TLP290(GB,E) - Toshiba - Product.Live

TLP290

2012-04-26

TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

TLP290

Programmable Controllers

AC/DC-Input Module

Hybrid ICs

TLP290 consist of photo transistor, optically coupled to two gallium arsenide

infrared emitting diode connected inverse parallel, and can operate directly

by AC input current

Since TLP290 are guaranteed wide operating temperature (Ta=-55 to 110 ˚C)

and high isolation voltage (3750Vrms), it’s suitable for high-density surface

mounting applications such as programmable controllers and hybrid ICs.

• Collector-Emitter voltage : 80 V (min)

• Current transfer ratio : 50% (min)

Rank GB : 100% (min)

• Isolation voltage : 3750 Vrms (min)

• Guaranteed performance over -55 to 110 ˚C

• UL recognized : UL1577, File No. E67349

• cUL approved : CSA Component Acceptance Service No.5A,

File No. 67349

• SEMKO approved : EN 60065: 2002, Approved no. 1200315

EN 60950-1: 2001, EN 60335-1: 2002,

Approved no. 1200315

• BSI approved : BS EN 60065: 2002, Approved no. 9036

: BS EN 60950-1: 2006, Approved no. 9037

• Option (V4)

VDE approved: EN 60747-5-5 Certificate, No. 40009347

Maximum operating insulation voltage: 707 Vpk

Highest permissible over-voltage: 6000 Vpk

(Note) When an EN 60747-5-5 approved type is needed,

please designate the “Option(V4)”

Construction Mechanical Rating

Creepage distance: 5.0 mm (min)

Clearance: 5.0 mm (min)

Insultion thickness: 0.4 mm (min)

TOSHIBA 11-3C1

Weight: 0.05 g (typ.)

TLP290

1: Anode

Cathode

2: Cathode

Anode

3: Emitter

4: Collector

Pin Configuration

Unit: mm

TLP290

2012-04-26

Current Transfer Ratio (Unless otherwise specified, Ta = 25°C)

Note1: Specify both the part number and a rank in this format when ordering

(e.g.) rank GB: TLP290(GB,E

Note: For safety standard certification, however, specify the part number alone.

(e.g.) TLP290(GB,E: TLP290

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)

Characteristic Symbol

Note Rating

Unit

R.M.S. forward current IF(RMS) ±50 mA

Input forward current derating (Ta ≥ 90°C) ΔIF /ΔTa -1.5 mA /°C

Input forward current (pulsed) IFP (Note 2) ±1 A

Input power dissipation PD 100 mW

Input power dissipation derating (Ta ≥ 90°C) ΔPD/ΔTa -3.0 mW/°C

LED

Junction temperature Tj 125 °C

Collector-emitter voltage VCEO 80 V

Emitter-collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation PC 150 mW

Collector power dissipation derating (Ta ≥ 25°C) ΔPC /ΔTa -1.5 mW /°C

Detector

Junction temperature Tj 125 °C

Operating temperature range Topr -55 to 110 °C

Storage temperature range Tstg -55 to 125 °C

Lead soldering temperature Tsol 260 (10s) °C

Total package power dissipation PT 200 mW

Total package power dissipation derating (Ta ≥ 25°C) ΔPT /ΔTa -2.0 mW /°C

Isolation voltage BVS (Note3) 3750 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note2: Pulse width ≤ 100μs, frequency 100Hz

Note3: AC, 1min., R.H.≤ 60%, Device considered a two terminal device: LED side pins shorted together and

detector side pins shorted together.

Current Transfer Ration (%)

(IC / IF)

IF = 5 mA, VCE = 5 V, Ta = 25°C

TYPE Classification

(Note1)

Min Max

Marking of Classification

Blank 50 400

Blank, YE, GR, B, GB

Rank Y 50 150 YE

Rank GR 100 300 GR

Rank BLL 200 400 B

TLP290

Rank GB 100 400 GB

TLP290

2012-04-26

Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristic Symbol Test Condition Min Typ Max Unit

Input forward voltage VF I

F = ±10 mA 1.1 1.25 1.4 V

LED

Input capacitance CT V = 0 V, f = 1 MHz - 60 - pF

Collector-emitter breakdown voltage V(BR) CEO I

C = 0.5 mA 80 - - V

Emitter-collector breakdown voltage V(BR) ECO I

E = 0.1 mA 7 - - V

VCE = 48 V, - 0.01 0.08 μA

Dark current ICEO

VCE = 48 V, Ta = 85°C - 2 50 μA

Detector

Collector-emitter capacitance CCE V = 0 V, f = 1 MHz - 10 - pF

Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristic Symbol Test Condition MIn Typ. Max Unit

50 - 400

Current transfer ratio IC / IF IF = ±5 mA, VCE = 5 V

Rank GB 100 - 400

- 60 -

Saturated CTR IC / IF (sat) IF = ±1 mA, VCE = 0.4 V

Rank GB 30 - -

IC = 2.4 mA, IF = ±8 mA - - 0.3

- 0.2 -

Collector-emitter

saturation voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA

Rank GB - - 0.3

Off-state collector current IC(off) V

F = ± 0.7 V, VCE = 48 V - - 10 μA

Collector current ratio IC (ratio) IC (IF = -5 mA) / IC (IF = 5 mA)

(Fig.1)

0.33 - 3 -

Fig.1: Collector current ratio test circuit

5V)

C(ratio)

I==

VCE

IC1

IC2

IF1

IF2

TLP290

2012-04-26

Isolation Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Total capacitance (input to output) CS VS = 0V, f = 1 MHz - 0.8 - pF

Isolation resistance RS VS = 500 V, R.H.≤ 60% 1×1012 1014 - Ω

AC, 1 minute 3750 - -

AC, 1 second, in oil - 10000 -

Vrms

Isolation voltage BVS

DC, 1 minute, in oil - 10000 - Vdc

Switching Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr - 4 -

Fall time tf - 7 -

Turn-on time ton - 7 -

Turn-off time toff

VCC = 10 V, IC = 2 mA

RL = 100 Ω

- 7 -

μs

Turn-on time ton - 2 -

Storage time ts - 30 -

Turn-off time toff

RL = 1.9 kΩ (Fig.2)

VCC = 5 V, IF = ±16 mA

- 60 -

μs

(Fig. 2): Switching time test circuit

VCE

VCC

IF IF

VCE

VCC

0.5V

4.5V

toff

ton

TLP290

2012-04-26

IF-Ta PC-Ta

Input forward current I F (mA)

100

-20 0 20 40 60 80 100 120

Collector power dissipation PC (mW)

100

120

140

160

-20 0 20 40 60 80 100 120

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

IFP-DR IF-VF

Input forward current (pulsed)

FP (mA)

Input forward current IF (mA)

0.1

100

0.6 0.8 1 1.2 1.4 1.6 1.8 2

Duty cycle ratio DR Input forward voltage VF (V)

∆VF/∆Ta-IF IFP - VFP

Input forward current derating

ΔVF /ΔTa (mV/°C)

-3.2

-2.8

-2.4

-2

-1.6

-1.2

-0.8

-0.4

0.1 1 10 100

Input forward current (pulsed) IFP (mA)

100

1000

0.6 1 1.4 1.8 2.2 2.6 3 3.4

Input forward current IF (mA) Input forward voltage (pulsed) VFP (V)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

110˚C

85˚C

50˚C

25˚C

0˚C

-25˚C

-55˚C

Pulse width ≤10μs

Repeative frequency=100Hz

Ta=25 ° C

(Note) This curve shows

the maximum limit to the

input forward current.

(Note) This curve shows the

maximum limit to the collector

power dissipation.

Pules width ≤100μs

Ta=25 ˚C

100

1000

300

500

3000

10-3 10-2 10-1 100

(Note) This curve shows the

maximum limit to the input

forward current (pulsed).

TLP290

2012-04-26

IC-VCE

Collector current IC (mA)

0 0.2 0 .4 0.6 0.8 1

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC-IF ICEO-Ta

Collector current IC (mA)

0.1

100

0.1 1 10 100

Dark current ICEO (μA)

0.0001

0.001

0.01

0.1

0 20 40 60 80 100 120

Input forward voltage IF (mA) Ambient temperature Ta (°C)

IC/IF -IF

Current transfer ratio IC / IF (%)

100

1000

0.1 1 10 100

Input forward current IF (mA)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

0246810

Ta=25 ˚C

VCE=10V

VCE=5V

VCE=0.4V

VCE=10V

VCE=5V

VCE=0.4V

24V

10V

VCE=48V

IF=2mA

IF=5mA

(max)

Ta=25 ˚C

TLP290

2012-04-26

VCE(sat) - Ta IC - Ta

Collector-emitter saturation voltage

VCE(sat) (V)

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

-60 -40 -20 0 20 40 60 80 100 120

Collector current I

C (mA)

0.1

100

-60 -40 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C)

Switching time - RL Switching time - Ta

Switching time (μs)

100

1000

10000

110100

Switching time (μs)

0.1

100

1000

-60 -40 -20 0 20 40 60 80 100 120

Load resistance RL (kΩ) Ambient temperature Ta (°C)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

IF=8mA, IC=2.4mA

IF=1mA, IC=0.2mA

VCE=5V

=0.5m

toff

Ta=25 ˚C

IF=16mA

VCC=5V

IF=16mA

VCC=5V

RL=1.9kΩ

ton

toff

ton

TLP290

2012-04-26

Soldering and Storage

1. Soldering

1.1 Soldering

When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as

much as possible by observing the following conditions.

1) Using solder reflow

·Temperature profile example of lead (Pb) solder

·Temperature profile example of using lead (Pb)-free solder

Reflow soldering must be performed once or twice.

The mounting should be completed with the interval from the first to the last mountings being 2 weeks.

2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)

･Please preheat it at 150°C between 60 and 120 seconds.

･Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.

3) Using a soldering iron

Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may

be heated at most once.

Time (s)

(°C)

240

210

160

60 to 120s less than 30s

Package surface temperature

140

Time (s)

(°C)

260

230

190

60 to 120s

30 to 50s

180

Package surface temperature

This profile is based on the device’s

maximum heat resistance guaranteed

value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste

type used by the customer within the

described profile.

This profile is based on the device’s

maximum heat resistance guaranteed

value.

Set the preheat temperature/heating

temperature to the optimum temperature

corresponding to the solder paste

type used by the customer within the

described profile.

TLP290

2012-04-26

2. Storage

1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.

2) Follow the precautions printed on the packing label of the device for transportation and storage.

3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,

respectively.

4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

6) When restoring devices after removal from their packing, use anti-static containers.

7) Do not allow loads to be applied directly to devices while they are in storage.

8) If devices have been stored for more than two years under normal storage conditions, it is

recommendedthat you check the leads for ease of soldering prior to use.

TLP290

2012-04-26

EN 60747-5-5 Option: (V4)

Types : TLP290

Type designations for “option: (V4)”, which are tested under EN 60747 requirements.

Ex.: TLP290 (V4GB-TP,E V4 : EN 60747 option

GB : CTR rank type

TP : Standard tape & reel type

E : [[G]]/RoHS COMPATIBLE (Note 4 )

Note: Use TOSHIBA standard type number for safety standard application.

e.g.: TLP290(V4GB-TP,E Æ TLP290

Note4: Please contact your Toshiba sales representative for details on environmental information such

as the product’s RoHS compatibility.

RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and

electronics equipment.

EN 60747 Isolation Characteristics

Description Symbol Rating Unit

Application classification

for rated mains voltage ≤ 150Vrms

for rated mains voltage ≤ 300Vrms

I-IV

I-III

―

Climatic classification 55 / 110 / 21 ―

Pollution degree 2 ―

Maximum operating insulation voltage VIORM 707 Vpk

Input to output test voltage, Method A

Vpr=1.5 × VIORM, type and sample test

tp=10s, partial discharge<5pC

Vpr 1060 Vpk

Input to output test voltage, Method B

Vpr=1.875 × VIORM, 100% production test

tp=1s, partial discharge<5pC

Vpr 1325 Vpk

Highest permissible overvoltage

(transient overvoltage, tpr=60s) VTR 6000 Vpk

Safety limiting values (max. permissible ratings in case of fault,

also refer to thermal derating curve)

current (input current: IF, Psi=0mW)

power (output or total power dissipation)

temperature

Isi

Psi

Tsi

250

400

150

°C

Insulation resistance

VIO=500V, Ta=Tsi

Rsi

109 Ω

TLP290

2012-04-26

Insulation Related Specifications

Minimum creepage distance Cr 5.0mm

Minimum clearance Cl 5.0mm

Minimum insulation thickness ti 0.4mm

Comparative tracking index CTl 175

1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.

(e.g. at a standard distance between soldering eye centers of 3.5mm).

If this is not permissible, the user shall take suitable measures.

2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.

Maintenance of the safety data shall be ensured by means of protective circuit.

VDE test sign: Marking on product

for EN 60747

: Marking on packing

for EN 60747

Marking Example: TLP290

1pin mark

CTR rank mark

Lot No.

Type

Country of origin

e.g.) J; Japan

Option(V4) mark

Process lot No.

P290

TLP290

2012-04-26

Figure

1 Partial discharge measurement procedure according to EN 60747

Destructive test for qualification and sampling tests.

Method A

(for type and sampling tests,

destructive tests)

t1, t2

t3, t4

tp(Measuring time for

partial discharge)

tini

VVINITIAL(6kV)

Vpr(1060V)

VIORM(707V)

t1tini

= 1 to 10 s

= 1 s

= 10 s

= 12 s

= 60 s

Vpr(1325V )

VIORM(707V )

t3t4

Figure 2 Partial discharge measurement procedure according to EN 60747

Non-destructive test for100% inspection.

Method B

(for sample test, non-

destructive test)

t3, t4

tp(Measuring time for

partial discharge)

= 0.1 s

= 1 s

= 1.2 s

Figure

3 Dependency of maximum safety ratings on ambient temperature

500

400

300

200

100

0 25 50 75 100 125 150 175

500

400

300

200

100

Ta (°C)

Æ Psi

Isi Å

Isi

(mA)

Psi

(

)

TLP290

2012-04-26

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