MJE200 NPN
MJE210 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE200, MJE210
types are complementary silicon transistors designed
for high gain amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 8.0 V
Continuous Collector Current IC 5.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 1.5 W
Power Dissipation (TC=25°C) PD 15 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 83.4 °C/W
Thermal Resistance ΘJC 8.34 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=40V 100 nA
ICBO V
CB=40V, TJ=125°C 100 μA
IEBO V
EB=8.0V 100 nA
BVCEO I
C=10mA 25 V
VCE(SAT) I
C=500mA, IB=50mA 0.3 V
VCE(SAT) I
C=2.0A, IB=200mA 0.75 V
VCE(SAT) I
C=5.0A, IB=1.0A 1.8 V
VBE(SAT) I
C=5.0A, IB=1.0A 2.5 V
VBE(ON) V
CE=1.0V, IC=2.0A 1.6 V
hFE V
CE=1.0V, IC=500mA 70
hFE V
CE=1.0V, IC=2.0A 45 180
hFE V
CE=2.0V, IC=5.0A 10
fT V
CE=10V, IC=100mA, f=10MHz 65 MHz
Cob V
CB=10V, IE=0, f=100kHz (MJE200) 80 pF
Cob V
CB=10V, IE=0, f=100kHz (MJE210) 120 pF
TO-126 CASE
R1 (2-May 2012)
www.centralsemi.com
MJE200 NPN
MJE210 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
TO-126 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (2-May 2012)
