TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 68400 44, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
SURFACE MOUNT 600 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (VWM)
DEVICES MSMBJ5.0A thru MSMBJ170CA, e3
and MSMBG5.0A thru MSMBG170CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL. These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to
MP6KE200CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o Class 1: MSMB5.0A to MSMB120CA
o Class 2: MSMB5.0A to MSMB60CA
o Class 3: MSMB5.0A to MSMB30CA
o Class 4: MSMB5.0A to MSMB15CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o Class 1: MSMB5.0A to MSMB36CA
o Class 2: MSMB5.0A to MSMB18CA
MAXIMUM RAT ING S
Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000 μs (also see Figures 1, 2, and
3) with impulse repetition rate (duty factor) of 0.01 % or less
t
clamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 °C to +150 °C
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)
Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when
mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260 ºC for 10 s (maximum)
Refer to table below
for dime nsions
RF01000 Rev B, Sept 2011 High Reliability Product Group Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 68400 44, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Gull-wing or J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating
solderable per MIL-STD-750, method 2026
Cathode indicated by band (No cathode band on bi-directional devices)
Part number marked on package
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL option available with up to 750 devices on 7 inch reel or up to 2500 devices on 13 inch reel per
EIA-481-1-A with 12 mm tape. Add “TR” suffix to part number.
Weight: 0.1 gram (approximately)
PACKAGE DIMENSIO NS
DIMENSIONS IN INCHES
A B C D E F K L
MIN .077 .160 .130 .205 .077 .235 .015 .030
MAX .083 .180 .155 .220 .104 .255 .030 .060
DIMENSIONS IN MILLIMETERS
MIN 1.95 4.06 3.30 5.21 1.95 5.97 .381 .760
MAX 2.10 4.57 3.94 5.59 2.65 6.48 .762 1.520
SMBJ SMBG
(DO-214AA) (DO-215AA)
PAD LAYOUT
SMBJ (DO-214AA)
INCHES mm
A .260 6.60
B .085 2.16
C .110 2.79
SMBG (DO-215AA)
INCHES mm
A .320 8.13
B .085 2.16
C .110 2.79
SYMBOLS & DEFINITIONS
Symbol
Definition
Symbol
Definition
V
WM
Working Peak (Standoff) Voltage I
PP
Peak Pulse Current
P
PP
Peak Pulse Power
V
C
Clamping Voltage
V
BR
Breakdown Voltage I
BR
Breakdown Current for V
BR
I
D
Standby Current
RF01000 Rev B, Sept 2011 High Reliab ility Product Group Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 68400 44, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI PART NUMBER
REVERSE
STAND-OFF
VOLTAGE
VWM
BREAKDOWN VOLTAGE
VBR @ IBR
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
(see Fig. 2)
IPP
MAXIMUM
STANDBY
CURRENT
ID @ VWM
GULL-WING J-BEND V V mA V A µA
MSMBG5.0A MSMBJ5.0A 5 6.40 – 7.00 10 9.2 65.2 800
MSMBG6.0A MSMBJ6.0A 6 6.67 – 7.37 10 10.3 58.3 800
MSMBG6.5A MSMBJ6.5A 6.5 7.22 – 7.98 10 11.2 53.6 500
MSMBG7.0A MSMBJ7.0A 7 7.78 – 8.60 10 12 50 200
MSMBG7.5A MSMBJ7.5A 7.5 8.33 – 9.21 1 12.9 46.5 100
MSMBG8.0A MSMBJ8.0A 8 8.89 – 9.83 1 13.6 44.1 50
MSMBG8.5A MSMBJ8.5A 8.5 9.44 – 10.4 1 14.4 41.7 10
MSMBG9.0A MSMBJ9.0A 9 10.0 – 11.1 1 15.4 39 5
MSMBG10A MSMBJ10A 10 11.1 – 12.3 1 17 35.3 5
MSMBG11A MSMBJ11A 11 12.2 – 13.5 1 18.2 33 5
MSMBG12A MSMBJ12A 12 13.3 – 14.7 1 19.9 30.2 5
MSMBG13A MSMBJ13A 13 14.4 – 15.9 1 21.5 27.9 1
MSMBG14A MSMBJ14A 14 15.6 – 17.2 1 23.2 25.8 1
MSMBG15A MSMBJ15A 15 16.7 – 18.5 1 24.4 24 1
MSMBG16A MSMBJ16A 16 17.8 – 19.7 1 26 23.1 1
MSMBG17A MSMBJ17A 17 18.9 – 20.9 1 27.6 21.7 1
MSMBG18A MSMBJ18A 18 20.0 – 22.1 1 29.2 20.5 1
MSMBG20A MSMBJ20A 20 22.2 – 24.5 1 32.4 18.5 1
MSMBG22A MSMBJ22A 22 24.4 – 26.9 1 35.5 16.9 1
MSMBG24A MSMBJ24A 24 26.7 – 29.5 1 38.9 15.4 1
MSMBG26A MSMBJ26A 26 28.9 – 31.9 1 42.1 14.2 1
MSMBG28A MSMBJ28A 28 31.1 – 34.4 1 45.4 13.2 1
MSMBG30A MSMBJ30A 30 33.3 – 36.8 1 48.4 12.4 1
MSMBG33A MSMBJ33A 33 36.7 – 40.6 1 53.3 11.3 1
MSMBG36A MSMBJ36A 36 40.0 – 44.2 1 58.1 10.3 1
MSMBG40A MSMBJ40A 40 44.4 – 49.1 1 64.5 9.3 1
MSMBG43A MSMBJ43A 43 47.8 – 52.8 1 69.4 8.6 1
MSMBG45A MSMBJ45A 45 50.0 – 55.3 1 72.7 8.3 1
MSMBG48A MSMBJ48A 48 53.3 – 58.9 1 77.4 7.7 1
MSMBG51A MSMBJ51A 51 56.7 – 62.7 1 82.4 7.3 1
MSMBG54A MSMBJ54A 54 60.0 – 66.3 1 87.1 6.9 1
MSMBG58A MSMBJ58A 58 64.4 – 71.2 1 93.6 6.4 1
MSMBG60A MSMBJ60A 60 66.7 – 73.7 1 96.8 6.2 1
MSMBG64A MSMBJ64A 64 71.1 – 78.6 1 103 5.8 1
MSMBG70A MSMBJ70A 70 77.8 – 86.0 1 113 5.3 1
MSMBG75A MSMBJ75A 75 83.3 – 92.1 1 121 4.9 1
MSMBG78A MSMBJ78A 78 86.7 – 95.8 1 126 4.7 1
MSMBG85A MSMBJ85A 85 94.4 – 104 1 137 4.4 1
MSMBG90A MSMBJ90A 90 100 – 111 1 146 4.1 1
MSMBG100A MSMBJ100A 100 111 – 123 1 162 3.7 1
MSMBG110A MSMBJ110A 110 122 – 135 1 177 3.4 1
MSMBG120A MSMBJ120A 120 133 – 147 1 193 3.1 1
MSMBG130A MSMBJ130A 130 144 – 159 1 209 2.9 1
MSMBG150A MSMBJ150A 150 167 – 185 1 243 2.5 1
MSMBG160A MSMBJ160A 160 178 – 197 1 259 2.3 1
MSMBG170A MSMBJ170A 170 189 – 209 1 275 2.2 1
NOTE 1: For Bidirectional device types indicate CA suffix after the part number. (i.e. MSMBJ170CA). Bidirectional capacitance
is half that shown in figure 4 at zero volts.
NOTE 2: Microsemi Corp’s MSMB series (600 W) surface mountable packages are designed specifically for transient voltage
suppression. The wide leads assure a large surface contact for good heat dissipation, and a low resistance path for
surge current flow to ground. These high speed transient voltage suppressors can be used to effectively protect
sensitive components such as integrated circuits and MOS devices
RF01000 Rev B, Sept 2011 High Reliability Product Group Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland. 6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 68400 44, Fax: +353 (0) 65 6822298 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
_______ __
RF01000 Rev B, Sept 2011 High Reliab ility Product Group Page 4 of 4
___________________________________________________________________________
_______________________________________________
GRAPHS
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 10,000
P
PP
– Peak Pulse Power – kW
20
30
50
10
0.2
2.0
1.0
0.5
0.3
0.1
T
C
= 25 °C
tw – Pulse Width - μs
FIGURE 1
Peak Pulse Power vs. Pulse Time
Test waveform parameters: tr=10
μ
s, tw=1000
μ
s
FIGURE 2 Pulse Waveform for Ex
p
onential Sur
g
e
Peak Pulse Power (
P
PP
) or continuous
Power in Percent of 25°C Rating
C – Capacitance - Picofarads
T
L
Lead Temperature °C
FIGURE 3 Derating Curve
V
BR
Breakdown Voltage – Volts
FIGURE 4 Typical Capacitance vs Breakdown Voltage
