LM833
LM833 Dual Audio Operational Amplifier
Literature Number: SNOSBD8D
LM833
Dual Audio Operational Amplifier
General Description
The LM833 is a dual general purpose operational amplifier
designed with particular emphasis on performance in audio
systems.
This dual amplifier IC utilizes new circuit and processing
techniques to deliver low noise, high speed and wide band-
width without increasing external components or decreasing
stability. The LM833 is internally compensated for all closed
loop gains and is therefore optimized for all preamp and high
level stages in PCM and HiFi systems.
The LM833 is pin-for-pin compatible with industry standard
dual operational amplifiers.
Features
jWide dynamic range: >140dB
jLow input noise
voltage: 4.5nV/√Hz
jHigh slew rate: 7 V/µs (typ); 5V/µs (min)
jHigh gain bandwidth: 15MHz (typ); 10MHz (min)
jWide power bandwidth: 120KHz
jLow distortion: 0.002%
jLow offset voltage: 0.3mV
jLarge phase margin: 60˚
jAvailable in 8 pin MSOP
package
Schematic Diagram (1/2 LM833)
00521801
January 2003
LM833 Dual Audio Operational Amplifier
© 2004 National Semiconductor Corporation DS005218 www.national.com
Connection Diagram
00521802
Order Number LM833M, LM833MX, LM833N, LM833MM or LM833MMX
See NS Package Number
M08A, N08E or MUA08A
LM833
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage V
CC
–V
EE
36V
Differential Input Voltage (Note 3) V
I
±30V
Input Voltage Range (Note 3) V
IC
±15V
Power Dissipation (Note 4) P
D
500 mW
Operating Temperature Range T
OPR
−40 ∼85˚C
Storage Temperature Range T
STG
−60 ∼150˚C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds) 260˚C
Small Outline Package
(SOIC and MSOP)
Vapor Phase (60 seconds) 215˚C
Infrared (15 seconds) 220˚C
ESD tolerance (Note 5) 1600V
DC Electrical Characteristics (Notes 1, 2)
(T
A
= 25˚C, V
S
=±15V)
Symbol Parameter Conditions Min Typ Max Units
V
OS
Input Offset Voltage R
S
=10Ω0.3 5 mV
I
OS
Input Offset Current 10 200 nA
I
B
Input Bias Current 500 1000 nA
A
V
Voltage Gain R
L
=2kΩ,V
O
=±10V 90 110 dB
V
OM
Output Voltage Swing R
L
=10kΩ±12 ±13.5 V
R
L
=2kΩ±10 ±13.4 V
V
CM
Input Common-Mode Range ±12 ±14.0 V
CMRR Common-Mode Rejection Ratio V
IN
=±12V 80 100 dB
PSRR Power Supply Rejection Ratio V
S
=15∼5V, −15∼−5V 80 100 dB
I
Q
Supply Current V
O
= 0V, Both Amps 5 8 mA
AC Electrical Characteristics
(T
A
= 25˚C, V
S
=±15V, R
L
=2kΩ)
Symbol Parameter Conditions Min Typ Max Units
SR Slew Rate R
L
=2kΩ5 7 V/µs
GBW Gain Bandwidth Product f = 100 kHz 10 15 MHz
Design Electrical Characteristics
(T
A
= 25˚C, V
S
=±15V) The following parameters are not tested or guaranteed.
Symbol Parameter Conditions Typ Units
∆V
OS
/∆T Average Temperature Coefficient 2 µV/˚C
of Input Offset Voltage
THD Distortion R
L
=2kΩ,f=20∼20 kHz 0.002 %
V
OUT
= 3 Vrms, A
V
=1
e
n
Input Referred Noise Voltage R
S
= 100Ω, f = 1 kHz 4.5
i
n
Input Referred Noise Current f = 1 kHz 0.7
PBW Power Bandwidth V
O
=27V
pp
,R
L
=2kΩ, THD ≤1% 120 kHz
f
U
Unity Gain Frequency Open Loop 9 MHz
φ
M
Phase Margin Open Loop 60 deg
Input Referred Cross Talk f = 20∼20 kHz −120 dB
LM833
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Design Electrical Characteristics (Continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 2: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 3: If supply voltage is less than ±15V, it is equal to supply voltage.
Note 4: This is the permissible value at TA≤85˚C.
Note 5: Human body model, 1.5 kΩin series with 100 pF.
Typical Performance Characteristics
Maximum Power
Dissipation
vs Ambient Temperature
Input Bias Current vs
Ambient Temperature
00521804 00521805
Input Bias Current vs
Supply Voltage Supply Current vs
Supply Voltage
00521806 00521807
LM833
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Typical Performance Characteristics (Continued)
DC Voltage Gain
vs Ambient Temperature
DC Voltage Gain
vs Supply Voltage
00521808 00521809
Voltage Gain & Phase
vs Frequency
Gain Bandwidth Product
vs Ambient Temperature
00521810 00521811
Gain Bandwidth
vs Supply Voltage
Slew Rate vs
Ambient Temperature
00521812 00521813
LM833
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Typical Performance Characteristics (Continued)
Slew Rate vs
Supply Voltage
Power Bandwidth
00521814 00521815
CMR vs Frequency Distortion vs Frequency
00521819 00521820
PSRR vs Frequency
Maximum
Output Voltage vs
Supply Voltage
00521818 00521816
LM833
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Typical Performance Characteristics (Continued)
Maximum
Output Voltage vs
Ambient Temperature
Spot Noise Voltage
vs Frequency
00521817 00521821
Spot Noise Current
vs Frequency
Input Referred Noise Voltage
vs Source Resistance
00521822 00521823
Noninverting Amp Noninverting Amp
00521824 00521825
LM833
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Typical Performance Characteristics (Continued)
Inverting Amp
00521826
Application Hints
The LM833 is a high speed op amp with excellent phase
margin and stability. Capacitive loads up to 50 pF will cause
little change in the phase characteristics of the amplifiers
and are therefore allowable.
Capacitive loads greater than 50 pF must be isolated from
the output. The most straightforward way to do this is to put
a resistor in series with the output. This resistor will also
prevent excess power dissipation if the output is accidentally
shorted.
Noise Measurement Circuit
00521827
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise.
Total Gain: 115 dB @f=1kHz
Input Referred Noise Voltage: e
n
= V0/560,000 (V)
LM833
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RIAA Preamp Voltage Gain, RIAA
Deviation vs Frequency
Flat Amp Voltage Gain vs
Frequency
00521828 00521829
Typical Applications
NAB Preamp
NAB Preamp Voltage Gain
vs Frequency
00521830
AV= 34.5
F=1kHz
En= 0.38 µV
A Weighted
00521831
Balanced to Single Ended Converter Adder/Subtracter
00521832
VO=V1–V2
00521833
VO=V1+V2−V3−V4
LM833
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Typical Applications (Continued)
Sine Wave Oscillator
00521834
Second Order High Pass Filter
(Butterworth)
Second Order Low Pass Filter
(Butterworth)
00521835
Illustration is f0= 1 kHz
00521836
Illustration is f0= 1 kHz
LM833
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Typical Applications (Continued)
State Variable Filter
00521837
Illustration is f0= 1 kHz, Q = 10, ABP =1
AC/DC Converter
00521838
2 Channel Panning Circuit (Pan Pot) Line Driver
00521839 00521840
LM833
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Typical Applications (Continued)
Tone Control
00521841
Illustration is:
fL= 32 Hz, fLB = 320 Hz
fH=11 kHz, fHB = 1.1 kHz
00521842
RIAA Preamp
00521803
Av=35dB
En= 0.33 µV
S/N=90dB
f=1kHz
A Weighted
A Weighted, VIN =10mV
@f=1kHz
LM833
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Typical Applications (Continued)
Balanced Input Mic Amp
00521843
Illustration is:
V0 = 101(V2 − V1)
LM833
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Typical Applications (Continued)
10 Band Graphic Equalizer
00521844
fo(Hz) C
1
C
2
R
1
R
2
32 0.12µF 4.7µF 75kΩ500Ω
64 0.056µF 3.3µF 68kΩ510Ω
125 0.033µF 1.5µF 62kΩ510Ω
250 0.015µF 0.82µF 68kΩ470Ω
500 8200pF 0.39µF 62kΩ470Ω
1k 3900pF 0.22µF 68kΩ470Ω
2k 2000pF 0.1µF 68kΩ470Ω
4k 1100pF 0.056µF 62kΩ470Ω
8k 510pF 0.022µF 68kΩ510Ω
16k 330pF 0.012µF 51kΩ510Ω
Note 6: At volume of change = ±12 dB
Q = 1.7
Reference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61
LM833
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Typical Applications (Continued)
LM833 MDC MWC
DUAL AUDIO OPERATIONAL AMPLIFIER
00521854
Die Layout (A - Step)
DIE/WAFER CHARACTERISTICS
Fabrication Attributes General Die Information
Physical Die Identification LM833A Bond Pad Opening Size (min) 110µm x 110µm
Die Step A Bond Pad Metalization ALUMINUM
Physical Attributes Passivation VOM NITRIDE
Wafer Diameter 150mm Back Side Metal BARE BACK
Dise Size (Drawn) 1219µm x 1270µm
48mils x 50mils
Back Side Connection Floating
Thickness 406µm Nominal
Min Pitch 288µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (A - Step)
(Referenced to die center, coordinates in µm) NC = No Connection
SIGNAL NAME PAD# NUMBER X/Y COORDINATES PAD SIZE
XYX Y
OUTPUT A 1 -476 500 110 x 110
INPUT A- 2 -476 -212 110 x 110
INPUT A+ 3 -476 -500 110 x 110
VEE- 4 -0 -500 110 x 110
INPUT B+ 5 476 -500 110 x 110
INPUT B- 6 476 -212 110 x 110
OUTPUT B 7 476 500 110 x 110
VCC+ 8 0 500 110 x 110
LM833
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Typical Applications (Continued)
IN U.S.A
Tel #: 1 877 Dial Die 1 877 342 5343
Fax: 1 207 541 6140
IN EUROPE
Tel: 49 (0) 8141 351492 / 1495
Fax: 49 (0) 8141 351470
IN ASIA PACIFIC
Tel: (852) 27371701
IN JAPAN
Tel: 81 043 299 2308
LM833
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Physical Dimensions inches (millimeters) unless otherwise noted
Molded Small Outline Package (M)
Order Number LM833M or LM833MX
NS Package Number M08A
Molded Dual-In-Line Package (N)
Order Number LM833N
NS Package Number N08E
LM833
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
8-Lead (0.118” Wide) Molded Mini Small Outline Package
Order Number LM833MM or LM833MMX
NS Package Number MUA08A
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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www.national.com
LM833 Dual Audio Operational Amplifier
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