DMA150E1600NA Standard Rectifier VRRM = 1600 V I FAV = 150 A VF = 1.05 V Single Diode Part number DMA150E1600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130117a DMA150E1600NA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25C 200 A VR = 1600 V TVJ = 150C 3.5 mA I F = 150 A TVJ = 25C I F = 300 A TVJ = 125 C I F = 150 A I F = 300 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current TC = 110C rectangular It CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V V 1.05 V 1.33 V T VJ = 150 C 150 A TVJ = 150 C 0.78 V d = 0.5 for power loss calculation only value for fusing 1.15 1.36 1.8 m 0.2 K/W K/W 0.10 TC = 25C 620 W t = 10 ms; (50 Hz), sine TVJ = 45C 3.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.24 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 2.55 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.76 kA t = 10 ms; (50 Hz), sine TVJ = 45C 45.0 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 43.7 kAs TVJ = 150 C 32.5 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 31.6 kAs 60 pF 20130117a DMA150E1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C 1) Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL abcde YYWW Z 1.1 1.5 Nm Nm 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL 1 mA Part number Product Marking Logo 1.5 10.5 t = 1 second t = 1 minute 1.1 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g D M A 150 E 1600 NA Part No. XXXXXX = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] SOT-227B (minibloc) Assembly Code DateCode Assembly Line Ordering Standard Part Number DMA150E1600NA Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 10 Code No. 508942 T VJ = 150C Rectifier V 0 max threshold voltage 0.78 R 0 max slope resistance * 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product DMA150E1600NA V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130117a DMA150E1600NA Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130117a DMA150E1600NA Rectifier 300 2500 250 2250 200 105 50 Hz, 80%VRRM VR = 0 V 2000 TVJ = 150C TVJ = 125C TVJ = 25C IF 150 IFSM 2 1750 [A] [A] 2 [A s] 100 1500 50 1250 0 0.5 It TVJ = 45C 1.0 TVJ = 150C TVJ = 150C 104 1000 0.001 1.5 VF [V] Fig. 1 Forward current versus voltage drop per diode TVJ = 45C 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 350 200 RthHA = 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 160 P120 tot DC = 1 0.5 0.4 0.33 0.17 0.08 300 250 200 IF(AV)M 150 [W]80 [A] 100 40 50 0 0 0 20 40 60 80 100 120 140 160 0 25 50 IF(AV)M [A] 75 100 125 150 175 0 25 50 75 100 125 150 175 [C] Tamb [C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.20 0.16 Constants for ZthJC calculation: ZthJC i 0.12 [K/W] 0.08 0.04 Rthi (K/W) ti (s) 1 0.017 0.01 2 0.013 0.00001 3 0.010 0.01 4 0.04 0.04 5 0.12 0.3 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130117a