BAV100 thru BAV103 Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes Features MiniMELF (SOD-80C) Cathode Band .063 (1.6) Dia. .051 (1.3) .019 (0.48) .011 (0.28) .146 (3.7) .130 (3.3) Dimensions in inches and (millimeters) * Silicon Epitaxial Planar Diodes * For general purpose * These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to BAV21WS. Mechanical Data Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Cathode Band Color: Yellow Packaging Codes/Options: F4/10K per 13" reel (8mm tape), 50K/box Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Value Unit VR 50 100 150 200 V VRRM 60 120 200 250 V IF 250 mA Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25C and f 50Hz(1) IF(AV) 200 mA Repetitive Peak Forward Current at f 50Hz, = 180, Tamb = 25C(1) IFRM 625 mA Surge Forward Current at t < 1s, Tj = 25C IFSM 1 A Ptot 400 mW RJA 375 C/W Tj 175 C TS -65 to +175 C Continuous Reverse Voltage BAV100 BAV101 BAV102 BAV103 Repetitive Peak Reverse Voltage BAV100 BAV101 BAV102 BAV103 Forward DC Current at Tamb = 25C(1) (1) Power Dissipation at Tamb = 25C (1) Thermal Resistance Junction to Ambient Air Junction Temperature (1) Storage Temperature Range Note: (1) Valid provided that electrodes are kept at ambient temperature Document Number 88148 14-May-02 www.vishay.com 1 BAV100 thru BAV103 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit VF IF = 100mA IF = 200mA -- -- -- -- 1.00 1.25 V IR VR = 50V VR = 50V, Tj = 100C VR = 100V VR = 100V, Tj = 100C VR = 150V VR = 150V, Tj = 100C VR = 200V VR = 200V, Tj = 100C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100 15 100 15 100 15 100 15 nA A nA A nA A nA A rf IF = 10mA -- 5 -- Ctot VR = 0, f = 1MHz -- 1.5 -- pF trr IF = 30mA, IR = 30mA Irr = 3mA, RL = 100 -- -- 50 ns Forward Voltage Leakage Current BAV100 BAV100 BAV101 BAV101 BAV102 BAV102 BAV103 BAV103 Dynamic Forward Resistance Capacitance Reverse Recovery Time Ratings and Characteristic Curves (T www.vishay.com 2 A = 25C unless otherwise noted) Document Number 88148 14-May-02 BAV100 thru BAV103 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88148 14-May-02 www.vishay.com 3