PNP EPITAXIAL
BC556/557/558/559/560 SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
HIGH VOLTAGE: BC556, VCEO= -65V
LOW NOISE: BC559, BC560
Complement to BC546 ... BC 550
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
ELECTRICAL CHARACTERISTICS (TA=25°°C)
hFE CLASSIFICATION
Characteristic Symbol Rating Unit
Collector-Base Capacitance
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
V
V
V
V
V
V
V
mA
mW
°C
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
ICBO
hFE
VCE (sat)
VBE (on)
VBE (on)
fT
CCBO
NF
NF
VCB= -30V, IE=0
VCE= -5V, IC=2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA
VCB= -10V, f=1MHz
VCE= -5V, IC= -200µA
f=1KHz, RG=2K
VCE= -5V, IC= -200µA
RG=2K
f=30~15000MHz
110
-600
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
-15
800
-300
-650
-750
-800
6
10
4
4
2
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
Classification ABC
hFE 110-220 200-450 420-800
TO-92
1. Collector 2. Base 3. Emitter
1999 Fairchild Semiconductor Corporation
Rev. B
PNP EPITAXIAL
BC556/557/558/559/560 SILICON TRANSISTOR
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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As used herein:
ISOPLANAR™
MICROWIRE™
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PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
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support device or system, or to affect its safety or
effectiveness.
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