12. MISCELLANEOUS DIODES IN ORDER OF (1} USE and (2) TYPE No. [2] A DESCRIPTION LINE TYPE com DWG._ TECHNICAL DATA No. | No. iS | MAT. No : iE : i | I I Tt ]TCRE286 117Si 'TO18 iN-Chan JFET Curr Limjlpp 300uA 10%.R9.0MN min at 25ViLim Volt 1.0V;Peak Oper Voit 56V 2 iTCR5287 11 Si |1TO18 'N-Chan JFET Curr Lim;Ipp 330uA +10%,R6.6MQ. min at 25V;Lim Volt 1.0V;Peak Oper Voit 50V 3. |TCR5288 411 /Si \TO18 (N-Chan JFET Curr Limitpp 390uA +10%,R4.1MQ min at 25V;Lim Volt 1.05V;Peak Oper Voit 50V 4 )TCR5289 [t1Tsi TTO18 'N-Chan JFET Curr Lim;lpp 430uA +10%,R3.3M min at 25V;Lim Volt 1.05V;Peak Oper Volt 50V 5 TCR5290 11 {Si TOs N-Chan JFET Curr Lim;lpp 470uA +10%,R2.7MQ min at 25V;Lim Volt 1.05V;Peak Oper Volt 50V 6 TCR5291 [11 $i TO18 LN-Chan JFET Curr Limlpp 560uA +10%,R1.9MQ min at 25V;Lim Volt 1.1V;Peak Oper Volt 50V 7 :TCR5292 11 Si TO18 N-Chan JFET Curr Lim;ipp 620uA #10%,R1.55MQ min at 25V;Lim Volt 1.13V;Peak Oper Volt 50V 8 TCRS5293 11/Si iTO18 [N-Ghan JFET Curr Lim;ipp 680uA +10%,R1.35M min at 25V;Lim Volt 1.15V;Peak Oper Volt 50V g _|TCRS294 11 |Si [1018 N-Chan JFET Curr Lim;ipp 750uA +10%,R1.15MQ min at 25V;Lim Volt 1.2V;Peak Oper Volt 50V 10 TCR5295 1 Si :TO18 IN-Chan JFET Curr Lim;ipp 820uA +10%.R1.0MQ min at 25V:Lim Volt 1.25V;Peak Oper Volt 50V 11 TCR5296 11 {Si 'TO18 IN-Chan JFET Curr Lim:Ipp 910uA +10%,R880kQ at 25V;Lim Volt 1.29V;Peak Oper Volt 50V 12 ,YCR5297 1135S TO138 [N-Chan JFET Curr Limjipp 1.0mA+10%,R800k0 at 25V:Lim Volt 1.35V;Peak Oper Volt 50V 13 TCR5298 11)Si TOW 'N-Chan JFETF Curr Lim;Ipp 1. TmAt10%,R700kQ at 25V;Lim Volt 1.4V;Peak Oper Volt 50V 14 TCR5299 11 Si TO18 [Neran JFET Curr Limjipp 1.2mA +10%,R 640k at 25V;Lim Volt 1.45V;Peak Oper Volt 50V 15 | TCR5300 11/$i TO18 N-Chan JFET Curr Lim:ipp 1.3mA+10%,R580k0 at 25V;Lim Volt 1.5V;Peak Oper Volt 50V 16 TCRS5301 11/Si iTO18 N-Chan JFET Curr Lim:lpp 1.4mA10% R540kQ at 25V;Lim Volt 1.55V;Peak Oper Volt 50V 7 TCR5302 11/Si 'TO18 N-Chan JFET Curr Lim:Ipp 1.5mA+10%,R510kN at 25V;Lim Volt 1.6V;Peak Oper Volt 50V 18 TCR5303 11/Si [TQ18 N-Chan JFET Curr Lim:lpp 1.6mAt10%,R475k0 at 25V;Lim Voit 1.65V;Peak Oper Voit 50V 19 TCR5304 117/Si :1018 (N-Chan JFET Curr Lim;Ipp 1.8mA10%,R420k0 at 25V;Lim Volt 1.75V;Peak Oper Volt 50V 20 TCRS5305 11|Si TO18 N-Chan JFET Curr Lim;lpp 2.0mA#10%,R395k at 25V;Lim Volt 1.85V;Peak Oper Volt 50V 21 TCAS306 __j41)S8i TO18 iN-Chan JFET Curr Limjpp 2.2mA+10%,R370kQ at 25V;Lim Volt 1.95V;Peak Oper Volt 50V 2 TCR5307 11/Si ~ ITO N-Chan JFET Curr Lim:ipp 2.4mA210%,R345kQ at 25V;Lim Volt 2.0V;Peak Oper Voit 50V 23 TCR5308 11/Si 'TO18 N-Chan JFET Curr Lim;lpp 2.7mA+10%,R320kQ at 25V;Lim Volt 2.15V;Peak Oper Volt 50V 24 |TCRS309 {11 |Si [19018 N-Chan JFET Curr Lim:Ipp 3.0mAt10%,R300kKN at 25V;Lim Volt 2.25V;Peak Oper Volt 50V 25 = =[TCR5310 t11Si [TO18 N-Chan JFET Curr Limiipp 3.3mA10%,R280k0 at 25V;Lim Volt 2.35V;Peak Oper Volt 50V 26 (TCR5311 11/Si [TO18 (N-Chan JFET Curr Lim;Ipp 3.6mA+10%,R265kQ at 25V;Lim Volt 2.5V;Peak Oper Volt 50V 27, TCR5312 11|$i iTO18 N-Chan JFET Curr Limlpp 3.9mA+10%,R255k0 at 25V:Lim Volt 2.6V;Peak Oper Volt 50V. 28 = 1TCR5313 11/Si 11018 N-Chan JFET Curr Lim;lpp 4.3mA10%,R245k at 25V;Lim Volt 2.75V;Peak Oper Volt 50V 29 |TCR5314 111Si TO18 N-Chan JFET Curr Lim;lpp 4.7mA+10%,R235k0 at 25V;Lim Volt 2.9V;Peak Oper Volt 50V 30 |TCR5315 11$i TO18 N-Chan JFET Curr Lim;lpp 5.2mA+10%,R220k0 at 25V;Lim Volt 3.1V;Peak Oper Volt 50V 31 TAS6X3E 12 M7 1d AC Contact,Coil V 78V max;Coil 1-200mA max. 324% |BAW21 12 1SiA 007 VBR-90V-150V;IF-150mA_ max;IR-.10uA max. at 70V. 33 [S1IVIP 12 |Se Alzg iAC Coil V_26V_max;AC Coil | 200mA max:;DC Coil V_ 22V_max;DC Coil | 250mA_max. 34 Siwip 12 |Se Atzk AC Coil V 26V maxcAC Coil | 1.20mA max;DC Coil V 22V max;DC Coil | 2.00mA max. 35 StX1P 12 |Se Atzj AC Coil V 26V max:AC Coil | 900mA max;DC Coil V 22V max;DC Coil | 1.40A max. 36 $1y1P 12 Se Aizh AC Coil V_26V