Numerical Index 2N489~2N549 | MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS sj ey = = | =| REPLACE. | PAGE Po {BS} Ts | Ves | Vee | hee @ le Vegsan @ le 2) ft je Wee JE /S| ment | wumeer| USE = S| Fe alm 1B] "s/8 =\a @ 25C |B} C | Wolts) | (volts) |S | (min) (max) >} (volts) 5 3 5/3 2N489 were Unijunction Transistors, see Table on Page 1-174 N4 94, 2N495 S]P RFA 150M [A 140) 25 25 U 15 8.0M |M 2N496 s|P Mss | 150M]A | 140] lo 1o Ju} 15 15M] 0.15] 5.0M 49.0 |E | 7.2MI/T 2N497 S| N | 2N3498 8-232 | AFA 4.0W 1C 200} 60 60 0 12 36 200M 2N497A |S |N AFA | 5.0w]c | 200] 60 60 |O | 127 36] 200M 2N498 SN | 2N3498 8-232 | AFA 4.0W | C 200] 100 100 0 12 36 200M 2N498A SIN AFA 5.0W |C 200] 100 100 0 12 36 200M 2N499 G{ P | 2N3328 9-71 RFA 30M [A 85] 30 18 0 120M |T 2N499A |G | PB | 2N3323 9-71 | RFA 60M |A | 100) 30 1g |0 20 |e | 120M |T 2N500 G | P | 2N3323 9-71 | RFA 50M |a 85{| 20 15 2N501 c | Pp | 2N960 8-74 | HSS 60M JA | 100] 15 12 1s | 20 10M 0.2 10M 90M |T 2N501A G | P | 2N960 8-74 HSS 60M |A 100} 15 12 Ss 30 LOM 0.2 10M 90M |T 2N502 G | P | 2N3283 9-51 RFA 60M |A 85} 20 20 S 9.0 JE 220M |T 2N502A |G | P | 2N3284 9-51 | RFA 75M JA | 100} 30 30 |s 15 JE | 220M 1T 2N502B GIP RFC 75M [A 100] 30 30 s 20 |E 2N503 G]P | 23284 9-51 | RFA 25M |A 85] 20 20 |s 9.0 |E | 168M |T 2N504 G | P | 2N3323 9-71 | RFA 30M JA 85] 35 25 1s | 20 | 200 10M 16 |E 50M |M 2N506 G|P AFA 50M JA 85] 40 25 | 50 50M 0.6 50M 600K |B 2N507 GIN AFA 50M |A 85) 40 25 50 50M 0.6 50M 600K |B 2N508 G/P 6-7 AFC 200M [A 100] 18 18 R 99 1198 20M 2.5M |B 2N508A G|P | 2N1189 6-28 AFA O.2wW fA Loo] 30 30 S |100 | 200 20M 75 [E 2.5M |B 2N509 GIP RFA 225M JA Loo} 390 0.96 |B 400M |T 2N511 G]P |2N1554 7-67 LPA L50W |C 40 20! 60 LOA 0.5 LOA 260K |T 2N511A G |P {2N1555 7-67 LPA 150W JC 60 20; 60 10A 0.5 LOA 260K |T 2N511B |G |P |2N1556 7-67. | PMS | 150W |c 80 20| 60 10A 0.5 10A 260K |T 2N512 G |P {2nN1558 7-67 | LPA | 150W |c 40 20] 60 15A | 0.75 15A 260K |T 2N512A |G | P |2N1559 7-67 | LPA | 150w {c 60 20] 60 15A | 0.75 15A 260K {T 2N512B G |P {2N1560 7-67 PMS 150w [Cc 80 20] 60 15A 0.5 LOA 260K |T 2N513 G|P }2N1163 7-53 LPA 150wW [Cc 40 20; 60 20A 1.25 20A 300K |T 2N513A G |P |2N1165 7-53 LPA 150w |Cc 60 20} 60 20A 1.25 20A 260K |T 2N513B G |P |2N1167 7-53 PMS 150wW |c 80 20| 60 20A 0.5 10A 260K |T 2N514 G {P |2N1163 7-53 PMS 80W |C 95] 40 40 |X 1.25 25A 2N514A G|P |2N1165 7-53 PMS 80W |C 95| 60 60 |X 1.25 25A 2N514B GIP | 21167 7-53 PMS, 80w [Cc 95) 80 80 1X 1.25 254, 2N515 GIN RFC 50M JA 75| 20 18 JR 4,0 |E 2.0M |B 2N516 GIN RFC 50M jA 75| 20 18 JR 4.0 {E 2.0M [B 2N517 GIN REC 50M jA 75| 20 18 |R 4.0 {E 2.0M |B 2N518 G |P MSS |0.15W |A 857 45 12 10 60 10M 0.15 10M 10M |B 2N519 G |P MSA LOOM |A 85; 15 15 }0 15 |E O.5M 1B 2N519A G |P MSA 150M |A 100} 25 18 }0 20] 50 20M 15 |& O.5M [B 2N520 GIP MSA 100M |A 85] 15 12 |0 20 |E 3.0M /B 2N520A G |P MSA 150M |A 100) 25 15 JO 40/170 20M 40 |E 2.0M |B 2N521 6G |P MSA | LOOM |A 85] 15 10 Jo 35 |E | 8.0M [|B 2N521A G [P MSA 150M |A 100) 25 12 Jo 60/250 20M 70 |E 8.0M |B 2N522 G |P MSA 1OOM |A 85] 15 8.0 10 60 [E 15M [B 2N522A G |P MSA 150M_]A 100] 25 10 {0 804320 20M 100 |E 15M |B 2N523 GIP MSA LOOM fA 85) 15 6.0 10 80 |E 21M |B 2N523A G|P MSA 150M IA 100] 20 6.0 10 100}400 20M 125 |E 21M |B 2N524 GP 6-17 AFA 225M JA 100) 45 30 JR 25] 42 20M 0.13 20M 16 |E 800K |B 2N524A |G |P 6-17 |AFA | 225M JA { 100] 45 30 |R 25] 42 20M | 0.13 20M 18 |E | 0.8m |B 2N525 G |P 6-17 AFA 225M |A 100} 45 30 JR 34] 65 20M 0.13 20M 30 |E 1.0M 1B 2N525A G |P 6-17 AFA 225M |A 100} 45 30 IR 34] 65 20M 0.13 20M 30 |E 1.0M |B 2N526 G |P 6-17 AFA 225M |A 100) 45 30 [R 53] 90 20M 0.13 20M 44 |E 1.3M |B 2N526A |G |P 6-17 {AFA | 225M |A | 100] 45 30 IR 53] 90 2om | 0.13 20M 44 |B | 1.3M |B 2N527 G IP 6-17 AFA 225M JA 100) 45 30 JR 724121 20M 0.13 20M 60 |E 1,5M 1B 2N527A G {P AFA 225M JA 100] 45 30 IR 724121 20M 0.13 20M 60 |E 1.5M |B 2N528 G |P 2.5W [Cc 100] 40 40 20 0.54 2N529 G 100M jA 85/ 15 15 fo 2N530 G 100M |A 85] 15 15 |O0 2N531 G 100M |A 85] 15 15 |O 2N532 G LOOM |A 85) 15 15 Jo 2N533 G loom |A 85] 15 15 {0 2N534 G }P {2N21189 6-28 | AFA 25M A 65} 50 50 |u 35 |E 2N535 |P |2ni192 6-30 | LNA 50M jA 85| 20 20 fu 35 |E 2N535A |G |P |2N1192 6-30 | LNA 50M |A 85| 20 20 |u 35 |E 2N535B [CG {P 6-30 | LNA 50M [A 85] 20 20 |u 35 [E 2N536 G |P {2N1193 6-30 MSS 50M |A 85] 20 20 |uU 100 30M 0.13 10M 1.0M |B 2N537 Gc |P 6-30 | RFA 100] 30 4.0 70M | 0.9 |B 2N538 c |P [22140 7-78 | PMs 34aw |J 951 80 60 20| 50 | 2.0A | 0.6 2.0A 2N538A G {P |2N2140 7-78 PMS 34W {J 95| 80 60 20] 50 2.0A 0.6 2.0A 2N539 G [P ]2N2145 7-78 | PMS 34w | 95} 80 55 30, 75 | 2.0a | 0.6 2.0A 2N539A |G |P |2N2145 7-78 | PMS llw [J 95] 80 55 30} 75 | 2,0A | 0.6 2.0A 2N540 G]P /2N1551 7-67 PMS 34W [J 95| 80 55 45)113 2.04 0.6 2.0A 2N540A G |P |/2N1551 7-67 PMS 34W {J 95) 80 55 45]113 2,0A 0.6 2.0A 2N541 8 |N VIp | 0.2w |A | 200] 15 15 ju 1.5 5.0M 80 |E 1oM |T 2N541A S IN AFA O.2W |A 200) 15 15 |0 20 1.0 5.0M 80 jE 8.0M |T 2N542 Ss |N VID O.2W [A 200) 30 30 JU 1.5 5.0M 80 [E 10M |T 2N542A SN AFA O.2W |A 200; 30 30 10 20 1.0 5.0M 80 |E 10M |T 2N543 s |N VID | 0.2w JA | 200} 50 50 |u 1.5 5.0M 80 |E 10M |T 2N543A |S |N AFA | 0.2W [a | 200] 45 45 |0 20 1.0 5.0M 80 |E lom |T 2N544 c |p RFC som |A 71\ 34 2N545 s |N RFA 5w Ic | 200] 60 60 {0 15] 80 | 0.5A | 5.0 0.5A 2N546 s |N RFA 5w |c | 200] 30 30 {0 15| 80 | 0.54 | 3.0 0.54 2N547 S |N |2N3766 7-142 | RFA 5w |c | 200{ 60 60 10 20] 80 | 0.5A | 5.0 0.5A 4.0M IT 2N548 s |[N |2N4898 7-172 | RFA 5w ic | 200} 30 30 |0 20| 80 | 0.5A | 3.0 0.5A 4.0M |T 2N549 Ss {N RFA 5w lc | 200] 60 60 |0 20{ 80 | 0.2A | 4.0 0.24 4.0M {T 1-107Germanium Milliwatt Transistors - GERMANIUM MILLIWATT TRANSISTORS This line of low-frequency, low-power transistors consists of a wide selection of highly reliable germanium PNP devices designed for general] purpose switching, amplifier, and control applications. The line is generally characterized by devices having a power rating to 225 mW, a maximum operating temperature range from -65C to +100C, anda typical cutoff frequency (Eo) to 8 MHz. QUICK SELECTION GUIDE FOR AMPLIFIER / OSCILLATOR AND SWITCHING APPLICATIONS TO 20 KILOCYCLES The following transistors merit first consideration within the specified gain- voltage groups. All of the specified devices have collector power dissipation ratings (P,) of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 225 | 100; | 18 500 | 72 198 1 | 20 | 2.0 2N331 200 | 100| 30|Vgp=iz| 200 | 30 70 6 1 }1.5 |JAN 2N331 2N381 225 | 100| 50| 25 400 | 35 65 1 | 20 |3 2N382 225 | 100] 50| 25 400 | 60 95 1 | 20 |4 2N383 225 | 100] 50] 25 400 | 75 {120 1 | 20 |5 2N398 50 | 85 | 105 | Vp=105 | 100 | 20 .35 | 5 |1.0 [USN 2N398 2n308a | 150 | 100 | 105 | Vyz=105 | 200 | 20 35 1 5 | 1. 2N460 225 | 100| 45| $5 400 | 31 |200 6 1Q@)\ 4 2N461 225 | 100] 45] 35 400 | 0.94 , [0.972 | 6 179) 1.2 USAF 2N461 2N464 200 | 100] 45] 40 100 | 14 _ 6 1 | 1.0 2N465 200 | 100} 45} 30 100 | 27 _ 6 1 |15 \uSA 2N465 2N466 200 | 100 | 35| 20 100 | 56 _ 6 1 [2.0 [JAN 2N466 2N467 200 | 100| 35| 15 100 | 112 _ 6 1 12.5 |USA 2N467 2N508 225 | 100| | 18 500 | 99 ~=*/198 1 | 20 | 2.5 g 2N524 225 | 100} | 30 500 | 25 42 1 | 20 | 0.86) [2N524a 2N525 225 | 100| | 30 500 | 34 65 1 | 20 | 1.06) |2N595A 2N526 225 | 100; | 30 500 | 53 90 1 | 2 1130 NA 2N527 225 | 100; | 30 500 | 72 {121 1 | 20 | 1.5@ |2N597A 8 2N650 200 | 100] 45] 30 500 | 30 70 6 1 11.5 |2N650A USN 2N650A 2N651 200 | 100] 45 | 30 500 | 50 {120 6 1 [2.0 |2ane51A @ USN 2N651A 2N652 200 | 100 | 45| 30 500 | 100 =: {225 6 1 |2.5 lones2a USN 2N652A 2N653 200 | 100] 301 25 250 | 30 70 6 1 11.5 2N654 200 | 100| 30] 25 250 | 50 |125 6 1 | 2.0 2N655 200 | 100 | 30| 25 250 | 100 |250 6 1 | 2.5 2N1008 | 200 | 100] 20] 20 300 | 40 hge | 150 5 | 10 | 2n1008A | 200 | 100} 40/ 40@ | 300 | 40 hfe |150 5 | 10 2n1008B | 200 | 100] 60! 60@ | 300 | 40 hg | 150 5 10 | 2n1175 | 225 | 100| | 25 500 | 70 |140 1 | 20 }156 2N1185 | 200 | 100] 45] 30 500 | 190 |400 6 1 |3.0 2n1186 | 200 | 100| 60] 45 500 | 30 70 6 1/15 2N1187 | 200 | 100| 60| 45 500 | 50 |120 6 1 | 2.0 2n1188 | 200 | 100| 60| 45 500 | 100 [225 6 1 [2.5 2Niis9 | 200 | 100 | 45 | 30 500 | 60 _ 1 | 10@ 3.5 2N1190 | 200 | 100| 45| 30 500 | 100 1 1003) 4.5 2N1191 | 200 | 100| 40] 25 200 | 30 70 6 1 115 2n1192 | 200 | 100| 40] 25 200 | 50 125 6 1 | 2.0 6-4Germanium Milliwatt Transistors 2n508 FOR SPECIFICATIONS, SEE 2N322 DATA SHEET Vex =45V hee - to 72-121 (min-max) fa, - to 7.0 MHz (max) 2n524 thru an527 2N524A thru 2N527A, Hi-Rel 2N526 JAN PNP germanium transistor for switching and ampli- fier applications in the audio-frequency range. Avail- able for military and high-reliability industrial purposes. CASE 31 (TO-5) Base connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Voz 45 Vdc Collector-Emitter Voltage Vcro 30 Vdc Emitter -Base Voltage Ves 15 Vdc Collector Current Io 500 mAdc Storage and Operating Temperature ste T. -65 to +100 C Collector Dissipation in Free Air Ph 225 mW @ 25C Ambient Thermal Resistance rn 0. 333 C/mW (Junction to Air) Thermal Resistance %IC 0.15 C/mW (infinite heat sink) 6-17 Switching and General Purpose Transistors MM2094 (siticon) Vero =12V Ic = 100 mA hre = 70 Typ torr = 60 ns PNP silicon annular transistors for low-level, high- speed switching applications. CASE 22 (TO-18) MAXIMUM RATINGS Collector connected to case Rating Symbol Value Unit Collector-Base Voltage Vop 15 Vde Collector -Emitter Voltage Vero 12 Vde Emitter-Base Voltage Ves 4.5 Vdc Total Device Dissipation Py @ 25C Ambient Temperature 0.36 Watt Derate above 25C 2.06 mw/*C Total Device Dissipation Ph @ 25C Case Temperature 1.2 Watts Derate above 25C 6.9 mW/?C Operating Junction Temperature Ty 200 Cc Storage Temperature Tote -65 to 200 C SWITCHING TIME TEST CIRCUIT -2V in 1002 Pulse Source Rise Time < Ins P.W. > 200ns Z.. = 502 in T on Toft 622 Vv out To Sampling Scope Rise Time < Ins Input Z = 1001k = +3V Vv bb ; vob 8-328Germanium Milliwatt Transistors 2N524 THRU 2N527 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristics Symbol Min Max Unit Collector Cutoff Current logo - 10 uAde Vop = 30 Vdc, I, = 0) Emitter Cutoff Current I BO - 10 uAdc Ven = 15 Vde, I = 0) Collector-Emitter Breakdown Voltage BV 30 - uvVdc _ ~ All Types CER I = 0.6 mAdc, Ror = 10K) Coliector-Emitter Reach Through Var 30 - uVdc (Punch-Thru) Voltage Vp = 1 Vde, VIVM Z > 1 Megohm) Static Forward-Current Transfer Ratio bee Vor = 1 Vdc, lo = 20 mAdc) 2N524 25 42 - 2N525 34 65 - 2N526 53 90 - 2N527 712 121 - Small-Signal Short-Circuit Forward top Current Transfer Ratio Frequency Cutoff Vop = 5 Vdc, I, = 1 mAdc) 2N524 0.8 5.0 MHz 2N525 1,0 5.5 2N526 1.3 6.5 2N527 1.5 7.0 Output Capacitance Co Voz = Vde, Ih = 1 mAdc, f = 1 MHz) All Types 5 40 pF Small-Signal Open Circuit Output Admittance hop Voz = 5 Vde, I, = 1 mAdc, f = 1 kHz) 2N524 0.10 1.3 umho 2N525 0, 10 1.2 2N526 0. 10 1.0 2N527 0. 10 0.9 Small-Signal Open Circuit Reverse Transfer hip Voltage Ratio 4 Vop = 5 Vdc, Ih = 1 mAdc, f= 1 kHz) 2N524 1,0 10 X10 2N525 1.0 il 2N526 1.0 12 2N527 1.0 14 Smalli-Signal Short Circuit Input Impedance hin (op = 5 Vde, I, = 1 mAde, f = 1 kHz) 2N524 26 36 ohms 2N525 26 35 2N526 26 33 2N527 26 31 Collector-Emitter Saturation Voltage Vor (sat) a, = 2 mAdc, I, = 20 mAdc) 2N524 a, = 1.33 mAdc, Io = 20 mAdc) 2N525 - 130 mVdc G, = 1,0 mAdc, I, = 20 mAdc) 2N526 - 130 (I, = 0.67 mAdc, I, = 20 mAdc) 2N527 - 130 - 130 Base Input Voltage Var Vor =1 Vdc, Io = 20 mAdc) 2N524 220 320 mVdc 2N525 200 300 2N526 190 280 2N527 180 260 6-18Germanium Milliwatt Transistors 2N524 thru 2N527 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristics Symbol Min Max Unit Noise Figure NF - 15 aB Voz = 5 Vdc, lL = 1 mAdc, f= 1kHz,BW = 1 Hz All Types Small-Signal Short-Circuit h fe Forward-Current Transfer Ratio Wop = 5 Vde, I, = 1 mAdc, f= 1 kHz) 2N524 18 41 - 2N525 30 64 2N526 44 88 2N527 60 120 POWER-TEMPERATURE DERATING CURVE COLLECTOR CUTOFF CURRENT versus TEMPERATURE __ 250 1000 = 225 = 200 Ss 5 : b 100 Vor = ~10 ge 150 2 1. & 3 100 g 2 F 5 10 ao z oa 50 = a & gz al a 0 z= 0 25 50 75 100 s 0.01 Ta, AMBIENT TEMPERATURE (C) = 0.001 The maximum continuous power is related to maximum junction tem- perature by the thermal resistance factor. 0.0001 Thi: hi vi 2 i: 0 mW at 100C with a linear relation between the twortemperatares such thats 60-40 20 0 +20 +40 +60 +80 +100 100 T. allowable Py = TEMPERATURE (C) he, VARIATION WITH TIME "co VARIATION WITH TIME =20mA Vea = 30 volts fire (NORMALIZED TO tNITIAL VALUE) Jogo (NORMALIZED TO INITIAL VALUE) 0 1000 2000 0 1000 2000 TIME (HOURS) TIME (HOURS) COMMON EMITTER INPUT VOLTAGE versus COLLECTOR CURRENT D-C BASE CURRENT GAIN versus COLLECTOR CURRENT Von =1V Ty = 25C Vor =~ 1V T, = 25C 2N524(A) 2N525(A) 2N526(A) 2N527(A) 2N524(A) Vu, BASE-EMITTER VOLTAGE (VOLTS) hex, DC BASE CURRENT TRANSFER RATIO 0 20 40 60 80 100 120 140 160 180 200 0 20 40=(60 80 100 120 140 160 180 200 |p, COLLECTOR CURRENT (MILLIAMPERES) Io: COLLECTOR CURRENT (MILLIAMPERES) 6-19