2010. 2. 10 1/5
SEMICONDUCTOR
TECHNICAL DATA
KID65783AP/AF
BIPOLAR LINEAR INTEGRATED CIRCUIT
Revision No : 3
8CH HIGH-VOLTAGE SOURCE DRIVER
The KID65783AP/AF is comprised of eight source current transistor
array. This driver is specifically designed for fluorescent display applications.
Applications include relay, hammer and lamp drivers.
FEATURES
·High Output Voltage : VCC=50V(Min.).
·Output Current (Single Output) IOUT : -500mA(Min.).
·Output Clamp Diodes.
·Single Supply Voltage.
·Input Compatible With Various Types of Logic.
·Package Type-AP : DIP-18pin. DIP-18(1)Pin
·Package Type AF : FLP-20pin.
18 10
19
Q
DIP-18
A
B
dP
D
L
W
T
G
DIM MILLIMETERS
A
B
D
T
P
d
G
C
L
3.50 0.2
0 - 15
1.40 0.1
W
25.1MAX
6.40 0.2
0.50 0.1
4.15 0.3
3.30 0.3
2.54
0.25+0.1/-0.05
7.62
Q
C
+
_
+
_
+
_
+
_
+
_
+
_
MAXIMUM RATINGS (Ta=25℃)
FLP-20
DP
G
T
L
B1
A
H
110
20 11
B2
0.27+0.1/-0.05
P
T
1.27
MILLIMETERS
0.4 0.1
0.20+0.1/-0.05
12.83 0.2
B2
G
H
L
D
A
B1
DIM
10.34 0.3
2.51 0.2
0.65 0.2
7.49 0.2
+
_
+
_
+
_
+
_
+
_
+
_
Note) Delated above 25℃in the proportion of 11.7W/℃(AP Type), 7.7W/℃(AF Type).
TYPE DESIGNATION
KID65783AP/AF TTL, 5V CMOS
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC 50 V
Output Current IOUT -500 mA/ch
Input Voltage VIN 15 V
Clamp Diode Reverse Voltage VR50 V
Clamp Diode Forward Current IF500 mA
Power Dissipation AP PD (Note) 1.47 W
AF 0.96
Operating Temperature Topr -40～85 ℃
Storage Temperature Tstg -55～150 ℃
18 10
19
Q
DIP-18(1)
A
B
dP
D
L
W
T
G
DIM MILLIMETERS
A
B
D
T
P
d
G
C
L
3.30 0.2
0 - 10
1.52 0.1
W
6.35 0.2
0.46 0.1
4.05 0.3
3.30 0.3
2.54
0.25+0.1/-0.05
Q
C
+
_
23.0 0.2
+
_
+
_
+
_
+
_
+
_
7.75 0.2
+
_
+
_
2010. 2. 10 2/5
KID65783AP/AF
Revision No : 3
VCC
INPUT 10KΩ
5KΩ
20KΩ
10KΩ
2.6KΩ
OUTPUT
GND
nKID65783 : n=1
(Note) The input and output parasitic diodes
cannot be used as clamp diodes.
20
O1O2O3O4O5O6O7O8
I1I2I3I4I5I6I7I8
GND
VCC N.C
N.C
19 18 17 16 15 14 13 12 11
1234 657 1089
AF-TYPE (FLP-20 package)
O1O2O3O4O5O6O7O8
I1I2I3I4I5I6I7I8
GND
VCC
18 17 16 15 14 13 12 11
1234 657
10
89
AP-TYPE (DIP-18 package)
PIN CONNECION (TOP VIEW)
SCHEMATICS (EACH DRIVER)
2010. 2. 10 3/5
KID65783AP/AF
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST
CIRCUIT TEST CONDITION MIN. TYP. MAX. UNIT
Output Leakage Curret ICEX 1VCC=VCC MAX. VIN=0.4V
Ta=25℃- - 100 μA
Output Saturation Voltage VCE(sat) 2
VIN=VIN(ON), IOUT=-350mA - - 2.0
V
VIN=VIN(ON), IOUT=-225mA - - 1.9
VIN=VIN(ON), IOUT=-100mA - - 1.8
Input Current IIN(ON) 3
VIN=2.4V - 36 52 μA
VIN=3.85V - 180 260
Input Voltage
VIN(ON)
4
VCE=2.0V, IOUT=-350mA - - 2.0
V
VIN(OFF) IOUT=-500μA0.8 - -
Supply Current ICC(ON) 3VIN=VIN(ON), VCC=50V - - 2.5 mA/ch
Clamp Diode Reverse Current IR5VR=50V - - 50 μA
Clamp Diode Forward Voltage VF6IF=350mA - - 2.0 V
Turn-On Delay tON
7VCC=VCC MAX. RL=125Ω
CL=15pF
- 0.15 - μs
Turn-Off Delay tOFF - 1.8 -
RECOMMENDED OPERATING CONDITIONS (Ta=-40～85℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Supply Voltage VCC - - - 50 V
Output Current
AP
IOUT
Ta=85℃
Tj=120℃
Tpw=25mS
Duty=10%
8 Circuits - - -260
mA/ch
Duty=50%
8 Circuits - - -59
Duty=10%
8 Circuits - - -180
AF Duty=50%
8 Circuits - - -38
Input Voltage VIN - - - 12 V
Input Voltage
Output ON VIN (ON) - 2.0 5.0 15
V
Output OFF VIN (OFF) - 0 - 0.8
Clamp Diode
Reverse Voltage
AP
VR-
- - 50
V
AF - - 35
Clamp Diode Forward Current IF- - - 400 mA
Power Dissipation
AP
PD-
- - 0.52
W
AF - - 0.35
2010. 2. 10 4/5
KID65783AP/AF
Revision No : 3
VIN
VIN
VCC
VCC
VCC
VCC
ICEX
VCE(sat)
IOUT
IOUT
IIN(ON)
VIN(ON), VIN(OFF)
VCC VCE
VCE
VCC
VR
R
I
OPEN
IF
VF
VIN CL
INPUT
PULSE
GENERATOR
INPUT
OUTPUT
50µs
50% 50%
VIH
0
tPLH tPHL
OH
V
OL
V
1. ICEX
3. IIN(ON), ICC
2. VCE(sat)
4. VIN(ON), IN(OFF)
5. IR6. VF
7. tON , tOFF
RL
50% 50%
(Note 1) Pulse width 50µS, duty cycle 10%
Output impedance 50Ω , t 5ns, t 10ns
(Note 2) CL includes probe and jig capacitance
<
=<
=
VIN
TEST CIRCUIT
2010. 2. 10 5/5
KID65783AP/AF
Revision No : 3
OUTPUT CURRENT I (A)
0
OUT
0
OUTPUT SATURATION VOLTAGE V
OUT
I - V
INPUT VOLTAGE V (V)
INPUT CURRENT I (mA)
0
0
IN
IN
I - V
IN IN
481216 20
0.4
0.8
1.2
1.6
0.8 1.6 2.4 3.2
0.2
0.4
0.6
AMBIENT TEMPERATURE Ta ( C)
POWER DISSIPATION P (W)
0
0
1.0
0.5
1.5
50
D
100 150
P - Ta
D
1.6
INPUT VOLTAGE V (V)
100
OUTPUT CURRENT I (mA)
0
0
0.4
200
300
OUT
400
500
0.8
IN
1.2
I - V
OUT IN
2.0
Ta=25 C TYP
Ta=25 C TYP.
CE(sat)
CE(sat) (V)
DIDOE FORWARD CURRENT I (A)
DIODE FORWARD VOLTAGE V (V)
0
0
0.2
F
0.4
0.6
0.4
F
0.8 1.2 1.6
I - V
FF
Ta=25 C TYP
1Type-AP Free Air
Type-AF Free Air
2
1
2
Ta=25 C