BCW61 Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88171
209-May-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbol Min. TYP. Max. Unit
DC Current Gain
at –VCE = 5 V, –IC = 10 µA BCW61A hFE ––––
at –VCE = 5 V, –IC = 10 µA BCW61B hFE 30 –––
at –VCE = 5 V, –IC = 10 µA BCW61C hFE 40 –––
at –VCE = 5 V, –IC = 10 µA BCW61D hFE 100 –––
at –VCE = 5 V, –IC = 2 mA BCW61A hFE 120 –220 –
at –VCE = 5 V, –IC = 2 mA BCW61B hFE 180 –310 –
at –VCE = 5 V, –IC = 2 mA BCW61C hFE 250 –460 –
at –VCE = 5 V, –IC = 2 mA BCW61D hFE 380 –630 –
at –VCE = 1 V, –IC = 50 mA BCW61A hFE 60 –––
at –VCE = 1 V, –IC = 50 mA BCW61B hFE 80 –––
at –VCE = 1 V, –IC = 50 mA BCW61C hFE 100 –––
at –VCE = 1 V, –IC = 50 mA BCW61D hFE 110 –––
Collector-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA –VCEsat 60 –250 mV
at –IC = 50 mA, –IB = 1.25 mA –VCEsat 120 –550 mV
Base-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA –VBEsat 600 –850 mV
at –IC = 50 mA, –IB = 1.25 mA –VBEsat 680 –1050 mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA –VBE 600 650 750 mV
at –VCE = 5 V, –IC = 10 µA–VBE –550 –mV
at –VCE = 1 V, –IC = 50 mA –VBE –720 –mV
Collector-Emiter Cut-off Current
at –VCE = 32 V, VEB=0 –ICES ––20 nA
at –VCE = 32 V, VEB=0, TA = 150°C––20 µA
Emitter-Base Cut-off Current
at –VEB = 4 V, IC=0 –IEBO ––20 nA
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz fT100 ––MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHZ, IE=0 CCBO –4.5 –pF
Emitter-Base Capacitance
at –VEB = 0.5 V, f = 1 MHZ, IC=0 CEBO –11 –pF
Noise Figure
at –VCE = 5 V, –IC= 200 µA, RS= 2 kΩ, f = 100 kHZ, B = 200Hz
F–26dB
Small Signal Current Gain BCW60A –200
at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZBCW60B –260
BCW60C hfe –330
BCW60D –520
Tur n-on Time at RL= 990Ω(see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA ton –85 150 ns
Tur n-off Time at RL= 990Ω(see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA toff –480 800 ns