Absolute Maximum Ratings Values Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Units RGE = 20 k Tcase = 25/75 C Tcase = 25/75 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 100 / 75 200 / 150 20 450 -40 ... + 150 (125) 2 500 7) Class F 40/125/56 V V A A V W C V 75 / 50 200 / 150 550 1500 A A A A2s SEMITRANS(R) M Low Loss IGBT Modules SKM 75 GB 124 D Inverse Diode IF = -IC IFM = -ICM IFSM I 2t Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C SEMITRANS 2 Characteristics Symbol Conditions 1) V(BR)CES VGE = 0, IC = 4 mA VGE(th) VGE = VCE, IC = 2 mA ICES Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C IGES VGE = 20 V, VCE = 0 VCEsat VGE = 15 V; IC = 50 A IC = 75 A VCEsat Tj = 25 (125) C gfs VCE = 20 V, IC = 50 A CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon 5) Eoff 5) per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V3) IC = 50 A, ind. load RGon = RGoff = 22 Tj = 125 C min. typ. max. Units 4,5 - - - - - 23 - 5,5 0,8 3,5 - 2,1(2,4) 2,5(3,0) 40 - 6,5 1 - 200 2,45(2,85) - - V V mA mA nA V V S - - - - - - 3,3 500 220 - 350 4,3 600 300 30 pF nF pF pF nH - - - - - - 60 55 420 50 8 6 100 100 500 100 - - ns ns ns ns mWs mWs - - - - - - 2,0(1,8) 2,25 (2,1) 1,1 - 39 7 2,5 - 1,2 22 - - V V V m A C - - - - - - 0,27 0,60 0,05 C/W C/W C/W VCES Inverse Diode 8) VF = VEC VF = VEC VTO rt IRRM Qrr IF = 50 A VGE = 0 V; IF = 75 A Tj = 25 (125) C Tj = 125 C Tj = 125 C IF = 50 A; Tj = 125 C2) IF = 50 A; Tj = 125 C2) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode per module GB Features * MOS input (voltage controlled) * N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) * Low loss high density chips * Low tail current * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: B 6 - 97 * Switching (not for linear use) 1) 2) 3) 5) 7) 8) Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 800 A/s, VGE = 0 V Use VGEoff = -5... -15 V See fig. 2 + 3; RGoff = 22 Visol = 4000 Vrms on request CAL = Controlled Axial Lifetime Technology Cases and mech. data B 6 - 98 (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 93 SKM 75 GB 124 D M 075GD12.XLS-1 500 M 075GD12.XLS-2 25 Tj = 125 C VCE = 600 V VGE = + 15 V RG = 22 mWs W 400 20 300 15 200 10 100 5 E on Eoff E Ptot 0 0 0 20 40 60 80 100 120 140 160 C TC 0 20 40 60 80 100 IC Fig. 1 Rated power dissipation Ptot = f (TC) 120 A Fig. 2 Turn-on /-off energy = f (IC) M 075GD12.XLS-4 M 075GD12.XLS-3 25 Tj = 125 C VCE = 600 V VGE = + 15 V IC =50 A mWs 20 1000 A tp=12s 1 pulse TC = 25 C Tj 150 C 100 E on 15 100s 10 1ms 10 E off 10ms 1 5 Not for linear use IC E 0 0,1 0 RG 20 40 60 80 100 120 1 Fig. 3 Turn-on /-off energy = f (RG) 100 1000 10000 V Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) M 075GD12.XLS-5 2,5 10 V CE 2 M 075GD12.XLS-6 Tj 150 C 12 VGE = 15 V RGoff = 22 IC = 50 A 10 di/dt=300 A/s 900 A/s 1500 A/s 8 1,5 Tj 150 C VGE = 15 V tsc 10 s L < 25 nH ICN = 50 A 6 4 allowed numbers of short circuits: <1000 2 time between short circuits: >1s 1 0,5 ICpuls/IC ICSC/IC 0 0 0 200 V CE 400 600 800 1000 1200 1400 V Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 94 0 200 V CE 400 600 800 1000 1200 1400 V Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 http://store.iiic.cc/ (c) by SEMIKRON M 075GD12.X LS-8 120 Tj = 150 C VGE 15V A 100 80 60 40 20 IC 0 0 20 40 60 80 100 120 140 TC 160 C Fig. 8 Rated current vs. temperature IC = f (TC) M 075GD12.XLS-9 M 075GD12.XLS-10 100 100 A A 17V 15V 13V 11V 9V 7V 80 60 17V 15V 13V 11V 9V 7V 80 60 40 40 20 20 IC IC 0 0 0 1 2 3 V CE 4 V 5 0 1 2 3 4 V CE Fig. 9 Typ. output characteristic, tp = 80 s; 25 C 5 V Fig. 10 Typ. output characteristic, tp = 80 s; 125 C M 075GD12.XLS-12 Pcond(t) = VCEsat(t) * IC(t) 100 A VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) 80 VCE(TO)(Tj) 1,3 + 0,0005 (Tj -25) [V] 60 typ.: rCE(Tj) = 0,016 + 0,00005 (Tj -25) [] 40 max.: rCE(Tj) =0,023 + 0,00007 (Tj -25) [] 20 valid for VGE = + 15 +2 -1 IC [V]; IC > 0,3 ICnom 0 0 2 V GE Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON 4 6 8 10 V 12 Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 0898 http://store.iiic.cc/ B 6 - 95 SKM 75 GB 124 D M 0 75GD12 .X LS-13 20 M 0 75GD12 .X LS-14 100 I Cpuls = 50 A V 18 VGE = 0 V f = 1 MHz nF 600V 16 800V 14 10 12 Cies 10 8 1 6 Coes 4 C VGE 2 Cres 0 0,1 0 QGate 100 200 300 400 nC 0 Fig. 13 Typ. gate charge characteristic VCE 10 20 30 V Fig. 14 Typ. capacitances vs.VCE M 0 75GD12 .X LS-15 1000 ns t doff 100 M 0 75GD12 .X LS-16 10000 Tj = 125 C VCE = 600 V VGE = 15 V RGon = 22 RGoff = 22 induct. load Tj = 125 C VCE = 600 V VGE = 15 V IC = 50 A induct. load ns tdof f 1000 tr t don t don tr 100 tf tf t t 10 10 0 20 40 60 80 100 IC 120 0 A Fig. 15 Typ. switching times vs. IC 40 60 80 100 120 Fig. 16 Typ. switching times vs. gate resistor R G M 0 75GD12 .X LS-17 100 20 RG M 0 75GD12 .X LS-18 3,5 Tj=125C, typ. 10 RG= mJ A 3 15 80 Tj=25C, typ. 2,5 25 Tj=125C, max. 60 VCC = 600 V Tj = 125 C VGE = 15 V 2 Tj=25C, max. 43 1,5 40 1 100 20 0,5 Eof fD 0 IF 0 0 1 VF 2 V Fig. 17 Typ. CAL diode forward characteristic B 6 - 96 0 IF 3 20 40 60 A 80 Fig. 18 Diode turn-off energy dissipation per pulse 0898 http://store.iiic.cc/ (c) by SEMIKRON M075GD12.XLS-19 1 M 075GD12.XLS-20 1 K/W K/W 0,1 0,1 0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 0,001 single pulse D=0,5 0,2 0,1 0,05 0,02 0,01 0,01 0,001 ZthJC single pulse ZthJC 0,0001 0,00001 0,0001 tp 0,001 0,01 0,1 s 0,0001 0,00001 1 Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f RG= 10 A 100 80 0,001 0,01 0,1 1 s Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f M 075GD12.XLS-22 120 0,0001 tp M 075GD12.XLS-23 120 VCC = 600 V Tj = 125 C VGE = 15 V A VCC = 600 V Tj = 125 C VGE = 15 V IF = 50 A RG= 10 100 80 15 15 60 60 25 25 43 40 40 43 100 20 IRR 20 100 IRR 0 0 0 IF 20 40 60 A 80 Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) 0 1000 2000 3000 diF/dt Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt) M 075GD12.XLS-24 I:\MARKETIN\FRAMEDAT\datbl\B06-igbt\75gb124d.fm 12 Typical Applications 4000 A/s C RG= 10 10 include 25 15 IF= 75 A VCC = 600 V Tj = 125 C VGE = 15 V 43 Switched mode power supplies 8 Inverters 50 A 100 DC servo and robot drives 35 A 6 DC choppers 25 A AC motor speed control 4 15 A UPS Uninterruptable power supplies 2 General power switching applications Qrr 0 0 1000 diF/dt 2000 3000 4000 A/s Fig. 24 Typ. CAL diode recovered charge (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 97 SKM 75 GB 124 D SEMITRANS 2 Case D 61 UL Recognized File no. E 63 532 SKM 75 GB 124 D Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions M1 M2 a w B 6 - 98 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units Values (M6) (M5) Units min. typ. max. 3 27 2,5 22 - - - - - - - - 5 44 5 44 5x9,81 160 0898 http://store.iiic.cc/ Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Eight devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 2) Larger packing units of 20 or 42 pieces are used if suitable Accessories B 6 - 4 SEMIBOX C - 1. (c) by SEMIKRON