PHP30NQ15T
N-channel TrenchMOS standard level FET
Rev. 03 — 3 March 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasti c
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industria l applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applicat ion s du e to fast swit ch ing
characteristics
1.3 Applications
DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 150 V
IDdrain current Tmb =25°C; V
GS =10V;
see Figure 1 and 2--29A
Ptot total power
dissipation Tmb = 25 °C; see Figure 3 - - 150 W
Dynamic characteristics
QGD gate-drain charge VGS =10V; I
D=30A;
VDS = 120 V; Tj=25°C;
see Figure 13
- 2027nC
Sta tic chara cteristics
RDSon drain-source
on-state resistance VGS =10V; I
D=15A;
Tj=25°C;
see Figure 11 and 12
- 6063mΩ
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PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 2 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT78 (T O - 22 0 A B )
2D drain
3S source
mb D mounting base; connected to
drain
12
mb
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PHP30NQ15T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB SOT78
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PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 3 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 150 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤175 °C; RGS =20kΩ-150V
VGS gate-source voltage -20 20 V
IDdrain current VGS =10V; T
mb =25°C; see Figure 1 and 2-29A
VGS =10V; T
mb = 100 °C; see Figure 1 -20A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 2 -116A
Ptot total power dissipation Tmb =25°C; see Figure 3 -150W
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Source-drain diode
ISsource current Tmb =25°C - 29 A
ISM peak source current tp≤10 µs; pulsed; T mb =25°C - 116 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; T
j(init) =25°C; I
D=26A; V
sup ≤25 V ;
unclamped; RGS =50Ω; tp= 0.2 ms; see Figure 4 -502mJ
IAS non-repetitive
avalanche current Vsup ≤25 V; VGS =10V; T
j(init) =25°C;
RGS =50Ω; unclamped; see Figure 4 -29A
Fig 1. Normalized continuous drain current as a
function of mounting base temperature Fig 2. Safe operating area; continuous and peak drain
currents as a function of drain-s ou rce voltage
Tmb (°C)
0 20015050 100
03aa24
40
80
120
Ider
(%)
0
003aaa055
RDSon = VDS/ ID
D.C.
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V) 103
102
101
10
1
10−1
102
ID
(A)
103
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PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 4 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
5. Thermal characteristics
Fig 3. Normalized total power dissipation as a
function of mounting base temperature Fig 4. Non-repetitive avalanch e ruggedness current
as a function of pulse duration
Tmb (°C)
0 20015050 100
03aa16
40
80
120
Pder
(%)
0
003aaa054
10
2
10
1
10
−1
11010
−1
10
−2
10
−3
T
j
prior to avalanche = 150 °C
25 °C
t
p
(ms)
I
AS
(A)
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 5 --1K/W
Rth(j-a) thermal resistance from
junction to ambient vertical in still air - 60 - K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10
1
10−1
10−2
10−3
10−610−510−410−310−210−11
tp (s)
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.05
0.02
Single Pulse
tp
tp
T
P
t
T
δ =
003aaa056
0.1
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 5 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=250µA; V
GS =0V; T
j=25°C 150 - - V
VGS(th) gate-source threshold
voltage ID=1mA; V
DS = VGS; Tj=25°C;
see Figure 8 234V
ID=1mA; V
DS = VGS; Tj= 175 °C;
see Figure 8 1- - V
IDSS drain leakage current VDS =150V; V
GS =0V; T
j= 25 °C - 0.05 10 µA
VDS =150V; V
GS =0V; T
j= 175 °C - - 500 µA
IGSS gate leakage current VGS =10V; V
DS =0V; T
j= 25 °C - 0.02 100 nA
VGS =-10V; V
DS =0V; T
j= 25 °C - 0.02 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D=15A; T
j= 175 °C;
see Figure 11 an d 12 --176mΩ
VGS =10V; I
D=15A; T
j=25°C;
see Figure 11 an d 12 -6063mΩ
Dynamic characteristics
QG(tot) total gate charge ID=30A; V
DS =120V; V
GS =10V;
Tj=25°C; see Figure 13 -55-nC
QGS gate-source charge - 10 - nC
QGD gate-drain charge - 20 27 nC
Ciss input capacitance VDS =25V; V
GS = 0 V; f = 1 MHz;
Tj=25°C; see Figure 14 - 2390 - pF
Coss output capacitance - 240 - pF
Crss reverse transfer
capacitance -98-pF
td(on) turn-on delay time VDS =75V; R
L=2.7Ω; VGS =10V;
RG(ext) =5.6Ω; Tj=25°C -14-ns
trrise time - 50 - ns
td(off) turn-off delay time - 48 - ns
tffall time - 38 - ns
Source-drain diode
VSD source-drain voltage IS=25A; V
GS =0V; T
j=25°C;
see Figure 15 -0.91.2V
trr reverse recovery time IS=20A; dI
S/dt = -100 A/µs; VGS =0V;
VDS =25V; T
j=25°C - 105 - ns
Qrrecovered charge - 0.55 - µC
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 6 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 7. Transfer characteristics: drain current as a
function of gate-source vo ltage; typical values
Fig 8. Gate-source threshold voltage as a function of
junction temperature Fig 9. Sub-threshold drain current as a function of
gate-source voltage
003aaa057
ID
(A)
VDS (V)
35
30
25
20
15
10
5
00 0.4 0.8 1.2 1.6 2.0
VGS = 10 V 8 V
6 V
5.4 V
5.2 V
5.0 V
4.8 V
4.6 V
4.4 V
30
25
20
15
10
0
5
Tj = 175 °C
Tj = 25 °C
ID
(A)
VGS (V)
012345678910
003aaa062
2.5
−60 −20 20
1
0.5
0
1.5
2
60 100 140 180
3.5
VGS(th)
(V)
Tj (°C)
3
4
4.5
max
typ
min
003aaa023
003aaa024
12345
max
typ
min
ID
(A)
VGS (V)
10−7
10−6
10−5
10−4
10−3
10−2
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 7 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
Fig 10. Forward transconductance as a function o f
drain current; typical values Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature Fig 13. Gate-source voltage as a function of gate
charge; typical values
40
30
20
10
5
0
15
25
35
gfs
(S)
Tj = 25 °C
Tj = 175 °C
0 5 10 15 20 25 30
ID (A)
003aaa063
5.2 V
5.4 V
6.0 V
4.4 V
4.6 V
4.8 V
5.0 V
0
0.04
0.06
0.12
0.16
0.20
RDSon
(Ω)
0 5 10 15 20 25 30
ID (A)
003aaa061
VGS = 10 V
8.0 V
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0−40 40 80 120 160
a
Tj (°C)
003aaa064
VDD = 30 V
VDD = 120 V
0
2
4
6
8
10
12
14
VGS
(V)
0102030405060
QG (nC)
003aaa066
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 8 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Source current as a function of source-drain
voltage; typical values
104
103
102
10 11010
2
10−1
Ciss, Coss,
Crss
(pF)
VDS (V)
Ciss
Crss
Coss
003aaa065 30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1.0 1.2
IS
(A)
Tj = 175 °C
Tj = 25 °C
VSD (V)
003aaa067
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 9 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
7. Package outline
Fig 16. Package outline SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78 SC-46
3-lead TO-220AB
SOT7
8
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT A
mm 4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A1
DIMENSIONS (mm are the original dimensions)
P
lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0 5 10 mm
scale
b b1(2)
1.6
1.0
c D
1.3
1.0
b2(2) D1E e
2.54
L L1(1) L2(1)
max.
3.0
p q
3.0
2.7
Q
2.6
2.2
D
D1
q
p
L
123
L1(1)
b1(2)
(3×)
b2(2)
(2×)
ee
b(3×)
AE
A1
c
Q
L2(1)
mounting
base
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 10 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PHP30NQ15T_3 20100303 Product data sheet - PHB_PHP30NQ15T-02
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate .
•Typenumber PHP30NQ15T separated from data sheet PHB_PHP30NQ15T-02.
PHB_PHP30NQ15T-02
(9397 750 08037) 20010312 Product specification - PHB_PHP30NQ15T_1
PHB_PHP30NQ15T_1 19990801 Product specification - -
© Nexperia B.V. 2017. All rights reserved
PHP30NQ15T_3 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 03 — 3 March 2010 11 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document ma y have changed since this document w as published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specifica t io n — The information and dat a provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is be lieved to
be accurate and reliable. However, Nexperia does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third par ty
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the Nexperia product is
suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
testing for the Application in order to avoid a default of the Applicat ion and the
product. Nexperia does not accept any liability in this respect.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document conta i ns data from the objective specificat ion for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reserved
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Product data sheet Rev. 03 — 3 March 2010 12 of 13
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automo tive use. It i s neit her qualif ied nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without Nexperia’s warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product cl aims resulting f rom customer design an d
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
9.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Nexperia PHP30NQ15T
N-channel TrenchMOS st andard level FET
11. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10 Contact information. . . . . . . . . . . . . . . . . . . . . .12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
03 March 2010
