BC140, 141
NPN Medium Power Transistors
Page 1 31/05/05 V1.0
Features:
•NPN Silicon Power Switching Transistors.
•Medium Power Amplifier and Switching Applications.
Pin Configuration:
1. Emitter
2. Base
3. Collector
Dimension Minimum Maximum
A 8.50 9.39
B 7.74 8.50
C 6.09 6.60
D 0.40 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.70 -
L 42° 48°
TO-39 Metal Can Package
Dimensions : Millimetres
BC140, 141
NPN Medium Power Transistors
Page 2 31/05/05 V1.0
Description Symbol BC140 BC141 Units
Collector Emitter Voltage VCEO 40 60
VCollector Base Voltage VCBO 80 100
Emitter Base Voltage VEBO 7.0
Collector Current - Continuous IC1.0 A
Power Dissipation at Ta = 25ºC
Derate Above 25ºC PD0.8
4.57
W
mW/°C
Power Dissipation at Tc = 25ºC
Derate Above 25ºC PD4.0
22.73
Operating and Storage Junction
Temperature Range TJ, Tstg -65 to +200 °C
Absolute Maximum Ratings
Junction to Ambient in Free Air Rth(j-a) 219
°C/W
Junction to Case Rth(j-c) 44
Thermal Characteristics
BC140, 141
NPN Medium Power Transistors
Page 3 31/05/05 V1.0
Description Symbol Test Condition Minimum Typical Maximum Units
Collector Emitter Voltage VCES
IC= 100µA, VBE = 0
BC140
BC141
80
100
- -
V
Collector Emitter Voltage *VCEO
IC= 30mA, IB= 0
BC140
BC141
40
60
- -
Emitter Base Voltage VEBO IE= 100µA, IC= 0 7 - - V
Collector Cut off Current ICES
VCE = 60V, VBE = 0
VCE = 60V, VBE = 0, Ta= 150ºC - - 100
100
nA
µA
DC Current Gain *hFE
IC= 100mA, VCE = 1V
BC140/BC141
Group-6
Group-10
Group-16
IC= 1A, VCE = 1V
BC140/BC141
Group-6
Group-10
Group-16
40
40
63
100
26
15
20
30
400
100
160
250
-
Collector Emitter Saturation Voltage *VCE(sat) IC= 1A, IB= 0.1A - - 1.0
V
Base Emitter on Voltage *VBE(on) IC= 1A, VCE = 1V - - 2.0
Dynamic Characteristics
Transition Frequency fTIC = 50mA, VCE = 10V, f = 20MHz 50 - - MHz
Output Capacitance Cob VCB = 10V, IE= 0, f = 1MHz - - 25
pF
Input Capacitance Cib VEB = 0.5V, IC= 0, f = 1MHz - - 80
Switching Characteristics
Turn On Time ton IC= 150mA, IB1 = 7.5mA - - 250
ns
Turn Off Time toff IC= 150mA, IB1 = IB2 = 7.5mA - - 850
Electrical Characteristics (Ta= 25ºC unless specified otherwise)
*Pulsed : Pulse Duration ≤300µs, Duty Cycle ≤1%
BC140, 141
NPN Medium Power Transistors
Page 4 31/05/05 V1.0
Package Part Number
TO-39
BC140-6
BC140-10
BC140-16
BC141-6
BC141-10
BC141-16
Specifications
For enquiries from all other markets
BC140, 141
NPN Medium Power Transistors
Page 5 31/05/05 V1.0
Notes:
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