Document Number: 88511 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Junction Fast Switching Rectifier
1N4942GP thru 1N4948GP
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 200 V to 1000 V
IFSM 25 A
trr 150 ns, 250 ns, 500 ns
IR1.0 μA
VF1.3 V
TJ max. 175 °C
DO-204AL (DO-41)
SUPERECTIFIER®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V
Maximum RMS voltage VRMS 140 280 420 560 700 V
Maximum DC blocking voltage VDC 200 400 600 800 1000 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 25 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88511
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4942GP thru 1N4948GP
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT
Maximum instantaneous
forward voltage 1.0 A VF1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
1.0
μA
TA = 150 °C 200
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 150 250 500 ns
Typical junction
capacitance 4.0 V, 1 MHz CJ15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT
Typical thermal resistance RJA (1) 55 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N4946GP-E3/54 0.336 54 5500 13" diameter paper tape and reel
1N4946GP-E3/73 0.336 73 3000 Ammo pack packaging
1N4946GPHE3/54 (1) 0.336 54 5500 13" diameter paper tape and reel
1N4946GPHE3/73 (1) 0.336 73 3000 Ammo pack packaging
Ambient Temperature (°C)
Average Forward Rectied Current (A)
25 50 75 100 125 150 175
0
0.25
0.50
0.75
1.00
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
Peak Forward Surge Current (A)
110 100
5
10
15
20
25
30
Number of Cycles at 60 Hz
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Document Number: 88511 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4942GP thru 1N4948GP
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
020 40 60 80 100
0.01
0.1
1
10
100
Instantaneous Reverse Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Reverse Voltage (V)
Junction Capacitance (pF)
110 100
1
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Typical Thermal Impedance (°C/W)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
• Lead diameter isfor sufx “E” part numbers
0.026 (0.66)
0.023 (0.58)
Note
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Revision: 12-Mar-12 1Document Number: 91000
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