Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Min. TYP. Max. Unit
DC Current Gain(1)
at VCE = 10V, IC = 100µAh
FE
80–––
at VCE = 1V, IC = 10mA hFE
18 0–––
at VCE = 1V, IC = 100mA hFE 250 630 –
at VCE = 2V, IC = 500mA hFE
Collector-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VCEsat – – 0.3 V
at IC = 500mA, IB = 50mA VCEsat – – 0.7 V
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VBEsat – – 1.25 V
at IC = 500mA, IB = 50mA VBEsat ––2V
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0 V(BR)CEO 45 – – V
Collector-Base Breakdown Voltage
at IC = 10µA, IB = 0 V(BR)CBO 75 – – V
Emitter-Base Breakdown Voltage
at IE = 10µA, IC = 0 V(BR)EBO 5––V
Collector-Base Cut-off Current
at VCB = 45V, IE = 0 ICBO – – 20 nA
at VCB = 45V, IE = 0, TA= 150°C ICBO ––20µA
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0 IEBO – – 20 nA
Gain-Bandwidth Product
at VCE
= 10V, IC
= 20mA, f = 100MHz fT
– 100 – MHZ
Collector-Base Capacitance
at VCB = 1 0V, f = 1MHz CCB –6–pF
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz CEB –60–pF
Note: (1) Pulse test: t ≤300µs, D = 2%