BSC014N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• Excellent gate charge x R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
V
GS
=10 V, T
C
=25 °C 100 A
V
GS
=10 V, T
C
=100 °C 100
V
GS
=4.5 V, T
C
=25 °C 100
V
GS
=4.5 V,
T
C
=100 °C 100
V
GS
=4.5 V, T
A
=25 °C,
R
thJA
=50 K/W
2)
30
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C 400
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C 50
Avalanche energy, single pulse E
AS
I
D
=50 A, R
GS
=25 Ω340 mJ
Gate source voltage V
GS
±20 V
Value
1)
J-STD20 and JESD22
PG-TDSON-8
Type Package Marking
BSC014N03MS G PG-TDSON-8 014N03MS
V
DS
30 V
R
DS(on),max
V
GS
=10 V 1.4 mΩ
V
GS
=4.5 V 1.75
I
D
100 A
Product Summary
Rev. 1.5 page 1 2009-10-22
BSC014N03MS G
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation P
tot
T
C
=25 °C 139 W
T
A
=25 °C,
R
thJA
=50 K/W
2)
2.5
Operating and storage temperature T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R
thJC
bottom - - 0.9 K/W
top - - 20
Device on PCB R
thJA
6 cm
2
cooling area
2)
- - 50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0 V, I
D
=1 mA 30 - - V
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=250 µA 1 - 2
Zero gate voltage drain current I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C - 0.1 1 µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C - 10 100
Gate-source leakage current I
GSS
V
GS
=16 V, V
DS
=0 V - 10 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=4.5 V, I
D
=30 A - 1.4 1.75 mΩ
V
GS
=10 V, I
D
=30 A - 1.2 1.4
Gate resistance R
G
0.7 1.5 2.6 Ω
Transconductance g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A 70 140 - S
3)
See figure 3 for more detailed information
Value
Values
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.5 page 2 2009-10-22
BSC014N03MS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance C
iss
- 10000 13000 pF
Output capacitance C
oss
- 2600 3500
Reverse transfer capacitance C
rss
- 210 -
Turn-on delay time t
d(on)
- 32 - ns
Rise time t
r
- 16 -
Turn-off delay time t
d(off)
- 43 -
Fall time t
f
- 16 -
Gate Charge Characteristics
5)
Gate to source charge Q
gs
- 26 34 nC
Gate charge at threshold Q
g(th)
- 16 21
Gate to drain charge Q
gd
- 13 22
Switching charge Q
sw
- 23 35
Gate charge total Q
g
- 63 84
Gate plateau voltage V
plateau
- 2.6 - V
Gate charge total Q
g
V
DD
=15 V, I
D
=30 A,
V
GS
=0 to 10 V - 130 173
Gate charge total, sync. FET Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 4.5 V - 55 73 nC
Output charge Q
oss
V
DD
=15 V, V
GS
=0 V - 70 93
Reverse Diode
Diode continuous forward current I
S
- - 100 A
Diode pulse current I
S,pulse
- - 400
Diode forward voltage V
SD
V
GS
=0 V, I
F
=30 A,
T
j
=25 °C - 0.79 1.1 V
Reverse recovery charge Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt=400 A/µs - - 30 nC
5)
See figure 16 for gate charge parameter definition
4)
See figure 13 for more detailed information
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=15 V,
f=1 MHz
V
DD
=15 V, V
GS
=4.5 V,
I
D
=30 A, R
G
=1.6 Ω
V
DD
=15 V, I
D
=30 A,
V
GS
=0 to 4.5 V
Rev. 1.5 page 3 2009-10-22
BSC014N03MS G
1 Power dissipation 2 Drain current
P
tot
=f(T
C
)I
D
=f(T
C
)
parameter: V
GS
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D=0 Z
thJC
=f(t
p
)
parameter: t
p
parameter: D=t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0.01
0.1
1
10
0000001
t
p
[s]
Z
thJC
[K/W]
0
30
60
90
120
150
0 40 80 120 160
T
C
[°C]
P
tot
[W]
10 V
4.5 V
0
20
40
60
80
100
120
0 40 80 120 160
T
C
[°C]
I
D
[A]
Rev. 1.5 page 4 2009-10-22
BSC014N03MS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
3 V
3.2 V
3.5 V
4 V
4.5 V 5 V
6 V
10 V
0
1
2
3
0 10 20 30 40 50
I
D
[A]
R
DS(on)
[mΩ
Ω
Ω
Ω]
25 °C
150 °C
0
40
80
120
160
200
240
280
012345
V
GS
[V]
I
D
[A]
2.8 V
3 V
3.2 V
3.5 V
4 V
5 V
10 V
0
50
100
150
200
250
300
0 1 2 3
V
DS
[V]
I
D
[A]
0
40
80
120
160
200
240
280
320
0 40 80 120 160
I
D
[A]
g
fs
[S]
Rev. 1.5 page 5 2009-10-22
BSC014N03MS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=30 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
1
2
3
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[mΩ
Ω
Ω
Ω]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
0 10 20 30
V
DS
[V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
V
SD
[V]
I
F
[A]
Rev. 1.5 page 6 2009-10-22
BSC014N03MS G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 ΩV
GS
=f(Q
gate
); I
D
=30 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
t
AV
[µs]
I
AV
[A]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 20 40 60 80 100 120 140
Q
gate
[nC]
V
GS
[V]
Rev. 1.5 page 7 2009-10-22
BSC014N03MS G
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Rev. 1.5 page 8 2009-10-22
BSC014N03MS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 1.5 page 9 2009-10-22
BSC014N03MS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.5 page 10 2009-10-22