D TO-247 G S POWER MOS IV (R) APT8075BN 800V 13.0A 0.75 APT8090BN 800V 12.0A 0.90 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT 8075BN APT 8090BN UNIT 800 800 Volts 13 12 56 48 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 310 Watts Linear Derating Factor 2.48 W/C PD TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.]) MIN APT8075BN 800 APT8090BN 800 APT8075BN 13 APT8090BN 12 TYP MAX UNIT Volts Amps APT8075BN 0.75 APT8090BN 0.90 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 THERMAL CHARACTERISTICS Characteristic RJC Junction to Case RJA Junction to Ambient MIN TYP 0.40 40 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE 050-8007 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT8075/8090BN Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 2410 2950 Coss Output Capacitance VDS = 25V 370 520 Reverse Transfer Capacitance f = 1 MHz 120 180 Crss Qg Total Gate Charge Qgs VGS = 10V 88 130 VDD = 0.5 VDSS 8.9 13 ID = ID [Cont.] @ 25C 44 67 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 13 27 VDD = 0.5 VDSS 18 36 ID = ID [Cont.] @ 25C 62 94 24 48 TYP MAX Rise Time td(off) Turn-off Delay Time tf RG = 1.8 Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions / Part Number Symbol Continuous Source Current (Body Diode) IS MIN APT8075BN 13 APT8090BN 12 APT8075BN 56 APT8090BN 48 Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) ISM (VGS = 0V, IS = -ID [Cont.]) UNIT Amps 1.3 Volts 656 1200 ns 6.2 12 C TYP MAX UNIT SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic Test Conditions / Part Number MIN SOA1 Safe Operating Area VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. 310 SOA2 Safe Operating Area IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. 310 ILM Inductive Current Clamped APT8075BN 56 APT8090BN 48 Watts Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-8007 Rev C 1.0 0.01 0.005 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT8075/8090BN V =6V &10V GS 16 5.5V ID, DRAIN CURRENT (AMPERES) 12 5V 8 4.5V 4 4V > I (ON) x R (ON)MAX. DS D DS 230 SEC. PULSE TEST T = +25C J T = +125C J 12 8 4 T = +125C J T = +25C J T = -55C J 0 0 4 2 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 16 12 APT8075BN 8 APT8090BN 4 0 4.5V 4 4V 2.5 1.2 T = 25C J 2 SEC. PULSE TEST NORMALIZED TO 2.0 V GS V =10V GS = 10V @ 0.5 I [Cont.] D V 1.5 =20V GS 1.0 0.5 0.0 0 10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 25 8 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE V 5.5V 5V BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 6V 12 0 2 12 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS T = -55C J =10V GS 0 0 20 V 1.2 1.0 0.8 0.6 0.4 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE Page 146 050-8007 Rev C ID, DRAIN CURRENT (AMPERES) 16 APT8075/8090BN APT8075BN APT8090BN ID, DRAIN CURRENT (AMPERES) 10,000 10S OPERATION HERE LIMITED BY R (ON) C iss 100S DS APT8075BN C, CAPACITANCE (pF) 60 APT8090BN 10 1mS 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE DC IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = I [Cont.] V =80V DS 16 V DS 12 =160V V DS =400V 8 4 0 C rss 100 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 D C oss 10 1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 1,000 100 50 20 T = +150C J 10 T = +25C J 5 2 1 0 0.5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE TO-247AD Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 050-8007 Rev C 5.38 (.212) 6.20 (.244) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source