BCW29,215 - NEXPERIA - Product.Live

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DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 13 2004 Jan 13

DISCRETE SEMICONDUCTORS

BCW29; BCW30

PNP general purpose transistors

2004 Jan 13 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BCW29; BCW30

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 32 V).

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complements: BCW31 and BCW32.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BCW29 C1*

BCW30 C2*

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outlin e SOT23 and symbol.

handbook, halfpage

MAM256

Top view

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCW29 −plastic surface mounted pa ck age; 3 leads SOT23

BCW30

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −32 V

VCEO collector-emitter voltage open base; IC = −2 mA − −32 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C−250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2004 Jan 13 3

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BCW29; BCW30

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −32 V −−−100 nA

IE = 0; VCB = −32 V; Tj = 100 °C−−−10 μA

IEBO emitter cut-off current IC = 0; VEB = −5 V −−−100 nA

hFE DC current gain IC = −10 μA; VCE = −5 V

BCW29 −90 −

BCW30 −150 −

DC current gain IC = −2 mA; VCE = −5 V

BCW29 120 −260

BCW30 215 −500

VCEsat collector-emitter saturation

voltage IC = −10 mA; IB = −0.5 mA − −80 −300 mV

IC = −50 mA; IB = −2.5 mA − −150 −mV

VBEsat base-emitt er saturation voltage IC = −10 mA; IB = −0.5 mA − −720 −mV

IC = −50 mA; IB = −2.5 mA − −810 −mV

VBE base-emitter vo ltage IC = −2 mA; VCE = −5 V −600 − −750 mV

Cccollector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz −4.5 −pF

fTtransition freque ncy IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz

Fnoise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz −−10 dB

2004 Jan 13 4

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BCW29; BCW30

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 13 5

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BCW29; BCW30

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/05/pp6 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12403