TZQ5221B...TZQ5267B
Vishay Semiconductors
Rev . A4, 12-Mar-01 1 (6)
www.vishay.com
Document Number 85612
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Available with tighter tolerances
D
Very high stability
D
Low noise
Applications
Voltage stabilization
96 12009
Order Instruction
Type Ordering Code Remarks
TZQ5221B
TZQ5221B–GS08 Tape and Reel (2.500 pcs)
TZQ5221B
TZQ5221B–GS18 Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Power dissipation RthJA
x
300K/W PV500 mW
Z–current IZPV/VZmA
Junction temperature Tj175
°
C
Storage temperature range Tstg –65...+175
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50 mmx50 mmx1.6 mm RthJA 500 K/W
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF1.5 V
TZQ5221B...TZQ5267B
Vishay Semiconductors
Rev . A4, 12-Mar-012 (6)
www.vishay.com Document Number 85612
Type VZnom 1) IZT for rzjT rzjk at IZK IR at VRTKVZ
V mA
W W
mA
m
A V %/K
TZQ5221B 2.4 20 < 30 < 1200 0.25 < 100 1.0 < –0.085
TZQ5222B 2.5 20 < 30 < 1250 0.25 < 100 1.0 < –0.085
TZQ5223B 2.7 20 < 30 < 1300 0.25 < 75 1.0 < –0.080
TZQ5224B 2.8 20 < 30 < 1400 0.25 < 75 1.0 < –0.080
TZQ5225B 3.0 20 < 29 < 1600 0.25 < 50 1.0 < –0.075
TZQ5226B 3.3 20 < 28 < 1600 0.25 < 25 1.0 < –0.070
TZQ5227B 3.6 20 < 24 < 1700 0.25 < 15 1.0 < –0.065
TZQ5228B 3.9 20 < 23 < 1900 0.25 < 10 1.0 < –0.060
TZQ5229B 4.3 20 < 22 < 2000 0.25 < 5 1.0 < ±0.055
TZQ5230B 4.7 20 < 19 < 1900 0.25 < 5 2.0 < ±0.030
TZQ5231B 5.1 20 < 17 < 1600 0.25 < 5 2.0 < ±0.030
TZQ5232B 5.6 20 < 11 < 1600 0.25 < 5 3.0 < +0.038
TZQ5233B 6.0 20 < 7 < 1600 0.25 < 5 3.5 < +0.038
TZQ5234B 6.2 20 < 7 < 1000 0.25 < 5 4.0 < +0.045
TZQ5235B 6.8 20 < 5 < 750 0.25 < 3 5.0 < +0.050
TZQ5236B 7.5 20 < 6 < 500 0.25 < 3 6.0 < +0.058
TZQ5237B 8.2 20 < 8 < 500 0.25 < 3 6.5 < +0.062
TZQ5238B 8.7 20 < 8 < 600 0.25 < 3 6.5 < +0.065
TZQ5239B 9.1 20 < 10 < 600 0.25 < 3 7.0 < +0.068
TZQ5240B 10 20 < 17 < 600 0.25 < 3 8.0 < +0.075
TZQ5241B 11 20 < 22 < 600 0.25 < 2 8.4 < +0.076
TZQ5242B 12 20 < 30 < 600 0.25 < 1 9.1 < +0.077
TZQ5243B 13 9.5 < 13 < 600 0.25 < 0.5 9.9 < +0.079
TZQ5244B 14 9.0 < 15 < 600 0.25 < 0.1 10 < +0.082
TZQ5245B 15 8.5 < 16 < 600 0.25 < 0.1 11 < +0.082
TZQ5246B 16 7.8 < 17 < 600 0.25 < 0.1 12 < +0.083
TZQ5247B 17 7.4 < 19 < 600 0.25 < 0.1 13 < +0.084
TZQ5248B 18 7.0 < 21 < 600 0.25 < 0.1 14 < +0.085
TZQ5249B 19 6.6 < 23 < 600 0.25 < 0.1 14 < +0.086
TZQ5250B 20 6.2 < 25 < 600 0.25 < 0.1 15 < +0.086
TZQ5251B 22 5.6 < 29 < 600 0.25 < 0.1 17 < +0.087
TZQ5252B 24 5.2 < 33 < 600 0.25 < 0.1 18 < +0.088
TZQ5253B 25 5.0 < 35 < 600 0.25 < 0.1 19 < +0.089
TZQ5254B 27 4.6 < 41 < 600 0.25 < 0.1 21 < +0.090
TZQ5255B 28 4.5 < 44 < 600 0.25 < 0.1 21 < +0.091
TZQ5256B 30 4.2 < 49 < 600 0.25 < 0.1 23 < +0.091
TZQ5257B 33 3.8 < 58 < 700 0.25 < 0.1 25 < +0.092
TZQ5258B 36 3.4 < 70 < 700 0.25 < 0.1 27 < +0.093
TZQ5259B 39 3.2 < 80 < 800 0.25 < 0.1 30 < +0.094
TZQ5260B 43 3.0 < 93 < 900 0.25 < 0.1 33 < +0.095
TZQ5261B 47 2.7 < 105 < 1000 0.25 < 0.1 36 < +0.095
TZQ5262B 51 2.5 < 125 < 1100 0.25 < 0.1 39 < +0.096
TZQ5263B 56 2.2 < 150 < 1300 0.25 < 0.1 43 < +0.096
TZQ5264B 60 2.1 < 170 < 1400 0.25 < 0.1 46 < +0.097
TZQ5265B 62 2.0 < 185 < 1400 0.25 < 0.1 47 < +0.097
TZQ5266B 68 1.8 < 230 < 1600 0.25 < 0.1 52 < +0.097
TZQ5267B 75 1.7 < 270 < 1700 0.25 < 0.1 56 < +0.098
1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30
°
C ± 2
°
C.
TZQ5221B...TZQ5267B
Vishay Semiconductors
Rev . A4, 12-Mar-01 3 (6)
www.vishay.com
Document Number 85612
Characteristics (Tj = 25
_
C unless otherwise specified)
0 40 80 120 160
0
100
300
400
500
600
P – Total Power Dissipation ( mW )
tot
Tamb – Ambient Temperature ( °C )
200
95 9602
200
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0 5 10 15 20
1
10
100
1000
V – Voltage Change ( mV )
Z
VZ – Z-Voltage ( V )
25
95 9598
D
IZ=5mA
Tj=25°C
Figure 2. Typical Change of Working Voltage under
Operating Conditions at Tamb=25
°
C
–60 0 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V – Relative Voltage Change
Ztn
Tj – Junction Temperature ( °C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10
10–4/K 8
10–4/K
–4
10–4/K
6
10–4/K
4
10–4/K
2
10–4/K
–2
10–4/K
0
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
0102030
–5
0
5
10
15
TK – Temperature Coefficient of V ( 10 /K
)
VZ
VZ – Z-Voltage ( V )
50
95 9600
40
Z–4
IZ=5mA
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
0 5 10 15
0
50
100
150
200
C – Diode Capacitance ( pF )
D
VZ – Z-Voltage ( V )
25
95 9601
20
Tj=25°C
VR=2V
Figure 5. Diode Capacitance vs. Z–Voltage
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I – Forward Current ( mA )
F
VF – Forward Voltage ( V )
Tj=25°C
Figure 6. Forward Current vs. Forward Voltage
TZQ5221B...TZQ5267B
Vishay Semiconductors
Rev . A4, 12-Mar-014 (6)
www.vishay.com Document Number 85612
04 81216
20
95 9604
0
20
40
60
80
100
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
Ptot=500mW
Tamb=25°C
Figure 7. Z–Current vs. Z–Voltage
15 20 25 30
0
10
20
30
40
50
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
35
95 9607
Ptot=500mW
Tamb=25°C
Figure 8. Z–Current vs. Z–Voltage
0 5 10 15 20
1
10
100
1000
r – Differential Z-Resistance ( )
Z
VZ – Z-Voltage ( V )
25
95 9606
W
Tj=25°C
IZ=1mA
5mA
10mA
Figure 9. Differential Z–Resistance vs. Z–Voltage
1
10
100
1000
Z – Thermal Resistance for Pulse Cond. (K/W)
thp
tp – Pulse Length ( ms )95 9603
10–1 100101102
tp/T=0.5
tp/T=0.2
tp/T=0.1
tp/T=0.05
tp/T=0.02 tp/T=0.01
Single Pulse RthJA=300K/W
D
T=Tjmax–Tamb
iZM=(–VZ+(VZ2+4rzj
D
T/Zthp)1/2)/(2rzj)
Figure 10. Thermal Response
TZQ5221B...TZQ5267B
Vishay Semiconductors
Rev . A4, 12-Mar-01 5 (6)
www.vishay.com
Document Number 85612
Dimensions in mm
96 12071
TZQ5221B...TZQ5267B
Vishay Semiconductors
Rev . A4, 12-Mar-016 (6)
www.vishay.com Document Number 85612
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
