UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R206-026,A
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC817 / BC818
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage
BC807
BC808
VCES
-50
-30
V
V
Collector-Emitter Voltage
BC807
BC808
VCE0
-45
-25
V
V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) Ic -800 mA
Collector Dissipation Pc -310 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BC807
BC808
BVCEO Ic=-10mA, IB=0
-45
-25
V
V
Collector-Emitter Breakdown Voltage
BC807
BC808
BVCES IC=-0.1mA, VBE=0
-50
-30
V
V
Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA, Ic=0 -5 V
Collector Cut-off Current ICES VCE=-25V, VBE=0 -100 nA
Emitter Cut-off Current IEBO VEB=-4V, Ic=0 -100 nA
DC Current Gain hFE1
hFE2
Ic=-100mA, VCE=-1V
Ic=-300mA, VCE=-1V
100
60
630
UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R206-026,A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Saturation Voltage VCE(sat) Ic=-500mA, IB=-50mA -0.7 V
Base-Emitter On Voltage VBE(on) Ic=-300mA, VCE=-1V -1.2 V
Current Gain Bandwidth Product fT VCE=-5V, Ic=-10mA, f=50MHz 100 MHz
Output Capacitance Cob VCB=-10V, f=1MHz 12 pF
Classification of hFE
RANK 16 25 40
hFE1 100-250 160-400 250-630
hFE2 60- 100- 170-
Marking Code
TYPE 807-16 807-25 807-40 808-16 808-25 808-40
MARK 9FA 9FB 9FC 9GA 9GB 9GC
UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R206-026,A
TYPICAL CHARACTERISTICS
UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 4
QW-R206-026,A
