Parameters
ID Parameter Min Max Unit
External Clock Operation
SS22 (Tx/Rx) CK clock period 81.4 ns
SS23 (Tx/Rx) CK clock high period 36.0 ns
SS24 (Tx/Rx) CK clock rise time 6.0 ns
SS25 (Tx/Rx) CK clock low period 36.0 ns
SS26 (Tx/Rx) CK clock fall time 6.0 ns
SS27 (Tx) CK high to FS (bl) high –10.0 15.0 ns
SS29 (Tx) CK high to FS (bl) low 10.0 ns
SS31 (Tx) CK high to FS (wl) high –10.0 15.0 ns
SS33 (Tx) CK high to FS (wl) low 10.0 ns
SS37 (Tx) CK high to STXD valid from high impedance 15.0 ns
SS38 (Tx) CK high to STXD high/low 15.0 ns
SS39 (Tx) CK high to STXD high impedance 15.0 ns
Synchronous External Clock Operation
SS44 SRXD setup before (Tx) CK falling 10.0 ns
SS45 SRXD hold after (Tx) CK falling 2.0 ns
SS46 SRXD rise/fall time 6.0 ns
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 103
4.3.22.4 SSI Receiver Timing with External Clock
Figure 84 depicts the SSI receiver timing with external clock, and Table 63 lists the timing parameters.
Figure 84. SSI Receiver with External Clock Timing Diagram
Table 63. SSI Receiver with External Clock Timing Parameters
ID Parameter Min Max Unit
External Clock Operation
SS22 (Tx/Rx) CK clock period 81.4 ns
SS23 (Tx/Rx) CK clock high period 36.0 ns
SS24 (Tx/Rx) CK clock rise time 6.0 ns
SS25 (Tx/Rx) CK clock low period 36.0 ns
SS26 (Tx/Rx) CK clock fall time 6.0 ns
SS24
SS34
SS35
SS30
SS28
SS26
SS25
SS23
AD1_TXC
AD1_TXFS (bl)
AD1_TXFS (wl)
AD1_RXD
SS40
SS22
SS32
SS36
SS41
(Input)
(Input)
(Input)
(Input)
SS24
SS34
SS35
SS30
SS28
SS26
SS25
SS23
DAM1_T_CLK
DAM1_T_FS (bl)
DAM1_T_FS (wl)
DAM1_RXD
SS40
SS22
SS32
SS36
SS41
(Input)
(Input)
(Input)
(Input)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
104 Freescale Semiconductor
Electrical Characteristics
4.3.23 USB Electrical Specifications
This section describes the electrical information of the USBOTG port. The OTG port supports both serial
and parallel interfaces.
The high speed (HS) interface is supported via the ULPI (Ultra Low Pin Count Interface). Figure 85
depicts the USB ULPI timing diagram, and Table 64 lists the timing parameters.
Figure 85. USB ULPI Interface Timing Diagram
SS28 (Rx) CK high to FS (bl) high –10.0 15.0 ns
SS30 (Rx) CK high to FS (bl) low 10.0 ns
SS32 (Rx) CK high to FS (wl) high –10.0 15.0 ns
SS34 (Rx) CK high to FS (wl) low 10.0 ns
SS35 (Tx/Rx) External FS rise time 6.0 ns
SS36 (Tx/Rx) External FS fall time 6.0 ns
SS40 SRXD setup time before (Rx) CK low 10.0 ns
SS41 SRXD hold time after (Rx) CK low 2.0 ns
Table 64. USB ULPI Interface Timing Specification1
1Timing parameters are given as viewed by transceiver side.
Parameter Symbol Min Max Units
Setup time (control in, 8-bit data in) TSC, TSD 6— ns
Hold time (control in, 8-bit data in) THC, THD 0 — ns
Output delay (control out, 8-bit data out) TDC, TDD —9 ns
Table 63. SSI Receiver with External Clock Timing Parameters (continued)
ID Parameter Min Max Unit
Clock
Control out (stp)
Data out
Control in (dir, nxt)
Data in
TDD
TDC TDC
TSC
TSD THD
THC
Package Information and Pinout
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 105
5 Package Information and Pinout
This section includes the contact assignment information and mechanical package drawing for the
MCIMX31.
5.1 MAPBGA Production Package—457 14 x 14 mm, 0.5 mm Pitch
This section contains the outline drawing, signal assignment map (see Section 8, “Revision History,”
Table 70 for the 0.5 mm 14 × 14 MAPBGA signal assignments), and MAPBGA ground/power ID by ball
grid location for the 457 14 x 14 mm, 0.5 mm pitch package.
5.1.1 Production Package Outline Drawing–14 x 14 mm 0.5 mm
Figure 86. Production Package: Case 1581—0.5 mm Pitch
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
106 Freescale Semiconductor
Package Information and Pinout
5.1.2 MAPBGA Signal Assignment–14 × 14 mm 0.5 mm
See Section 8, “Revision History,” Figure 70 for the 0.5 mm 14 × 14 MAPBGA signal assignments.
5.1.3 Connection Tables–14 x 14 mm 0.5 mm
Table 65 shows the device connection list for power and ground, alpha-sorted. Table 66 shows the device
connection list for signals.
5.1.3.1 Ground and Power ID Locations–14 x 14 mm 0.5 mm
Table 65. 14 x 14 MAPBGA Ground/Power ID by Ball Grid Location
GND/PWR ID Ball Location
FGND AB24
FUSE_VDD AC24
FVCC AA24
GND A1, A2, A25, A26, B1, B2, B25, B26, C1, C2, C24, C25, C26, D1, D25, E22, E24, F21, L12, M11, M12, M13, M14,
M15, M16, N12, N13, N14, N15, N16, P12, P13, P14, P15, P16, R12, R13, R14, R15, R16, T12, T13, V17, AC2,
AC26, AD1, AD2, AD24, AD25, AD26, AE1, AE2, AE24, AE25, AE26, AF1, AF2, AF25, AF26
IOQVDD Y6
MGND T15
MVCC V15
NVCC1 G19, G21, K18
NVCC2 Y17, Y18, Y19, Y20
NVCC3 L9, M9, N11
NVCC4 L18, L19
NVCC5 E5, F6, G7
NVCC6 J15, J16, K15
NVCC7 N18, P18, R18, T18
NVCC8 J12, J13
NVCC9 J17
NVCC10 P9, P11, R11, T11
NVCC21 Y14, Y15, Y16
NVCC22 W7, Y7, Y8, Y9, Y10, Y11, Y12, Y13, AA6
QVCC J14, L13, L14, L15, L16, M18, U18, V10, V11, V12, V13
QVCC1 J10, J11, K9, L11
QVCC4 N9, R9, T9, U9
SGND T14
SVCC V14
UVCC V16
UGND T16
Package Information and Pinout
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 107
5.1.3.2 BGA Signal ID by Ball Grid Location–14 x 14 0.5 mm
Table 66 shows the device connection list for signals only, alpha-sorted by signal identification.
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location
Signal ID Ball Location Signal ID Ball Location
A0 AD6 CKIL H21
A1 AF5 CLKO C23
A10 AF18 CLKSS G26
A11 AC3 COMPARE G18
A12 AD3 CONTRAST R24
A13 AD4 CS0 AE23
A14 AF17 CS1 AF23
A15 AF16 CS2 AE21
A16 AF15 CS3 AD22
A17 AF14 CS4 AF24
A18 AF13 CS5 AF22
A19 AF12 CSI_D10 M24
A2 AB5 CSI_D11 L26
A20 AF11 CSI_D12 M21
A21 AF10 CSI_D13 M25
A22 AF9 CSI_D14 M20
A23 AF8 CSI_D15 M26
A24 AF7 CSI_D4 L21
A25 AF6 CSI_D5 K25
A3 AE4 CSI_D6 L24
A4 AA3 CSI_D7 K26
A5 AF4 CSI_D8 L20
A6 AB3 CSI_D9 L25
A7 AE3 CSI_HSYNC K20
A8 AD5 CSI_MCLK K24
A9 AF3 CSI_PIXCLK J26
ATA_CS0 J6 CSI_VSYNC J25
ATA_CS1 F2 CSPI1_MISO P7
ATA_DIOR E2 CSPI1_MOSI P2
ATA_DIOW H6 CSPI1_SCLK N2
ATA_DMACK F1 CSPI1_SPI_RDY N3
ATA _ R E S E T H3 CSPI1_SS0 P3
BATT_LINE F7 CSPI1_SS1 P1
BCLK AB26 CSPI1_SS2 P6
BOOT_MODE0 F20 CSPI2_MISO A4
BOOT_MODE1 C21 CSPI2_MOSI E3
BOOT_MODE2 D24 CSPI2_SCLK C7
BOOT_MODE3 C22 CSPI2_SPI_RDY B6
BOOT_MODE4 D26 CSPI2_SS0 B5
CAPTURE A22 CSPI2_SS1 C6
CAS AD20 CSPI2_SS2 A5
CE_CONTROL A14 CSPI3_MISO G3
CKIH F24 CSPI3_MOSI D2
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
108 Freescale Semiconductor
Package Information and Pinout
CSPI3_SCLK E1 GPIO1_3 F25
CSPI3_SPI_RDY G6 GPIO1_4 F19
CTS1 B11 GPIO1_5 (PWR RDY) B24
CTS2 G13 GPIO1_6 A23
D0 AB2 GPIO3_0 K21
D1 Y3 GPIO3_1 H26
D10 Y1 HSYNC N25
D11 U7 I2C_CLK J24
D12 W2 I2C_DAT H25
D13 V3 IOIS16 J3
D14 W1 KEY_COL0 C15
D15 U6 KEY_COL1 B17
D2 AB1 KEY_COL2 G15
D3 W6 KEY_COL3 A17
D3_CLS R20 KEY_COL4 C16
D3_REV T26 KEY_COL5 B18
D3_SPL U25 KEY_COL6 F15
D4 AA2 KEY_COL7 A18
D5 V7 KEY_ROW0 F13
D6 AA1 KEY_ROW1 B15
D7 W3 KEY_ROW2 C14
D8 Y2 KEY_ROW3 A15
D9 V6 KEY_ROW4 G14
DCD_DCE1 B12 KEY_ROW5 B16
DCD_DTE1 B13 KEY_ROW6 F14
DE C18 KEY_ROW7 A16
DQM0 AE19 L2PG See VPG1
DQM1 AD19 LBA AE22
DQM2 AA20 LCS0 P26
DQM3 AE18 LCS1 P21
DRDY0 N26 LD0 T24
DSR_DCE1 A11 LD1 U26
DSR_DTE1 A12 LD10 V24
DTR_DCE1 C11 LD11 Y25
DTR_DCE2 F12 LD12 Y26
DTR_DTE1 C12 LD13 V21
DVFS0 E25 LD14 AA25
DVFS1 G24 LD15 W24
EB0 W21 LD16 AA26
EB1 Y24 LD17 V20
ECB AD23 LD2 T21
FPSHIFT N21 LD3 V25
GPIO1_0 F18 LD4 T20
GPIO1_1 B23 LD5 V26
GPIO1_2 C20 LD6 U24
LD7 W25 SCK6 T2
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location (continued)
Signal ID Ball Location Signal ID Ball Location
Package Information and Pinout
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 109
LD8 U21 SCLK0 B22
LD9 W26 SD_D_CLK P24
M_GRANT Y21 SD_D_I N20
M_REQUEST AC25 SD_D_IO P25
MA10 AC1 SD0 AD18
MCUPG See VPG0 SD1 AE17
NFALE V1 SD1_CLK M7
NFCE T6 SD1_CMD L2
NFCLE U3 SD1_DATA0 M6
NFRB U1 SD1_DATA1 L1
NFRE V2 SD1_DATA2 L3
NFWE T7 SD1_DATA3 K2
NFWP U2 SD10 AE15
OE AB25 SD11 AE14
PAR_RS R21 SD12 AD14
PC_BVD1 H2 SD13 AA14
PC_BVD2 K6 SD14 AE13
PC_CD1 L7 SD15 AD13
PC_CD2 K1 SD16 AA13
PC_POE J7 SD17 AD12
PC_PWRON K3 SD18 AA12
PC_READY J2 SD19 AE11
PC_RST H1 SD2 AA19
PC_RW G2 SD20 AE10
PC_VS1 J1 SD21 AA11
PC_VS2 K7 SD22 AE9
PC_WAIT L6 SD23 AA10
POR H24 SD24 AE8
POWER_FAIL E26 SD25 AD10
PWMO G1 SD26 AE7
RAS AF19 SD27 AA9
READ P20 SD28 AA8
RESET_IN J21 SD29 AD9
RI_DCE1 F11 SD3 AA18
RI_DTE1 G12 SD30 AE6
RTCK C17 SD31 AA7
RTS1 G11 SD4 AD17
RTS2 B14 SD5 AA17
RW AB22 SD6 AE16
RXD1 A10 SD7 AA16
RXD2 A13 SD8 AD15
SCK3 R2 SD9 AA15
SCK4 C4 SDBA0 AD7
SCK5 D3 SDBA1 AE5
SDCKE0 AD21 TRSTB B20
SDCKE1 AF21 TTM_PAD U20
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location (continued)
Signal ID Ball Location Signal ID Ball Location
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
110 Freescale Semiconductor
Package Information and Pinout
SDCLK AA21 TXD1 F10
SDCLK AE20 TXD2 C13
SDQS0 AD16 USB_BYP A9
SDQS1 AE12 USB_OC C10
SDQS2 AD11 USB_PWR B10
SDQS3 AD8 USBH2_CLK N1
SDWE AF20 USBH2_DATA0 M1
SER_RS T25 USBH2_DATA1 M3
SFS3 R6 USBH2_DIR N7
SFS4 F3 USBH2_NXT N6
SFS5 A3 USBH2_STP M2
SFS6 T3 USBOTG_CLK G10
SIMPD0 G17 USBOTG_DATA0 F9
SJC_MOD A20 USBOTG_DATA1 B8
SRST0 C19 USBOTG_DATA2 G9
SRX0 B21 USBOTG_DATA3 A7
SRXD3 R3 USBOTG_DATA4 C8
SRXD4 C3 USBOTG_DATA5 B7
SRXD5 B4 USBOTG_DATA6 F8
SRXD6 R7 USBOTG_DATA7 A6
STX0 F17 USBOTG_DIR B9
STXD3 R1 USBOTG_NXT A8
STXD4 B3 USBOTG_STP C9
STXD5 C5 VPG0 G25
STXD6 T1 VPG1 J20
SVEN0 A21 VSTBY F26
TCK B19 VSYNC0 N24
TDI F16 VSYNC3 R26
TDO A19 WATCHDOG_RST A24
TMS G16 WRITE R25
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location (continued)
Signal ID Ball Location Signal ID Ball Location
Package Information and Pinout
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 111
5.2 MAPBGA Production Package—473 19 x 19 mm, 0.8 mm Pitch
This section contains the outline drawing, signal assignment map (see Section 8, “Revision History,”
Table 71 for the 19 x 19 mm, 0.8 mm pitch signal assignments), and MAPBGA ground/power ID by ball
grid location for the 473 19 x 19 mm, 0.8 mm pitch package.
5.2.1 Production Package Outline Drawing–19 x 19 mm 0.8 mm
Figure 87. Production Package: Case 1931—0.8 mm Pitch
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
112 Freescale Semiconductor
Package Information and Pinout
5.2.2 MAPBGA Signal Assignment–19 × 19 mm 0.8 mm
See Table 71 for the 19 ×19 mm, 0.8 mm pitch signal assignments/ball map.
5.2.3 Connection Tables–19 x 19 mm 0.8 mm
Table 67 shows the device connection list for power and ground, alpha-sorted followed by Table 68, which
shows the no-connects. Table 69 shows the device connection list for signals.
5.2.3.1 Ground and Power ID Locations—19 x 19 mm 0.8 mm
Table 67. 19 x 19 BGA Ground/Power ID by Ball Grid Location
GND/PWR ID Ball Location
FGND U16
FUSE_VDD T15
FVCC T16
GND A1, A2, A3, A21, A22, A23, B1, B2, B22, B23, C1, C2, C22, C23, D22, D23, J12, J13, K10, K11, K12, K13, K14,
L10, L11, L12, L13, L14, M9, M10, M11, M12, M13, M14, N10, N11, N12, N13, N14, P10, P11, P12, P13, P14,
R12, Y1, Y23, AA1, AA2, AA22, AA23, AB1, AB2, AB21, AB22, AB23, AC1, AC2, AC21, AC22, AC23
IOQVDD T8
MGND U14
MVCC U15
NVCC1 G15, G16, H16, J17
NVCC2 N16, P16, R15, R16, T14
NVCC3 K7, K8, L7, L8
NVCC4 H14, J15, K15
NVCC5 G9, G10, H8, H9
NVCC6 G11, G12, G13, H12
NVCC7 H15, J16, K16, L16, M16
NVCC8 H10, H11, J11
NVCC9 G14
NVCC10 P8, R7, R8, R9, T9
NVCC21 T11, T12, T13, U11
NVCC22 T10, U7, U8, U9, U10, V6, V7, V8, V9, V10
QVCC H13, J14, L15, M15, N9, N15, P9, P15, R10, R11, R13, R14
QVCC1 J8, J9, J10, K9
QVCC4 L9, M7, M8, N8
SGND U13
SVCC U12
UVCC P18
UGND P17
Package Information and Pinout
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 113
5.2.3.2 BGA Signal ID by Ball Grid Location—19 x 19 0.8 mm
Table 68. 19 x 19 BGA No Connects1
1These contacts are not used and must be floated by the user.
Signal Ball Location
NC N7
NC P7
NC U21
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location
Signal ID Ball Location Signal ID Ball Location
A0 Y6 CKIL E21
A1 AC5 CLKO C20
A10 V15 CLKSS H17
A11 AB3 COMPARE A20
A12 AA3 CONTRAST N21
A13 Y3 CS0 U17
A14 Y15 CS1 Y22
A15 Y14 CS2 Y18
A16 V14 CS3 Y19
A17 Y13 CS4 Y20
A18 V13 CS5 AA21
A19 Y12 CSI_D10 K21
A2 AB5 CSI_D11 K22
A20 V12 CSI_D12 K23
A21 Y11 CSI_D13 L20
A22 V11 CSI_D14 L18
A23 Y10 CSI_D15 L21
A24 Y9 CSI_D4 J20
A25 Y8 CSI_D5 J21
A3 AA5 CSI_D6 L17
A4 Y5 CSI_D7 J22
A5 AC4 CSI_D8 J23
A6 AB4 CSI_D9 K20
A7 AA4 CSI_HSYNC H22
A8 Y4 CSI_MCLK H20
A9 AC3 CSI_PIXCLK H23
ATA_CS0 E1 CSI_VSYNC H21
ATA_CS1 G4 CSPI1_MISO N2
ATA_DIOR E3 CSPI1_MOSI N1
ATA_DIOW H6 CSPI1_SCLK M4
ATA_DMACK E2 CSPI1_SPI_RDY M1
ATA _ R E S E T F3 CSPI1_SS0 M2
BATT_LINE F6 CSPI1_SS1 N6
BCLK W20 CSPI1_SS2 M3
BOOT_MODE0 F17 CSPI2_MISO B4
BOOT_MODE1 C21 CSPI2_MOSI D5
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
114 Freescale Semiconductor
Package Information and Pinout
BOOT_MODE2 D20 CSPI2_SCLK B5
BOOT_MODE3 F18 CSPI2_SPI_RDY D6
BOOT_MODE4 E20 CSPI2_SS0 C5
CAPTURE D18 CSPI2_SS1 A4
CAS AA20 CSPI2_SS2 F7
CE_CONTROL D12 CSPI3_MISO D2
CKIH F23 CSPI3_MOSI E4
CSPI3_SCLK H7 GPIO1_3 G20
CSPI3_SPI_RDY F4 GPIO1_4 D21
CTS1 A9 GPIO1_5 (PWR RDY) D19
CTS2 C12 GPIO1_6 G18
D0 U6 GPIO3_0 G23
D1 W4 GPIO3_1 K17
D10 V1 HSYNC L23
D11 U4 I2C_CLK J18
D12 U3 I2C_DAT K18
D13 R6 IOIS16 J7
D14 U2 KEY_COL0 A15
D15 U1 KEY_COL1 B15
D2 W3 KEY_COL2 D14
D3 V4 KEY_COL3 C15
D3_CLS P20 KEY_COL4 F13
D3_REV P21 KEY_COL5 A16
D3_SPL N17 KEY_COL6 B16
D4 T7 KEY_COL7 A17
D5 W2 KEY_ROW0 A13
D6 V3 KEY_ROW1 B13
D7 W1 KEY_ROW2 C13
D8 T6 KEY_ROW3 A14
D9 V2 KEY_ROW4 F12
DCD_DCE1 C10 KEY_ROW5 D13
DCD_DTE1 D11 KEY_ROW6 B14
DE D16 KEY_ROW7 C14
DQM0 AB19 L2PG See VPG1
DQM1 Y16 LBA V17
DQM2 AA18 LCS0 M22
DQM3 AB18 LCS1 N23
DRDY0 M17 LD0 R23
DSR_DCE1 B10 LD1 R22
DSR_DTE1 A11 LD10 U22
DTR_DCE1 F10 LD11 R18
DTR_DCE2 C11 LD12 U20
DTR_DTE1 A10 LD13 V23
DVFS0 E22 LD14 V22
DVFS1 E23 LD15 V21
EB0 W22 LD16 V20
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location (continued)
Signal ID Ball Location Signal ID Ball Location
Package Information and Pinout
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 115
EB1 W21 LD17 W23
ECB Y21 LD2 R21
FPSHIFT M23 LD3 R20
GPIO1_0 C19 LD4 T23
GPIO1_1 G17 LD5 T22
GPIO1_2 B20 LD6 T21
LD7 T20 SCK6 R2
LD8 R17 SCLK0 B19
LD9 U23 SD_D_CLK M21
M_GRANT U18 SD_D_I M20
M_REQUEST T17 SD_D_IO M18
MA10 Y2 SD0 AC18
MCUPG See VPG0 SD1 AA17
NFALE T2 SD1_CLK K2
NFCE R4 SD1_CMD K3
NFCLE T1 SD1_DATA0 K4
NFRB R3 SD1_DATA1 J1
NFRE T4 SD1_DATA2 J2
NFWE T3 SD1_DATA3 L6
NFWP P6 SD10 AB14
OE T18 SD11 AC14
PAR_RS P22 SD12 AA13
PC_BVD1 G2 SD13 AB13
PC_BVD2 H4 SD14 AC13
PC_CD1 J3 SD15 AA12
PC_CD2 H1 SD16 AC12
PC_POE J6 SD17 AA11
PC_PWRON K6 SD18 AB11
PC_READY H2 SD19 AC11
PC_RST F1 SD2 AB17
PC_RW G3 SD20 AA10
PC_VS1 H3 SD21 AB10
PC_VS2 G1 SD22 AC10
PC_WAIT J4 SD23 AC9
POR F21 SD24 AA9
POWER_FAIL F20 SD25 AC8
PWMO F2 SD26 AB8
RAS AA19 SD27 AC7
READ N18 SD28 AA8
RESET_IN F22 SD29 AB7
RI_DCE1 D10 SD3 AC17
RI_DTE1 B11 SD30 AA7
RTCK D15 SD31 AC6
RTS1 B9 SD4 AA16
RTS2 B12 SD5 AC16
RW V18 SD6 AA15
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location (continued)
Signal ID Ball Location Signal ID Ball Location
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
116 Freescale Semiconductor
Package Information and Pinout
RXD1 C9 SD7 AB15
RXD2 A12 SD8 AC15
SCK3 P1 SD9 AA14
SCK4 G6 SDBA0 AA6
SCK5 D4 SDBA1 Y7
SDCKE0 Y17 TRSTB F15
SDCKE1 V16 TXD1 D9
SDCLK AC20 TXD2 F11
SDCLK AC19 USB_BYP C8
SDQS0 AB16 USB_OC B8
SDQS1 AB12 USB_PWR A8
SDQS2 AB9 USBH2_CLK L1
SDQS3 AB6 USBH2_DATA0 M6
SDWE AB20 USBH2_DATA1 K1
SER_RS P23 USBH2_DIR L2
SFS3 P2 USBH2_NXT L4
SFS4 D3 USBH2_STP L3
SFS5 G7 USBOTG_CLK D8
SFS6 P4 USBOTG_DATA0 G8
SIMPD0 B18 USBOTG_DATA1 C7
SJC_MOD C17 USBOTG_DATA2 A6
SRST0 C18 USBOTG_DATA3 F8
SRX0 A19 USBOTG_DATA4 D7
SRXD3 N3 USBOTG_DATA5 B6
SRXD4 C3 USBOTG_DATA6 A5
SRXD5 C4 USBOTG_DATA7 C6
SRXD6 R1 USBOTG_DIR A7
STX0 F16 USBOTG_NXT B7
STXD3 N4 USBOTG_STP F9
STXD4 B3 VPG0 G21
STXD5 D1 VPG1 G22
STXD6 P3 VSTBY H18
SVEN0 D17 VSYNC0 L22
TCK F14 VSYNC3 N20
TDI A18 WATCHDOG_RST B21
TDO B17 WRITE N22
TMS C16
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location (continued)
Signal ID Ball Location Signal ID Ball Location
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 117
Package Information and Pinout
5.3 Ball Maps
Table 70. Ball Map—14 x 14 0.5 mm Pitch
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
A GND GND SFS5 CSPI2
_MISO
CSPI2_
SS2
USBOT
G_DAT
A7
USBOT
G_DAT
A3
USBOT
G_NXT
USB_
BYP
RXD1 DSR_D
CE1
DSR_D
TE1
RXD2 CE_CO
NTROL
KEY_R
OW3
KEY_R
OW7
KEY_C
OL3
KEY_C
OL7
TDO SJC_M
OD
SVEN0 CAPTU
RE
GPIO1_
6
WATCH
DOG_R
ST
GND GND A
B GND GND STXD4 SRXD
5
CSPI2_
SS0
CSPI2_
SPI_R
DY
USBOT
G_DAT
A5
USBOT
G_DAT
A1
USBOT
G_DIR
USB_P
WR
CTS1 DCD_D
CE1
DCD_D
TE1
RTS2 KEY_R
OW1
KEY_R
OW5
KEY_C
OL1
KEY_C
OL5
TCK TRSTB SRX0 SCLK0 GPIO1_
1
GPIO1_
5
GND GND B
C GND GND SRXD4 SCK4 STXD5 CSPI2_
SS1
CSPI2_
SCLK
USBOT
G_DAT
A4
USBOT
G_STP
USB_O
C
DTR_D
CE1
DTR_D
TE1
TXD2 KEY_R
OW2
KEY_C
OL0
KEY_C
OL4
RTCK DE SRST0 GPIO1
_2
BOOT_
MODE1
BOOT_
MODE3
CLKO GND GND GND C
D GND CSPI3_
MOSI
SCK5 BOOT_
MODE2
GND BOOT_
MODE4
D
E CSPI3_
SCLK
ATA _ D I
OR
CSPI2_
MOSI
NVCC5 GND GND DVFS0 POWER
_FAIL
E
FATA_D
MACK
ATA _ C
S1
SFS4 NVCC5 BATT_L
INE
USBOT
G_DAT
A6
USBOT
G_DAT
A0
TXD1 RI_DC
E1
DTR_D
CE2
KEY_R
OW0
KEY_R
OW6
KEY_C
OL6
TDI STX0 GPIO1
_0
GPIO1
_4
BOOT_
MODE
0
GND CKIH GPIO1_
3
VSTBY F
GPWMO
PC_RW CSPI3_
MISO
CSPI3_
SPI_R
DY
NVCC5 USBOT
G_DAT
A2
USBOT
G_CLK
RTS1 RI_DT
E1
CTS2 KEY_R
OW4
KEY_C
OL2
TMS SIMPD
0
COMP
ARE
NVCC1 NVCC1 DVFS1 VPG0 CLKSS G
HPC_RS
T
PC_BV
D1
ATA _ R
ESET
ATA _ D I
OW
CKIL POR I2C_DA
T
GPIO3_
1
H
JPC_VS
1
PC_RE
ADY
IOIS16 ATA _ C
S0
PC_PO
E
QVCC1 QVCC1 NVCC8 NVCC8 QVCC NVCC6 NVCC6 NVCC9 VPG1 RESET_
IN
I2C_CL
K
CSI_VS
YNC
CSI_PIX
CLK
J
KPC_CD
2
SD1_D
ATA3
PC_PW
RON
PC_BV
D2
PC_VS
2
QVCC1 NVCC6 NVCC1 CSI_H
SYNC
GPIO3_
0
CSI_MC
LK
CSI_D5 CSI_D7 K
LSD1_D
ATA1
SD1_C
MD
SD1_D
ATA 2
PC_WA
IT
PC_CD
1
NVCC3 QVCC1 GND QVCC QVCC QVCC QVCC NVCC4 NVCC4 CSI_D8 CSI_D4 CSI_D6 CSI_D9 CSI_D1
1
L
M USBH2
_DATA0
USBH2
_STP
USBH2
_DATA1
SD1_D
ATA 0
SD1_C
LK
NVCC3 GND GND GND GND GND GND QVCC CSI_D1
4
CSI_D1
2
CSI_D1
0
CSI_D1
3
CSI_D1
5
M
N USBH2
_CLK
CSPI1_
SCLK
CSPI1_
SPI_RD
Y
USBH2
_NXT
USBH2
_DIR
QVCC4 NVCC3 GND GND GND GND GND NVCC7 SD_D_I FPSHIF
T
VSYNC
0
HSYNC DRDY0 N
P CSPI1_
SS1
CSPI1_
MOSI
CSPI1_
SS0
CSPI1_
SS2
CSPI1_
MISO
NVCC1
0
NVCC1
0
GND GND GND GND GND NVCC7 READ LCS1 SD_D_
CLK
SD_D_I
O
LCS0 P
R STXD3 SCK3 SRXD3 SFS3 SRXD6 QVCC4 NVCC1
0
GND GND GND GND GND NVCC7 D3_CL
S
PAR_RS CONTR
AST
WRITE VSYNC
3
R
T STXD6 SCK6 SFS6 NFCE NFWE QVCC4 NVCC1
0
GND GND SGND MGND UGND NVCC7 LD4 LD2 LD0 SER_R
S
D3_REV T
U NFRB NFWP NFCLE D15 D11 QVCC4 QVCC TTM_P
AD
LD8 LD6 D3_SPL LD1 U
V NFALE NFRE D13 D9 D5 QVCC QVCC QVCC QVCC SVCC MVCC UVCC GND LD17 LD13 LD10 LD3 LD5 V
W D14 D12 D7 D3 NVCC2
2
EB0 LD15 LD7 LD9 W
Y D10 D8 D1 IOQVD
D
NVCC2
2
NVCC2
2
NVCC2
2
NVCC2
2
NVCC2
2
NVCC2
2
NVCC2
2
NVCC2
1
NVCC2
1
NVCC2
1
NVCC2 NVCC2 NVCC2 NVCC2 M_GRA
NT
EB1 LD11 LD12 Y
AA D6 D4 A4 NVCC2
2
SD31 SD28 SD27 SD23 SD21 SD18 SD16 SD13 SD9 SD7 SD5 SD3 SD2 DQM2 SDCLK FVCC LD14 LD16 AA
AB D2 D0 A6 A2 RW FGND OE BCLK AB
AC MA10 GND A11 FUSE_V
DD
M_REQ
UEST
GND AC
AD GND GND A12 A13 A8 A0 SDBA0 SDQS3 SD29 SD25 SDQS2 SD17 SD15 SD12 SD8 SDQS0 SD4 SD0 DQM1 CAS SDCKE
0
CS3 ECB GND GND GND AD
AE GND GND A7 A3 SDBA1 SD30 SD26 SD24 SD22 SD20 SD19 SDQS1 SD14 SD11 SD10 SD6 SD1 DQM3 DQM0 SDCLK CS2 LBA CS0 GND GND GND AE
AF GND GND A9 A5 A1 A25 A24 A23 A22 A21 A20 A19 A18 A17 A16 A15 A14 A10 RAS SDWE SDCKE
1
CS5 CS1 CS4 GND GND AF
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
118 Freescale Semiconductor
Package Information and Pinout
Table 71. Ball Map—19 x 19 0.8 mm Pitch
1234 5 6 7 891011121314151617 181920212223
AGND GND GND CSPI2_
SS1 USBOTG_
DATA6 USBOTG
_DATA2 USBOTG
_DIR USB_
PWR CTS1 DTR_
DTE1 DSR_
DTE1 RXD2 KEY_
ROW0 KEY_
ROW3 KEY_
COL0 KEY_
COL5 KEY_
COL7 TDI SRX0 COMPARE GND GND GND A
BGND GND STXD4 CSPI2_
MISO CSPI2_
SCLK USBOTG_
DATA5 USBOTG_
NXT USB_
OC RTS1 DSR_
DCE1 RI_
DTE1 RTS2 KEY_
ROW1 KEY_
ROW6 KEY_
COL1 KEY_
COL6 TDO SIMPD0 SCLK0 GPIO1_2 WATCH
DOG_RST GND GND B
CGND GND SRXD4 SRXD5 CSPI2_
SS0 USBOTG_
DATA7 USBOTG_
DATA1 USB_
BYP RXD1 DCD_
DCE1 DTR_
DCE2 CTS2 KEY_
ROW2 KEY_
ROW7 KEY_
COL3 TMS SJC_
MOD SRST0 GPIO1
_0 CLKO BOOT_
MODE1 GND GND C
DSTXD5 CSPI3_
MISO SFS4 SCK5 CSPI2_
MOSI CSPI2_SPI
_RDY USBOTG_
DATA4 USBOTG_
CLK TXD1 RI_
DCE1 DCD_
DTE1 CE_
CONTROL KEY_
ROW5 KEY_
COL2 RTCK DE SVEN0 CAPTURE GPIO1
_5 BOOT_
MODE2 GPIO1_4 GND GND D
EATA_
CS0 ATA_
DMACK ATA_
DIOR CSPI3_
MOSI BOOT_
MODE4 CKIL DVFS0 DVFS1 E
FPC_
RST PWMO ATA_
RESET CSPI3_
SPI_RDY BATT_
LINE CSPI2_
SS2 USBOTG_
DATA3 USBOT
G_STP DTR_
DCE1 TXD2 KEY_
ROW4 KEY_
COL4 TCK TRSTB STX0 BOOT_
MODE0 BOOT_
MODE3 POWER_
FAIL POR RESET_
IN CKIH F
GPC_VS2 PC_
BVD1 PC_
RW ATA_
CS1 SCK4 SFS5 USBOTG_
DATA0 NVCC5 NVCC5 NVCC6 NVCC6 NVCC6 NVCC9 NVCC1 NVCC1 GPIO1_1 GPIO1_6 GPIO1_3 VPG0 VPG1 GPIO3_0 G
HPC_CD2 PC_
READY PC_
VS1 PC_
BVD2 ATA_
DIOW CSPI3_
SCLK NVCC5 NVCC5 NVCC8 NVCC8 NVCC6 QVCC NVCC4 NVCC7 NVCC1 CLKSS VSTBY CSI_
MCLK CSI_
VSYNC CSI_HSY
NC CSI_PIX
CLK H
JSD1_
DATA1 SD1_
DATA2 PC_
CD1 PC_
WAIT PC_POE IOIS16 QVCC1 QVCC1 QVCC1 NVCC8 GND GND QVCC NVCC4 NVCC7 NVCC1 I2C_
CLK CSI_D4 CSI_D5 CSI_D7 CSI_D8 J
KUSBH2_
DATA1 SD1_
CLK SD1_
CMD SD1_
DATA0 PC_
PWRON NVCC3 NVCC3 QVCC1 GND GND GND GND GND NVCC4 NVCC7 GPIO3_1 I2C_
DAT CSI_D9 CSI_
D10 CSI_
D11 CSI_
D12 K
LUSBH2_
CLK USBH2_
DIR USBH2_
STP USBH2_
NXT SD1_
DATA3 NVCC3 NVCC3 QVCC4 GND GND GND GND GND QVCC NVCC7 CSI_D6 CSI_
D14 CSI_D13 CSI_D15 VSYNC0 HSYNC L
MCSPI1_S
PI_RDY CSPI1_
SS0 CSPI1_
SS2 CSPI1_
SCLK USBH2_
DATA0 QVCC4 QVCC4 GND GND GND GND GND GND QVCC NVCC7 DRDY0 SD_D_
IO SD_D_I SD_D_
CLK LCS0 FPSHIFT M
NCSPI1_
MOSI CSPI1_
MISO SRXD3 STXD3 CSPI1_
SS1 NC1
1These contacts are not used and must be floated by the user.
QVCC4 QVCC GND GND GND GND GND QVCC NVCC2 D3_
SPL READ VSYNC3 CONTRAST WRITE LCS1 N
PSCK3 SFS3 STXD6 SFS6 NFWP NC1NVCC10 QVCC GND GND GND GND GND QVCC NVCC2 UGND UVCC D3_CLS D3_
REV PAR_
RS SER_
RS P
RSRXD6 SCK6 NFRB NFCE D13 NVCC10 NVCC10 NVCC1
0QVCC QVCC GND QVCC QVCC NVCC2 NVCC2 LD8 LD11 LD3 LD2 LD1 LD0 R
TNFCLE NFALE NFWE NFRE D8 D4 IOQVDD NVCC1
0NVCC22 NVCC21 NVCC21 NVCC21 NVCC2 FUSE_
VDD FVCC M_
REQUEST OE LD7 LD6 LD5 LD4 T
UD15 D14 D12 D11 D0 NVCC22 NVCC22 NVCC2
2NVCC22 NVCC21 SVCC SGND MGND MVCC FGND CS0 M_
GRANT LD12 NC LD10 LD9 U
VD10 D9 D6 D3 NVCC22 NVCC22 NVCC22 NVCC2
2NVCC22 A22 A20 A18 A16 A10 SDCKE1 LBA RW LD16 LD15 LD14 LD13 V
WD7 D5 D2 D1 BCLK EB1 EB0 LD17 W
YGND MA10 A13 A8 A4 A0 SDBA1 A25 A24 A23 A21 A19 A17 A15 A14 DQM1 SDCKE0 CS2 CS3 CS4 ECB CS1 GND Y
AA GND GND A12 A7 A3 SDBA0 SD30 SD28 SD24 SD20 SD17 SD15 SD12 SD9 SD6 SD4 SD1 DQM2 RAS CAS CS5 GND GND AA
AB GND GND A11 A6 A2 SDQS3 SD29 SD26 SDQS2 SD21 SD18 SDQS1 SD13 SD10 SD7 SDQS0 SD2 DQM3 DQM0 SDWE GND GND GND AB
AC GND GND A9 A5 A1 SD31 SD27 SD25 SD23 SD22 SD19 SD16 SD14 SD11 SD8 SD5 SD3 SD0 SDCLK SDCLK GND GND GND AC
1234 5 6 7 891011121314151617 181920212223
Product Differences
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 119
6 Product Differences
The locations that provide the differences between silicon Revision 2.0, 1.2, and previous versions are
given in Table 72. The differences between the MCIMX31/MCIMX31L and the
MCIMX31C/MCIMX31LC are outlined in Table 73.
Table 72. Silicon Differentiation by Location within the Data Sheet
Item Location Silicon 1.2 and Previous Silicon 2.0
Ordering Information Section 1.2, “Ordering Information Table 1 Table 1
Feature Differences Table 1.2.1, "Feature Differences
Between Mask Sets," on page 3
N/A Table 1.2.1
Operating Ranges Table 4.1, "Chip-Level Conditions,"
on page 10
Table 8, "Operating Ranges," on
page 13
Ta bl e 8, and Table 9, "Specific
Operating Ranges for Silicon
Revision 2.0," on page 14
Power-up
Sequences
Section 4.2.1, “Powering Up Figure 2, "Power-Up Sequence
for Silicon Revisions 1.2 and
Previous," on page 20
Figure 3, "Option 1 Power-Up
Sequence (Silicon Revision
2.0)," on page 21
Power-down
Sequences
Section 4.2.2, “Powering Down ——
Table 73. Product Differentiation
Item Location MCIMX31/MCIMX31L MCIMX31C/MCIMX31LC
Device ordering
information
Table 1, "Ordering Information," on
page 3
See Ta bl e 1 .See Ta bl e 1.
Thermal simulation
values
Table 6, "Thermal Resistance
Data—14 ×14 mm Package," on
page 11 and Table 7, "Thermal
Resistance Data—19 ×19 mm
Package," on page 11
See Ta bl e 6 and Ta b l e 7 .See Ta bl e 7.
Core overdrive
operating voltages
Table 8, "Operating Ranges," on
page 13
Capability to operate in overdrive
voltages.
Not capable of overdrive
operating voltages.
Fuse_VDD Table 8, "Operating Ranges," on
page 13 and Table 9, "Specific
Operating Ranges for Silicon
Revision 2.0," on page 14
Fusebox read Supply Voltage
1.65 min, 1.95 max.
In read mode, FUSE_VDD
should be floated.
Ambient operating
temperature range
Table 13, "Current Consumption for
–40×C to 85×C, for Silicon Revision
2.0," on page 17, and Table 14,
"Current Consumption for 0×C to
70×C, for Silicon Revision 2.0," on
page 18
0°C min, 70°C max
–40°C min, 85°C max
–40°C min, 85°C max
Current consumption
values
Table 13, "Current Consumption for
–40×C to 85×C, for Silicon Revision
2.0," on page 17
Typical value changes for State
Retention, Doze, and Wait. See
Tabl e.
Typical value changes for State
Retention, Doze, and Wait. See
Ta bl e .
DPLL maximum
output freq range
Table 31, "DPLL Specifications," on
page 37
MPLL and SPLL = 532 MHz MPLL and SPLL = 400 MHz
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
120 Freescale Semiconductor
Product Documentation
7 Product Documentation
This Data Sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com.
MCIMX31 Product Brief (order number MCIMX31PB)
MCIMX31 Reference Manual (order number MCIMX31RM)
MCIMX31 Chip Errata (order number MCIMX31CE)
The Freescale manuals are available on the Freescale Semiconductors Web site at
http://www.freescale.com/imx. These documents may be downloaded directly from the Freescale Web
site, or printed versions may be ordered. ARM Ltd. documentation is available from http://www.arm.com.
8 Revision History
Table 74 summarizes revisions to this document since the release of Rev. 3.4.
GPIO maximum
input current (100 kΩ
PU)
Table 15, "GPIO DC Electrical
Parameters," on page 22
VI = 0, IIN = 25 μA
VI = NVCC, IIN = 0.1 μA
N/A
N/A
Core operating
speed
Table 8, "Operating Ranges," on
page 13
532 MHz 400 MHz
Package Table 70, "Ball Map—14 x 14 0.5
mm Pitch," on page 117 and
Table 71, "Ball Map—19 x 19 0.8
mm Pitch," on page 118
MAPBGA Packages
457 14 x 14 mm, 0.5 mm Pitch
473 19 x 19 mm, 0.8 mm Pitch
MAPBGA Package
47319x19mm, 0.8mm Pitch
Pin Assignment Table 66, "14 x 14 BGA Signal ID by
Ball Grid Location," on page 107 and
Table 69, "19 x 19 BGA Signal ID by
Ball Grid Location," on page 113
MAPBGA Packages
457 14 x 14 mm, 0.5 mm Pitch
473 19 x 19 mm, 0.8 mm Pitch
MAPBGA Package
47319x19mm, 0.8mm Pitch
Table 74. Revision History
Rev. Location Revision
4Figure 87, Ta b l e 7 3 Updated.
4.1 Table 1, "Ordering Information," on page 3 Added note about JTAG compliance.
4.1 Section 1.2.1/3 Updated with new operating frequencies
4.1 Table 8, "Operating Ranges," on page 13 Added new operating frequencies
Table 73. Product Differentiation (continued)
Item Location MCIMX31/MCIMX31L MCIMX31C/MCIMX31LC
Revision History
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor 121
This page left intentionally blank
Document Number: MCIMX31
Rev. 4.1
11/2008
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