MPSA14 / MMBTA14 / PZTA14
NDiscrete POWER & Signal
Technologies
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
MMBTA14MPSA14 PZTA14
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 10 V
ICCollector Current - Continuous 1.2 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Characteristic Max Units
MPSA14 *MMBTA14 **PZTA14
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
Thermal Characteristics TA = 25°C unless otherwise noted
CBETO-92
C
B
E
SOT-23
Mark: 1N
BC
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2.
MPSA14 / MMBTA14 / PZTA14
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, IB = 0 30 V
ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA
IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V 10,000
20,000
VCE(sat)Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
VBE(on)Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 10 V,
f = 100 MHz 125 MHz
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Pr05
0.001 0.01 0.1 1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
C
FE
25 °C
125 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
Pr05
110 100 1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
C
CESAT
25°C
- 40 ºC
125 ºC
ββ = 1000
Base-Emitter Saturation
Voltage vs Collector Current
Pr05
1 10 100 1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 ºC
125 ºC
ββ = 1000
Base Emitter ON Voltage vs
Collector Current
Pr05
110 100 1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
- 40 ºC
25 °C
125 ºC
MPSA14 / MMBTA14 / PZTA14
Typical Characteristics (continued)
NPN Darlington Transistor
(continued)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Pr05
0.1 1 10 100 1000
59.5
60
60.5
61
61.5
62
62.5
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
ΩΩ
CER
Collector-Cutoff Current
vs Ambient Temperature
Pr05
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
º
V = 30V
CB
Input and Output Capacitance
vs Reverse Voltage
Pr05
0.1 1 10 100
2
5
10
20
V - COLLECTOR VOLTAGE(V)
CAPACITANCE (pF)
ce
Cib
Cob
f = 1.0 MHz
Gain Bandwidth Product
vs Collector Current
1 10 20 50 100 150
0
10
20
30
40
50
I - COLLECTOR CURRENT (mA)
T
V = 5V
ce
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23