Symbol
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current 2
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance 2
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX
0.40
40
UNIT
°C/W
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
MIN TYP MAX
APT8075BN 800
APT8090BN 800
APT8075BN 13
APT8090BN 12
APT8075BN 0.75
APT8090BN 0.90
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
APT APT
8075BN 8090BN
800 800
13 12
56 48
±30
310
2.48
-55 to 150
300
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT8075BN 800V 13.0A 0.75ΩΩ
ΩΩ
Ω
APT8090BN 800V 12.0A 0.90ΩΩ
ΩΩ
Ω
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV®
050-8007 Rev C
TO-247
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
G
D
S
MIN TYP MAX
310
310
APT8075BN 56
APT8090BN 48
MIN TYP MAX
APT8075BN 13
APT8090BN 12
APT8075BN 56
APT8090BN 48
1.3
656 1200
6.2 12
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
MIN TYP MAX
2410 2950
370 520
120 180
88 130
8.9 13
44 67
13 27
18 36
62 94
24 48
UNIT
pF
nC
ns
APT8075/8090BN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions / Part Number
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
UNIT
Amps
Volts
ns
µC
Test Conditions / Part Number
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Symbol
SOA1
SOA2
ILM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
UNIT
Watts
Amps
SAFE OPERATING AREA CHARACTERISTICS
1Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-8007 Rev C
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
050-8007 Rev C
DS D DS
V > I (ON) x R (ON)MAX.
230µ SEC. PULSE TEST
2.5
20
002468
8
16
12
0.7
0.9
0.8
1.0
1.1
1.2
0
25 50 75 100 125 150
0.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0.0
4
8
16
12
4
0.6
0.4
1.4
0.8
1.0
1.2
0
TJ = -55°C TJ = +25°C
TJ = +125°C
TJ = +125°C
TJ = +25°C TJ = -55°C
246810
12
4.5V
4V
5V
5.5V
6V
16
8
0
0
4
12
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
VGS=10V
VGS=20V
0 10 20 30 40
4
8
12
16
APT8090BN
APT8075BN
0 50 100 150 200 250
VGS=6V &10V
4V
4.5V
5V
5.5V VGS=10V
APT8075/8090BN
ID = 0.5 ID [Cont.]
VGS = 10V
TJ = 25°C
2µ SEC. PULSE TEST
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
Page 146
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
TO-247AD Package Outline
050-8007 Rev C
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
T =+25°C
T =+150°C
SINGLE PULSE
C
J
0
8
4
12
16
20
20
2
1
5
10
10
100
1,000
10,000
100
50
10 30 5004020
1
10
60
TJ = +25°C
0 0.5 1.0 1.5 2.0
DC
100mS
10mS
1mS
100µS
10µS
1 5 10 50 100 800
0 40 80 120 160 200
VDS=400V
VDS=160V
APT8090BN
APT8075BN
APT8090BN
OPERATION HERE
LIMITED BY RDS (ON)
APT8075BN
Crss
Coss
Ciss
VDS=80V
TJ = +150°C
APT8075/8090BN
ID = ID [Cont.]
